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Patent # Description
2016/0307937 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY APPARATUS
A thin-film transistor (TFT) array substrate is provided. The thin-film transistor (TFT) array substrate comprises a substrate having at least a display...
2016/0307936 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor substrate includes a substrate; a first thin film transistor on the substrate and including a polycrystalline semiconductor layer, a...
2016/0307935 TFT ARRANGEMENT STRUCTURE
The present invention provides a TFT arrangement structure, comprising a first thin film transistor (T1) and a second thin film transistor (T2) controlled by...
2016/0307934 DISPLAY DEVICE AND ELECTRONIC DEVICE
To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a...
2016/0307933 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREFOR, AND DISPLAY PANEL
Disclosed are an array substrate and a manufacturing method therefor, and a display panel. The array substrate includes a first metal layer including a first...
2016/0307932 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
2016/0307931 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF...
A thin film transistor TFT substrate includes a substrate, a first conductive pattern that extends on the substrate in a first direction, a second conductive...
2016/0307930 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
The present invention provides an array substrate which is divided into a plurality of pixel units each having a first transparent electrode and a thin film...
2016/0307929 MANUFACTURE METHOD AND STRUCTURE OF TFT BACKPLATE APPLICABLE TO AMOLED
The present invention provides a manufacture method and a structure of a TFT backplate applicable to an AMOLED. The method comprises: step 1, providing a...
2016/0307928 Semiconductor Devices and Manufacturing Methods Thereof
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a first fin field effect...
2016/0307927 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
A semiconductor device includes a plurality of active fins defined by an isolation layer on a substrate, a gate structure on the active fins and the isolation...
2016/0307926 INTEGRATED CIRCUIT PRODUCT WITH BULK AND SOI SEMICONDUCTOR DEVICES
An integrated circuit product is disclosed including an SOI structure including a bulk semiconductor substrate, a buried insulation layer positioned on the...
2016/0307925 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THE SAME
An object is to manufacture and provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a...
2016/0307924 FABRICATION OF THIN-FILM ELECTRONIC DEVICES WITH NON-DESTRUCTIVE WAFER REUSE
Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that...
2016/0307923 DISPLAY DEVICE
A display device is disclosed, which comprises: a first substrate; a first metal layer disposed on a surface of the first substrate; a first insulating layer...
2016/0307922 DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
A display apparatus comprises a first substrate comprising a first external surface and a first internal surface; a second substrate having a second external...
2016/0307921 DISPLAY APPARATUS
A display apparatus includes a light permeable substrate, dummy pixels, a peripheral wiring layer and a display element layer. The dummy pixels are disposed on...
2016/0307920 DISPLAY PANEL AND MANUFACTURING METHOD THEREOF
A display panel includes an array substrate, a plurality of transparent conductive oxide patterns, and a display medium. The array substrate includes a...
2016/0307919 THIN-FILM TRANSISTOR AND FABRICATING METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY APPARATUS
The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the...
2016/0307918 SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method...
2016/0307917 THREE DIMENSIONAL NAND DEVICE WITH CHANNEL LOCATED ON THREE SIDES OF LOWER SELECT GATE AND METHOD OF MAKING THEREOF
A select gate transistor for a NAND device includes a select gate electrode having a first side, a second side, and top and a bottom, a semiconductor channel...
2016/0307916 Three-Dimensional Charge Trapping NAND Cell with Discrete Charge Trapping Film
A three-dimensional charge trap semiconductor device is constructed with alternating insulating and gate layers stacked over a substrate. During the...
2016/0307915 Selective Removal Of Charge-Trapping Layer For Select Gate Transistor And Dummy Memory Cells In 3D Stacked Memory
Fabrication techniques for a three-dimensional stack memory device remove the charge-trapping material from the select gate transistors and the dummy memory...
2016/0307914 THREE DIMENSIONAL NAND FLASH WITH SELF-ALIGNED SELECT GATE
An integrated circuit may include a pillar of semiconductor material, a field effect transistor having a channel that is formed in the pillar of semiconductor...
2016/0307913 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD OF THE SAME
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a substrate, a plurality of conductive...
2016/0307912 MULTIHEIGHT CONTACT VIA STRUCTURES FOR A MULTILEVEL INTERCONNECT STRUCTURE
Contact openings extending to sacrificial layers located at different depths can be formed by sequentially exposing a greater number of openings in a mask...
2016/0307911 Method for Preventing Floating Gate Variation
A method for manufacturing an embedded flash memory device is provided. Memory and logic shallow trench isolation (STI) regions respectively extend into memory...
