Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2016/0343883 SOLAR CELL HAVING DOPED SEMICONDUCTOR HETEROJUNCTION CONTACTS
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature...
2016/0343882 CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
A chip package includes a chip, an insulating layer, a flowing insulating material layer and conductive layer. The chip has a conductive pad, a side surface, a...
2016/0343881 SCHOTTKY DIODE HAVING FLOATING GUARD RINGS
The present examples relate to a Schottky diode having floating guard rings and an additional element isolation layer configured to further improve a breakdown...
2016/0343880 SEMICONDUCTOR DEVICE
A semiconductor device includes a fin-shaped silicon layer on a silicon substrate. A first insulating film is around the fin-shaped silicon layer and a...
2016/0343879 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a...
2016/0343878 Thin Film Transistor Substrate Having High Reliability Metal Oxide Semiconductor Material
The present disclosure relates to a thin film transistor substrate having a high reliability oxide semiconductor material including a metal oxide semiconductor...
2016/0343877 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a...
2016/0343876 LOW TEMPERATURE POLY SILICON THIN FILM TRANSISTORS (LTPS TFTS) AND TFT SUBSTRATES
A LTPS TFT and a TFT substrate are disclosed. The LTPS TFT includes: a substrate; a first gate arranged on the substrate; a polysilicon layer arranged on the...
2016/0343875 Low temperature poly-silicon thin Film Transistor and Method for Manufacturing The Same
The embodiment of the disclosure provides a method for manufacturing a low temperature poly-silicon thin film transistor, comprising forming an interlayer...
2016/0343874 LOW TEMPERATURE POLY-SILICON THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The present invention provides a low temperature poly-silicon thin-film transistor, as well as a manufacturing method thereof, which includes: a substrate (1),...
2016/0343873 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The disclosure is related to a thin film transistor and a method of manufacturing the thin film transistor. The thin film transistor comprises a substrate, a...
2016/0343872 MANUFACTURE METHOD OF DUAL GATE OXIDE SEMICONDUCTOR TFT SUBSTRATE AND STRUCTURE THEREOF
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
2016/0343871 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate, and forming a...
2016/0343870 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device in which the threshold is adjusted is provided. In a transistor including a semiconductor, a source or drain electrode electrically...
2016/0343869 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device includes a substrate; a gate electrode provided on the substrate; a first insulating layer formed on the gate electrode; an ...
2016/0343868 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
The reliability of a transistor including an oxide semiconductor is improved. The transistor in a semiconductor device includes a first oxide semiconductor...
2016/0343867 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
A semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film over the first oxide semiconductor film, a source electrode...
2016/0343866 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE INCLUDING SEMICONDUCTOR DEVICE
The reliability of a transistor including an oxide semiconductor can be improved by suppressing a change in electrical characteristics. A transistor included...
2016/0343865 THIN FILM TRANSISTOR UTILIZED IN ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
A method for manufacturing a thin film transistor (TFT) which includes a gate, a gate insulation layer, a channel layer, an etching stopping layer, a source,...
2016/0343864 Thin-Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, and...
A thin-film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display apparatus are provided. The...
2016/0343863 OXIDE THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
The invention provides an oxide thin film transistor and a manufacturing method thereof. The manufacturing method includes sequentially forming a gate...
2016/0343862 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
2016/0343861 STRUCTURE AND PROCESS TO TUCK FIN TIPS SELF-ALIGNED TO GATES
A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure...
2016/0343860 SILICON-CONTAINING, TUNNELING FIELD-EFFECT TRANSISTOR INCLUDING III-N SOURCE
Tunneling field-effect transistors including silicon, germanium or silicon germanium channels and III-N source regions are provided for low power operations. A...
2016/0343859 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device and a method of fabricating the same are provided. The semiconductor device comprises a first multi-channel active pattern which is...
2016/0343858 SEMICONDUCTOR DEVICES HAVING MULTIPLE GATE STRUCTURES AND METHODS OF MANUFACTURING SUCH DEVICES
A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate...
2016/0343857 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A method of manufacturing a Fin FET includes forming a fin structure over a substrate. The fin structure includes an upper layer, and part of the upper layer...
