Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
2016/0372504 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid-state imaging device includes a plurality of photoelectric conversion units, a floating diffusion unit that is shared by the plurality of photoelectric...
2016/0372503 SOLID-STATE IMAGING DEVICE AND DRIVING METHOD THEREOF, AND ELECTRONIC APPARATUS
The present technology relates to a solid-state imaging device and a driving method thereof, and an electronic apparatus that make it possible to improve the...
2016/0372502 MONOLITHIC VISIBLE-INFRARED FOCAL PLANE ARRAY ON SILICON
A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting...
2016/0372501 THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor substrate includes: a gate insulating film that covers a gate electrode and a common electrode; a transparent oxide film selectively...
2016/0372500 ETCH CHEMISTRIES FOR METALLIZATION IN ELECTRONIC DEVICES
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid,...
2016/0372499 METHOD OF MANUFACTURING ARRAY SUBSTRATE, DISPLAY SUBSTRATE, AND DISPLAY DEVICE
A method of manufacturing an array substrate, a display substrate and a display device are disclosed. The method of manufacturing an array substrate comprises:...
2016/0372498 METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE
A method of manufacturing a thin film transistor substrate includes forming a semiconductor pattern on a substrate, wherein the semiconductor pattern includes...
2016/0372497 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE USING THE SAME
A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a first TFT including a polycrystalline...
2016/0372496 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, first and second oxide semiconductor layers...
2016/0372495 Dual-Gate Array Substrate, Display Panel and Display Device
A dual-gate array substrate, a display panel and a display device are provided. The dual-gate array substrate includes a plurality of pixel unit pairs arranged...
2016/0372494 ARRAY SUBSTRATES AND THE MANUFACTURING METHOD THEREOF, AND DISPLAY PANELS
The present disclosure relates to an array substrate and the manufacturing method thereof, and a display panel. The array substrate includes a substrate and a...
2016/0372493 DUAL CHANNEL FINFET WITH RELAXED PFET REGION
Fabricating a semiconductor device includes providing a strained semiconductor material (SSM) layer disposed on a dielectric layer, forming a first plurality...
2016/0372492 SEMICONDUCTOR DEVICE
A nitride insulating film which prevents diffusion of hydrogen into an oxide semiconductor film in a transistor including an oxide semiconductor is provided....
2016/0372491 ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME, AND...
The invention discloses an array substrate, a display panel and methods of manufacturing the same, and a display device. The array substrate comprises: a pixel...
2016/0372490 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY PANEL
An array substrate and a manufacturing method thereof, and a display panel are provided. The array substrate comprises: a base substrate (1), including a...
2016/0372489 Display Panel and Method of Fabricating the Same, and Display Device
The present invention provides a display panel, a fabricating method thereof and a display device. The display panel comprises a pixel region and a fan-out...
2016/0372488 SUPPRESSING LEAKAGE CURRENTS IN A MULTI-TFT DEVICE
A technique of operating a device comprising a patterned conductor layer defining source electrode circuitry and drain electrode circuitry for a plurality of...
2016/0372487 THIN FILM TRANSISTOR AND CIRCUIT STRUCTURE
The present disclosure provides a TFT and a circuit structure to improve the characteristics of the threshold voltage drift of the TFT. The TFT includes a gate...
2016/0372486 SEMICONDUCTOR DEVICE AND METHOD FOR CONTROLLING SEMICONDUCTOR DEVICE
To provide a semiconductor device having a thin-film BOX-SOI structure and capable of realizing a high-speed operation of a logic circuit and a stable...
2016/0372485 FULLY-DEPLETED SILICON-ON-INSULATOR TRANSISTORS
A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold...
2016/0372484 METHOD FOR MANUFACTURING A HIGH-RESISTIVITY SEMICONDUCTOR-ON-INSULATOR SUBSTRATE
A method for manufacturing a high-resistivity semiconductor-on-insulator substrate comprising the steps of: a) forming a dielectric layer and a semiconductor...
2016/0372483 Passive Device and Radio Frequency Module Formed on High Resistivity Substrate
In embodiments, a radio frequency (RF) module includes an RF switching device, an RF active device, a passive device and a control device formed on a high...
2016/0372482 THREE DIMENSIONAL NAND DEVICE WITH CHANNEL CONTACTING CONDUCTIVE SOURCE LINE AND METHOD OF MAKING THEREOF
A NAND memory cell region of a NAND device includes a conductive source line that extends substantially parallel to a major surface of a substrate, a first...
2016/0372481 NON-VOLATILE MEMORY DEVICE
A non-volatile memory device includes a first conductive layer of a first conductivity type and a second conductive layer of a second conductivity type on the...
2016/0372480 MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
Provided is a memory device including a stack structure, a plurality of first cap layers, and a plurality of second cap layers. The stack structure is located...
