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Patent # Description
2016/0300648 W-CONTAINING R-FE-B-CU SINTERED MAGNET AND QUENCHING ALLOY
The present invention discloses a W-containing R--Fe--B--Cu serial sintered magnet and quenching alloy. The sintered magnet contains an R.sub.2Fe.sub.14B-type...
2016/0300647 METALLIC MAGNETIC MATERIAL WITH CONTROLLED CURIE TEMPERATURE AND PROCESSES FOR PREPARING THE SAME
The invention relates to a metallic magnetic material with biocompatible elements (Ti, Ta or Mn), with glassy quasi-amorphous structure and controlled Curie...
2016/0300646 CORE-SHELL PARTICLES, COMPOSITIONS INCORPORATING THE CORE-SHELL PARTICLES AND METHODS OF MAKING THE SAME
A low viscosity polysulfide sealant composition. The composition comprises a curable polysulfide polymer; a crosslinking agent; and a plurality of core-shell...
2016/0300645 POSITIONING DEVICE FOR CABLE ACCESSORIES AND METHODS AND ASSEMBLIES INCLUDING SAME
A pre-expanded cover unit for an electrical cable includes a cold-shrinkable, tubular, elastomeric cover sleeve, a removable holdout, and a positioning device....
2016/0300644 POLYHEXAHYDROTRIAZINE DIELECTRICS
Low dielectric constant (low-k) polyhemiaminal (PHA) and polyhexahydrotriazine (PHT) materials with cyclic aliphatic ring structures are described. The...
2016/0300643 POWER/FIBER HYBRID CABLE
The present disclosure relates to a hybrid cable having a jacket with a central portion positioned between left and right portions. The central portion...
2016/0300642 DIFFERENTIAL SIGNAL TRANSMISSION CABLE AND MULTI-CORE DIFFERENTIAL SIGNAL TRANSMISSION CABLE
A differential signal transmission cable includes an insulated wire section including a pair of signal line conductors extending parallel to each other for...
2016/0300641 ELECTRIC WIRE AND METHOD FOR PRODUCING THE SAME, AND MULTI-CORE CABLE AND METHOD FOR PRODUCING THE SAME
The electric wire according to one aspect of the present invention is an electric wire comprising an insulated electric wire and one or more coating layers...
2016/0300640 DIELECTRIC MATERIAL FOR TRANSDUCER, METHOD FOR MANUFACTURING THE SAME, AND TRANSDUCER INCLUDING THE SAME
A dielectric material for a transducer is manufactured from a composition that includes metal oxide particles having hydroxy groups, a rubber polymer having a...
2016/0300639 Electrically Conductive Polyamide/Polyphenylene Ether Resin Composition and Molded Article for Vehicle Using...
An electrically conductive polyamide/polyphenylene ether resin composition and a molded article for vehicles using the same. The resin composition includes a...
2016/0300638 Article with Composite Shield and Process of Producing an Article with a Composite Shield
An article and process are described. The article includes a conductive heat-recoverable composite shield or a conductive heat-recovered composite shield...
2016/0300637 TRANSPARENT NANOWIRE ELECTRODE COMPRISING A FUNCTIONAL ORGANIC LAYER
What is presented here is a transparent electrode having: at least one carrier layer for stabilizing the electrode; at least one electrically conductive layer...
2016/0300636 Conductive Composite Formulation and Article At Least Partially Formed From a Conductive Composite Formulation
A conductive composite formulation and an article at least partially formed from a conductive composite formulation are disclosed. The conductive composite...
2016/0300635 WIRE POWER AND COMMUNICATION ARRANGEMENT
A wire design having a carbon fiber core including two or more carbon fibers that are electrically conductive. An inner dielectric insulator surrounds the...
2016/0300634 COPPER ALLOY FOR ELECTRIC AND ELECTRONIC DEVICE, COPPER ALLOY SHEET FOR ELECTRIC AND ELECTRONIC DEVICE,...
A copper alloy for electric and electronic devices includes: Zn at 23 mass % or more and at 36.5 mass % or less; Sn at 0.1 mass % or more and 0.9 mass % or...
