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Patent # Description
2016/0351599 DUAL GATE TFT SUBSTRATE STRUCTURE UTILIZING COA SKILL
The present invention provides a dual gate TFT substrate structure utilizing COA skill, comprising a substrate (1), a bottom gate (2) positioned on the...
2016/0351598 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one...
2016/0351597 SEMICONDUCTOR DEVICE
An object is to provide a semiconductor device using an oxide semiconductor having stable electric characteristics and high reliability. A transistor including...
2016/0351596 ELECTRICAL CONNECTION STRUCTURE AND THIN FILM TRANSISTOR ARRAY SUBSTRATE INCLUDING ELECTRICAL CONNECTION STRUCTURE
An electrical connection structure providing better optical properties in a display includes an electrical connection unit, an interference layer, and an...
2016/0351595 ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
An array substrate comprises a substrate, a common electrode formed on the substrate, a light shielding layer disposed on the common electrode, an insulating...
2016/0351594 PACKAGE COVER PLATE, DISPLAY PANEL AND DISPLAY DEVICE HAVING THE SAME
The present application discloses a package cover plate for packaging a curved display panel comprising at least two curved portions.
2016/0351593 A display panel and a manufacturing method thereof
The invention discloses a display panel and a manufacturing method thereof, and the display panel comprises a first substrate and a second substrate disposing...
2016/0351592 ASPECT RATIO FOR SEMICONDUCTOR ON INSULATOR
A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second...
2016/0351591 SEMICONDUCTOR DEVICE, FINFET TRANSISTOR AND FABRICATION METHOD THEREOF
The present disclosure provides semiconductor devices, fin field-effect transistors and fabrication methods thereof. An exemplary fin field-effect transistor...
2016/0351590 PREVENTING STRAINED FIN RELAXATION
A semiconductor structure includes a first strained fin portion and a second strained fin portion, a pair of inactive inner gate structures upon respective...
2016/0351589 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device that occupies a small area and has a high degree of integration is provided. The semiconductor device includes a first insulating layer,...
2016/0351588 ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
Embodiments of the disclosure disclose an array substrate and a fabrication method thereof, and a display device. The fabrication method of the array substrate...
2016/0351587 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
A semiconductor device including a circuit which does not easily deteriorate is provided. The semiconductor device includes a first transistor, a second...
2016/0351586 DISPLAY DEVICE
A display device includes: a display panel; a driver integrated circuit (IC) including a first surface electrically connected to the display panel and a second...
2016/0351585 ARRAY SUBSTRATE AND DISPLAY DEVICE
An array substrate and a display device are provided. The array substrate comprises a plurality of signal lines (40), a plurality of connecting lines (50) and...
2016/0351584 ACTIVE MATRIX BACKPLANE FORMED USING THIN FILM OPTOCOUPLERS
A device includes a backplane having multiple output terminals arranged in an array on an output surface of the backplane. The device further includes an...
2016/0351583 INTEGRATED CIRCUIT, SEMICONDUCTOR DEVICE BASED ON INTERGRATED CIRCUIT, AND STANDARD CELL LIBRARY
An integrated circuit (IC) may include at least one cell including a plurality of conductive lines that extend in a first direction and are in parallel to each...
2016/0351582 SEMICONDUCTOR DEVICE
Provided is a semiconductor device including a substrate, gate electrodes vertically stacked on the substrate, insulating patterns between the gate electrodes,...
2016/0351581 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes a substrate including a cell region and a peripheral region, a cell stacked structure stacked on the substrate in the cell...
2016/0351580 DEVICES AND METHODS INCLUDING AN ETCH STOP PROTECTION MATERIAL
Protective dielectrics are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory may include a protective dielectric...
2016/0351579 MEMORY DEVICE
Various embodiments provide memory devices and methods for forming the same. A substrate is provided, the substrate having one or more adjacent memory cells...
2016/0351578 PILLAR ARRANGEMENT IN NAND MEMORY
Embodiments of the present disclosure are directed towards techniques and configurations for providing a 3D memory array apparatus. In one embodiment, the...
2016/0351577 FERROELECTRIC RANDOM-ACCESS MEMORY WITH PRE-PATTERNED OXYGEN BARRIER
Structure of F-RAM cells are described. The F-RAM cell include a contact extending through a first dielectric layer on a surface of a substrate. A barrier...
2016/0351576 SEMICONDUCTOR DEVICE
A highly integrated semiconductor device is provided. The semiconductor device includes a substrate, a prism-like insulator, a memory cell string including a...
2016/0351575 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
The present invention provides a semiconductor structure, including a substrate, a plurality of fin structures, a plurality of gate structures, a dielectric...
2016/0351574 STRUCTURES, DEVICES AND METHODS FOR MEMORY DEVICES
Structures, devices and methods are provided for fabricating memory devices. A structure includes: a first conductive line disposed in a first conductive...
