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Patent # Description
2016/0365259 SYSTEM FOR WET ETCHING
A system for wet etching. The system comprises an etching region, a buffer region and a washing region which are communicated in order. An air knife unit is...
2016/0365258 SEMICONDUCTOR DEVICE INCLUDING STRUCTURE TO CONTROL UNDERFILL MATERIAL FLOW
A semiconductor device includes a substrate, a semiconductor chip, and an array of contact elements electrically coupling the substrate to the semiconductor...
2016/0365257 CHIP PACKAGE METHOD AND PACKAGE ASSEMBLY
The present disclosure relates to a chip package method and a package assembly. A metal plate is micro-etched to form trenches having a predetermined depth. A...
2016/0365256 Staggered Via Redistribution Layer (RDL) for a Package and a Method for Forming the Same
An embodiment staggered via redistribution layer (RDL) for a package includes a first polymer layer supported by a metal via. The first polymer layer has a...
2016/0365255 Modification of Electrical Properties of Topological Insulators
Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or...
2016/0365254 ETCHANT, ETCHING METHOD USING SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
Provided is an etchant for a semiconductor process, which contains a sulfonic acid compound, a halogen ion, nitric acid or a nitric acid ion, an organic...
2016/0365253 SYSTEM AND METHOD FOR CHEMICAL MECHANICAL PLANARIZATION PROCESS PREDICTION AND OPTIMIZATION
A system for processing a semiconductor wafer includes a database configured to store data including relationships between device pattern characteristics,...
2016/0365252 METHOD OF LATERAL OXIDATION OF NFET AND PFET HIGH-K GATE STACKS
A method for fabricating a semiconductor circuit includes obtaining a semiconductor structure having a gate stack of material layers including a high-k...
2016/0365251 SYSTEMS AND METHODS FOR FORMING ULTRA-SHALLOW JUNCTIONS
A method for forming a junction on a substrate includes removing a native oxide layer of a bulk material; doping an outer layer of the bulk material with...
2016/0365250 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device that includes a p-type region formed selectively along one principle surfaces of an n-type drift layer and having a resistance that is...
2016/0365249 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
According to one embodiment, a method for manufacturing a semiconductor device includes forming a mask layer on a layer to be etched. The mask layer contains...
2016/0365248 CONFORMAL STRIPPABLE CARBON FILM FOR LINE-EDGE-ROUGHNESS REDUCTION FOR ADVANCED PATTERNING
Embodiments of the disclosure relate to deposition of a conformal organic material over a feature formed in a photoresist or a hardmask, to decrease the...
2016/0365247 METHOD OF FABRICATING TRANSIENT SEMICONDUCTOR BASED ON SINGLE-WALL NANOTUBE
A method of fabricating a transient semiconductor based on a single-wall nanotube includes stacking a thermal oxide layer on a silicon substrate and depositing...
2016/0365246 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM
A method of manufacturing a semiconductor device includes forming a seed layer containing a predetermined element on a substrate by performing a process a...
2016/0365245 METHOD FOR FILLING GAPS OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FORMED BY THE SAME
A method for filling gaps of semiconductor device and a semiconductor device with insulation gaps formed by the same are provided. First, a silicon substrate...
2016/0365244 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films
Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500.degree. C. is disclosed. Silicon precursors used have a formula of: ...
2016/0365243 Method of Manufacturing Semiconductor Device and Substrate Processing Method
A method of manufacturing a semiconductor device for forming a thin film having low permittivity, high etching resistance and high leak resistance is provided....
2016/0365242 Novel Polymer with a Good Heat Resistance and Storage Stability, Underlayer Film Composition Containing the...
Provided are a polymer for an underlayer film, used in semiconductor and display manufacturing processes, an underlayer film composition for semiconductor and...
2016/0365241 METHOD FOR COATING CAVITIES OF SEMICONDUCTOR SUBSTRATES
A method for temporary coating of cavities, which at least partially run through a semiconductor substrate and are provided for a permanent coating and/or...
2016/0365240 SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD
In one embodiment, a substrate treatment method includes cleaning and rinsing a surface of a substrate provided with a pattern, and supplying a solidifying...
2016/0365239 METHOD OF MANUFACTURING EPITAXIAL WAFER AND SILICON-BASED SUBSTRATE FOR EPITAXIAL GROWTH
A method of manufacturing an epitaxial wafer having an epitaxial layer on a silicon-based substrate, the method of manufacturing the epitaxial wafer including...
2016/0365238 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
A substrate processing method includes a liquid film forming step of forming a liquid film of an organic solvent with which a whole area of an upper surface of...
2016/0365237 CALCIUM FLUORIDE OPTICAL MEMBER, MANUFACTURING METHOD THEREFOR, GAS-HOLDING CONTAINER, AND LIGHT SOURCE DEVICE
There is provided a calcium fluoride optical member formed from monocrystalline calcium fluoride and having a tubular shape. A {110} crystal plane or a {111}...
2016/0365236 Optimized Multiple Reaction Monitoring or Single Ion Recording Method
A method of mass spectrometry is disclosed comprising monitoring for the emergence of one or more species of ions of interest and determining during the course...
2016/0365235 TIME OF FLIGHT TUBES AND METHODS OF USING THEM
Certain embodiments described herein are directed to time of flight tubes comprising a cylindrical tube comprising an inner surface and an outer surface, the...
2016/0365234 VACUUM PUMP AND MASS SPECTROMETER
A vacuum pump comprises: a first pump stage; a second pump stage provided downstream of the first pump stage; a first suction port provided on a suction side...
