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Patent # Description
2016/0315207 TEXTURED SILICON SUBSTRATE AND METHOD
A method of texturizing a silicon substrate comprising a) contacting the substrate with an etching solution comprising glycolic acid, b) etching a surface of...
2016/0315206 PHOTOVOLTAIC CELL, IN PARTICULAR SOLAR CELL, AND METHOD OF PRODUCING A PHOTOVOLTAIC CELL
The invention relates to a photovoltaic cell, in particular a solar cell, comprising a absorber layer which is arranged in front of an anti-reflection layer,...
2016/0315205 BROADBAND GRAPHENE-BASED OPTICAL LIMITER FOR THE PROTECTION OF BACKSIDE ILLUMINATED CMOS DETECTORS
An optical device may include a sacrificial limiter filter including at least one layer of graphene disposed on a substrate. The at least one layer of graphene...
2016/0315204 DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME
A diode device including a III-N compound layer is provided. The III-N compound layer has a channel region therein. A cathode region is located on the III-N...
2016/0315203 SEMICONDUCTOR DEVICE HAVING BARRIER REGION AND EDGE TERMINATION REGION ENCLOSING BARRIER REGION
A semiconductor device according to an aspect of the present disclosure includes a semiconductor substrate having a first conductivity type and having a...
2016/0315202 DISPLAY DEVICE AND ELECTRONIC DEVICE
An object is, in a structure where switch circuits in a signal line driver circuit is placed over the same substrate as a pixel portion, to reduce the size of...
2016/0315201 DISPLAY DEVICE
A display device is provided. A thin film transistor structure of the display device includes a substrate, a gate electrode disposed on the substrate, a gate...
2016/0315200 METHOD OF MANUFACTURING AMORPHOUS IGZO TFT-BASED TRANSIENT SEMICONDUCTOR
Disclosed is a method of manufacturing an a-IGZO TFT-based transient semiconductor. The method includes (a) stacking a thermal oxide layer on a silicon...
2016/0315199 PHOTO MASK, THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
The present invention discloses a photo mask for defining the pattern of a data layer and a semiconductor layer of a thin film transistor. The photo mask has a...
2016/0315198 SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SAME AND ALIPHATIC POLYCARBONATE
It is an object of the invention to provide a thin film transistor and a method for producing the same, which will easily achieve self-aligned formation of a...
2016/0315197 THIN-FILM TRANSISTOR, PREPARATION METHOD THEREOF, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present invention discloses a thin-film transistor, a preparation method thereof, an array substrate comprising the thin-film transistor, and a display...
2016/0315196 BURIED SOURCE SCHOTTKY BARRIER THIN FILM TRANSISTOR AND METHOD OF MANUFACTURE
A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a...
2016/0315195 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE
An array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method comprises: forming a first gate metal...
2016/0315194 PREPARATION METHOD OF REDUCED AND N-DOPED GRAPHENE OXIDE AND THE REDUCED AND N-DOPED GRAPHENE OXIDE THEREBY
The present invention provides a preparation method of the reduced and N-doped graphene oxide comprising the steps of preparing the mixed solution containing...
2016/0315193 SEMICONDUCTOR DEVICES INCLUDING FIN BODIES WITH VARIED EPITAXIAL LAYERS
A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a...
2016/0315192 SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE FOR APPLYING TENSILE STRESS TO SILICON SUBSTRATE, AND METHOD OF...
A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the...
2016/0315191 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a substrate, a first semiconductor fin, a second semiconductor fin, and a first lightly-doped drain (LDD) region. The first...
2016/0315190 INSULATED GATE SWITCHING ELEMENT
An insulated gate switching element includes: a semiconductor substrate; a gate insulating film disposed on a surface of the semiconductor substrate; and a...
2016/0315189 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
A semiconductor device including a substrate having a drain region therein is provided. A gate-electrode layer is disposed on the drain region. A first...
2016/0315188 LATERAL HIGH VOLTAGE TRANSISTOR
A device and a method for forming a device are disclosed. The device includes a substrate with a high voltage (HV) device region. The HV device region is...
2016/0315187 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device of an embodiment includes a p.sup.+-type region selectively disposed in a surface of an n-type silicon carbide epitaxial layer disposed...
2016/0315186 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source...
2016/0315185 ELECTRONIC DEVICE INCLUDING A CONDUCTIVE ELECTRODE
An electronic device can include a semiconductor layer, an insulating layer overlying the semiconductor layer, and a conductive electrode. In an embodiment, a...
2016/0315184 Semiconductor Device, and Alternator and Power Conversion Device Which Use Same
The semiconductor device has a first external electrode having an outer peripheral section, which has a circular shape in top plan view and which is to be...
2016/0315183 METHOD AND STRUCTURE FOR MULTIGATE FINFET DEVICE EPI-EXTENSION JUNCTION CONTROL BY HYDROGEN TREATMENT
Embodiments are directed to forming a structure comprising at least one fin, a gate, and a spacer, applying an annealing process to the structure to create a...
