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Patent # Description
2016/0293440 ETCHING METHOD
Provided is an etching method for simultaneously etching first and second regions of a workpiece. The first region has a multilayered film configured by...
2016/0293439 ETCHING METHOD
A method of concurrently etching a first region in which silicon oxide films and silicon nitride films are alternately stacked and a second region including...
2016/0293438 CYCLIC SPACER ETCHING PROCESS WITH IMPROVED PROFILE CONTROL
Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes,...
2016/0293437 CYCLIC SPACER ETCHING PROCESS WITH IMPROVED PROFILE CONTROL
Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes,...
2016/0293436 POLISHING COMPOSITION
Provided is a polishing composition which exhibits favorable storage stability and polishes a polishing object poor in chemical reactivity at a high speed. ...
2016/0293435 PARTIAL ETCH MEMORIZATION VIA FLASH ADDITION
Provided is a method of creating structure profiles on a substrate using faceting and passivation layers. A first plasma etch process performed generating a...
2016/0293434 Polishing of Small Composite Semiconductor Materials
A device includes a crystalline material within an area confined by an insulator. A surface of the crystalline material has a reduced roughness. One example...
2016/0293433 Methods of Fabricating Features Associated With Semiconductor Substrates
Some embodiments include a method of fabricating features associated with a semiconductor substrate. A first region of the semiconductor substrate is altered...
2016/0293432 METHOD FOR ATOMIC LAYER ETCHING
A method of etching a layer on a substrate includes disposing a substrate in a plasma processing system configured to facilitate an etching process, performing...
2016/0293431 GAS REACTION TRAJECTORY CONTROL THROUGH TUNABLE PLASMA DISSOCIATION FOR WAFER BY-PRODUCT DISTRIBUTION AND ETCH...
Methods, systems, and computer programs are presented for controlling gas flow in a semiconductor manufacturing chamber. The method includes flowing a reactant...
2016/0293430 SULFUR AND FLUORINE CONTAINING ETCH CHEMISTRY FOR IMPROVEMENT OF DISTORTION AND BOW CONTROL FOR HAR ETCH
In accordance with this disclosure, there is provided several inventions, including a method for etching a plurality of features in a stack comprising...
2016/0293429 Free-Edge Semiconductor Chip Bending
Techniques for fabricating a semiconductor chip having a curved surface may include placing a substantially flat semiconductor chip in a recess surface of a...
2016/0293428 FINFET DEVICE WITH VERTICAL SILICIDE ON RECESSED SOURCE/DRAIN EPITAXY REGIONS
A method of forming a semiconductor device that includes forming a fin structure from a semiconductor substrate, and forming a gate structure on a channel...
2016/0293427 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
The performances of a semiconductor device are improved. In a method for manufacturing a semiconductor device, a first insulation film, a conductive film, a...
2016/0293426 METHOD OF PRODUCING EPITAXIAL SILICON WAFER, EPITAXIAL SILICON WAFER, AND METHOD OF PRODUCING SOLID-STATE IMAGE...
Provided is an epitaxial silicon wafer free of epitaxial defects caused by dislocation clusters and COPs with reduced metal contamination achieved by higher...
2016/0293425 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A method for manufacturing a semiconductor substrate, including coating a diffusion agent composition containing an impurity diffusion ingredient on a...
2016/0293424 HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS FOR HEATING SUBSTRATE BY IRRADIATING SUBSTRATE WITH LIGHT
First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is...
2016/0293423 METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method for manufacturing a silicon carbide semiconductor device includes steps below. A silicon carbide substrate having a first main surface and a second...
2016/0293422 METHODS FOR INTEGRATED CIRCUIT DESIGN AND FABRICATION
The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer...
2016/0293421 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a metal-containing film including a first element that is a metal element and a second...
2016/0293420 METHODS FOR MANUFACTURING A SPACER WITH DESIRED PROFILE IN AN ADVANCED PATTERNING PROCESS
Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning...
2016/0293419 METHOD OF FORMING FINE PATTERNS IN A SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING AN ELECTRONIC DEVICE
Methods of forming fine patterns having a width and a pitch in semiconductor devices may be used to form a semiconductor device or electronic device. The fine...
2016/0293418 SOFT LANDING NANOLAMINATES FOR ADVANCED PATTERNING
Methods for depositing nanolaminate protective layers over a core layer to enable deposition of high quality conformal films over the core layer for use in...
2016/0293417 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns...
2016/0293416 MANUFACTURING METHOD OF PACKAGE SUBSTRATE AND PACKAGE MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A manufacturing method of a package substrate is provided. A conductive substrate is provided. A first photoresist layer is patterned to form first openings. A...
2016/0293415 ELECTRONIC DEVICE USING GROUP III NITRIDE SEMICONDUCTOR AND ITS FABRICATION METHOD AND AN EPITAXIAL MULTI-LAYER...
The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the...
2016/0293414 CRYSTALLIZATION METHODS
Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in...
2016/0293413 METHOD FOR FORMING FINFET DEVICES
A method comprises providing a substrate formed of a first semiconductor material, wherein the substrate comprises a plurality of isolation regions, etching...
