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Patent # Description
2016/0315157 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Described herein is a semiconductor device comprising: a semiconductor substrate; a trench provided at a surface of the semiconductor substrate; a first...
2016/0315156 FORMING A FIN USING DOUBLE TRENCH EPITAXY
The present invention relates generally to semiconductor devices and more particularly, to a structure and method of forming a fin using double trench epitaxy....
2016/0315155 FIELD EFFECT TRANSISTOR AND METHOD OF MAKING
A method of fabricating a FET includes forming a gate on the surface of a substrate. A trench contact extends between a first region located proximate the...
2016/0315154 Method of planarizing a semiconductor wafer and semiconductor wafer
Various embodiments provide a method of planarizing a semiconductor wafer, wherein the method comprises providing a semiconductor wafer comprising a surface;...
2016/0315153 GROUP III-N NANOWIRE TRANSISTORS
A group III-N nanowire is disposed on a substrate. A longitudinal length of the nanowire is defined into a channel region of a first group III-N material, a...
2016/0315152 INTEGRATED MULTICHANNEL AND SINGLE CHANNEL DEVICE STRUCTURE AND METHOD OF MAKING THE SAME
An integrated circuit is disclosed that includes a single channel device having a first portion of a single shared heterostructure overlying a substrate...
2016/0315151 INSULATED GATE SWITCHING ELEMENT AND METHOD OF CONTROLLING THE INSULATED GATE SWITCHING ELEMENT
A semiconductor substrate includes: a first conduction type first semiconductor region exposed at a first surface; a second conduction type main base region...
2016/0315150 Method and Power Semiconductor Device Having an Insulating Region Arranged in an Edge Termination Region
A power semiconductor device includes a semiconductor body having first and second opposing sides and an edge termination region arranged between an active...
2016/0315149 METHOD AND STRUCTURE FOR FORMING DIELECTRIC ISOLATED FINFET WITH IMPROVED SOURCE/DRAIN EPITAXY
A semiconductor structure is provided that includes a fin structure of, from bottom to top, a semiconductor punch through stop (PTS) doping fin portion, a...
2016/0315148 ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS
A method to form a semiconductor structure with an active region and a compatible dielectric layer is described. In one embodiment, a semiconductor structure...
2016/0315147 DESIGN STRUCTURE FOR FINFET FINS
A design structure for fins in a fin array that can be included in a fin field effect transistor (FinFET), the design structure including: a semiconductor fin...
2016/0315146 SEMICONDUCTOR DEVICE HAVING ASYMMETRICAL SOURCE/DRAIN
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper...
2016/0315145 CIRCUIT STRUCTURE HAVING ISLANDS BETWEEN SOURCE AND DRAIN AND CIRCUIT FORMED
A method of making a circuit structure includes growing a bulk layer over a substrate, and growing a donor-supply layer over the bulk layer. The method further...
2016/0315144 MINIMIZING SHORTING BETWEEN FINFET EPITAXIAL REGIONS
The present invention relates generally to semiconductors, and more particularly, to a structure and method of minimizing shorting between epitaxial regions in...
2016/0315143 METHOD FOR FABRICATING AN IMPROVED FIELD EFFECT DEVICE
A SOI substrate is covered by a semiconductor material pattern which includes a dividing pattern made from electrically insulating material. The dividing...
2016/0315142 METHOD FOR MANUFACTURING VERTICAL SUPER JUNCTION DRIFT LAYER OF POWER SEMICONDUCTOR DEVICES
A method for manufacturing a vertical super junction drift layer of a power semiconductor device. The method includes: a): adopting P+ single crystal silicon...
2016/0315141 High Breakdown N-Type Buried Layer
A semiconductor device has an n-type buried layer formed by implanting antimony and/or arsenic into the p-type first epitaxial layer at a high dose and low...
2016/0315140 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
An IGBT region includes a collector layer, a first drift layer, a first body layer, an emitter layer, and a trench gate reaching the first drift layer through...
2016/0315139 HIGH DENSITY THREE-DIMENSIONAL INTEGRATED CAPACITORS
A component includes a substrate and a capacitor formed in contact with the substrate. The substrate can consist essentially of a material having a coefficient...
2016/0315138 HIGH DENSITY CAPACITOR STRUCTURE AND METHOD
High density capacitor structures based on an array of semiconductor nanorods are provided. The high density capacitor structure can be a plurality of...
2016/0315137 METHODS OF FORMING DIELECTRIC LAYERS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME
To form a dielectric layer, an organometallic precursor is adsorbed on a substrate loaded into a process chamber. The organometallic precursor includes a...
2016/0315136 INTEGRATED INDUCTOR
An integrated inductor includes a patterned ground shield, an inner rail, and an inductor. The patterned ground shield is disposed in a first direction. The...
2016/0315135 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
An OLED display device includes a display area of a substrate to display images; a non-display area surrounding the display area and applying signals to pixels...
2016/0315134 METHOD FOR MANUFACTURING CIRCUIT BOARD, METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE,AND LIGHT-EMITTING DEVICE
A circuit board in which damage to an electrode is reduced or a light-emitting device in which damage to an electrode is reduced is manufactured. A method for...
2016/0315133 DISPLAY DEVICE
A display device is provided including a plurality of pixels, wherein the plurality of pixels is arranged in a matrix form, wherein each of the plurality of...
