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Patent # Description
2016/0351699 FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS
A field-effect transistor (FET) includes, a first drain, a second drain, a body and a gate region. The gate region has a length, and is configured and arranged...
2016/0351698 Crystalline-Amorphous Transition Material For Semiconductor Devices and Method For Formation
The present disclosure presents a novel structure for a dielectric material for use with Group III-V material systems and a method of fabricating such a...
2016/0351697 SEMICONDUCTOR MODULE WITH TWO AUXILIARY EMITTER CONDUCTOR PATHS
A semiconductor module comprises a semiconductor chip comprising a semiconductor switch having a collector, emitter and gate, a collector terminal connected to...
2016/0351696 EXTREMELY LARGE SPIN HALL ANGLE IN TOPOLOGICAL INSULATOR PN JUNCTION
The interplay between chiral tunneling and spin-momentum locking of helical surface states leads to spin amplification and filtering in a 3D Topological...
2016/0351695 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device according to an embodiment includes a semiconductor layer. A gate dielectric film is provided on the semiconductor layer. A gate...
2016/0351694 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method...
2016/0351693 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
It is an object to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. An oxide...
2016/0351692 Semiconductor Strips with Undercuts and Methods for Forming the Same
An integrated circuit device includes a semiconductor substrate, and a semiconductor strip extending into the semiconductor substrate. A first and a second...
2016/0351691 Trench Power MOSFET
A device includes a semiconductor region of a first conductivity type, a trench extending into the semiconductor region, and a conductive field plate in the...
2016/0351690 METHOD OF FORMING HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE
A method of forming a HVMOS transistor device is provided. A substrate is provided. A first insulation structure and a trench are formed in the substrate. A...
2016/0351689 SEMICONDUCTOR STRUCTURE WITH AN L-SHAPED BOTTOM PLATE
A method of forming a semiconductor structure is provided. The method including forming a first vertical channel on a first layer of source/drain material that...
2016/0351688 METHOD OF MANUFACTURING INSULATED GATE SWITCHING DEVICE
A method of manufacturing an insulated gate switching device includes: forming a trench in a front surface of a semiconductor substrate; forming a gate...
2016/0351687 PROTECTION OF SEMICONDUCTOR-OXIDE-CONTAINING GATE DIELECTRIC DURING REPLACEMENT GATE FORMATION
Semiconductor-oxide-containing gate dielectrics can be formed on surfaces of semiconductor fins prior to formation of a disposable gate structure. A high...
2016/0351686 PMOS TRANSISTOR AND FABRICATION METHOD THEREOF
The disclosed subject matter provides a p-channel metal-oxide-semiconductor (PMOS) and fabrication method thereof. The PMOS transistor is fabricated by a...
2016/0351685 METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP III-N HEMT
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second...
2016/0351684 SIDEWALL PASSIVATION FOR HEMT DEVICES
Some embodiments of the present disclosure relate to a high electron mobility transistor (HEMT) which includes a heterojunction structure arranged over a...
2016/0351683 METHOD OF MAKING TRANSISTOR HAVING METAL DIFFUSION BARRIER
A channel layer is grown over a substrate, and an active layer is grown over the channel layer, wherein the active layer has a band gap discontinuity with the...
2016/0351682 SILICON GERMANIUM HETEROJUNCTION BIPOLAR TRANSISTOR STRUCTURE AND METHOD
Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially...
2016/0351681 METHODS OF FORMING REPLACEMENT FINS FOR A FINFET DEVICE USING A TARGETED THICKNESS FOR THE PATTERNED FIN ETCH MASK
One method disclosed herein includes, among other things, forming a patterned fin having a thickness that is equal to or greater than a target final fin height...
2016/0351680 METHOD FOR MANUFACTURING INSULATED GATE TYPE SWITCHING DEVICE, AND INSULATED GATE TYPE SWITCHING DEVICE
A method is provided for manufacturing an insulated gate type switching device. The method includes: implanting second conductivity type impurities into a...
2016/0351679 THIN FILM DEVICE WITH PROTECTIVE LAYER
Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A substrate is provided. A plurality of metal...
2016/0351678 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
The invention provides a method for fabricating a semiconductor device, including: forming a dummy gate on a substrate, forming an inter-layer dielectric layer...
2016/0351677 METHOD AND APPARATUS FOR SELECTIVELY FORMING NITRIDE CAPS ON METAL GATE
A sacrificial cap is grown on an upper surface of a conductor. A dielectric spacer is against a side of the conductor. An upper dielectric side spacer is...
2016/0351676 SEMICONDUCTOR DEVICE
In a semiconductor device in the present disclosure, a first nitride semiconductor layer has a two-dimensional electron gas channel in a vicinity of an...
2016/0351675 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATE ELECTRODES
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits...
2016/0351674 SEMICONDUCTOR STRUCTURE
A semiconductor process includes the following steps. A dielectric layer is formed on a substrate, where the dielectric layer has at least a dishing from a...