2016/0315182 SEMICONDUCTOR DEVICE STRUCTURES WITH SELF-ALIGNED FIN STRUCTURE(S) AND FABRICATION METHODS THEREOF
Semiconductor device structures having fin structure(s) and fabrication methods thereof are presented. The methods include: providing a first mask above a...
2016/0315181 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for fabricating a semiconductor device includes: forming a metal pattern including nickel on a semiconductor layer, the metal pattern having upper and...
2016/0315180 NITRIDE SEMICONDUCTOR DEVICE
A nitride semiconductor device according to the present invention includes a nitride semiconductor layer having a gate, a source and a drain and a field plate...
2016/0315179 COMPOUND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A compound semiconductor device includes: a substrate; a nucleation layer over the substrate; a first buffer layer over the nucleation layer; a second buffer...
2016/0315178 SEMICONDUCTOR DEVICE
A highly reliable semiconductor device the yield of which can be prevented from decreasing due to electrostatic discharge damage is provided. A semiconductor...
2016/0315177 METHOD FOR FABRICATING ASYMMETRICAL THREE DIMENSIONAL DEVICE
A method of forming an asymmetrical three dimensional semiconductor device. The method may include providing a fin structure extending perpendicularly from a...
2016/0315176 METHOD FOR FABRICATING THREE DIMENSIONAL DEVICE
A method for forming a three dimensional device. The method may include directing ions to an end surface of an extension region of a fin structure, the fin...
2016/0315175 METHOD AND STRUCTURE OF FORMING FINFET ELECTRICAL FUSE STRUCTURE
An e-Fuse structure is provided on a surface of an insulator layer of a semiconductor-on-insulator substrate (SOI). The e-Fuse structure includes a first metal...
2016/0315174 FORMING A FIN USING DOUBLE TRENCH EPITAXY
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy....
2016/0315173 METHOD OF MANUFACTURING DISPLAY PANEL
A method of manufacturing a display panel having a plurality of lightly doped drain thin film transistors arranged as a matrix includes forming a semiconductor...
2016/0315172 FINFET DEVICES HAVING ASYMMETRICAL EPITAXIALLY-GROWN SOURCE AND DRAIN REGIONS AND METHODS OF FORMING THE SAME
Fin field-effect transistor (FinFET) devices and methods of forming the same are provided herein. In an embodiment, a FinFET device includes a semiconductor...
2016/0315171 SEMICONDUCTOR DEVICE HAVING METAL GATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING METAL GATE
A method for manufacturing a semiconductor device having a metal gate includes forming a filling layer and a high-K gate dielectric layer in the first recess...
2016/0315170 TRIPLE WELL ISOLATED DIODE AND METHOD OF MAKING
A triple well isolated diode including a substrate having a first conductivity type and a buried layer in the substrate. The buried layer has a second...
2016/0315169 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
When p-type impurities are implanted into a SiC substrate using a laser, controlling the concentration is difficult. A p-type impurity region is formed by a...
2016/0315168 PROCESS FOR FORMING GATE INSULATORS FOR TFT STRUCTURES
Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.
2016/0315167 PARASITIC CAPACITANCE REDUCTION STRUCTURE FOR NANOWIRE TRANSISTORS AND METHOD OF MANUFACTURING
Embodiments of the invention describe parasitic capacitance reduction structure for nanowire transistors and method of manufacturing. According to one...
2016/0315166 STRATIFIED GATE DIELECTRIC STACK FOR GATE DIELECTRIC LEAKAGE REDUCTION
A stratified gate dielectric stack includes a first high dielectric constant (high-k) gate dielectric comprising a first high-k dielectric material, a...
2016/0315165 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit device includes a substrate including an active region, an interfacial layer including a lower insulating layer on the active region, the...
2016/0315164 SEMICONDUCTOR DEVICES INCLUDING A RARE EARTH ELEMENT AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A...
Semiconductor devices are provided. A semiconductor device includes an insulating layer. The semiconductor device includes a rare earth element supply layer on...
2016/0315163 PROCESS FOR FORMING GATE INSULATORS FOR TFT STRUCTURES
Precursors suitable for vapor deposition of layers in thin film transistors and electronic devices comprising such thin film transistors are disclosed.
2016/0315162 CONTACT GEOMETRY HAVING A GATE SILICON LENGTH DECOUPLED FROM A TRANSISTOR LENGTH
A semiconductor device structure includes an active region positioned in a semiconductor substrate and a gate structure of a transistor positioned above the...
2016/0315161 SEMICONDUCTOR DEVICE WITH A P-N JUNCTION FOR REDUCED CHARGE LEAKAGE AND METHOD OF MANUFACTURING THE SAME
Provided are improved semiconductor memory devices and methods for manufacturing such semiconductor memory devices. A method may incorporate the formation of a...
2016/0315160 SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING SILICON CARBON
Provided is a semiconductor device. In some examples, the semiconductor device includes an fin active region protruding from a substrate, gate patterns...
2016/0315159 LOW RESISTANCE SINKER CONTACT
An semiconductor device with a low resistance sinker contact wherein the low resistance sinker contact is etched through a first doped layer and is etched into...
2016/0315158 THIN-FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME,...
A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base...
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