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Patent # Description
2016/0308087 BUFFER LAYER DEPOSITION FOR THIN-FILM SOLAR CELLS
Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer...
2016/0308086 Method of Manufacturing Thin-Film Solar Cells with a p-Type CdTe Layer
The present invention proposes a method to produce thin film CdTe solar cells having a pin-hole free and uniformly doped CdTe layer with a reduced layer...
2016/0308085 STACKED OPTOCOUPLER COMPONENT
A stacked optocoupler component, having a transmitter component with a transmitting area and a receiver component with a receiving area and a plate-shaped...
2016/0308084 EMITTER AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing an emitter comprises providing a semiconductor substrate having a main surface, the semiconductor substrate comprising a cavity...
2016/0308083 SILICON SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
A silicon solar cell and a method of manufacturing the same are disclosed. The silicon solar cell includes a silicon semiconductor substrate doped with first...
2016/0308082 SOLAR CELL MODULE
Provided is a solar cell module which includes: a first solar cell group and a second solar cell group each including solar cells connected by a line member; a...
2016/0308081 SOLAR CELL MODULE
A solar cell module is provided with: a first encapsulant that is provided between a plurality of solar cells and a first protective member; a second...
2016/0308080 SOLAR CELL AND MANUFACTURING METHOD THEREOF
A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity,...
2016/0308079 SOLAR CELL AND PRODUCTION METHOD THEREFOR, AND SOLAR CELL MODULE
A photoelectric conversion section of a solar cell has a first electrode layer and a collecting electrode that are formed in this order on a first principal...
2016/0308078 METHOD OF ETCHING A SEMICONDUCTOR LAYER OF A PHOTOVOLTAIC DEVICE
A method and apparatus provide for a roughened back surface of a semiconductor absorber layer of a photovoltaic device to improve adhesion. The roughened back...
2016/0308077 PHOTO DETECTOR
Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer...
2016/0308076 SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD
In a method for manufacturing a solar cell, a photoelectric conversion element, which has a surface whose outer periphery is surrounded by a plurality of...
2016/0308075 MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes,...
2016/0308074 SOLID STATE PHOTOMULTIPLIER WITH IMPROVED PULSE SHAPE READOUT
Embodiments of a solid state photomultiplier are provided herein. In some embodiments, a solid state photomultiplier may include a plurality of pixels, wherein...
2016/0308073 Apparatus and Method for a Low Loss Coupling Capacitor
Embodiments are provided herein for low loss coupling capacitor structures. The embodiments include a n-type varactor (NVAR) configuration and p-type varactor...
2016/0308072 SEMICONDUCTOR DEVICE HAVING EDGE TERMINATION STRUCTURE INCLUDING HIGH-CONCENTRATION REGION AND...
A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a...
2016/0308071 SCHOTTKY BARRIER DIODE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a Schottky barrier diode is provided, which includes: providing a semiconductor substrate including a first well region of a first...
2016/0308070 SEMICONDUCTOR DEVICE
The invention provides a semiconductor device including a substrate, a first dielectric layer, a conductive layer, a ferroelectric material layer, and a...
2016/0308069 Self-Aligned Split Gate Flash Memory
The present disclosure relates to a self-aligned split gate memory cell, and an associated method. The self-aligned split gate memory cell has a memory gate...
2016/0308068 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by...
2016/0308067 Metal oxynitride transistor devices
A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping...
2016/0308066 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
2016/0308065 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a...
2016/0308064 Vertical Thin Film Transistor Selection Devices And Methods Of Fabrication
Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating such a memory...
2016/0308063 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME
A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode...
2016/0308062 LOGIC FINFET HIGH-K/CONDUCTIVE GATE EMBEDDED MULTIPLE TIME PROGRAMMABLE FLASH MEMORY
A method for fabricating a multiple time programmable (MTP) device includes forming fins of a first conducting type on a substrate of a second conducting type....
2016/0308061 THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
A thin film transistor and a fabrication method thereof, and a display device are provided. The thin film transistor comprises an active layer, wherein, a...
2016/0308060 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first...
2016/0308059 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes: a substrate; a fin structure protruding from...
2016/0308058 FINFET AND METHOD FOR MANUFACTURING THE SAME
Methods for manufacturing a FinFET and a FinFET are provided. In various embodiments, the method for manufacturing a FinFET includes etching a base substrate...
2016/0308057 STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by...
2016/0308056 FLEXIBLE HIGH PERFORMANCE INORGANIC MATTER FET USING BUILT-IN STRAIN OF INORGANIC MATTER ON INSULATOR WAFER
Provided is a method for manufacturing an inorganic material having a tensile stress, which includes: forming an inorganic stressor from an inorganic wafer...
2016/0308055 MULTI-LAYER FIN FIELD EFFECT TRANSISTOR DEVICES AND METHODS OF FORMING THE SAME
Multi-layer fin field effect transistor devices and methods of forming the same are provided. The devices may include a fin shaped channel structure on a...
2016/0308054 EPITAXIAL SOURCE/DRAIN DIFFERENTIAL SPACERS
A process of forming an integrated circuit containing a first transistor and a second transistor of the same polarity, by forming an epitaxial spacer layer...
2016/0308053 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and...
2016/0308052 SEMICONDUCTOR DEVICES HAVING SOURCE/DRAIN REGIONS WITH STRAIN-INDUCING LAYERS AND METHODS OF MANUFACTURING SUCH...
Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic...
2016/0308051 SHAPED CAVITY FOR SIGE FILLING MATERIAL
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor...
2016/0308050 SHAPED CAVITY FOR SIGE FILLING MATERIAL
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor...
2016/0308049 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEREOF
A p-type semiconductor Fin FET device includes a fin structure disposed over a substrate. The fin structure includes a channel layer. The Fin FET device also...
2016/0308048 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A method for manufacturing a semiconductor device includes forming a fin structure including a well layer, an oxide layer disposed over the well layer and a...
2016/0308047 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device and a method for manufacturing the same are disclosed, which include a gate electrode material in a recess or a buried gate cell...
2016/0308046 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer on a...
2016/0308045 Electronic Devices Including A III-V Transistor Having A Homostructure And A Process Of Forming The Same
An electronic device can include a vertical III-V transistor having a gate electrode and a channel region within a homostructure. The channel region can be...
2016/0308044 Semiconductor Device Comprising a Transistor
A semiconductor device comprises a transistor in a semiconductor body having a first main surface. The transistor comprises a source region of a first...
2016/0308043 TRANSISTOR AND FABRICATION METHOD THEREOF
A junction-less transistor structure and fabrication method thereof are provided. The method includes providing a semiconductor substrate; and forming an...
2016/0308042 Semiconductor Device with a Vertical Channel Formed Through a Plurality of Semiconductor Layers
Semiconductor devices and manufacturing methods are provided for making channel and gate lengths independent from lithography. Also, semiconductor devices and...
2016/0308041 WIDE BAND GAP TRANSISTORS ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AND METHODS OF MANUFACTURE THEREOF
Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench,...
2016/0308040 III-Nitride Transistor With Trench Gate
A transistor includes a stack of III-nitride semiconductor layers, the stack having a frontside and a backside, a source electrode in contact with the...
2016/0308039 NITRIDE SEMICONDUCTOR DEVICE AND A PROCESS TO FORM THE SAME
A nitride semiconductor device and a process to form the same are disclosed. The semiconductor device includes a GaN channel layer, a barrier layer and a cap...
2016/0308038 SEMICONDUCTOR DEVICE
A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the...
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