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Patent # Description
2016/0322508 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes forming a first fin-shaped silicon layer and a second fin-shaped silicon layer on a substrate using a...
2016/0322507 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME
A thin film transistor array panel, including a substrate; a gate electrode on the substrate; a semiconductor layer on the substrate; a gate insulating layer...
2016/0322506 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device using an oxide semiconductor, with stable electric characteristics and high reliability. In a process for manufacturing a...
2016/0322505 SEMICONDUCTOR DEVICE
Oxide layers which contain at least one metal element that is the same as that contained in an oxide semiconductor layer including a channel are formed in...
2016/0322504 SEMICONDUCTOR DEVICE, DRIVER CIRCUIT, AND DISPLAY DEVICE
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with...
2016/0322503 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a semiconductor, a first conductor, a second conductor, a third conductor, a fourth conductor, a first insulator, a second...
2016/0322502 SEMICONDUCTOR STRUCTURE
A semiconductor structure includes a substrate and a first element disposed in the substrate and arranged along a first direction. The first element is made of...
2016/0322501 SILICON GERMANIUM ALLOY FINS WITH REDUCED DEFECTS
A silicon germanium alloy is formed on sidewall surfaces of a silicon fin. An oxidation process or a thermal anneal is employed to convert a portion of the...
2016/0322500 FIN FIELD EFFECT TRANSISTOR INCLUDING A STRAINED EPITAXIAL SEMICONDUCTOR SHELL
A semiconductor fin including a single crystalline semiconductor material is formed on a dielectric layer. A semiconductor shell including an epitaxial...
2016/0322499 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device includes a first gate stack and a second gate stack over a substrate, an isolation structure in the substrate, a first epitaxial (epi)...
2016/0322498 SEMICONDUCTOR DEVICE INCLUDING FIN STRUCTURES AND MANUFACTURING METHOD THEROF
A semiconductor device includes a Fin FET transistor. The Fin FET transistor includes a first fin structure extending in a first direction, a gate stack and a...
2016/0322497 SOURCE/DRAIN STRUCTURE AND MANUFACTURING THE SAME
A fin-like field-effect transistor (FinFET) device is disclosed. The device includes a semiconductor substrate having a source/drain region, a plurality of...
2016/0322496 Semiconductor Device and Method of Forming the Same
A method of forming a semiconductor device includes forming a NMOS gate structure over a substrate. The method further includes forming an amorphized region in...
2016/0322495 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes an active pattern protruding from a substrate and extending in a first direction, first and second gate electrodes intersecting...
2016/0322494 N-TYPE FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
The present disclosure provides N-type fin field-effect transistors and fabrication methods thereof. A method for fabricating an N-type fin field-effect...
2016/0322493 Relaxed Semiconductor Layers With Reduced Defects and Methods of Forming the Same
Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si.sub.1-xGe.sub.x on a silicon substrate, wherein the epitaxial layer of...
2016/0322492 SEMICONDUCTOR DEVICE
A semiconductor device includes a first pattern on a first active region, a second pattern on a second active region, and a third pattern on a third active...
2016/0322491 Semiconductor Devices and Methods for Forming a Semiconductor Device
A semiconductor device includes an electrical device and has an output capacitance characteristic with at least one output capacitance maximum located at a...
2016/0322490 Super-Junction Semiconductor Device Comprising Junction Termination Extension Structure and Method of Manufacturing
A super-junction semiconductor device includes a junction termination area at a first surface of a semiconductor body and at least partly surrounding an active...
2016/0322489 Semiconductor Device and Trench Field Plate Field Effect Transistor With a Field Dielectric Including Thermally...
A semiconductor device includes compensation structures that extend from a first surface into a semiconductor portion. Sections of the semiconductor portion...
2016/0322488 SEMICONDUCTOR DEVICE INCLUDING A GATE ELECTRODE ON A PROTRUDING GROUP III-V MATERIAL LAYER AND METHOD OF...
A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate,...
2016/0322487 FIELD EFFECT TRANSISTOR
A field effect transistor includes: a semiconductor substrate having a main surface; a plurality of source electrodes and a plurality of drain electrodes...
2016/0322486 FLEXIBLE DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a flexible device including a two-dimensional (2D) material, e.g., graphene, includes forming a dielectric layer on a first...
2016/0322485 BIDIRECTIONAL HEMT AND AN ELECTRONIC PACKAGE INCLUDING THE BIDIRECTIONAL HEMT
An electronic device can include a bidirectional HEMT. In an aspect, a packaged electronic device can include the bidirectional HEMT can be part of a die...
