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Patent # Description
2016/0329247 SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME
A method of forming a semiconductor package includes depositing a passivation layer overlying a semiconductor substrate, wherein the semiconductor substrate...
2016/0329246 LASER WORKING METHOD, LASER WORKING APPARATUS, AND ITS MANUFACTURING METHOD
An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the...
2016/0329245 SEMICONDUCTOR COMPONENT HAVING THROUGH-SILICON VIAS AND METHOD OF MANUFACTURE
A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the...
2016/0329244 Stacked Electronic Device and Method for Fabricating the Same
A method for fabricating a stacked electronic device is provided. A first three-dimensional (3D) printing is performed to form a first insulating layer and a...
2016/0329243 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Provided is a method of fabricating a semiconductor device including the following steps. A substrate is provided. A material layer having an opening is formed...
2016/0329242 METHODS OF FORMING WIRING STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES
In a method of forming a wiring structure, an insulating interlayer is formed on a substrate. The insulating interlayer includes an opening and has pores...
2016/0329241 INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FORMING THE SAME
An integrated circuits structure includes a semiconductor substrate, at least an non-planar field effect transistor (FET) device formed on the semiconductor...
2016/0329240 Via Definition Scheme
A method includes defining a metal pattern layer over a first dielectric layer. The first dielectric layer is disposed over an etch stop layer and the etch...
2016/0329239 SOI SUBSTRATE MANUFACTURING METHOD AND SOI SUBSTRATE
An SOI substrate manufacturing method and an SOI substrate are provided, where the method includes: forming a patterned etch-stop layer in an oxide layer of a...
2016/0329238 INHIBITOR PLASMA MEDIATED ATOMIC LAYER DEPOSITION FOR SEAMLESS FEATURE FILL
Systems and methods for depositing film in a substrate processing system includes performing a first atomic layer deposition (ALD) cycle in a processing...
2016/0329237 Interconnect Structure and Method of Forming the Same
An interconnect structure and a method of forming an interconnect structure are disclosed. The interconnect structure includes a lower etch stop layer (ESL);...
2016/0329236 Semiconductor Structures and Methods of Manufacturing the Same
A semiconductor device and methods of forming a semiconductor device are disclosed. In the methods, a layer, such as an insulating interlayer, is formed on a...
2016/0329235 DEVICE AND METHOD FOR LOOSENING A FIRST SUBSTRATE
A device for detaching a first substrate from a second substrate in a detaching direction (L) with: at least two elements guided crosswise to the detaching...
2016/0329234 SUBSTRATE PROCESSING APPARATUS
A transfer apparatus for transporting substrates in a transfer chamber having a first and second ends and two sides extending between the ends. The transfer...
2016/0329233 Double Layer Release Temporary Bond and Debond Processes and Systems
A bonded structure contains a substrate containing at least one feature, the substrate having a top surface; a first release layer overlying the top surface of...
2016/0329232 COMPLIANT BIPOLAR MICRO DEVICE TRANSFER HEAD WITH SILICON ELECTRODES
A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described....
2016/0329231 TUNABLE TEMPERATURE CONTROLLED SUBSTRATE SUPPORT ASSEMBLY
Implementations described herein provide a substrate support assembly which enables both lateral and azimuthal tuning of the heat transfer between an...
2016/0329230 METHODS AND APPARATUS FOR ELECTROSTATIC CHUCK REPAIR AND REFURBISHMENT
In one embodiment of the invention, a substrate support assembly comprises an electrostatic chuck having an electrode embedded therein and having an aperture...
2016/0329229 Silicon Wafer Pre-alignment Device and Method Therefor
A wafer pre-alignment device is disclosed, including a first unit configured to drive a wafer to rotate or move upward or downward, a second unit configured to...
2016/0329228 CASSETTE POSITIONING DEVICE AND SEMICONDUCTOR PROCESSING APPARATUS
The present invention provides a cassette positioning device and a semiconductor processing apparatus. The cassette positioning device includes: a positioning...
2016/0329227 END EFFECTOR AND SUBSTRATE CONVEYING ROBOT
An end effector has a hand base portion at least a part of which advances below a lowermost substrate or above an uppermost substrate of a plurality of...
2016/0329226 Transfer Apparatus and Control Method Thereof
A transfer apparatus that includes a moving unit capable of moving with respect to a base and transferring an article with the moving unit protruding from the...
2016/0329225 Flexible Purge Management System
The subject matter of this invention is a device for flexible purge management, comprising a FOUP transport system, a purging gas distribution system, one or...
2016/0329224 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A technique to prevent reduction in throughput of a substrate processing apparatus. On the occurrence of an event disabling execution of a recipe by a...
2016/0329223 LIGHT IRRADIATION APPARATUS
A light irradiation apparatus that can uniformly treat the entire to-be-treated surface of a to-be-treated subject having a light irradiation apparatus...
2016/0329222 RESIST HARDENING AND DEVELOPMENT PROCESSES FOR SEMICONDUCTOR DEVICE MANUFACTURING
In some embodiments, a method of forming an etch mask on a substrate is provided that includes (1) forming a resist layer on a substrate; (2) exposing one or...
