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Patent # Description
2016/0336404 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor substrate, a base region formed in the semiconductor substrate on a front surface side thereof, a gate trench...
2016/0336403 SEMICONDUCTOR DEVICE
A semiconductor device that includes a plurality of trench gate structures each having a gate electrode extending in a depth direction of an element, the...
2016/0336402 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a plurality of trench gates provided abreast in a semiconductor substrate; an interlayer insulation film having opening from...
2016/0336401 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
The present invention provides some methods for forming at least two different nanowire structures with different diameters on one substrate. Since the...
2016/0336400 SEMICONDUCTOR DEVICE
A semiconductor device includes a fin-shaped semiconductor layer on a surface of a semiconductor substrate having a longitudinal axis extending in a first...
2016/0336399 GATE CONTACT STRUCTURE HAVING GATE CONTACT LAYER
There is set forth herein a gate contact structure for a gate. The gate contact structure can include a first contact layer and a second contact layer. In one...
2016/0336398 Method for Forming FinFET Devices
An apparatus comprises a first semiconductor fin, a second semiconductor fin and a third semiconductor fin over a substrate, wherein the first semiconductor...
2016/0336397 NONVOLATILE MEMORY CELL WITH IMPROVED ISOLATION STRUCTURES
A method for forming a non-volatile memory cell is provided. The method comprises: forming a field region with a first impurity type in a semiconductor...
2016/0336396 Processing a Semiconductor Wafer
A semiconductor wafer processing system for processing a semiconductor wafer is presented. The semiconductor wafer processing system comprises: a trench...
2016/0336395 REDUCTION OF DEFECT INDUCED LEAKAGE IN III-V SEMICONDUCTOR DEVICES
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10.sup.8...
2016/0336394 NEW DUAL-GATE TRENCH IGBT WITH BURIED FLOATING P-TYPE SHIELD
A method of manufacturing an insulated gate bipolar transistor (IGBT) device comprising 1) preparing a semiconductor substrate with an epitaxial layer of a...
2016/0336393 POWER SEMICONDUCTOR DEVICE
The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown...
2016/0336392 SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A silicon carbide semiconductor device capable of achieving a decrease in ON resistance and an increase in breakdown voltage and a method for manufacturing a...
2016/0336391 SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device includes: a drift layer of a first conductivity type made of silicon carbide; a well region of a second conductivity...
2016/0336390 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
An IGBT includes an emitter electrode, base regions, an emitter region, a collector region, a collector electrode, a gate insulating film provided in contact...
2016/0336389 Transistor with Wurtzite Channel
A device includes a source region, a drain region, and a wurtzite semiconductor between the source region and the drain region. A source-drain direction is...
2016/0336388 METHOD FOR FORMING Ti/TiN STACKED FILM AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A semiconductor device is improved in reliability and productivity. In the formation of its Ti/TiN stacked film, about a mixed gas of Ar gas and N.sub.2 gas...
2016/0336387 HIGH RESISTIVITY SOFT MAGNETIC MATERIAL FOR MINIATURIZED POWER CONVERTER
An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total...
2016/0336386 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR SUBSTRATE
A TFT substrate has a thin-film transistor including an oxide semiconductor layer, a source electrode, and a drain electrode, and includes: a first wiring line...
2016/0336385 AMOLED BACKPLANE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides an AMOLED backplane structure and a manufacturing method thereof. In each sub-pixel, a TFT substrate (TS) includes a corrugation...
2016/0336384 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR REPAIRING ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode (OLED) display includes a light-emitting region including an organic emission layer and a non-light-emitting region neighboring...
2016/0336383 DISPLAY APPARATUS MANUFACTURING METHOD AND DISPLAY APPARATUS
A display apparatus manufacturing method, including: forming a first electrode layer over a substrate; forming a planarization film over the first electrode...
2016/0336382 ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display panel and associated methods, the panel including a substrate; an organic light emitting diode (OLED) on the substrate; and...
2016/0336381 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes: a first organic light emitting element configured to emit light having a first wavelength; and a second...
2016/0336380 Display Device and Method for Manufacturing Display Device
The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced....
2016/0336379 ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY AND METHOD OF MANUFACTURING THE SAME
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes an OLED comprising a plurality of pixels configured to...
