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Patent # Description
2016/0300948 FINFET WITH CUT GATE STRESSOR
A semiconductor fin includes a channel region. A gate-stressor member, formed of a metal, extends transverse to the fin and includes gate surfaces that...
2016/0300947 COMPLEX SEMICONDUCTOR DEVICES OF THE SOI TYPE
The present disclosure provides, in a first aspect, a semiconductor device including an SOI substrate portion, a gate structure formed on the SOI substrate...
2016/0300946 LATERAL MOSFET WITH BURIED DRAIN EXTENSION LAYER
An integrated circuit containing an extended drain MOS transistor which has a drift layer, an upper RESURF layer over and contacting an upper surface of the...
2016/0300945 Semiconductor Device with Cell Trench Structures and a Contact Structure
A semiconductor device includes first and second cell trench structures extending from a first surface into a semiconductor body, a first semiconductor mesa...
2016/0300944 Semiconductor Device Having a Channel Separation Trench
A semiconductor device includes a transistor formed in a semiconductor substrate having a main surface. The transistor includes a source region of a first...
2016/0300943 SILICON CARBIDE SEMICONDUCTOR DEVICE
There is provided a silicon carbide semiconductor device allowing for increased switching speed with a simpler configuration. A silicon carbide semiconductor...
2016/0300942 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a first fin-shaped structure...
2016/0300941 METHOD OF MANUFACTURING ENHANCED DEVICE AND ENHANCED DEVICE
A method of manufacturing an enhanced device and an enhance device are provided. The method comprises: preparing a substrate, and forming a non-planar...
2016/0300940 MONOLITHIC INTEGRATED CIRCUIT (MMIC) STRUCTURE HAVING COMPOSITE ETCH STOP LAYER AND METHOD FOR FORMING SUCH...
A method for forming a semiconductor structure having a transistor device with a control electrode for controlling a flow of carriers between a first electrode...
2016/0300939 BI-DIRECTIONAL PUNCH-THROUGH SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In one embodiment, a bi-directional punch-through semiconductor device can include: a first transistor in a first region of a semiconductor substrate of a...
2016/0300938 Insulated Gate Bipolar Transistor and Production Method Thereof
One embodiment of the present invention includes preparing a first conductive semiconductor substrate manufactured using the MCZ method. A second conductive...
2016/0300937 Semiconductor Device with Rear-Side Insert Structure
A semiconductor device includes a semiconductor body and a rear side insertion structure. The semiconductor body has a first surface at a front side and a...
2016/0300936 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a pin diode, a new means for a soft recovery other than the means for the soft recovery using an anode layer with a low concentration and a local lifetime...
2016/0300935 SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR HAVING AN EPITAXIALLY GROWN BASE
A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector...
2016/0300934 SEMICONDUCTOR-ON-INSULATOR (SOI) LATERAL HETEROJUNCTION BIPOLAR TRANSISTOR HAVING AN EPITAXIALLY GROWN BASE
A method of forming a semiconductor structure includes providing an emitter and a collector on a surface of an insulator layer. The emitter and the collector...
2016/0300933 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a...
2016/0300932 Methods of Manufacturing Semiconductor Devices Including Gate Pattern, Multi-Channel Active Pattern and...
A semiconductor device includes a gate pattern on a substrate, a multi-channel active pattern under the gate pattern to cross the gate pattern and having a...
2016/0300931 Channel Epitaxial Regrowth Flow (CRF)
A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure...
2016/0300930 SEMICONDUCTOR DEVICE HAVING SUPER-JUNCTION STRUCTURES
A semiconductor device is disclosed. The device includes an epitaxial layer on a substrate, wherein the epitaxial layer includes first trenches and second...
2016/0300929 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A method of fabricating a semiconductor device is provided as follows. A source/drain pattern is formed on a substrate. The source/drain pattern contains...
2016/0300928 DENSELY PACKED TRANSISTOR DEVICES
A method of manufacturing a semiconductor device is provided including forming replacement gates over a semiconductor layer, forming sidewall spacers at...
2016/0300927 METHOD FOR DOPING SOURCE AND DRAIN REGIONS OF A TRANSISTOR BY MEANS OF SELECTIVE AMORPHISATION
Method including the steps consisting in: forming source and drain semiconductor blocks comprising a first layer based on a first crystalline semiconductor...
2016/0300926 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a...
2016/0300925 LOW RESISTANCE CONTACT FOR SEMICONDUCTOR DEVICES
A semiconductor device includes a substrate and a p-doped layer including a doped III-V material on the substrate. An n-type material is formed on or in the...
2016/0300924 MOSFET WITH INTEGRATED SCHOTTKY DIODE
Schottky structure fabrication includes forming two trenches in a semiconductor material. The trenches are separated from each other by a mesa. Sidewalls and a...
2016/0300923 SEMICONDUCTOR DEVICE HAVING FIN STRUCTURE THAT INCLUDES DUMMY FINS
A semiconductor device includes: a substrate, a fin-shaped structure on the substrate, and a dummy fin-shaped structure on the substrate and adjacent to the...
