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Patent # Description
2016/0351449 NON-LITHOGRAPHICALLY PATTERNED DIRECTED SELF ASSEMBLY ALIGNMENT PROMOTION LAYERS
A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a...
2016/0351448 CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL HARDMASK SIDEWALLS
A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask...
2016/0351447 CRITICAL DIMENSION SHRINK THROUGH SELECTIVE METAL GROWTH ON METAL HARDMASK SIDEWALLS
A method for fabricating a self-aligned via structure includes forming a tri-layer mask on an ILD layer over a lower metal wiring layer, the tri-layer mask...
2016/0351446 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A barrier metal is formed from a surface of an interlayer insulating film 2 to a trench that is formed in a semiconductor portion exposed in a contact hole....
2016/0351445 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device may include forming an insulating layers on a substrate, forming a plurality of holes in an upper portion of...
2016/0351444 TUNGSTEN FILMS HAVING LOW FLUORINE CONTENT
Aspects of the methods and apparatus described herein relate to deposition of tungsten nucleation layers and other tungsten-containing films. Various...
2016/0351443 INORGANIC ALD FILM ON AN ORGANIC POLYMER SURFACE
The present invention relates to a method and a composition comprising a polymer substrate having free volume and/or a porous surface; and an inorganic film...
2016/0351442 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
According to present invention, a semiconductor device includes a semiconductor substrate formed of GaAs, an adhesion layer formed of Pd or an alloy containing...
2016/0351441 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to an embodiment, a method of manufacturing a semiconductor device includes forming a first opening that extends from a second surface of a...
2016/0351440 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a method of manufacturing a semiconductor device comprises forming a first insulating film and a wiring pattern and forming a...
2016/0351439 ASPECT RATIO FOR SEMICONDUCTOR ON INSULATOR
A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second...
2016/0351438 METHOD FOR TRANSFERRING A LAYER FROM A SINGLE-CRYSTAL SUBSTRATE
A method for transferring a layer from a single-crystal substrate, called a donor substrate, onto a receiver substrate, includes supplying the single-crystal...
2016/0351437 HIGH RESISTIVITY SOI WAFERS AND A METHOD OF MANUFACTURING THEREOF
A high resistivity single crystal semiconductor handle structure for use in the manufacture of SOI structure is provided. The handle structure comprises an...
2016/0351436 LOW TEMPERATURE WAFER BONDING
A method of low temperature wafer bonding is provided. The method comprises: providing oxide to form a bonding layer on a deposition surface of at least one of...
2016/0351435 SHALLOW TRENCH ISOLATION TRENCHES AND METHODS FOR NAND MEMORY
A method of forming a shallow trench isolation trench in a semiconductor substrate is described. The method includes forming a trench in a region of the...
2016/0351434 SUBSTRATE CONVEYING SYSTEM AND METHOD
The end effector has a first hand and a second hand which can be driven independently from each other. The first hand has a hand body which can be inserted...
2016/0351433 ELECTRONIC COMPONENT SUPPLY BODY AND METHOD FOR MANUFACTURING THE SAME
An electronic component supply body and a method for manufacturing the same, which can suppress generation of wrinkles of an adhesive sheet and is unlikely to...
2016/0351432 FILM FOR SEMICONDUCTOR BACK SURFACE AND ITS USE
It is an object of the present invention to provide a film for semiconductor back surface having reworkability, and an application of the film. A film for...
2016/0351431 MEMBER PEELING METHOD, MEMBER PROCESSING METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP
A member peeling method includes a step for preparing a first member having a first main face and an outer edge thereof and a second member having a second...
2016/0351430 APPARATUS FOR PROCESSING SUBSTRATE
An apparatus for processing a substrate includes a load port on that a substrate transfer container accommodating a substrate is laid, a processing part...
2016/0351429 PROCESSING CHAMBER, COMBINATION OF PROCESSING CHAMBER AND LOADLOCK, AND SYSTEM FOR PROCESSING SUBSTRATES
A system for processing substrates having an atmospheric front end and a vacuum main frame, primary processing chambers attached to the main frame, a loadlock...
2016/0351428 WAFER TRANSPORT DEVICE
A wafer transport device including a robot arm, a first pin set and a mountable and dismountable C-ring. The robot arm has a first wafer carrying region. The...
2016/0351427 PURGE DEVICE AND PURGE METHOD
A purge apparatus is a purge apparatus that purges an inside of a storage container in which a product is stored, with a purge gas. The purge apparatus...
2016/0351426 WAFER SURFACE 3-D TOPOGRAPHY MAPPING BASED ON IN-SITU TILT MEASUREMENTS IN CHEMICAL VAPOR DEPOSITION SYSTEMS
The surface topography of at least one wafer can be determined in-situ based on deflectometer measurements of surface tilt. The deflectometer is re-positioned...
2016/0351425 TEACHING METHOD AND SUBSTRATE TREATING APPARATUS USING THE SAME
Disclosed is a teaching method of setting a location of a robot that transports a substrate onto a rotatable support plate that supports the substrate, the...