2016/0322484 Bidirectional Bipolar Transistor Structure with Field-Limiting Rings Formed by the Emitter Diffusion
A symmetrically-bidirectional power bipolar transistor having, on both surfaces of a semiconductor die, an n-type emitter/collector region which is completely...
2016/0322483 BIDIRECTIONAL INSULATED GATE BIPOLAR TRANSISTOR
A bidirectional IGBT device, including a cellular structure including: two MOS structures, a substrate drift layer, two highly doped buried layers operating...
2016/0322482 HETEROJUNCTION BIPOLAR TRANSISTOR
A heterojunction bipolar transistor, comprising an elongated base mesa, an "H" shaped emitter, two base electrodes, an elongated collector, and two elongated...
2016/0322481 APPLICATION OF SUPER LATTICE FILMS ON INSULATOR TO LATERAL BIPOLAR TRANSISTORS
A lateral bipolar junction transistor including a base region on a dielectric substrate layer. The base region includes a layered stack of alternating material...
2016/0322480 TUNNELING FIELD EFFECT TRANSISTORS (TFETS) FOR CMOS ARCHITECTURES AND APPROACHES TO FABRICATING N-TYPE AND...
Tunneling field effect transistors (TFETs) for CMOS architectures and approaches to fabricating N-type and P-type TFETs are described. For example, a tunneling...
2016/0322479 TUNNELING FIELD EFFECT TRANSISTOR (TFET) HAVING A SEMICONDUCTOR FIN STRUCTURE
A tunneling field effect transistor is formed from a fin of semiconductor material on a support substrate. The fin of semiconductor material includes a source...
2016/0322478 Methods Of Forming Transistor Gates
Some embodiments include methods of forming charge storage transistor gates and standard FET gates in Which common processing is utilized for fabrication of at...
2016/0322477 SEMICONDUCTOR DEVICE INCLUDING FIN-FET AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a first fin structure for a first fin field effect transistor (FET). The first fin structure includes a first base layer...
2016/0322476 METHOD OF MANUFACTURING A FIN FIELD EFFECT TRANSISTOR
A method of manufacturing a fin field effect transistor is provided. A double spacer protective layer comprising an outer spacer (the first spacer) and an...
2016/0322475 ANNEALED METAL SOURCE DRAIN UNDER GATE
A method of forming a field effect transistor is provided. The method of forming a field effect transistor may include forming a dummy gate perpendicular to...
2016/0322474 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A semiconductor structure includes a semiconductor substrate, n-type source and drain stressors, and a gate stack. The semiconductor substrate has source and...
2016/0322473 Buffer Layer on Gate and Methods of Forming the Same
Buffer layers on gates and methods of forming such are described. According to a method embodiment, a gate structure is formed. The gate structure includes a...
2016/0322472 Producing a Semiconductor Device by Epitaxial Growth
A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing,...
2016/0322471 Metal Gate Scheme for Device and Methods of Forming
Gate structures and methods of forming the gate structures are described. In some embodiments, a method includes forming source/drain regions in a substrate,...
2016/0322470 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
Disclosed herein is a thin film transistor array panel, including: an insulating substrate; a gate electrode formed on the insulating substrate; a gate...
2016/0322469 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK
This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a...
2016/0322468 SEMICONDUCTOR DEVICE
A semiconductor device is disclosed. The semiconductor device includes: a substrate; a gate structure on the substrate; an interlayer dielectric (ILD) around...
2016/0322467 SCHOTTKY BARRIER DIODE
A semiconductor device, includes an n-type semiconductor layer provided with a first semiconductor layer with a low electron carrier concentration and a second...
2016/0322466 Lateral/Vertical Semiconductor Device
A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a...
2016/0322465 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A method for manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first heating step...
2016/0322464 Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device
A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a...
2016/0322463 Body-Tied, Strained-Channel Multi-Gate Device and Methods
A fin-FET or other multi-gate transistor is disclosed. The transistor comprises a semiconductor substrate having a first lattice constant, and a semiconductor...
2016/0322462 TILT IMPLANTATION FOR STI FORMATION IN FINFET STRUCTURES
Techniques in fabricating a fin field-effect transistor (FinFET) include providing a substrate having a fin structure and forming an isolation region having a...
2016/0322461 Method for Producing Fin Structures of a Semiconductor Device in a Substrate
A method for producing fin structures, using Directed Self Assembly (DSA) lithographic patterning, in an area of a semiconductor substrate includes providing a...
2016/0322460 Staggered-type Tunneling Field Effect Transistor
The disclosure describes a tunneling field effect transistor having an overlapping structure between the source and drain regions providing a greater tunneling...
2016/0322459 NANO-TUBE MOSFET TECHNOLOGY AND DEVICES
This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of trenches. Each...
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