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Patent # Description
2016/0372654 PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM DEVICE
A piezoelectric thin film contains potassium sodium niobate represented by general formula (K.sub.1-xNa.sub.x)NbO.sub.3 and CaTiO.sub.3, wherein the lattice...
2016/0372653 ALUMINUM NITRIDE PIEZOELECTRIC THIN FILM, PIEZOELECTRIC MATERIAL, PIEZOELECTRIC COMPONENT, AND METHOD FOR...
A germanium-containing aluminum nitride piezoelectric film and a method for manufacturing an aluminum nitride piezoelectric film in which a ...
2016/0372652 Flexible Display
A flexible display, including: a flexible display panel; an electroactive polymer layer disposed on a side of the flexible display panel that faces away from a...
2016/0372651 CVD Nanocrystalline Silicon Thermoelectric Material
A process for forming a doped nc-Si thin film thermoelectric material. A nc-Si thin film is slowly deposited on a substrate, either by hot-wire CVD (HWCVD)...
2016/0372650 THERMOELECTRIC DEVICE FOR HIGH TEMPERATURE APPLICATIONS
A thermoelectric device may include a first substrate, a second substrate, and a plurality of thermoelectric elements positioned between the first and second...
2016/0372649 VERTICAL LIGHT EMITTING DEVICES WITH NICKEL SILICIDE BONDING AND METHODS OF MANUFACTURING
Various embodiments of light emitting devices, assemblies, and methods of manufacturing are described herein. In one embodiment, a method for manufacturing a...
2016/0372648 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a light emitting device and a method of manufacturing the same. The light emitting device includes a body, a first electrode installed in the body...
2016/0372647 LIGHT EMITTING DEVICE
A light-emitting device includes first and second lead frames spaced apart from each other, the first and second lead frames each including a top surface, an...
2016/0372646 LIGHT-EMITTING DIODE PACKAGE
An LED package includes a substrate, a light-emitting structure provided on the substrate, an electrode structure provided on the light-emitting structure, and...
2016/0372645 RESIN COMPOSITION, REFLECTOR, LEAD FRAME WITH REFLECTOR, AND SEMICONDUCTOR LIGHT-EMITTING DEVICE
A resin composition including an olefin resin, an alkenyl-containing alkoxy silane compound, and at least one inorganic filler selected from the group...
2016/0372644 METHOD OF PRODUCING LIGHT EMITTING DEVICE
A method of producing a light emitting device includes providing a light emitting element on a base member, the base member including an insulating member and...
2016/0372643 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a...
2016/0372642 LIGHT EMITTING DIODE PACKAGE AND METHOD OF MANUFACTURING THE SAME
A light-emitting diode (LED) package includes a light-emitting structure, a transmissive material layer on the light-emitting structure, and a support...
2016/0372641 POLYCARBOSILOXANE CONTAINING CURABLE COMPOSITIONS FOR LED ENCAPSULANTS
The present invention relates to curable compositions comprising specific silicon-containing polymers, at least one vinyl carbosiloxane polymer, and at least a...
2016/0372640 CURABLE RESIN COMPOSITION, OPTICAL ELEMENT AND OPTICAL SEMICONDUCTOR DEVICE
Disclosed is a curable resin composition that has significantly high transparency in the UV region, UV resistance and heat resistance, does not cause cracking,...
2016/0372639 INCANDESCENT-LIKE-DIMMING LIGHT EMITTING DIODE
Phosphor-converted light emitting diodes comprising a blue or near-UV emitting semiconductor device, a yellow-green phosphor, and a red phosphor exhibit...
2016/0372638 LIGHT EMITTING DEVICES HAVING CLOSELY-SPACED BROAD-SPECTRUM AND NARROW-SPECTRUM LUMINESCENT MATERIALS AND...
A semiconductor light emitting device includes an LED and an associated recipient luminophoric medium that includes respective first through fourth luminescent...
2016/0372637 LIGHT SOURCE AND DISPLAY DEVICE USING THE SAME
A light source for a display device, includes: a first LED chip emitting a first light having a peak located within the range of wavelengths 380 nm to 500 nm,...
2016/0372636 SEMICONDUCTOR LIGHT-EMITTING DEVICE
A semiconductor light-emitting device includes a light-emitting stack including a first conductivity-type semiconductor layer, a second conductivity-type...
2016/0372635 OPTOELECTRONIC SEMICONDUCTOR DEVICE
An optoelectronic semiconductor device comprises a substrate; a semiconductor system including a first conductivity layer, a second conductivity layer, and a...
2016/0372634 LIGHT-EMITTING DIODE PRODUCTION METHOD USING NANOSTRUCTURE TRANSFER, AND LIGHT-EMITTING DIODE OBTAINED THEREBY
A light-emitting diode having outstanding light-extraction efficiency and its production method are disclosed. A method is provided wherein a nanostructure is...
2016/0372633 ALUMINUM-GALLIUM-INDIUM-PHOSPHORUS-BASED LIGHT EMITTING DIODE HAVING GALLIUM NITRIDE LAYER OF UNEVEN TYPE AND...
The present invention relates to a light emitting diode and a method for manufacturing same, and more specifically relates to growing a GaN layer of high...
2016/0372632 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a...
