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Patent # Description
2016/0365509 MEMORY DEVICE
According to one embodiment, a memory device includes a stacked body and a controller. The stacked body includes a first magnetic layer, a second magnetic...
2016/0365508 MEMORY DEVICE
According to one embodiment, a memory device includes a stacked structure and a controller. The stacked structure includes a first magnetic layer, a second...
2016/0365507 MAGNETORESISTIVE SENSOR, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE
A method for manufacturing a magnetoresistive sensor may include the following steps: forming a trench structure in a substrate, wherein the step of forming...
2016/0365506 MAGNETIC MEMORY DEVICES
Embodiments of the inventive concepts provide magnetic memory devices. The magnetic memory device includes a magnetic tunnel junction including a free layer, a...
2016/0365505 DE-INTEGRATED TRENCH FORMATION FOR ADVANCED MRAM INTEGRATION
A semiconductor device may include a magnetoresistive random-access memory (MRAM) trench having a first conductive barrier liner and a second conductive...
2016/0365504 PIEZOELECTRIC THIN FILM ELEMENT, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING...
A method for manufacturing an alkali-niobate-based piezoelectric thin film element includes a lower-electrode-film forming step of forming a lower electrode...
2016/0365503 PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM DEVICE, TARGET, AND METHODS FOR MANUFACTURING PIEZOELECTRIC...
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains...
2016/0365502 PIEZOELECTRIC MATERIAL, PIEZOELECTRIC ELEMENT, AND ELECTRONIC APPARATUS
There is provided a lead-free piezoelectric material having a satisfactory piezoelectric constant and mechanical quality factor in the range of device...
2016/0365501 CURVED PIEZOELECTRIC DEVICE
Disclosed is a curved piezoelectric device maximizing an electrical potential of the piezoelectric material corresponding to an external mechanical stress. The...
2016/0365500 Thermoelectric Power Generation Device
The invention relates to a thermoelectric-based power generation system designed to be clamped onto the outer wall of a steam pipe or other heating pipe. The...
2016/0365499 THERMAL GROUND PLANES AND LIGHT-EMITTING DIODES
Methods and systems for thermal management of one or more LEDs are disclosed. One or more LEDs may be coupled with an external layer of a thermal ground plane...
2016/0365498 LIGHT EMITTING DEVICE
A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being...
2016/0365497 LIGHT EMITTING DEVICE PACKAGE
A light emitting device package includes: a package board including a first electrode structure and a second electrode structure; and a light emitting device...
2016/0365496 LIGHT-EMITTING DEVICE
A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective...
2016/0365495 RESIN-ATTACHED LEAD FRAME AND SEMICONDUCTOR DEVICE
A resin-attached lead frame and a semiconductor device including the resin-attached lead frame. The resin-attached lead frame includes a lead frame main body...
2016/0365494 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE
A light emitting device includes a base member including a conductive member; a light mining element arranged on the base member, the light emitting element...
2016/0365493 LIGHT-EMITTING DIODE DEVICE
A light-emitting diode device includes a shell with a recess, wherein the shell does not contain metal oxide. A plurality of lead frames extends from the...
2016/0365492 SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device includes a substrate, an LED chip mounted on the substrate, and a resin package covering the LED chip. The substrate...
2016/0365491 Light Emitting Structure, Light Device and Backlight Module
The present disclosure provides a light emitting structure including a blue light source, a first fluorescent material layer and a second fluorescent material...
2016/0365490 Carrier, Optoelectronic Unit Comprising a Carrier, and Methods for the Production of Both
A method for manufacturing a carrier and a carrier for an optoelectronic unit are disclosed. In various embodiments the carrier has a carrier material which...
2016/0365489 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as...
2016/0365488 Flip-Chip LED Structure and Fabrication Method
A flip-chip light LED includes: a substrate; an epitaxial layer on the substrate, wherein, the epitaxial layer comprises: a first semiconductor layer, a second...
2016/0365487 LIGHT EMITTING DEVICE WITH REFLECTIVE SIDEWALL
Embodiments of the invention include a light emitting device including a substrate and a semiconductor structure including a light emitting layer. A first...
2016/0365486 LIGHT EMITTING DEVICE
A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on...
2016/0365485 HIGH-VOLTAGE FLIP LED CHIP AND MANUFACTURING METHOD THEREOF
A high-voltage flip LED chip and a manufacturing method thereof. In the high-voltage flip LED chip, a P-N electrode connecting metal block is filled into an...
2016/0365484 LIGHT EMITTING DEVICE
A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type...
2016/0365483 HIGH VOLTAGE LED FLIP CHIP
A high voltage LED flip chip includes two or more regions; a Mesa-platform, the Mesa-platform in each region has a first groove; a first electrode located on...