2016/0336378 SWITCH DEVICE AND STORAGE UNIT
A switch device includes: a first electrode; a second electrode disposed to oppose the first electrode; a switch layer provided between the first electrode and...
2016/0336377 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a semiconductor substrate and a first pillar-shaped...
2016/0336376 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING VERTICAL CHANNEL AND METHOD OF MANUFACTURING THE SAME
A semiconductor integrated circuit device having a vertical channel and a method of manufacturing the same are provided. A plurality of active lines are formed...
2016/0336375 DIOMEJ CELL DEVICES
Embodiments of the technology implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a...
2016/0336374 DISPLAY SUBSTRATE, ITS MANUFACTURING METHOD AND DISPLAY DEVICE
The present disclosure provides a display substrate, its manufacturing method, and a display device. The method includes a step of forming a plurality of TFTs....
2016/0336373 X-RAY FLAT PANEL DETECTOR AND X-RAY DIGITAL RADIOGRAPHY SYSTEM
The present disclosure provides an X-ray flat panel detector including: a base substrate; thin film transistors (TFTs), a pixel electrode layer, photodiodes, a...
2016/0336372 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC DEVICE
The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can...
2016/0336371 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state imaging device that can reduce crosstalk interference, and to an electronic apparatus. In the upper chip, VSLs,...
2016/0336370 FOCAL PLANE ARRAYS WITH BACKSIDE CONTACTS
A package assembly includes a package body and a focal plane array (FPA) within the package body. The FPA includes a read out integrated circuit (ROIC) having...
2016/0336369 SOLID-STATE IMAGING DEVICE AND METHOD OF MANUFACTURING THE SAME
A solid-state imaging device has a first area in which a plurality of pixels are provided, a second area provided on an outer side with respect to the first...
2016/0336368 RECEIVER OPTICAL MODULE
There is provided a receiver optical module including a photodetector having a plurality of channels, a capacitor disposing block formed on an upper portion of...
2016/0336367 Backside Structure and Methods for BSI Image Sensors
A back side image sensor and method of manufacture are provided. In an embodiment a bottom anti-reflective coating is formed over a substrate, and a metal...
2016/0336366 LIGHT-RECEIVING DEVICE AND MANUFACTURING METHOD THEREOF
A light-receiving device which has high reliability and high sensitivity is provided with low cost. The device has a laminate type device structure in which a...
2016/0336365 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a carrier substrate, a first color filter, a first photodetector, and a light enhancement structure. The first photodetector is...
2016/0336364 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device includes a layout in which one sharing unit includes an array of photodiodes of 2 pixels by 4.times.n pixels (where, n is a...
2016/0336363 PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE
A photoelectric conversion element includes a first electrode, a second electrode, a first layer, and a second layer. The first layer is provided between the...
2016/0336362 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
An image sensor includes: a first inter-layer dielectric layer formed over a front side of a substrate including photoelectric conversion regions; isolation...
2016/0336361 PHOTODETECTOR
There is provided a photodetector, comprising a semiconductor heterostructure having in sequence: a first collection layer having substantially uniform doping...
2016/0336360 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
A method of manufacturing an array substrate is disclosed. A first conductive pattern, a first insulating layer, a second conductive pattern, and a second...
2016/0336359 THIN FILM TRANSISTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
Various embodiments provide a thin film transistor (TFT) device, a manufacturing method of the TFT device, and a display apparatus including the TFT device. An...
2016/0336358 MANUFACTURING METHOD AND APPARATUS OF LOW TEMPERATURE POLYCRYSTALLINE SILICON, AND POLYCRYSTALLINE SILICON
A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low...
2016/0336357 MANUFACTURING METHOD FOR ACTIVE MATRIX SUBSTRATE, ACTIVE MATRIX SUBSTRATE AND DISPLAY APPARATUS
Provided is a manufacturing method for an active matrix substrate, capable of providing a hole for alignment at an interlayer dielectric film without possible...
2016/0336356 DISPLAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE
The present disclosure provides a display substrate, a method for manufacturing the display substrate, and a display device. An intermediate layer is formed on...
2016/0336355 SEMICONDUCTOR DEVICE
To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device...
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