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Patent # Description
2016/0322258 PERFORMANCE OPTIMIZED GATE STRUCTURES
A performance optimized CMOS FET structure and methods of manufacture are disclosed. The method includes forming source and drain regions for a first type...
2016/0322257 BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD FOR MANUFACTURING THE SAME
A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation...
2016/0322256 Technique that Patterns Both Sides of a Thin Wafer to Fabricate Bi-Directional Devices
Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by...
2016/0322255 METHOD FOR DEPOSITING A DIFFUSION BARRIER LAYER AND A METAL CONDUCTIVE LAYER
We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto...
2016/0322254 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced...
2016/0322253 Substrate Carrier For Solar Cells
A substrate carrier for solar cells, utilized in a wet etching process, comprising: two side plates; at least a side rod, connected respectively to an outer...
2016/0322252 REAR SURFACE-PROTECTIVE FILM FOR PROTECTING REAR SURFACE OF SEMICONDUCTOR ELEMENT, INTEGRATED FILM, FILM,...
Disclosed is a rear surface-protective film making it possible to watch, across this rear surface-protective film, a crack of a semiconductor element through...
2016/0322251 FILM FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
The film for a semiconductor device has a plurality of films with attached dicing tape for the backside of a flip-chip type semiconductor arranged on a...
2016/0322250 Wafer Releasing
Embodiments of the present invention provide a chuck system for handling a wafer that comprises a first and a second main surface. The chuck system includes a...
2016/0322249 DEVICE FOR ALIGNMENT OF TWO SUBSTRATES
Device and method for alignment of a first contact surface of a first substrate with a second contact surface of a second substrate which can be held on a...
2016/0322248 SUBSTRATE POSITION ALIGNMENT DEVICE AND CONTROL METHOD OF SUBSTRATE POSITION ALIGNMENT DEVICE
A substrate position alignment device includes a plurality of rotary tables which hold a plurality of substrates to be vertically spaced apart from each other,...
2016/0322247 END EFFECTOR AND SUBSTRATE CONVEYING ROBOT
An end effector has a plurality of blade bodies and a substrate holding unit on a blade proximal end side of each of the blade bodies. The substrate holding...
2016/0322246 END EFFECTOR DEVICE
An end effector device is provided with a hand; a plurality of holding portions that are provided to the hand, and that hold a plurality of semiconductor...
2016/0322245 WORKPIECE TRANSFER SYSTEM
The present application provides a workpiece transfer system in which a production efficiency of a production line to be used can be improved. For example, a...
2016/0322244 WAFER ROTATING APPARATUS
A wafer rotating apparatus includes a base, a carrying device, a first shaft gear, a power unit, a roller, a second shaft gear and a driving assembly. The base...
2016/0322243 CHAMBER
Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a...
2016/0322242 METHOD AND APPARATUS FOR CONTROLLING PLASMA NEAR THE EDGE OF A SUBSTRATE
Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber...
2016/0322241 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
The substrate processing unit 1 comprises the rotating table 31 configured to hold substrate W, the processing chamber 37 which accommodates the rotating table...
2016/0322240 SEMICONDUCTOR APPARATUS AND WASHING METHOD
A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor...
2016/0322239 Methods and Apparatus for Cleaning a Substrate
Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus...
2016/0322238 METHOD OF FORMING A MOLDING LAYER FOR SEMICONDUCTOR PACKAGE
A method of forming a molding layer includes the following operations: forming a substrate having at least one column structure thereon; flipping over the...
2016/0322237 METHOD FOR FABRICATING AN ADVANCED ROUTABLE QUAD FLAT NO-LEAD PACKAGE
An improved leadframe assembly for use in a quad flat no lead (QFN) package is described along with a method of fabricating both the leadframe assembly and the...
2016/0322236 SELECTIVE METAL/METAL OXIDE ETCH PROCESS
The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate...