2016/0351424 LIGHT IRRADIATION TYPE HEAT TREATMENT APPARATUS
A plurality of support pins that support a semiconductor wafer are located upright on a top surface of a susceptor. A condenser lens is located on a bottom...
2016/0351423 BAKING APPARATUS AND METHOD
A baking apparatus for baking a wafer is provided. The baking apparatus includes a wafer chuck configured to hold the wafer, and a heating device disposed over...
2016/0351422 Multiple Swivel Arm Design in Hybrid Bonder
An apparatus for cleaning a wafer includes a wafer station configured to hold the wafer, and a first and a second dispensing system. The first dispensing...
2016/0351421 SUBSTRATE PROCESSING APPARATUS
In a substrate processing apparatus, chucks and engagement parts are disposed on the upper surface of a holding base part that extends radially outward of a...
2016/0351420 SEMICONDUCTOR APPARATUS AND ADJUSTMENT METHOD
A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer chuck configured to hold a wafer, and a first nozzle configured to dispense...
2016/0351419 Semiconductor Device and Method of Balancing Surfaces of an Embedded PCB Unit with a Dummy Copper Pattern
A semiconductor device has a substrate. A conductive via is formed through the substrate. A plurality of first contact pads is formed over a first surface of...
2016/0351418 RESIDUE FREE OXIDE ETCH
A method for selectively etching silicon oxide is provided. A surface reaction phase is provided comprising flowing a surface reaction gas comprising hydrogen,...
2016/0351417 SUBSTRATE TREATMENT METHOD AND SUBSTRATE TREATMENT APPARATUS
In accordance with an embodiment, a substrate treatment method includes bringing a first metallic film on a substrate into contact with a first liquid, mixing...
2016/0351416 ELECTRODE STRUCTURE AND METHOD OF MANUFACTURING THE SAME, DISPLAY SUBSTRATE AND DISPLAY DEVICE
The present invention discloses an electrode structure, a method of manufacturing an electrode structure, a display substrate and a display device. The method...
2016/0351415 SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR...
A semiconductor substrate for flash lamp anneal is used in a manufacturing process of performing ion implantation to form a p-n junction on a semiconductor...
2016/0351414 SYSTEMS AND METHODS FOR ANNEALING SEMICONDUCTOR STRUCTURES
Systems and methods are provided for annealing a semiconductor structure. In one embodiment, the method includes providing an energy-converting structure...
2016/0351413 METHOD FOR PROCESSING A SEMICONDUCTOR LAYER, METHOD FOR PROCESSING A SILICON SUBSTRATE, AND METHOD FOR...
According to various embodiments, a method for processing a semiconductor layer may include: generating an etch plasma in a plasma chamber of a remote plasma...
2016/0351412 SYSTEM AND METHOD FOR REGENERATING PHOSPHORIC ACID SOLUTION, AND APPARATUS AND METHOD FOR TREATING SUBSTRATE
Disclosed is a method of regenerating a phosphoric acid solution from a treatment liquid including silicon (Si), hydrogen fluoride (HF), and phosphoric acid,...
2016/0351411 HYBRID FIN CUTTING PROCESSES FOR FINFET SEMICONDUCTOR DEVICES
One illustrative method disclosed herein includes, among other things, forming a fin-removal masking layer comprised of a plurality of line-type features, each...
2016/0351410 METHOD FOR FORMING PATTERNS FOR SEMICONDUCTOR DEVICE
A method for forming patterns for semiconductor device includes following steps. A substrate is provided. The substrate includes a hard mask layer and a...
2016/0351409 SUBSTRATE PLANARIZING METHOD AND DROPPING AMOUNT CALCULATING METHOD
According to one embodiment, a substrate planarizing method includes dropping from above a substrate with topography, resist whose amount is determined in...
2016/0351408 METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process,...
2016/0351407 ETCHING METHOD
An etching method of etching a first region including a multilayered film, in which silicon oxide films and silicon nitride films are alternately stacked, and...
2016/0351406 ETCHING METHOD
A method of etching a first region including a multilayered film, in which first dielectric films and second dielectric films serving as silicon nitride films...
2016/0351405 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing method includes forming plasma in a processing chamber; and performing etching to a film to be processed of a film structure that has...
2016/0351404 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
A plasma processing apparatus or a plasma processing method that processes a wafer to be processed, which is placed on a surface of a sample stage arranged in...
2016/0351403 DUAL ENDPOINT DETECTION FOR ADVANCED PHASE SHIFT AND BINARY PHOTOMASKS
The present invention provides a method and apparatus for etching a photomask substrate with enhanced process monitoring, for example, by providing for optical...
2016/0351402 METHOD OF REDUCING STRESS IN METAL FILM AND METAL FILM FORMING METHOD
There is provided a method of reducing stress in a metal film that is highly stressed, the method including: processing the metal film by supplying a metal...
2016/0351401 DEPOSITION OF LOW FLUORINE TUNGSTEN BY SEQUENTIAL CVD PROCESS
Provided herein are methods of depositing bulk tungsten by sequential CVD pulses, such as by alternately pulsing tungsten hexafluoride and hydrogen gas in...
2016/0351400 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device, where the device includes a donor layer that is obtained by changing a crystal defect formed in a...
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