2016/0351673 SEMICONDUCTOR COMPONENT AND METHOD FOR FABRICATING THE SAME
A semiconductor component, which includes a substrate, an interfacial layer disposed on the substrate, a first metal gate structure and a second metal gate...
2016/0351672 SEMICONDUCTOR MEMORY DEVICE INCLUDING SLIMMING STRUCTURE
Disclosed is a semiconductor memory device, including: a slimming structure extended from a cell structure in a direction parallel to the semiconductor...
2016/0351671 METHODS FOR FORMING WRAP AROUND CONTACT
Some embodiments of the present disclosure relate to a contact formed to a source or drain region of a "finned" field-effect transistor (FinFET). An epitaxial...
2016/0351670 THIN FILM TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND MASK
A thin film transistor structure and a manufacturing method thereof, an array substrate, and a mask are provided. The thin film transistor structure includes:...
2016/0351669 METHOD FOR FORMING VIA PROFILE OF INTERCONNECT STRUCTURE OF SEMICONDUCTOR DEVICE STRUCTURE
A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric...
2016/0351668 Stripe-Shaped Electrode Structure Including a Main Portion with a Field Electrode and an End Portion...
A semiconductor device includes a stripe-shaped electrode structure that extends from a first surface into a semiconductor portion. The electrode structure...
2016/0351667 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A silicon carbide epitaxial layer includes: a first impurity region; a second impurity region; and a third impurity region. A gate insulating film is in...
2016/0351666 Gallium Nitride Apparatus with a Trap Rich Region
A method cold-melts a high conductivity region between a high-resistivity silicon substrate and a gallium-nitride layer to form a trap rich region that...
2016/0351665 SEMICONDUCTOR DEVICE
A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first...
2016/0351664 ASPECT RATIO FOR SEMICONDUCTOR ON INSULATOR
A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second...
2016/0351663 SEMICONDUCTOR DEVICE HAVING AN INACTIVE-FIN AND A METHOD OF FORMING THE SAME
A semiconductor device includes a multi-fin active region having a plurality of sub-fins sequentially arranged on a substrate. A gate electrode crosses the...
2016/0351662 FINFETs WITH HIGH QUALITY SOURCE/DRAIN STRUCTURES
A semiconductor structure is provided that includes a silicon germanium alloy fin located on a portion of a topmost surface of an insulator layer. A functional...
2016/0351661 PROCESS FOR PRODUCING MOS TRANSISTORS HAVING A LARGER CHANNEL WIDTH FROM AN SOI AND IN PARTICULAR FDSOI...
An integrated circuit includes a substrate with an isolation region that bounds a zone. A transistor includes a concave semiconductor region that is supported...
2016/0351660 METHOD FOR LOCAL ISOLATION BETWEEN TRANSISTORS PRODUCED ON AN SOI SUBSTRATE, IN PARTICULAR AN FDSOI SUBSTRATE,...
An integrated circuit may include an SOI substrate having a buried insulating layer, and a semiconductor film above the buried insulating layer. The...
2016/0351659 HIGH VOLTAGE FIELD BALANCE METAL OXIDE FIELD EFFECT TRANSISTOR (FBM)
A semiconductor device includes a semiconductor substrate and epitaxial layer of a first conductivity type with the epitaxial layer on a top surface of the...
2016/0351658 Configurations and Methods for Manufacturing Charged Balanced Devices
This invention discloses a semiconductor power device disposed in a semiconductor substrate and the semiconductor substrate has a plurality of deep trenches....
2016/0351657 SEMICONDUCTOR APPARATUS
A semiconductor apparatus includes a semiconductor substrate including a device region and a peripheral region. The peripheral region includes guard rings. A...
2016/0351656 CAPACITOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Provided is a capacitor structure including a substrate, a dielectric layer, a first conductive layer, and a cup-shaped capacitor. The dielectric layer is...
2016/0351655 HIGH-THROUGHPUT DEPOSITION OF A VOLTAGE-TUNABLE DIELECTRIC MATERIAL
High-throughput deposition of a voltage-tunable dielectric material onto a substrate comprising a conductive electrode is provided. Respective gradients in at...
2016/0351654 ON-DIE CAPACITOR (ODC) STRUCTURE
An on-die-capacitor structure includes a first capacitor and a second capacitor. The first capacitor may have first and second terminals. The first and second...
2016/0351653 SEMICONDUCTOR INTEGRATED CIRCUIT
A semiconductor integrated circuit includes an inductor and a plurality of high permeability patterns. The inductor includes one conductive loop. The high...
2016/0351652 ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
An organic light emitting display device includes a thin film transistor (TFT) including a gate electrode and a source electrode. An anode electrode is...
2016/0351651 ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
Discussed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device according to an...
2016/0351650 ORGANIC LIGHT EMITTING DIODE DISPLAY PANEL AND DISPLAY DEVICE WITH SAME
An OLED display panel includes a substrate, a light emitting structure and a driving structure. The substrate defines an electrical conductive hole. The light...
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