2016/0322235 METHOD FOR FABRICATING SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN LAYERS
Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the...
2016/0322234 METHODS AND APPARATUS FOR CORRECTING SUBSTRATE DEFORMITY
Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a...
2016/0322233 SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME
This method for manufacturing a silicon wafer includes: a first heat treatment step of performing RTP treatment on the silicon wafer in an oxidizing...
2016/0322232 USE OF NON-OXIDIZING STRONG ACIDS FOR THE REMOVAL OF ION-IMPLANTED RESIST
A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively...
2016/0322231 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on...
2016/0322230 ETCHING METHOD AND ETCHING APPARATUS
A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF.sub.3 gas, and O.sub.2 gas into a chamber and performing a plurality...
2016/0322229 METHODS FOR SELECTIVE DEPOSITION OF METAL SILICIDES VIA ATOMIC LAYER DEPOSITION CYCLES
Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer...
2016/0322228 STRUCTURE AND METHOD TO FORM III-V, Ge AND SiGe FINS ON INSULATOR
A method provides a first substrate supporting an insulator layer having trenches formed therein; filling the trenches using an epitaxial growth process with...
2016/0322227 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a silicon carbide semiconductor device having a trench type MOS gate structure, the present invention makes it possible to inhibit the operating...
2016/0322226 Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for Aspect Ratio Trapping
The present invention provides ART techniques with reduced LER. In one aspect, a method of ART with reduced LER is provided which includes the steps of:...
2016/0322225 SEED LAYER STRUCTURE FOR GROWTH OF III-V MATERIALS ON SILICON
The present disclosure relates to a structure and method of forming a GaN film on a Si substrate that includes an additional or second high temperature (HT)...
2016/0322224 PROCESSES FOR USING FLUX AGENTS TO FORM POLYCRYSTALLINE GROUP III-GROUP V COMPOUNDS FROM SINGLE SOURCE...
The present invention provides methods for using single source organometallic precursors in the fabrication of polycrystalline Group III-Group V compounds,...
2016/0322223 PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION
A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V...
2016/0322222 PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION
A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V...
2016/0322221 Low Defect Relaxed SiGe/Strained Si Structures on Implant Anneal Buffer/Strain Relaxed Buffer Layers with...
A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit...
2016/0322220 LOW DEFECT RELAXED SiGe/STRAINED Si STRUCTURES ON IMPLANT ANNEAL BUFFER/STRAIN RELAXED BUFFER LAYERS WITH...
A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit...
2016/0322219 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
A semiconductor substrate including plural types of semiconductor layers exposed at a surface thereof is provided. A semiconductor substrate includes: a...
2016/0322218 Film Forming Method and Film Forming Apparatus
A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of...
2016/0322217 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the...
2016/0322216 POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS
A polymer includes a first moiety represented by Chemical Formula 1, and a second moiety including a substituted or unsubstituted C6 to C60 cyclic group, a...
2016/0322215 INTER-ELECTRODE GAP VARIATION METHODS FOR COMPENSATING DEPOSITION NON-UNIFORMITY
Methods and systems for depositing material layers with gap variation between film deposition operations. One method includes depositing a material layer over...
2016/0322214 Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films
Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing...
2016/0322213 Selective Deposition Of Thin Film Dielectrics Using Surface Blocking Chemistry
Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface...
2016/0322212 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a...
2016/0322211 Method and System for Controlling Convective Flow in a Light-Sustained Plasma
A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell...
2016/0322210 GLOBALLY OPTIMIZED TARGETED MASS SPECTROMETRY (GOT-MS)
Globally Optimized Targeted (GOT)-MS, combines many of the advantages of targeted detection and global profiling in metabolomics analysis, including the...
2016/0322209 SYSTEM FOR TRANSFERRING IONS IN A MASS SPECTROMETER
A system for transporting ions includes: an ion transfer tube having an axis and an internal bore having a width and a height less than the width; and an...
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