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Patent # Description
2016/0307787 CERAMIC HEATER AND ELECTROSTATIC CHUCK
As viewed in plane, a ceramic heater includes zone heat-generating elements disposed in respective heating zones so as to heat a ceramic substrate...
2016/0307786 Hybrid Thermal Electrostatic Clamp
An electrostatic clamp having improved temperature uniformity is disclosed. The electrostatic clamp includes an LED array mounted along an annular ring so as...
2016/0307785 GAS INJECTION DEVICE AND ASSISTING MEMBER
A gas injection device a placement portion on which a first or second container is placed, an ejection portion which is placed on the placement portion and...
2016/0307784 SUBSTRATE PROCESSING SYSTEM
A substrate processing system includes a processing unit having one or more processing chambers each of which includes a mounting table configured to mount...
2016/0307783 SUBSTRATE PROCESSING APPARATUS, RECORDING MEDIUM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate processing apparatus includes first and second process chambers; a mounting section on which a housing vessel that houses the substrate is mounted;...
2016/0307782 Buffer Chamber Wafer Heating Mechanism And Supporting Robot
Buffer chamber including robots, a carousel and at least one heating module for use with a batch processing chamber are described. Robot configurations for...
2016/0307781 ION INJECTOR AND LENS SYSTEM FOR ION BEAM MILLING
The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus....
2016/0307780 STRUCTURE AND METHOD TO MINIMIZE WARPAGE OF PACKAGED SEMICONDUCTOR DEVICES
A packaged semiconductor device includes a substrate, an electronic device coupled to the substrate, encapsulant including a first major surface surrounding...
2016/0307779 WAFER COATING SYSTEM AND METHOD OF MANUFACTURING CHIP PACKAGE
A wafer coating system includes a wafer chuck, a flowing insulating material sprayer and a wafer tilting lifting pin. The wafer chuck has a carrier part and a...
2016/0307778 Die package with Openings Surrounding End-portions of Through Package Vias (TPVs) and Package on Package (PoP)...
Various embodiments of mechanisms for forming through package vias (TPVs) with openings surrounding end-portions of the TPVs and a package on package (PoP)...
2016/0307777 METHOD FOR FABRICATING ELECTRODE AND SEMICONDUCTOR DEVICE
A minute transistor is provided. A transistor having low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. An...
2016/0307776 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the...
2016/0307775 METHOD FOR ETCHING ORGANIC FILM
Disclosed is a method for etching an organic film. Plasma of a processing gas containing hydrogen gas and nitrogen gas is generated within a processing...
2016/0307774 UTLIZATION OF ANGLED TRENCH FOR EFFECTIVE ASPECT RATIO TRAPPING OF DEFECTS IN STRAIN-RELAXED HETEROEPITAXY OF...
Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with...
2016/0307773 Method of Manufacturing Semiconductor Devices
A substrate having an insulating layer including an oxide is loaded into a chamber, and at least a part of the insulating layer is removed by injecting a...
2016/0307772 SPACER FORMATION PROCESS WITH FLAT TOP PROFILE
Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may...
2016/0307771 GAS-PHASE SILICON NITRIDE SELECTIVE ETCH
A method of etching silicon nitride on patterned heterogeneous structures is described and includes a gas phase etch using anhydrous vapor-phase HF. The HF may...
2016/0307770 METHOD AND DEVICE FOR TREATING OBJECTS WITH A LIQUID
In the treatment of a semiconductor wafer (8), a treatment medium, in particular an etching or cleaning liquid, is applied to the semiconductor wafer (8) from...
2016/0307769 Lithographic Technique Incorporating Varied Pattern Materials
A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a...
2016/0307768 SINGLE PLATFORM, MULTIPLE CYCLE SPACER DEPOSITION AND ETCH
A first portion of a multiple cycle spacer is formed on a sidewall of a patterned feature over a substrate. A spacer layer is deposited on the first portion...
2016/0307767 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A method of forming a semiconductor device includes sequentially forming a hard mask layer and a first sacrificial layer on a substrate, forming a first...
2016/0307766 CYCLIC DOPED ALUMINUM NITRIDE DEPOSITION
A process for depositing doped aluminum nitride (doped AlN) is disclosed. The process comprises subjecting a substrate to temporally separated exposures to an...
2016/0307765 DRY ETCHING METHOD
A dry etching method for isotropically etching each of SiGe layers selectively relative to each of Si layers in a laminated film is provided. The laminated...
2016/0307764 METHOD OF ETCHING SEMICONDUCTOR STRUCTURES WITH ETCH GAS
Disclosed are sulfur-containing compounds for plasma etching channel holes, gate trenches, staircase contacts, capacitor holes, contact holes, etc., in...
2016/0307763 THIN PLATE SEPARATING METHOD
A thin plate is separated from an SiC substrate having a first surface, an opposite second surface, a c-axis extending from the first surface to the second...