2016/0300922 INTEGRATED CIRCUITS WITH SPACER CHAMFERING AND METHODS OF SPACER CHAMFERING
Semiconductor devices and methods for forming the devices with spacer chamfering. One method includes, for instance: obtaining a wafer with at least one...
2016/0300921 SEMICONDUCTOR ELEMENT, METHOD FOR FABRICATING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
A semiconductor element includes: a substrate; a gate dielectric layer formed over the substrate; a flat band voltage adjusting layer formed over the gate...
2016/0300920 Method of Manufacturing a Semiconductor Device with a Polysilicon-Filled Trench
A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body at a first surface of the semiconductor body, forming a...
2016/0300919 METHOD OF FORMING SPLIT GATE MEMORY WITH IMPROVED RELIABILITY
A first doped region extends from a top surface of a substrate to a first depth. An implant into the first doped region forms a second doped region of a second...
2016/0300918 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a P-well and an N-well disposed in the semiconductor...
2016/0300917 SELF-ALIGNED CONTACT FOR TRENCH POWER MOSFET
Embodiments of the present disclosure provide a self-aligned contact for a trench power MOSFET device. The device has a layer of nitride provided over the...
2016/0300916 ELECTRONIC DEVICE
An electronic device is presented; the device comprises an electrode structure located in electrical contact with a semiconducting element. The electrode...
2016/0300915 METHOD FOR FABRICATING NANOGAP ELECTRODES, NANOGAP ELECTRODES ARRAY, AND NANODEVICE WITH THE SAME
A substrate 1 having metal layers 2A and 2B arranged to form a gap is dipped in an electroless plating solution mixed an electrolyte solution including metal...
2016/0300914 Method for Forming a Stress-Reduced Field-Effect Semiconductor Device
A method for producing a field-effect semiconductor device includes providing a semiconductor body with a first surface defining a vertical direction, defining...
2016/0300913 Field Plate Trench Semiconductor Device with Planar Gate
A semiconductor device includes first and second load contacts and a semiconductor region extending along an extension direction. A surface region is arranged...
2016/0300912 SEMICONDUCTOR DEVICE
A semiconductor device includes a resistive element wherein a diffusion resistance region provided in an upper portion of a semiconductor base and a thin film...
2016/0300911 Heterostructures for Semiconductor Devices and Methods of Forming the Same
Various heterostructures and methods of forming heterostructures are disclosed. A method includes removing portions of a substrate to form a temporary fin...
2016/0300910 SILICON CARBIDE SEMICONDUCTOR SUBSTRATE USED TO FORM SEMICONDUCTOR EPITAXIAL LAYER THEREON
A silicon carbide semiconductor substrate according to an aspect of the present disclosure has a first principal surface and a second principal surface...
2016/0300909 NANOTUBE SEMICONDUCTOR DEVICES
Semiconductor devices includes a thin epitaxial layer (nanotube) formed on sidewalls of mesas formed in a semiconductor layer. In one embodiment, a...
2016/0300908 ELECTRONIC DEVICE INCLUDING SIDE GATE AND TWO-DIMENSIONAL MATERIAL CHANNEL AND METHOD OF MANUFACTURING THE...
Provided are electronic devices and methods of manufacturing same. An electronic device includes an energy barrier forming layer on a substrate, an upper...
2016/0300907 Device Isolator with Reduced Parasitic Capacitance
Isolator structures for an integrated circuit with reduced effective parasitic capacitance. Disclosed embodiments include an isolator structure with parallel...
2016/0300906 SEMICONDUCTOR DEVICE HAVING BARRIER LAYER TO PREVENT IMPURITY DIFFUSION
A semiconductor device includes a semiconductor substrate having a first conductivity type region including a first conductivity type impurity. A first gate...
2016/0300905 Semiconductor Device Including a Superjunction Structure with Drift Regions and Compensation Structures
A vertical semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface, a first trench...
2016/0300904 EDGE TERMINATION FOR SEMICONDUCTOR DEVICES AND CORRESPONDING FABRICATION METHOD
A termination region of an IGBT is described, in which surface p-rings are combined with oxide/polysilicon-filled trenches, buried p-rings and surface field...
2016/0300903 SEMICONDUCTOR DEVICE HAVING BURIED REGION AND METHOD OF FABRICATING SAME
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the...
2016/0300902 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting display apparatus includes a substrate; a plurality of pixels disposed on the substrate, each of the plurality of pixels including a...
2016/0300901 DISPLAY PANEL
In a display panel, a light shielding layer includes first and second openings adjacent to a first edge of a first substrate. First and second color blocks...
2016/0300900 Display Device
To provide a display device in which variation in luminance among pixels is suppressed. The display device includes a transistor including first and second...
2016/0300899 THIN FILM TRANSISTOR AND ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, DISPLAY DEVICE
A thin film transistor, an array substrate and manufacturing method thereof, and a display device are provided. The thin film transistor includes an active...
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