2016/0372479 METHODS AND APPARATUSES HAVING STRINGS OF MEMORY CELLS INCLUDING A METAL SOURCE
Methods for forming a string of memory cells, an apparatus having a string of memory cells, and a system are disclosed. A method for forming the string of...
2016/0372478 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND FERROELECTRIC LAYER
A semiconductor device according to an embodiment includes a first conductive layer, a second conductive layer, and a ferroelectric layer including hafnium...
2016/0372477 SEMICONDUCTOR DEVICE
To reinforce power supply wirings without sacrificing the interconnectivity of semiconductor devices. When three wirings are formed in parallel in the same...
2016/0372476 Novel Dummy Gate Technology to Avoid Shorting Circuit
Semiconductor devices and method of manufacturing such semiconductor devices are provided for improved FinFET memory cells to avoid electric short often...
2016/0372475 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor device including a substrate, a first active region, a second active region, and a gate structure. The first...
2016/0372474 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A method of fabricating a semiconductor device includes preparing a substrate including a first region and a second region, sequentially forming a first...
2016/0372473 METHOD TO FORM DUAL CHANNEL SEMICONDUCTOR MATERIAL FINS
A silicon fin precursor is formed in an nFET device region and a fin stack comprising alternating material portions, and from bottom to top, of silicon and a...
2016/0372472 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device is provided. The semiconductor device includes a first fin-type pattern on a substrate, a first interlayer insulating layer on the...
2016/0372471 INTEGRATED CIRCUIT HAVING DUAL MATERIAL CMOS INTEGRATION AND METHOD TO FABRICATE SAME
In one aspect thereof the invention provides a structure that includes a substrate having a surface and a plurality of fins supported by the surface of the...
2016/0372470 FET TRENCH DIPOLE FORMATION
A semiconductor structure includes a layered dipole structure formed upon a fin sidewall within a fin trench. The layered dipole structure includes a dipole...
2016/0372469 INTEGRATED CIRCUITS AND MANUFACTURING METHODS THEREOF
An integrated circuit includes a first diffusion area for a first type transistor. The first type transistor includes a first drain region and a first source...
2016/0372468 FIN FIELD-EFFECT TRANSISTOR GATED DIODE
The invention provides a semiconductor device. The semiconductor device includes a fin field effect transistor (finFET) array including finFET units. Each of...
2016/0372467 SEMICONDUCTOR DEVICE
Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate...
2016/0372466 SEMICONDUCTOR DEVICE ARRANGEMENT WITH A FIRST SEMICONDUCTOR DEVICE AND WITH A PLURALITY OF SECOND SEMICONDUCTOR...
Disclosed is a semiconductor device arrangement including a first semiconductor device having a load path, and a plurality of second transistors, each having a...
2016/0372465 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING ENHANCEMENT TYPE NMOS AND DEPRESSION TYPE MOS WITH N-TYPE...
Provided is a constant voltage circuit having a stable output voltage. In a constant voltage circuit formed by connecting an enhancement type NMOS and a...
2016/0372464 High Isolation Switch
An embodiment integrated circuit includes a switch and a conductive line over the switch. The switch includes a gate, a first source/drain region at a top...
2016/0372463 HIGH QUALITY DEEP TRENCH OXIDE
An integrated circuit including a trench in the substrate with a high quality trench oxide grown on the sidewalls and the bottom of the trench where the ratio...
2016/0372462 CIRCUIT INCORPORATING MULTIPLE GATE STACK COMPOSITIONS
An exemplary integrated circuit comprises: a first device gate disposed over the first device region, the first device gate comprising a first interfacial...
2016/0372461 DISCRETE CAPACITOR AND MANUFACTURING METHOD THEREOF
A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface...
2016/0372460 SEMICONDUCTOR DEVICE
Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current...
2016/0372459 Compact Electrostatic Discharge (ESD) Protection Structure
A multi-gate Schottky depletion-mode field effect transistor (FET), at least one diode and two resistors comprise a compact electrostatic discharge (ESD)...
2016/0372458 Electrostatic Discharge Protection Device
An ESD protection device for shunting an electrostatic discharge current from a first node to a second node, and an integrated circuit including the same. The...
2016/0372457 ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT AND METHOD FOR ELECTROSTATIC DISCHARGE PROTECTION
An electrostatic discharge protection circuit is proposed comprising a series connection of a pull-up resistor and a trigger device, connecting a first and a...
2016/0372456 SEMICONDUCTOR DEVICE HAVING AN ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT
A semiconductor device includes a first well in a substrate, a gate structure on the first well, a second well below the gate structure in the first well, a...
2016/0372455 LOW VOLTAGE TRIGGERED SILICON CONTROLLED RECTIFIER WITH HIGH HOLDING VOLTAGE AND SMALL SILICON AREA
A semiconductor device includes a P-type semiconductor substrate, a first N-well, a second N-well, and a P-well adjoining the first and second N-wells, a first...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.