2016/0315132 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode (OLED) display includes a substrate, a thin film transistor disposed on the substrate, a first electrode disposed on the thin...
2016/0315131 ARRAY SUBSTRATE, FABRICATION METHOD THEREOF AND DISPLAY DEVICE
An array substrate of an organic light-emitting display device, a fabrication method thereof and an organic light-emitting display device are provided. The...
2016/0315130 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device and manufacturing method thereof with a high level of reliability is provided without increasing the number of manufacturing processes. The...
2016/0315129 FLEXIBLE OLED DISPLAY HAVING INCREASED LIFETIME
Embodiments of the disclosed subject matter provide a device including an active-matrix driven flexible display including a plurality of Organic Light Emitting...
2016/0315128 ORGANIC LIGHT EMITTING DISPLAY DEVICE
Provided are an organic light emitting display device, the display device including: a substrate defined into a display area and a non-display area; sub-pixels...
2016/0315127 DISPLAY DEVICE HAVING SUB-PIXEL ARRAY STRUCTURE
A display device is discussed. The display device according to an embodiment includes a substrate including a plurality of gate lines, and a plurality of data...
2016/0315126 OLED DISPLAY
An OLED display is disclosed, which includes a substrate and a plurality of pixel groups arranged on the substrate. Each pixel group includes a first, a...
2016/0315125 ORGANIC ELECTROLUMINESCENCE DEVICE AND ELECTRONIC APPARATUS
A organic electroluminescence device includes: a plurality of pixels each including an organic layer and a second electrode in this order on a first electrode...
2016/0315124 SUBSTRATE FOR TRANSPARENT FLEXIBLE DISPLAY AND ORGANIC LIGHT-EMITTING DIODE DISPLAY INCLUDING THE SAME
A substrate of a transparent flexible display and an organic light-emitting diode display including the same are disclosed. In one aspect, the substrate...
2016/0315123 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
An organic light emitting diode display according to one or more embodiments of the present invention includes: a substrate; a plurality of organic light...
2016/0315122 CROSS POINT ARRAYS OF 1-R NONVOLATILE RESISTIVE CHANGE MEMORY CELLS USING CONTINUOUS NANOTUBE FABRICS
The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change...
2016/0315121 SOCKET STRUCTURE FOR THREE-DIMENSIONAL MEMORY
Socket structures that are configured to use area efficiently, and methods for providing socket regions that use area efficiently, are provided. The staircase...
2016/0315120 BLOCK ARCHITECTURE FOR VERTICAL MEMORY ARRAY
Three-dimensional memory structures that are configured to use area efficiently, and methods for providing three-dimensional memory structures that use area...
2016/0315119 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device includes a plurality of memory cells arranged in rows and columns; a source line electrically connected to one terminal of each...
2016/0315118 HIGH ANNEALING TEMPERATURE PERPENDICULAR MAGNETIC ANISOTROPY STRUCTURE FOR MAGNETIC RANDOM ACCESS MEMORY
A perpendicular synthetic antiferromagnetic (pSAF) structure and method of making such a structure is disclosed. The pSAF structure comprises a first high...
2016/0315117 METHOD OF PRODUCING SEMICONDUCTOR EPITAXIAL WAFER, SEMICONDUCTOR EPITAXIAL WAFER, AND METHOD OF PRODUCING...
A production method for a semiconductor epitaxial wafer includes: a first step of irradiating a surface of a semiconductor wafer with cluster ions to form a...
2016/0315116 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE
A method of manufacturing a photoelectric conversion device includes forming a wiring structure above a semiconductor substrate including a photoelectric...
2016/0315115 LIGHT CONTROL DEVICE, IMAGING ELEMENT, AND IMAGING DEVICE
A light control device according to the present disclosure includes: stacked M (provided that M.gtoreq.1) light control layers 113M in each of which a first...
2016/0315114 Image Sensor, An Inspection System And A Method Of Inspecting An Article
A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 10.sup.13...
2016/0315113 PHOTOSENSITIVE IMAGING APPARATUS AND METHOD OF FORMING SAME
A photosensitive imaging apparatus and a method of forming such an apparatus are disclosed. The apparatus includes: a first semiconductor substrate, including...
2016/0315112 4-COLOR PIXEL IMAGE SENSOR HAVING VISIBLE COLOR NOISE REDUCTION FUNCTION IN NEAR INFRARED RAY PIXEL
A 4-color pixel image sensor having a visible color noise reduction function in a near infrared ray (NIR) pixel may include an active pixel region having a...
2016/0315111 UNIT PIXEL FOR IMAGE SENSOR
A unit pixel formed on a substrate and configured to convert incident light to an electrical signal is provided. The unit pixel includes: a source having a...
2016/0315110 Back-Illuminated Sensor Chips
A back-illuminated sensor chip is disclosed, which includes one or more pixel areas each including a plurality of pixels located in a plane and arranged in a...
2016/0315109 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME, AND IMAGING APPARATUS
A solid-state imaging device includes: a semiconductor substrate provided with an effective pixel region including a light receiving section that ...
2016/0315108 RADIATION IMAGE SENSOR
A radiation image sensor includes a charge generation section and, a circuit board accumulating and transferring charge generated in the charge generation...
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