2016/0300633 CONTACT PINS FOR GLASS SEALS AND METHODS FOR THEIR PRODUCTION
Contact pins for glass seals is provided having an iron alloy and a method for their production. The contact pins are provided with a nickel layer and coated...
2016/0300632 TRANSPARENT CONDUCTIVE FILM AND MANUFACTURING METHOD THEREOF
A transparent conductive film includes a polymeric film substrate and a transparent conductive layer on at least one of main surfaces of the polymeric film...
2016/0300631 DEVICE FOR LIFTING AND LOWERING LOADS IN VERTICAL SHAFTS, IN PARTICULAR CONTAINERS WITH RADIOACTIVE CONTENTS
The present invention is directed to a device for lifting and lowering of loads in vertical shafts, in particular of containers with radioactive contents. ...
2016/0300630 METHOD OF SYNTHESIZING AXIAL POWER DISTRIBUTIONS OF NUCLEAR REACTOR CORE USING NEURAL NETWORK CIRCUIT AND...
There are provided a method of synthesizing axial power distributions of a nuclear reactor core using a neural network circuit and an in-core monitoring system...
2016/0300629 COMBINATION OF TOP NOZZLE AND GUIDE THIMBLE FOR NUCLEAR FUEL ASSEMBLY
A joint structure between a top nozzle and a guide thimble of a nuclear fuel assembly and, more particularly, a structure for joining an inner-extension tube,...
2016/0300628 COMPACT NUCLEAR REACTOR WITH INTEGRAL STEAM GENERATOR
In an illustrative embodiment, a pressurized water nuclear reactor (PWR) includes a pressure vessel (12, 14, 16), a nuclear reactor core (10) disposed in the...
2016/0300627 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a first fuse set block including a fuse array for storing first repair information, and a control block configured to...
2016/0300626 SEMICONDUCTOR SYSTEM AND METHOD FOR TESTING SEMICONDUCTOR DEVICE
A semiconductor device includes a plurality of first input pins; a parity check unit suitable for performing a parity check for command/address signals...
2016/0300625 SEMICONDUCTOR APPARATUS AND TEST METHOD THEREOF
A semiconductor apparatus may include a first data processing block electrically coupled between a first input/output pad array and a first memory array. The...
2016/0300624 SEMICONDUCTOR MEMORY APPARATUS, REPAIR SYSTEM THEREFOR, AND METHOD FOR MANAGING APPARATUS QUALITY
A semiconductor memory apparatus may include a chip area configured to include one or more semiconductor memory chips. The semiconductor memory apparatus may...
2016/0300623 SHIFT REGISTER UNIT AND DRIVING METHOD THEREOF, SCAN DRIVING CIRCUIT AND DISPLAY DEVICE
A shift register unit and a driving method thereof, a scan driving circuit and a display device, wherein the shift register unit comprises an input terminal...
2016/0300622 CMOS Anti-Fuse Cell
A CMOS anti-fuse cell is disclosed. In one aspect, an apparatus includes an N- well and an anti-fuse cell formed on the N- well. The anti-fuse cell includes a...
2016/0300621 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes: first to third pages; first to third word line; and row decoder. In data writing, data is...
2016/0300620 MULTIPLE BIT LINE VOLTAGE SENSING FOR NON-VOLATILE MEMORY
A non-volatile memory system comprises a plurality of memory cells arranged in a three dimensional structure and one or more control circuits in communication...
2016/0300619 NON-VOLATILE MEMORY WITH PRIOR STATE SENSING
A non-volatile memory system comprises a plurality of memory cells arranged in a three dimensional structure and one or more control circuits in communication...
2016/0300618 FAST SECURE ERASE IN A FLASH SYSTEM
A flash memory controller is configured to provide a first erase mode for erasing one or more groups of flash memory cells in a flash memory device using a...
2016/0300617 MEMORY DEVICE AND ASSOCIATED ERASE METHOD
A memory device and an erase method for the memory device are provided. The memory device includes plural blocks and a controller. The plural blocks include at...