2016/0307910 MEMORY DEVICE HAVING CELL OVER PERIPHERY (COP) STRUCTURE, MEMORY PACKAGE AND METHOD OF MANUFACTURING THE SAME
A memory device includes a semiconductor substrate, a peripheral circuit formed on a top surface of the semiconductor substrate, a lower insulation layer...
2016/0307909 Structure and Method to Reduce Polysilicon Loss from Flash Memory Devices During Replacement Gate (RPG) Process...
The present disclosure relates to an integrated circuit (IC), including, a flash memory device region, including a pair of split-gate flash memory cells...
2016/0307908 METAL-SEMICONDUCTOR ALLOY REGION FOR ENHANCING ON CURRENT IN A THREE-DIMENSIONAL MEMORY STRUCTURE
Resistance of a semiconductor channel in three-dimensional memory stack structures can be reduced by forming a metal-semiconductor alloy region between a...
2016/0307907 CMOS Structures and Processes Based on Selective Thinning
Methods for fabricating semiconductor devices and devices therefrom are provided. A method includes providing a substrate having a semiconducting surface with...
2016/0307906 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
According to example embodiments, a semiconductor device may include a substrate having an upper surface defining a groove and an active region, a device...
2016/0307905 VANADIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF VANADIUM-CONTAINING FILMS
Vanadium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Vanadium-containing films on...
2016/0307904 NIOBIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-CONTAINING FILMS
Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one...
2016/0307903 TANTALUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF TANTALUM-CONTAINING FILMS
Tantalum-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Tantalum-containing films on...
2016/0307902 NIOBIUM-CONTAINING FILM FORMING COMPOSITIONS AND VAPOR DEPOSITION OF NIOBIUM-CONTAINING FILMS
Niobium-containing film forming compositions are disclosed, along with methods of synthesizing the same, and methods of forming Niobium-containing films on one...
2016/0307901 MEMORY DEVICE AND ELECTRONIC DEVICE
A selection operation is performed for individual memory cells. A device includes a first memory cell and a second memory cell provided in the same row as the...
2016/0307900 SEMICONDUCTOR DEVICE HAVING AIR GAP AND METHOD FOR MANUFACTURING THE SAME, MEMORY CELL HAVING THE SAME AND...
A semiconductor device including a semiconductor substrate including a plurality of active regions and a device isolation region for isolating the plurality of...
2016/0307899 METHOD TO INDUCE STRAIN IN FINFET CHANNELS FROM AN ADJACENT REGION
Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed using two epitaxial layers of different...
2016/0307898 SEMICONDUCTOR DEVICE
A semiconductor device includes first and second active regions. Each active region includes a plurality of fin protrusions and a recessed area disposed...
2016/0307897 SEMICONDUCTOR DEVICES
A method for fabricating a semiconductor device includes providing a semiconductor substrate having a first region and a second region; and forming at least...
2016/0307896 GATE STRUCTURE WITH ADDITIONAL OXIDE LAYER AND METHOD FOR MANUFACTURING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a gate structure formed over the...
2016/0307895 FINFET STRUCTURE
A FinFET structure includes a substrate, a plurality of stripes, a metal gate and an oxide material. The stripes are on the substrate. The metal gate is on a...
2016/0307894 FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending...
2016/0307893 DIODE
A diode according to the present invention includes a semiconductor layer of a first conductivity type having an impurity concentration of 1.times.10.sup.16...
2016/0307892 SEMICONDUCTOR STRUCTURE WITH AN L-SHAPED BOTTOM PLATE
A semiconductor structure that has adjacent transistors that share a common source/drain semiconductor structure. At least one of the adjacent transistors...
2016/0307891 Semiconductor Device Comprising a Transistor Including a Body Contact Portion and Method for Manufacturing the...
A semiconductor device comprises a transistor in a semiconductor body having a main surface. The transistor comprises a source region, a drain region, a body...
2016/0307890 SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
Provided is a semiconductor device with a field effect transistor. The semiconductor device may include a substrate including an active pattern, a separation...
2016/0307889 Semiconductor Component Arrangement Comprising a Trench Transistor
A semiconductor component arrangement method includes producing a trench transistor structure including at least one trench disposed in the semiconductor body...
2016/0307888 REVERSE-CONDUCTING SEMICONDUCTOR DEVICE
A Reverse-conducting semiconductor device which comprises a freewheeling diode and an insulated gate bipolar transistor on a common wafer, part of which wafer...
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