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Patent # Description
2016/0351749 Quantum Dot Light Enhancement Substrate and Lighting Device Including Same
A component including a substrate, at least one layer including a color conversion material comprising quantum dots disposed over the substrate, and a layer...
2016/0351748 METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE AND SUBSTRATE FOR SEMICONDUCTOR GROWTH
A method of manufacturing a semiconductor substrate may include: forming a buffer layer on a growth substrate; forming a plurality of openings in the buffer...
2016/0351747 NON-DESTRUCTIVE WAFER RECYCLING FOR EPITAXIAL LIFT-OFF THIN-FILM DEVICE USING A SUPERLATTICE EPITAXIAL LAYER
The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic...
2016/0351746 System and Method for Producing Modular Photovoltaic Panel Assemblies for Space Solar Arrays
An automated system provides automated manufacturing of photovoltaic standard power modules for utilization in a space solar array, in both rolled blanket and...
2016/0351745 HIGH QUANTUM EFFICIENCY PHOTODETECTOR
A photodetector including a photoelectric conversion structure made of a semiconductor material and, on a light-receiving surface of the conversion structure,...
2016/0351744 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate,...
2016/0351743 Avalanche Photodiode and Manufacturing Method Thereof
An avalanche photodiode includes a GeOI substrate; an I--Ge absorption layer configured to absorb an optical signal and generate a photo-generated carrier; a...
2016/0351742 SEMICONDUCTOR LAYERED STRUCTURE, METHOD FOR PRODUCING SEMICONDUCTOR LAYERED STRUCTURE, AND METHOD FOR PRODUCING...
A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate...
2016/0351741 High-Efficiency N-Type Bifacial Solar Cell
A high-efficiency N-type bifacial solar cell including: an N-type cell base including a structuralized surface; a P-type doped region formed on a front surface...
2016/0351740 SOLAR CELL MODULE AND SOLAR CELL DEVICE
A solar cell module includes a light-transmitting substrate and solar cell element groups. Each solar cell element group includes solar cell elements aligned...
2016/0351739 SEMICONDUCTOR DEVICES, A FLUID SENSOR AND A METHOD FOR FORMING A SEMICONDUCTOR DEVICE
A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a...
2016/0351738 GRAPHENE QUANTUM DOT PHOTODETECTOR AND MANUFACTURING METHOD THEREFOR
Provided is a graphene photodetector. The graphene photodetector comprises a first graphene, a graphene quantum dot (GQD) layer formed on the first graphene...
2016/0351737 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a...
2016/0351736 Iron Pyrite Nanocrystal Film As A Copper-Free Back Contact For Polycrystalline CdTe Thin Film Solar Cells
The invention discloses nanocrystalline (NC) FeS.sub.2 thin films as the back contact for CdTe solar cells. In one example, the FeS.sub.2 NC layer is prepared...
2016/0351735 HIGH VOLTAGE THIN FILM OPTICAL SWITCH
A thin film optical switch includes a layer of photosensitive material that extends laterally with first and second electrodes are spaced apart laterally from...
2016/0351734 DRY ETCH METHOD FOR TEXTURING SILICON AND DEVICE
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked...
2016/0351733 DRY ETCH METHOD FOR TEXTURING SILICON AND DEVICE
A method for texturing silicon includes loading a silicon wafer into a vacuum chamber, heating the silicon wafer and thermal cracking a gas to generate cracked...
2016/0351732 SEMICONDUCTOR PHOTODETECTOR
A photodetector for the detection of a light beam, comprising: a metal layer acting as a ground plane, a semiconductor layer covering the metal layer,...
2016/0351731 OPTICAL SENSOR DEVICE
The following configuration is adopted in order to provide a highly reliable optival sensor device which enhances the reliability of devices without making the...
2016/0351730 OPTICAL SENSOR DEVICE
A highly-reliable optical sensor device which is capable of accommodating size and thickness reductions in packages and which has stable and hardly changeable...
2016/0351729 ELECTRONIC DEVICE AND METHOD OF PRODUCING THE SAME
An electronic device includes a structure including a first resin layer, an electronic component buried in the first resin layer, a reflector element for...
2016/0351728 HIGHLY RESPONSIVE III-V PHOTODETECTORS USING ZnO:Al AS N-TYPE EMITTER
A photodiode includes a p-type ohmic contact and a p-type substrate in contact with the p-type ohmic contact. An intrinsic layer is formed over the substrate...
2016/0351727 MODULE FABRICATION OF SOLAR CELLS WITH LOW RESISTIVITY ELECTRODES
One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar...
2016/0351726 THIN FILM TRANSISTOR, ARRAY SUBSTRATE, THEIR MANUFACTURING METHODS, AND DISPLAY DEVICE
The present disclosure provides a TFT, an array substrate, their manufacturing methods, and a display device. A source electrode and a drain electrode of the...