2016/0300616 METHOD, ELECTRONIC DEVICE AND CONTROLLER FOR RECOVERING ARRAY OF MEMORY CELLS
A method, an electronic device and a controller for recovering an array of memory cells are provided. The method comprises the following steps. Whether a...
2016/0300615 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND IMPROVED VERFICATION AND PROGRAMMING METHOD FOR THE SAME
Provided herein are semiconductor memory devices and operating methods thereof. A semiconductor memory device may include a memory cell array including a...
2016/0300614 CONTENT ADDRESSABLE MEMORY CELL AND CONTENT ADDRESSABLE MEMORY
In order to provide a technique for reducing an area of a content addressable memory cell and suppressing a leak current in a content addressable memory which...
2016/0300613 Semiconductor Memory Having Both Volatile and Non-Volatile Functionality Comprising Resistive Change Material...
A semiconductor memory cell including a capacitorless transistor having a floating body configured to store data as charge therein when power is applied to the...
2016/0300612 HYBRID MEMORY AND MTJ BASED MRAM BIT-CELL AND ARRAY
Described is an apparatus for a hybrid eDRAM and MRAM memory cell comprising: a capacitor having a first terminal and a second terminal; a first transistor...
2016/0300611 VOLATILE MEMORY, MEMORY MODULE INCLUDING THE SAME, AND METHOD FOR OPERATING THE MEMORY MODULE
A memory module includes an emergency power supplier, a plurality of ranks each including one or more volatile memories, a non-volatile memory, and a...
2016/0300610 RESISTANCE VARIABLE ELEMENT METHODS AND APPARATUSES
Apparatus and methods are disclosed, including a method that performs a first operation on a first resistance variable element using a common source voltage, a...
2016/0300609 NON-VOLATILE MEMORY DEVICE
A non-volatile memory device according to example embodiments includes at least one NAND flash memory and a memory controller configured to control the NAND...
2016/0300608 HYBRID ANALOG AND DIGITAL MEMORY DEVICE
A memory cell including a floating gate transistor including a floating gate, and an analog sensor element adjacent to the floating gate, where an electrical...
2016/0300607 CURRENT BASED Detection and Recording of Memory Hole-Interconnect Spacing Defects
For a non-volatile memory device having a NAND type of architecture, techniques are presented for determining NAND strings that are slow to program, including...
2016/0300606 REDUCTION OF POWER CONSUMPTION IN MEMORY DEVICES DURING REFRESH MODES
Devices, systems, and methods include an active mode to accommodate read/write operations of a memory device and a self-refresh mode to accommodate recharging...
2016/0300605 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Provided is a semiconductor device including first to fifth circuits. The first circuit includes first and second transistors. The second circuit is capable of...
2016/0300604 STT-MRAM Bitcell for Embedded Flash Applications
A spin transfer torque magnetic random access memory (STT-MRAM) device and a method to perform operations of an embedded eFlash device are disclosed. The...
2016/0300603 STACKED MEMORY DEVICE AND SYSTEM
A stack memory device may include a core chip and a base chip. The core chip may include a data receiver, a strobe signal generation unit, and a test register....
2016/0300602 SEMICONDUCTOR MEMORY APPARATUS
A semiconductor memory apparatus may include: a command decoder configured to decode an external command and output the decoded command as an internal command;...
2016/0300601 READ METHODS OF MEMORY DEVICES USING BIT LINE SHARING
A program method of a nonvolatile memory device includes loading first word line data to be stored in first memory cells connected to a first word line and...
2016/0300600 VOLATILE MEMORY ERASURE BY THE RANDOMIZATION OF DATA STORED IN MEMORY CELLS
The present invention discloses an erasure circuitry, a method for erasing a volatile memory, a volatile memory and a processing unit coupled with an operating...
2016/0300599 MISMATCH-COMPENSATED SENSE AMPLIFIER FOR HIGHLY SCALED TECHNOLOGY
Circuits and methods are provided for compensating an offset voltage measured between a first transistor and a second transistor of a sense amplifier circuit...
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