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| Patent # | Description |
|---|---|
| 2016/0322258 |
PERFORMANCE OPTIMIZED GATE STRUCTURES A performance optimized CMOS FET structure and methods of manufacture are disclosed. The method includes forming source and drain regions for a first type... |
| 2016/0322257 |
BiMOS DEVICE WITH A FULLY SELF-ALIGNED EMITTER-SILICON AND METHOD FOR
MANUFACTURING THE SAME A method comprises providing a substrate of a first conductive type and a layer stack arranged on the substrate. The layer stack comprises a first isolation... |
| 2016/0322256 |
Technique that Patterns Both Sides of a Thin Wafer to Fabricate
Bi-Directional Devices Methods and systems for fabricating bidirectional devices on both surfaces of a semiconductor wafer. Separation of the second handle wafer is accomplished by... |
| 2016/0322255 |
METHOD FOR DEPOSITING A DIFFUSION BARRIER LAYER AND A METAL CONDUCTIVE
LAYER We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto... |
| 2016/0322254 |
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME A semiconductor device includes a substrate including a first region and a second region, first conductive patterns disposed on the first region and spaced... |
| 2016/0322253 |
Substrate Carrier For Solar Cells A substrate carrier for solar cells, utilized in a wet etching process, comprising: two side plates; at least a side rod, connected respectively to an outer... |
| 2016/0322252 |
REAR SURFACE-PROTECTIVE FILM FOR PROTECTING REAR SURFACE OF SEMICONDUCTOR
ELEMENT, INTEGRATED FILM, FILM,... Disclosed is a rear surface-protective film making it possible to watch, across this rear surface-protective film, a crack of a semiconductor element through... |
| 2016/0322251 |
FILM FOR SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR
DEVICE, AND SEMICONDUCTOR DEVICE The film for a semiconductor device has a plurality of films with attached dicing tape for the backside of a flip-chip type semiconductor arranged on a... |
| 2016/0322250 |
Wafer Releasing Embodiments of the present invention provide a chuck system for handling a wafer that comprises a first and a second main surface. The chuck system includes a... |
| 2016/0322249 |
DEVICE FOR ALIGNMENT OF TWO SUBSTRATES Device and method for alignment of a first contact surface of a first substrate with a second contact surface of a second substrate which can be held on a... |
| 2016/0322248 |
SUBSTRATE POSITION ALIGNMENT DEVICE AND CONTROL METHOD OF SUBSTRATE
POSITION ALIGNMENT DEVICE A substrate position alignment device includes a plurality of rotary tables which hold a plurality of substrates to be vertically spaced apart from each other,... |
| 2016/0322247 |
END EFFECTOR AND SUBSTRATE CONVEYING ROBOT An end effector has a plurality of blade bodies and a substrate holding unit on a blade proximal end side of each of the blade bodies. The substrate holding... |
| 2016/0322246 |
END EFFECTOR DEVICE An end effector device is provided with a hand; a plurality of holding portions that are provided to the hand, and that hold a plurality of semiconductor... |
| 2016/0322245 |
WORKPIECE TRANSFER SYSTEM The present application provides a workpiece transfer system in which a production efficiency of a production line to be used can be improved. For example, a... |
| 2016/0322244 |
WAFER ROTATING APPARATUS A wafer rotating apparatus includes a base, a carrying device, a first shaft gear, a power unit, a roller, a second shaft gear and a driving assembly. The base... |
| 2016/0322243 |
CHAMBER Embodiments of the invention provide a chamber for semiconductor processing, which includes a chamber body and an isolation window, the chamber body being of a... |
| 2016/0322242 |
METHOD AND APPARATUS FOR CONTROLLING PLASMA NEAR THE EDGE OF A SUBSTRATE Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for processing a substrate includes a process chamber... |
| 2016/0322241 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD The substrate processing unit 1 comprises the rotating table 31 configured to hold substrate W, the processing chamber 37 which accommodates the rotating table... |
| 2016/0322240 |
SEMICONDUCTOR APPARATUS AND WASHING METHOD A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer carrier, and a cup surrounding the wafer carrier. The semiconductor... |
| 2016/0322239 |
Methods and Apparatus for Cleaning a Substrate Embodiments of methods and apparatus for cleaning contaminants from a substrate are disclosed herein. In some embodiments, a substrate cleaning apparatus... |
| 2016/0322238 |
METHOD OF FORMING A MOLDING LAYER FOR SEMICONDUCTOR PACKAGE A method of forming a molding layer includes the following operations: forming a substrate having at least one column structure thereon; flipping over the... |
| 2016/0322237 |
METHOD FOR FABRICATING AN ADVANCED ROUTABLE QUAD FLAT NO-LEAD PACKAGE An improved leadframe assembly for use in a quad flat no lead (QFN) package is described along with a method of fabricating both the leadframe assembly and the... |
| 2016/0322236 |
SELECTIVE METAL/METAL OXIDE ETCH PROCESS The present invention provides a process for selectively etching molybdenum or titanium relative to a oxide semiconductor film, including providing a substrate... |
| 2016/0322235 |
METHOD FOR FABRICATING SPECIFIC TERMINATION ANGLES IN TITANIUM TUNGSTEN
LAYERS Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the... |
| 2016/0322234 |
METHODS AND APPARATUS FOR CORRECTING SUBSTRATE DEFORMITY Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a... |
| 2016/0322233 |