2016/0365233 REFLECTRONS AND METHODS OF PRODUCING AND USING THEM
Certain embodiments described herein are directed to reflectron assemblies and methods of producing them. In some configurations, a reflectron comprising a...
2016/0365232 Impactor Spray Atmospheric Pressure Ion Source with Target Paddle
An ion source is provided comprising one or more nebulisers and one or more targets, wherein the one or more nebulisers are arranged and adapted to emit, in...
2016/0365231 METHOD FOR TANDEM MASS SPECTROMETRY ANALYSIS IN ION TRAP MASS ANALYZER
This invention is related to a tandem mass spectrometric analysis method in ion trap mass analyzer. Such method comprise three stages as represented by...
2016/0365230 COLLISION CELLS AND METHODS OF USING THEM
Certain embodiments described herein are directed to collision cells that comprise one or more integrated lenses. In some examples, a lens is coupled to two...
2016/0365229 TEMPERATURE CONTROL METHOD AND PLASMA PROCESSING APPARATUS
A method for controlling the temperature of a mounting table in a plasma processing apparatus, includes: calculating a first heat input amount according to...
2016/0365228 COMPONENT OF A PLASMA PROCESSING APPARATUS HAVING A PROTECTIVE IN SITU FORMED LAYER ON A PLASMA EXPOSED SURFACE
A component of a plasma processing chamber having a protective liquid layer on a plasma exposed surface of the component The protective liquid layer can be...
2016/0365227 SEMICONDUCTOR MANUFACTURING APPARATUS
A semiconductor manufacturing apparatus according to an embodiment comprises a chamber capable of containing a substrate therein. A mount part can have the...
2016/0365226 CHARGED PARTICLE BEAM LITHOGRAPHY METHOD AND CHARGED PARTICLE BEAM LITHOGRAPHY APPARATUS
According to one aspect of the present invention, a charged particle beam lithography method includes forming, such that a shape identical to a first figure...
2016/0365225 IN-SITU PLASMA CLEANING OF PROCESS CHAMBER COMPONENTS
Provided herein are approaches for in-situ plasma cleaning of one or more components of an ion implantation system. In one approach, the component may include...
2016/0365224 METHOD OF ANALYZING SURFACE MODIFICATION OF A SPECIMEN IN A CHARGED-PARTICLE MICROSCOPE
A method of investigating a specimen using a charged particle microscope, including: Producing and storing a first image, of a first, initial surface of the...
2016/0365223 METHOD FOR EVALUATING CHARGED PARTICLE BEAM DRAWING APPARATUS
In one embodiment, a charged particle beam drawing apparatus performs drawing by deflecting a charged particle beam with a deflector. A method for evaluating...
2016/0365222 METHOD FOR IMAGING WAFER WITH FOCUSED CHARGED PARTICLE BEAM IN SEMICONDUCTOR FABRICATION
A method for processing a semiconductor wafer is provided. The method includes positioning the semiconductor wafer in a scanning electron microscope (SEM). The...
2016/0365221 ANALYZING ENERGY OF CHARGED PARTICLES
An analysis device, possibly having an electrostatic and/or magnetic lens, analyzes the energy of charged particles and has an opposing field grid device to...
2016/0365220 ANALYSIS METHOD USING ELECTRON MICROSCOPE, AND ELECTRON MICROSCOPE
An analysis method using an electron microscope, detects by a first electronography detector an electron beam transmitted through or scattered by a sample to...
2016/0365219 Stage Device and Charged Particle Beam Device Using the Same
To provide a stage device and a charged particle beam device using the same capable of effectively suppressing thermal deformation of a stage generated by...
2016/0365218 X-RAY TUBE
According to one embodiment, an X-ray tube includes a cathode including a filament, an anode target, and an envelope. The cathode includes a metal lead wire...
2016/0365217 Photocathode and Method for Assembly
Technologies are described for methods for fabricating a film component. The methods may comprise sputtering a first film onto a substrate. The first film may...
2016/0365216 PYROLYZED POROUS CARBON MATERIALS AND ION EMITTERS
Embodiments related to the use and production of porous carbon materials in ion emitters and other applications are described
2016/0365215 High Efficiency Hollow Cathode and Cathode System Applying Same
The present invention relates to a high efficiency hollow cathode and a cathode system applying the same, and comprises: a tube comprising at least two...
2016/0365214 CIRCUIT BREAKER FOR AN ELECTRICAL CIRCUIT
A circuit breaker is disclosed, including a series circuit including a measuring unit for determining the electrical current or/and voltage of the electrical...
2016/0365213 Detection of Dependent Failures
Devices and methods are provided which facilitate detecting of a disturbance parameter being outside a predetermined range. Such disturbance parameter may for...
2016/0365212 RETAINING ASSEMBLY FOR A CIRCUIT BREAKER CONTACT SYSTEM
A moveable contact arm assembly includes a moveable contact arm having a moveable contact thereon. Also included is a carrier assembly operatively coupled to...
2016/0365211 ELECTROMAGNETIC CONTACTOR
An electromagnetic contactor with connecting spring including: a movable core contact plate section that is inserted into a through hole formed in a movable...
2016/0365210 PRESSURE-CONTROLLED ELECTRICAL RELAY DEVICE
An electrical relay device includes a housing, a wire coil, an actuator assembly, and a shell. The housing extends between a closed end and an open end and...
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