2016/0293412 SPUTTERING TARGET, OXIDE SEMICONDUCTOR THIN FILM, AND METHOD FOR PRODUCING THESE
A sputtering target including an oxide that includes an indium (In) element, a tin (Sn) element, a zinc (Zn) element and an aluminum (Al) element, wherein the...
2016/0293411 CYCLICAL, NON-ISOBARIC, PORE SEALING METHOD TO PREVENT PRECURSOR PENETRATION INTO THE SUBSTRATE
A method for processing a substrate using a plasma chamber. The method includes providing the substrate on a pedestal of the plasma chamber, the substrate...
2016/0293410 BORON-CONTAINING COMPOUNDS, COMPOSITIONS, AND METHODS FOR THE DEPOSITION OF A BORON CONTAINING FILMS
Described herein are boron-containing precursor compounds, and compositions and methods comprising same, for forming boron-containing films. In one aspect, the...
2016/0293409 PREPARATION OF LANTHANIDE-CONTAINING PRECURSORS AND DEPOSITION OF LANTHANIDE-CONTAINING FILMS
Methods and compositions for depositing rare earth metal-containing layers are described herein. In general, the disclosed methods deposit the precursor...
2016/0293408 COMPOSITION FOR PATTERN FORMATION, PATTERN-FORMING METHOD, AND BLOCK COPOLYMER
A composition for pattern formation capable of forming a directed self-assembling film having a regular array structure with fine pitches accompanied by fewer...
2016/0293407 DIELECTRIC FILLING MATERIALS WITH IONIC COMPOUNDS
A method includes applying a filling material to a surface of a first layer overlying a substrate. The first layer includes a dielectric material with a...
2016/0293406 METHODS OF FORMING NANOSTRUCTURES USING SELF-ASSEMBLED NUCLEIC ACIDS, AND NANOSTRUCTURES THEREOF
A method of forming a nanostructure comprises forming a directed self-assembly of nucleic acid structures on a patterned substrate. The patterned substrate...
2016/0293405 TRENCH AND HOLE PATTERNING WITH EUV RESISTS USING DUAL FREQUENCY CAPACITIVELY COUPLED PLASMA (CCP)
A method for etching an antireflective coating on a substrate is disclosed. The substrate comprises an organic layer, an antireflective coating layer disposed...
2016/0293404 METHOD AND APPARATUS FOR TREATING SUBSTRATE
Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying...
2016/0293403 PATTERN FORMING METHOD AND HEATING APPARATUS
The present invention, when forming a pattern on a substrate, forms a film of a block copolymer containing at least two polymers on the substrate, heats the...
2016/0293402 METHOD AND SYSTEM FOR CLEANSING WAFER IN CMP PROCESS OF SEMICONDUCTOR MANUFACTURING FABRICATION
A method for cleaning a semiconductor wafer after a Chemical Mechanical Polishing (CMP) process is provided. The method includes providing the semiconductor...
2016/0293401 WET PROCESSING APPARATUS
A wafer cleaner and a method therefor that efficiently cleans a wafer with a little amount of a cleaning liquid and efficiently performs a heating wet cleaning...
2016/0293400 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying...
2016/0293399 SEMICONDUCTOR MULTILAYER STRUCTURE AND FABRICATION METHOD THEREOF
The present invention is directed to a semiconductor multilayer structure and fabrication method thereof. A semiconductor multilayer structure comprises a...
2016/0293398 DEPOSITION OF CONFORMAL FILMS BY ATOMIC LAYER DEPOSITION AND ATOMIC LAYER ETCH
Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to...
2016/0293397 WAFER PRODUCING METHOD
Disclosed herein is a wafer producing method for producing a hexagonal single crystal wafer from a hexagonal single crystal ingot. The wafer producing method...
2016/0293396 NEW TYPE RECTANGULAR ION TRAP DEVICE AND METHOD FOR ION STORAGE AND SEPARATION
The present invention discloses a rectangular ion trap device and method for ion storage. The device comprises a front end cover including left electrode,...
2016/0293395 Tool Free Gas Cone Retaining Device for Mass Spectrometer Ion Block Assembly
A mass spectrometer is disclosed comprising an atmospheric pressure interface comprising an ion block or sub-assembly having an internal passage. The...
2016/0293394 MALDI-TOF MS Method And Apparatus For Assaying An Analyte In A Bodily Fluid From A Subject
A method for assaying an analyte in a bodily fluid from a subject includes collecting a sample of the bodily fluid comprising an analyte of interest from a...
2016/0293393 High Frequency Voltage Supply Control Method for Multipole or Monopole Analysers
A voltage supply system for supplying an RF voltage to an RF resonant load comprising an ion-optical component of a mass spectrometer is disclosed. The system...
2016/0293392 ION TRANSFER TUBE WITH INTERMITTENT INLET
An ion transfer tube assembly, a mass spectrometry system, and a method for providing an ion stream to an ion detection device are described that include using...
2016/0293391 Method of Correlating Precursor and Fragment Ions
A method of mass spectrometry is disclosed comprising separating precursor ions using an ion mobility separator such that different precursor ions have...
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