SILICON WAFER AND METHOD FOR MANUFACTURING THE SAME This method for manufacturing a silicon wafer includes: a first heat treatment step of performing RTP treatment on the silicon wafer in an oxidizing... |
| 2016/0322232 |
USE OF NON-OXIDIZING STRONG ACIDS FOR THE REMOVAL OF ION-IMPLANTED RESIST A method and composition for removing bulk and/or ion-implanted resist material from microelectronic devices have been developed. The compositions effectively... |
| 2016/0322231 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming, on a substrate, protruding portions with first films on... |
| 2016/0322230 |
ETCHING METHOD AND ETCHING APPARATUS A method for etching a silicon film formed on a substrate includes supplying HBr gas, NF.sub.3 gas, and O.sub.2 gas into a chamber and performing a plurality... |
| 2016/0322229 |
METHODS FOR SELECTIVE DEPOSITION OF METAL SILICIDES VIA ATOMIC LAYER
DEPOSITION CYCLES Methods for selectively depositing a metal silicide layer are provided herein. In some embodiments, a method of selectively depositing a metal silicide layer... |
| 2016/0322228 |
STRUCTURE AND METHOD TO FORM III-V, Ge AND SiGe FINS ON INSULATOR A method provides a first substrate supporting an insulator layer having trenches formed therein; filling the trenches using an epitaxial growth process with... |
| 2016/0322227 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF In a silicon carbide semiconductor device having a trench type MOS gate structure, the present invention makes it possible to inhibit the operating... |
| 2016/0322226 |
Techniques for Fabricating Reduced-Line-Edge-Roughness Trenches for Aspect
Ratio Trapping The present invention provides ART techniques with reduced LER. In one aspect, a method of ART with reduced LER is provided which includes the steps of:... |
| 2016/0322225 |
SEED LAYER STRUCTURE FOR GROWTH OF III-V MATERIALS ON SILICON The present disclosure relates to a structure and method of forming a GaN film on a Si substrate that includes an additional or second high temperature (HT)... |
| 2016/0322224 |
PROCESSES FOR USING FLUX AGENTS TO FORM POLYCRYSTALLINE GROUP III-GROUP V
COMPOUNDS FROM SINGLE SOURCE... The present invention provides methods for using single source organometallic precursors in the fabrication of polycrystalline Group III-Group V compounds,... |
| 2016/0322223 |
PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V... |
| 2016/0322222 |
PREPARATION OF LOW DEFECT DENSITY OF III-V ON SI FOR DEVICE FABRICATION A method of forming a semiconducting material includes depositing a graded buffer on a substrate to form a graded layer of an indium (In) containing III-V... |
| 2016/0322221 |
Low Defect Relaxed SiGe/Strained Si Structures on Implant Anneal
Buffer/Strain Relaxed Buffer Layers with... A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit... |
| 2016/0322220 |
LOW DEFECT RELAXED SiGe/STRAINED Si STRUCTURES ON IMPLANT ANNEAL
BUFFER/STRAIN RELAXED BUFFER LAYERS WITH... A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit... |
| 2016/0322219 |
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR
SUBSTRATE A semiconductor substrate including plural types of semiconductor layers exposed at a surface thereof is provided. A semiconductor substrate includes: a... |
| 2016/0322218 |
Film Forming Method and Film Forming Apparatus A film forming method for forming a nitride film on a workpiece substrate accommodated within a process vessel, including: performing a first reaction of... |
| 2016/0322217 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A substrate processing apparatus including: a reaction tube configured to process a plurality of substrates; a heater configured to heat an inside of the... |
| 2016/0322216 |
POLYMER, ORGANIC LAYER COMPOSITION, AND METHOD OF FORMING PATTERNS A polymer includes a first moiety represented by Chemical Formula 1, and a second moiety including a substituted or unsubstituted C6 to C60 cyclic group, a... |
| 2016/0322215 |
INTER-ELECTRODE GAP VARIATION METHODS FOR COMPENSATING DEPOSITION
NON-UNIFORMITY Methods and systems for depositing material layers with gap variation between film deposition operations. One method includes depositing a material layer over... |
| 2016/0322214 |
Methods For Depositing Low K And Low Wet Etch Rate Dielectric Thin Films Methods for the formation of SiCN, SiCO and SiCON films comprising cyclical exposure of a substrate surface to a silicon-containing gas, a carbon-containing... |
| 2016/0322213 |
Selective Deposition Of Thin Film Dielectrics Using Surface Blocking
Chemistry Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface. Methods include soaking a substrate surface... |
| 2016/0322212 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING
APPARATUS, AND RECORDING MEDIUM A film where a first layer and a second layer are laminated is formed on a substrate by performing: forming the first layer by performing a first cycle a... |
| 2016/0322211 |
Method and System for Controlling Convective Flow in a Light-Sustained
Plasma A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell... |
| 2016/0322210 |
GLOBALLY OPTIMIZED TARGETED MASS SPECTROMETRY (GOT-MS) Globally Optimized Targeted (GOT)-MS, combines many of the advantages of targeted detection and global profiling in metabolomics analysis, including the... |
| 2016/0322209 |
SYSTEM FOR TRANSFERRING IONS IN A MASS SPECTROMETER A system for transporting ions includes: an ion transfer tube having an axis and an internal bore having a width and a height less than the width; and an... |
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