2016/0343856 SALICIDE FORMATION ON REPLACEMENT METAL GATE FINFET DEVICES
A fin field effect transistor (finFET) device and a method of fabricating a finFET are described. The method includes forming a replacement gate stack on a...
2016/0343855 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Provided is a semiconductor device including a substrate, an insulating layer, a conductive layer and at least one spacer. The substrate has at least two...
2016/0343854 SEMICONDUCTOR DEVICE
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate. A first insulating film is around the fin-shaped semiconductor...
2016/0343853 EXTENDED DRAIN METAL-OXIDE-SEMICONDUCTOR TRANSISTOR
Devices and methods for forming a device are disclosed. A substrate is provided. A first body well of a second polarity type is formed in the substrate. A...
2016/0343852 HYBRID ACTIVE-FIELD GAP EXTENDED DRAIN MOS TRANSISTOR
An integrated circuit includes an extended drain MOS transistor with parallel alternating active gap drift regions and field gap drift regions. The extended...
2016/0343851 SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHODS OF FABRICATION THEREOF
A semiconductor device includes a semiconductor substrate having a first conductivity type. A gate structure is supported by a surface of the semiconductor...
2016/0343850 Vertical Transistor with Improved Robustness
A transistor is disclosed that includes a semiconductor body having a first horizontal surface. A drift region is arranged in the semiconductor body. A...
2016/0343849 Devices, Components and Methods Combining Trench Field Plates with Immobile Electrostatic Charge
N-channel power semiconductor devices in which an insulated field plate is coupled to the drift region, and immobile electrostatic charge is also present at...
2016/0343848 Transistor Arrangement Including Power Transistors and Voltage Limiting Means
A Transistor arrangement in a semiconductor body comprises a power transistor with at least two transistor cells, each transistor cell arranged in a...
2016/0343847 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a...
2016/0343846 (110) Surface Orientation for Reducing Fermi-Level-Pinning Between High-K Dielectric and Group Iii-V Compound...
A device with improved device performance, and method of manufacturing the same, are disclosed. An exemplary device includes a group III-V compound...
2016/0343845 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A fin structure including a well layer, an oxide layer over the well layer and a channel layer over the oxide layer is formed. An isolation insulating layer is...
2016/0343844 NON-PLANAR III-N TRANSISTOR
Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and...
2016/0343843 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes an electron transit layer configured to be formed on a substrate; an electron supply layer configured to be formed on the...
2016/0343842 METHOD OF GROWING AN EPITAXIAL SUBSTRATE AND FORMING A SEMICONDUCTOR DEVICE ON THE EPITAXIAL SUBSTRATE
A process of forming an epitaxial substrate for a high electron mobility transistor (HEMT) is disclosed. The process includes a sequential growth of a buffer...
2016/0343841 Hetero-Junction Semiconductor Device And Method of Manufacturing a Hetero-Junction Semiconductor Device
A hetero-junction semiconductor device includes: a channel layer that includes a first semiconductor; a barrier layer that is provided on the channel layer and...
2016/0343840 III-NITRIDE TRANSISTOR INCLUDING A P-TYPE DEPLETING LAYER
A transistor includes a III-N layer structure comprising a III-N channel layer between a III-N barrier layer and a p-type III-N layer. The transistor further...
2016/0343839 ELECTRONIC DEVICE
Provided is an electronic device including a semiconductor memory. The semiconductor memory includes first and second selecting elements coupled to a variable...
2016/0343838 Semiconductor Element Drive Apparatus and Power Conversion Apparatus Using Same
This semiconductor element drive apparatus switches an insulating gate at a positive voltage to at a negative voltage just before recovery when an anode...
2016/0343837 COMPOUND SEMICONDUCTOR DEVICE
A compound semiconductor device includes a heterojunction bipolar transistor and a bump. The heterojunction bipolar transistor includes a plurality of unit...
2016/0343836 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a transistor including an oxide semiconductor film, a metal oxide film for preventing electrification which is in contact with the oxide semiconductor film...
2016/0343835 METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR AND AN ARRAY SUBSTRATE, AND CORRESPONDING DEVICES
The present invention relates to a method for manufacturing a thin film transistor and an array substrate, and corresponding devices. In the thin film...
2016/0343834 METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR
A method for manufacturing a thin-film transistor includes: forming a first metal layer of a pattern including a gate on a substrate through pattern formation...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.