2016/0351725 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
Embodiments of the present disclosure provide a thin film transistor (TFT) and a method of manufacturing the same, which enables to decrease the vertical...
2016/0351724 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, DISPLAY SUBSTRATE AND DISPLAY DEVICE
Embodiments of the invention disclose a thin-film transistor having a channel structure that has an increased width-length ratio and a manufacturing method...
2016/0351723 CO-PLANAR OXIDE SEMICONDUCTOR TFT SUBSTRATE STRUCTURE AND MANUFACTURE METHOD THEREOF
The present invention provides a co-planar oxide semiconductor TFT substrate structure and a manufacture method thereof. In the co-planar oxide semiconductor...
2016/0351722 Multiple Junction Thin Film Transistor
A multiple junction thin film transistor (TFT) is disclosed. The body of the TFT may have an n+ layer residing in a p- region of the body. The TFT may have an...
2016/0351721 SEMICONDUCTOR DEVICE
In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is...
2016/0351720 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF THE SAME, OR DISPLAY DEVICE INCLUDING THE SAME
To suppress a change in electrical characteristics and improve reliability in a transistor. The transistor includes a first gate electrode, a first insulating...
2016/0351719 THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING SAME
A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are...
2016/0351718 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
A method for manufacturing an electronic substrate includes providing a substrate and forming a buffer layer on the substrate. A connection pad is formed on...
2016/0351717 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A thin film transistor (TFT) includes a gate, a gate insulation layer, a channel, a source, and a drain. The gate is formed on a substrate. The gate insulation...
2016/0351716 NON-PLANAR TRANSISTORS AND METHODS OF FABRICATION THEREOF
The present description relates to the formation source/drain structures within non-planar transistors, wherein fin spacers are removed from the non-planar...
2016/0351715 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device is disclosed. The device includes a substrate including an active region defined by a device isolation layer, a fin pattern protruding...
2016/0351714 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF EVALUATING SEMICONDUCTOR DEVICE
A semiconductor device has: a silicon (semiconductor) substrate; a gate insulating film and a gate electrode, which are formed on the silicon substrate in this...
2016/0351713 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a...
2016/0351712 METHOD FOR INCREASING STRESS IN THE CHANNEL REGION OF FIN FIELD EFFECT TRANSISTOR
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a gate structure on the substrate;...
2016/0351711 SEMICONDUCTOR DEVICE HAVING AT LEAST ONE STRESSOR AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device includes forming a word line trench in an active region, forming a gate dielectric layer to cover at least a...
2016/0351710 Three Dimensional Monolithic LDMOS Transistor
A three dimensional monolithic LDMOS transistor implements a drain structure vertically disposed above a level of the structure that includes a drain...
2016/0351709 FIELD EFFECT TRANSISTOR WITH ELEVATED ACTIVE REGIONS AND METHODS OF MANUFACTURING THE SAME
A field effect transistor having a higher breakdown voltage can be provided by forming a contiguous dielectric material layer over gate stacks, forming via...
2016/0351708 SEMICONDUCTOR DEVICE
A semiconductor device includes a lateral transistor having: a semiconductor substrate including a drift layer; a first impurity layer in the drift layer; a...
2016/0351707 POWER INTEGRATED DEVICES, ELECTRONIC DEVICES INCLUDING THE SAME, AND ELECTRONIC SYSTEMS INCLUDING THE SAME
A power integrated device includes a semiconductor layer having first conductivity, a source region and a drain region each having second conductivity and...
2016/0351706 HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
In embodiments, a high voltage semiconductor device includes a gate structure disposed on a substrate, a source region disposed at a surface portion of the...
2016/0351705 SEMICONDUCTOR DEVICE CAPABLE OF HIGH-VOLTAGE OPERATION
A semiconductor device includes a semiconductor substrate and a first well region formed in the semiconductor substrate. An insulator is formed in and over a...
2016/0351704 NLDMOS DEVICE AND METHOD FOR MANUFACTURING THE SAME
An NLDMOS device that includes a drift region, a P well, and a first PTOP layer and a second PTOP layer formed on the drift region, wherein the first PTOP...
2016/0351703 P-CHANNEL POWER MOSFET
In characteristic test measurements of double-gate-in-trench p-channel power MOSFETs each having a p.sup.+ polysilicon gate electrode and a p.sup.+ field plate...
2016/0351702 SEMICONDUCTOR DEVICE
A control electrode GE1 is formed in a lower portion of a trench TR1 formed in a semiconductor substrate SUB, and a gate electrode GE2 is formed in an upper...
2016/0351701 HIGH MOBILITY STRAINED CHANNELS FOR FIN-BASED NMOS TRANSISTORS
Techniques are disclosed for incorporating high mobility strained channels into fin-based NMOS transistors (e.g., FinFETs such as double-gate, trigate, etc),...
2016/0351700 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
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