2016/0372631 LIGHT EMITTING DIODE
A light emitting diode includes a GaN substrate having a C-plane as a lamination surface; an n-type GaN layer which is laminated on the GaN substrate and which...
2016/0372630 LIGHT EMITTING DIODE
A light emitting diode includes: a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor...
2016/0372629 MANUFACTURING METHOD FOR LIGHT BARRIER SUBSTRATE
The present invention provides a manufacturing method for a light barrier substrate which comprising steps of: forming a metal electrode pattern on a substrate...
2016/0372628 BOND AND RELEASE LAYER TRANSFER PROCESS
Embodiments transfer thin layers of material utilized in electronic devices (e.g., GaN for optoelectronic devices), from a donor to a handle substrate. Certain...
2016/0372627 SEMICONDUCTOR LIGHT EMITTING DEVICE
A semiconductor light emitting device includes a light emitting body that includes a light emitting layer between first and second semiconductor layers, a...
2016/0372626 IMPURITY-DIFFUSING COMPOSITION AND METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT
An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. ##STR00001## In the formula,...
2016/0372625 ADVANCED HYDROGENATION OF SILICON SOLAR CELLS
A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon...
2016/0372624 OPTOELECTRONIC DETECTORS HAVING A DILUTE NITRIDE LAYER ON A SUBSTRATE WITH A LATTICE PARAMETER NEARLY MATCHING GAAS
Optoelectronic detectors having one or more dilute nitride layers on substrates with lattice parameters matching or nearly matching GaAs are described herein....
2016/0372623 STAIRCASE AVALANCHE PHOTODIODE WITH A STAIRCASE MULTIPLICATION REGION COMPOSED OF AN AlInAsSb ALLOY
A staircase avalanche photodiode with a staircase multiplication region composed of an AlInAsSb alloy. The photodiode includes a buffer layer adjacent to a...
2016/0372622 JOSEPHSON JUNCTION READOUT FOR GRAPHENE-BASED SINGLE PHOTON DETECTOR
A detector for detecting single photons of infrared radiation. In one embodiment a waveguide configured to transmit infrared radiation is arranged to be...
2016/0372621 PHOTOCONDUCTOR FOR EMITTING AND/OR RECEIVING ELECTROMAGNETIC WAVES
The invention relates to a photoconductor for emitting and/or receiving electromagnetic waves, comprising a material region (1) comprising a first and a second...
2016/0372620 SILICON HETEROJUNCTION SOLAR CELL
The invention concerns a silicon heterojunction solar cell successively comprising: a substrate of doped crystalline silicon, a passivation layer, a layer of...
2016/0372619 LIGHT GUIDE APPARATUS AND FABRICATION METHOD THEREOF
A light guide apparatus that can redirect light impinging on the apparatus over a wide range of incident angles and can concentrate light without using a...
2016/0372618 Solar Cell Strip Assembly and Method of Making
A solar cell strip assembly includes an adhesive bearing polymer sheet, solar cell strips, and reflective strips to form a stable package suitable for...
2016/0372617 THIN FILM SOLAR CELL BACKSIDE CONTACT
Embodiments relate to a thin film solar cell backside contact. A planar substrate is provided and an associated backside of the substrate is modified to form...
2016/0372616 PHOTOVOLTAIC DEVICES WITH DEPLETED HETEROJUNCTIONS AND SHELL-PASSIVATED NANOPARTICLES
Photovoltaic cells are fabricated in which the compositions of the light-absorbing layer and the electron-accepting layer are selected such that at least one...
2016/0372615 OPTOELECTRONIC DEVICE
An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D)...
2016/0372614 HIGH-EFFICIENCY PHOTOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING SAME
The present invention relates to a photoelectric element and a method for manufacturing the same, and the photoelectric element according to the present...
2016/0372613 Thin Film Solar Cell Backside Contact Manufacturing Process
Embodiments of the invention related to a method for manufacturing a thin film solar cell backside contact. Prior to application of materials, a planar...
2016/0372612 GERMANIUM METAL-CONTACT-FREE NEAR-IR PHOTODETECTOR
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has...
2016/0372611 RADIOGRAPHIC IMAGE DETECTOR
A radiographic image detector includes a phosphor layer, a heat shield layer, and a photoelectric converter in this order, wherein the heat shield layer has a...
2016/0372610 Termination structure for gallium nitride schottky diode
A termination structure for a nitride-based Schottky diode includes a guard ring formed by an epitaxially grown P-type nitride-based compound semiconductor...
2016/0372609 SCHOTTKY BARRIER DIODE
A Schottky barrier diode includes a semiconductor layer, a Schottky electrode on a first main surface of the semiconductor layer, the Schottky electrode being...
2016/0372608 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is...
2016/0372607 STRAIN COMPENSATION IN TRANSISTORS
An embodiment includes a device comprising: a first epitaxial layer, coupled to a substrate, having a first lattice constant; a second epitaxial layer, on the...
2016/0372606 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
A semiconductor device includes a first insulating layer over a substrate, a first metal oxide layer over the first insulating layer, an oxide semiconductor...
2016/0372605 THIN-FILM TRANSISTOR ELEMENT, METHOD FOR MANUFACTURING SAME, AND DISPLAY DEVICE
A thin-film transistor includes: a gate electrode; a channel layer not adjacent to the gate electrode; a channel protection layer exposing portion of the...
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