2016/0351573 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
One memory cell region includes memory cells that are aligned in a first direction and a second direction orthogonal to the first direction, a word line...
2016/0351572 Semiconductor Device and Method for Driving Semiconductor Device
The semiconductor device includes a first memory cell, and a second memory cell thereover. The first memory cell includes first and second transistors, and a...
2016/0351571 SEMICONDUCTOR DEVICE
Provided is a semiconductor device including a gate structure, a first doped region of a first conductivity type, a plurality of second doped regions of a...
2016/0351570 SEMICONDUCTOR DEVICES INCLUDING VARIED DEPTH RECESSES FOR CONTACTS
A first conductivity type finFET device can include first embedded sources/drains of a first material that have a first etch rate. The first embedded...
2016/0351569 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Provided are a semiconductor device in which a multi-threshold voltage is embodied by controlling a work function, and a method of manufacturing the same. The...
2016/0351568 STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
2016/0351567 Switching device for switching radio frequency signals
The invention relates to a switching device for switching radio frequency signals. The switching devices comprises at least a first field effect transistor...
2016/0351566 METHOD FOR FORMING SOURCE/DRAIN CONTACTS DURING CMOS INTEGRATION USING CONFINED EPITAXIAL GROWTH TECHNIQUES AND...
A semiconductor device includes an isolation region laterally defining an active region in a semiconductor substrate, a gate structure positioned above the...
2016/0351565 INTEGRATED CIRCUIT (IC) DEVICES INCLUDING STRESS INDUCING LAYERS
Integrated circuit devices are provided. The devices may include first and second fin-shaped channel regions protruding from a substrate, and the first and...
2016/0351564 SEMICONDUCTOR STRUCTURE WITH A SPACER LAYER
A multi-layer semiconductor structure is disclosed for use in III-Nitride semiconductor devices, including a channel layer, a band-offset layer having a wider...
2016/0351563 SEMICONDUCTOR STRUCTURE AND MANUFACTURING PROCESS THEREOF
A process of manufacturing a semiconductor structure is provided. The process begins with forming a work function metal layer on a substrate, and a hardmask is...
2016/0351562 SEMICONDUCTOR DEVICE
In a plan view of a semiconductor substrate, the semiconductor substrate includes a pillar exposing area in which the pillar region is exposed on the front...
2016/0351561 REVERSE CONDUCTING IGBT
A reverse conducting IGBT is provided with a trench gate member that is provided in an IGBT region and has a lattice-pattern layout, and a trench member that...
2016/0351560 SCHOTTKY BARRIER DIODE
An SBD includes a semiconductor substrate; an anode electrode which is in Schottky contact with a front surface of the semiconductor substrate; and a cathode...
2016/0351559 OPERATIONAL GALLIUM NITRIDE DEVICES
A power circuit is described that includes a semiconductor body having a common substrate and a Gallium Nitride (GaN) based substrate. The GaN based substrate...
2016/0351558 FIN TYPE ELECTROSTATIC DISCHARGE PROTECTION DEVICE
A fin type ESD protection device includes at least one first fin, at least one second fin, and at least one gate structure. The first fin is disposed on a...
2016/0351557 Semiconductor Device Comprising Electrostatic Discharge Protection Structure
A semiconductor device includes a semiconductor body having first and second opposing surfaces, a first isolation layer on the first surface of the...
2016/0351556 VARIABLE CAPACITANCE DEVICE
A variable capacitance device that includes a semiconductor substrate, a redistribution layer disposed on a surface of the semiconductor substrate, and a...
2016/0351555 SYSTEM AND METHOD OF PROCESSING CUTTING LAYOUT AND EXAMPLE SWITCHING CIRCUIT
An integrated circuit includes a plurality of gate electrode structures extending along a first direction and having a predetermined spatial resolution...
2016/0351554 Package-on-Package Structures and Methods for Forming the Same
A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further...
2016/0351553 COMPLETE SYSTEM-ON-CHIP (SOC) USING MONOLITHIC THREE DIMENSIONAL (3D) INTEGRATED CIRCUIT (IC) (3DIC) TECHNOLOGY
Embodiments disclosed in the detailed description include a complete system-on-chip (SOC) solution using monolithic three dimensional (3D) integrated circuit...
2016/0351552 DISPLAY DEVICE AND ELECTRONIC DEVICE
To provide a display device which includes a touch sensor and a large number of pixels and in which a driver circuit of a display portion and a driver circuit...
2016/0351551 SEMICONDUCTOR DEVICE WITH MODIFIED CURRENT DISTRIBUTION
Semiconductor devices having modified current distribution and methods of forming the same are described herein. As an example, a memory die in contact with a...
2016/0351550 LIGHT-EMITTING ARRANGEMENT AND METHOD OF PRODUCING A LIGHT-EMITTING ARRANGEMENT
A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission...
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