2016/0307762 METHODS OF CURING A DIELECTRIC LAYER FOR MANUFACTURE OF A SEMICONDUCTOR DEVICE
A method of curing a dielectric layer, such as a dielectric layer that has a relatively small thickness and/or a narrow width or a complicated shape, is...
2016/0307761 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE WITH RECESS
The present disclosure provides a method of manufacturing a semiconductor device. The method includes providing a substrate with a dielectric disposed thereon,...
2016/0307760 METHOD AND SYSTEM FOR APPLYING MATERIALS ON A SUBSTRATE
Embodiments of the invention are directed to a method of printing lines. A method may include positioning a plurality of print units according to a predefined...
2016/0307759 PLATING METHOD, RECORDING MEDIUM AND PLATING SYSTEM
A plating method includes forming a catalyst layer 118 on a surface of a substrate including an inner surface of a recess 112; drying the substrate having the...
2016/0307758 STRUCTURE AND METHOD OF SEMICONDUCTOR DEVICE STRUCTURE WITH GATE
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure...
2016/0307757 METHOD FOR CONTROLLING SURFACE CHARGE ON WAFER SURFACE IN SEMICONDUCTOR FABRICATION
A method for processing a semiconductor wafer is provided. The method includes performing a discharging process over the semiconductor wafer in a discharging...
2016/0307756 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A method of manufacturing a silicon carbide semiconductor device having a contact formed between a p-type silicon carbide semiconductor body and a metal...
2016/0307755 METHOD FOR FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE
A method for forming fine patterns includes patterning a hard mask layer on an etch target layer to form sacrificial pillars and a first opening disposed...
2016/0307754 SILICON SUBSTRATES WITH COMPRESSIVE STRESS AND METHODS FOR PRODUCTION OF THE SAME
A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate...
2016/0307753 METHOD FOR PROCESSING A CARRIER AND AN ELECTRONIC COMPONENT
In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer...
2016/0307752 GAS FLOW PROFILE MODULATED CONTROL OF OVERLAY IN PLASMA CVD FILMS
Methods for modulating local stress and overlay error of one or more patterning films may include modulating a gas flow profile of gases introduced into a...
2016/0307751 ATOMIC LAYER DEPOSITION OF SILICON CARBON NITRIDE BASED MATERIALS
A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle...
2016/0307750 DUAL COATING AND LIFT-OFF METHOD FOR PROTECTING PATTERNED DIELECTRIC-METAL COATINGS
A dual coating and lift-off method for protecting patterned dielectric-metal coatings using a 2-layer lithography process that is exposed and developed to...
2016/0307749 PHYSICAL VAPOR DEPOSITION OF AN ALUMINUM NITRIDE FILM
A method for physical vapor deposition of an aluminum nitride film, comprising: positioning a substrate and an aluminum target in a chamber; vacuuming the...
2016/0307748 Deposition Of Si-H Free Silicon Nitride
Methods for the deposition of SiN films comprising cyclical exposure of a substrate surface to a silicon halide comprising one or more of bromine and/or iodine...
2016/0307747 METHODS FOR DEPOSITING A MONOLAYER ON A SUBSTRATE
Methods and compositions for depositing a monolayer onto a surface of a substrate are described. The method can include contacting the surface with a vapor...
2016/0307746 CLEANING COMPOSITION AND METHODS THEREOF
Provided is a cleaning solution and its applications. The cleaning solution comprises a mixture of a basic chemical compound and a solvent solution. In some...
2016/0307745 Systems and Methods for Improved Robustness for Quadrupole Mass Spectrometry
A method for analyzing a sample by mass spectrometry includes producing ions from the sample, delivering the ions to an entrance of a multipole, and applying...
2016/0307744 Atmospheric Interface for Electrically Grounded Electrospray
An interface for a mass spectrometer system is provided. The interface can include an inner ceramic tube fabricated from a first ceramic material and an outer...
2016/0307743 CHAMBER WITH VERTICAL SUPPORT STEM FOR SYMMETRIC CONDUCTANCE AND RF DELIVERY
A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for...
2016/0307742 EDGE RING FOR BEVEL POLYMER REDUCTION
Embodiments of the present disclosure include methods and apparatuses utilized to reduce residual film layers from a substrate periphery region, such as an...
2016/0307741 METHOD FOR SURFACE TREATMENT OF UPPER ELECTRODE, PLASMA PROCESSING APPARATUS AND UPPER ELECTRODE
In a method for surface treatment of an upper electrode, a first step is performed to roughen a facing surface of the upper electrode facing a lower electrode...
2016/0307740 Substrate Processing System and Ceramic Coating Method Therefor
A substrate processing system and a method of coating a ceramic layer therewith are provided. The system may include a chamber and a ceramic layer on an inner...
2016/0307739 REMOTE PLASMA GENERATOR USING CERAMIC
A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma...
2016/0307738 CONTROL OF IMPEDANCE OF RF DELIVERY PATH
A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The...
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