2016/0365482 METHOD FOR MANUFACTURING HIGH VOLTAGE LED FLIP CHIP
A method for manufacturing a high voltage LED flip chip is provided, including: providing a substrate; forming an epitaxy stacking layer on the substrate;...
2016/0365481 SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device includes a light-emitting member that includes a first semiconductor layer of a first conductivity type, a second...
2016/0365480 HIGH EFFICIENCY VISIBLE AND ULTRAVIOLET NANOWIRE EMITTERS
GaN-based nanowire heterostructures have been intensively studied for applications in light emitting diodes (LEDs), lasers, solar cells and solar fuel devices....
2016/0365479 METHOD OF MANUFACTURING N-P-N NITRIDE-SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND N-P-N NITRIDE-SEMICONDUCTOR...
This application provides a method of manufacturing an n-p-n nitride-semiconductor light-emitting device which includes a current confinement region(A) using a...
2016/0365478 NANOSTRUCTURE MATERIAL STACK-TRANSFER METHODS AND DEVICES
In one aspect, methods are provided for fabrication of multiple layers of a nanostructure material composite, and devices produced by such methods. In another...
2016/0365477 METHOD OF MAKING A SEMICONDUCTOR DEVICE
A method of making a semiconductor device includes: (a) providing a semiconductor substrate that is made from a material containing an element of boron group;...
2016/0365476 Semiconductor Device For Optoelectronic Integrated Circuits
A semiconductor device includes a series of layers formed on a substrate, including a first plurality of n-type layers, a second plurality of layers that form...
2016/0365475 Fabrication Methodology For Optoelectronic Integrated Circuits
A method of forming an integrated circuit employs a plurality of layers formed on a substrate including i) n-type modulation doped quantum well structure...
2016/0365474 GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR
There is provided a Group III nitride semiconductor light-emitting device in which reduction in the light emission amount in an operation at a high temperature...
2016/0365473 MIS-IL SILICON SOLAR CELL WITH PASSIVATION LAYER TO INDUCE SURFACE INVERSION
The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a...
2016/0365472 METHOD OF MANUFACTURING SOLAR CELL
Disclosed is a method of manufacturing a solar cell. The method includes forming a protective film using an insulation film over a semiconductor substrate, the...
2016/0365471 METHODS OF FORMING CIGS FILMS
Methods for forming CIGS films are provided. According to an aspect of the invention, a method of forming a CIGS film includes a precursor step, which includes...
2016/0365470 OPTOCOUPLER
An optocoupler having a transmitter module and a receiver module that are galvanically isolated from each other and optically coupled with one another and are...
2016/0365469 SOLAR CELL ARRAY
A solar cell array is made of a plurality of bifacial PERC solar cells, respectively formed in a semiconductor body, which are electrically interconnected by...
2016/0365468 ALL FRONT CONTACT SOLAR CELL
A photovoltaic solar cell, including an N-side layer proximate to a first planar surface and a P-side layer proximate to a second planar surface that is...
2016/0365467 SYSTEMS AND METHODS FOR MONOLITHICALLY INTEGRATED BYPASS SWITCHES AND PHOTOVOLTAIC SOLAR CELLS
Structures and methods for a solar cell having an integrated bypass switch are provided. According to one embodiment, an integrated solar cell and bypass...
2016/0365466 INVERTED METAMORPHIC MULTIJUNCTION SOLAR SUBCELLS COUPLED WITH GERMANIUM BOTTOM SUBCELL
A multijunction solar cell assembly which includes a first semiconductor body including: an upper first solar subcell having a first band gap; a second solar...
2016/0365465 SENSOR AND MANUFACTURING METHOD OF SENSOR
A manufacturing method of a sensor including the following steps and a sensor are provided. An active device and a first insulation layer covering the active...
2016/0365464 PHOTODIODE SPAD HAVING AN ARRAY OF PADS
The invention relates to a SPAD photodiode (100) having a layer made of semiconductor material (110), including an N doped zone (111) and a P doped zone (112)...
2016/0365463 IR PHOTODETECTOR USING METAMATERIAL-BASED ON AN ANTIREFLECTION COATING TO MATCH THE IMPEDANCE BETWEEN AIR AND...
Provided are an infrared photodetector and a method for manufacturing the same. The infrared photodetector includes a bottom contact layer, a light absorption...
2016/0365462 IMAGING APPARATUS, METHOD OF MANUFACTURING THE SAME, AND CAMERA
A method of manufacturing an imaging apparatus includes: preparing a substrate comprising a wafer and a silicon layer arranged on the wafer, the wafer...
2016/0365461 COOLING STRUCTURE FOR PHOTOELECTRIC CONVERSION ELEMENT
This cooling mechanism for a surface-mounted-type photoelectric conversion element is provided on a circuit board to which a surface-mounted-type photoelectric...
2016/0365460 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred...
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