2016/0329221 ISOTROPIC ATOMIC LAYER ETCH FOR SILICON OXIDES USING NO ACTIVATION
Methods for controlled isotropic etching of layers of silicon oxide and germanium oxide with atomic scale fidelity are provided. The methods make use of NO...
2016/0329220 SUBSTRATE PROCESSING APPARATUS
In a substrate processing apparatus, a chamber bottom has a plurality of large chamber exhaust ports arranged in a circumferential direction. A cup rotation...
2016/0329219 SUBSTRATE CLEANING APPARATUS
Provided is a substrate cleaning apparatus including: a cleaning bath configured to accommodate a substrate having a first surface and a second surface; a...
2016/0329218 SELECTIVE AREA HEATING FOR 3D CHIP STACK
A method of forming a 3D package. The method may include joining an interposer to a laminate chip carrier with the solid state diffusion of a first plurality...
2016/0329217 ETCHING LIQUID FOR OXIDE CONTAINING ZINC AND TIN, AND ETCHING METHOD
The present invention provides an etching liquid which has a suitable etching rate for etching of an oxide containing zinc and tin and is suppressed in change...
2016/0329216 HEAT-TREATMENT FURNACE
The disclosed heat-treatment furnace, used in a semiconductor-substrate heat-treatment step, is characterized by the provision of a cylindrical core, both ends...
2016/0329215 CHEMICAL MECHANICAL POLISHING METHOD USING SLURRY COMPOSITION CONTAINING N-OXIDE COMPOUND
The present disclosure relates to a method of performing a chemical mechanical planarization (CMP) process with a high germanium-to-oxide removal selectivity...
2016/0329214 NON-LITHOGRAPHIC LINE PATTERN FORMATION
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric ...
2016/0329213 HIGHLY SELECTIVE DEPOSITION OF AMORPHOUS CARBON AS A METAL DIFFUSION BARRIER LAYER
A method for providing a metal diffusion barrier layer comprising providing a substrate including a metal layer; depositing a dielectric layer on the metal...
2016/0329212 METHODS AND SYSTEMS FOR DOPANT ACTIVATION USING MICROWAVE RADIATION
A semiconductor structure includes a substrate, a source/drain (S/D) junction, and an S/D contact. The S/D junction is associated with the substrate and...
2016/0329211 SELECTIVE DOPANT JUNCTION FOR A GROUP III-V SEMICONDUCTOR DEVICE
An approach to providing a method of forming a dopant junction in a semiconductor device. The approach includes performing a surface modification treatment on...
2016/0329210 METHOD FOR IMPROVING CD MICRO-LOADING IN PHOTOMASK PLASMA ETCHING
Embodiments of the present invention provides methods to etching a mask layer, e.g., an absorber layer, disposed in a film stack for manufacturing a photomask...
2016/0329209 OXIDE SEMICONDUCTOR FILM
An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (0) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a...
2016/0329208 SUBSTRATE PROCESSING APPARATUS FOR FORMING FILM INCLUDING AT LEAST TWO DIFFERENT ELEMENTS
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
2016/0329207 Method for Processing Photoresist Materials and Structures
Techniques herein include methods of processing photoresist patterns and photoresist materials for successful use in multi-patterning operations. Techniques...
2016/0329206 METHODS OF MODULATING RESIDUAL STRESS IN THIN FILMS
Disclosed are methods of forming reduced-stress dielectric films on semiconductor substrates which include depositing a first reduced-stress bilayer by...
2016/0329205 Lamp
In various embodiments, a lamp is provided. The lamp includes a lamp vessel, and a sleeve which surrounds the lamp vessel. A fastening element is provided for...
2016/0329204 Method and Apparatus for Injection of Ions into an Electrostatic Ion Trap
A method of injecting ions into an electrostatic trap, comprising: generating ions in an ion source; transporting the ions from the ion source to an ion store...
2016/0329203 MASS SPECTROMETER AND MASS SPECTROMETRY METHOD
A mass spectrometer including an ionization source including an ESI probe (201), an ESI power source (24), a corona needle (202) and an APCI power source (24);...
2016/0329202 SYSTEMS AND METHODS FOR BUBBLE BASED ION SOURCES
The present disclosure describes embodiments directed to a bubble based ion source system comprising an ion source configured to generate a plurality of ions,...
2016/0329201 HOMOGENIZATION OF THE PULSED ELECTRIC FIELD CREATED IN A RING STACK ION ACCELERATOR
A ring stacked accelerator for use in a mass spectrometer includes a plurality of ring shaped plates arranged in a stack and is electrically coupled to a...
2016/0329200 Storage Ring For Fast Processes
An ion storage device is provided which is arranged and adapted: (i) to receive first ions which have been temporally separated according to a first...
2016/0329199 PREPARATION ENHANCEMENTS AND METHODS OF USE FOR MALDI MASS SPECTROMETRY
Provided herein are compositions and methods useful for preparing and analyzing a sample on a substrate by matrix assisted laser desorption ionization (MALDI)...
2016/0329198 METHOD AND APPARATUS FOR CONTAINED-ELECTROSPRAY FOR USE IN MASS SPECTROMETRY AND DROPLET REACTIONS
Provided herein are apparatuses that can comprise an electrospray emitter comprising a sample capillary extending from a sample inlet to a sample outlet and an...
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