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Patent # Description
2016/0380157 LIGHT EMITTING DIODE HAVING DISTRIBUTED BRAGG REFLECTOR
A light-emitting diode (LED) includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first...
2016/0380156 SOLID STATE LIGHTING DEVICES WITH ACCESSIBLE ELECTRODES AND METHODS OF MANUFACTURING
Various embodiments of light emitting dies and solid state lighting ("SSL") devices with light emitting dies, assemblies, and methods of manufacturing are...
2016/0380155 LIGHT EMITTING ELEMENT AND LIGHTING DEVICE COMPRISING SAME
The present disclosure provides a light emitting element, wherein each of first and second semiconductor layers has first and second pits disposed therein,...
2016/0380154 MULTILAYER STRUCTURE CONTAINING A CRYSTAL MATCHING LAYER FOR INCREASED SEMICONDUCTOR DEVICE PERFORMANCE
A multilayer structure comprising a crystal matching layer deposited on a substrate. The crystal matching layer is capable of being used as an ohmic contact,...
2016/0380153 SUBSTRATE, METHOD OF PREPARING THE SAME, AND LIGHT-EMITTING DIODE USING THE SUBSTRATE
The present invention relates to a gallium nitride substrate, a method of preparing the gallium nitride substrate, and a double-sided light-emitting diode...
2016/0380152 NITRIDE SEMICONDUCTOR TEMPLATE AND ULTRAVIOLET LED
A nitride semiconductor template includes a Ga.sub.2O.sub.3 substrate, a buffer layer that includes as a main component AlN and is formed on the ...
2016/0380151 VERTICAL STRUCTURE LEDS
A vertical light emitting diode structure, comprising: a support structure including a support substrate and a metallic layer, the metallic layer being...
2016/0380150 Deep Ultraviolet Light Emitting Diode
A method of fabricating a light emitting diode, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer,...
2016/0380149 LIGHT EMITTING DIODE HAVING WELL AND/OR BARRIER LAYERS WITH SUPERLATTICE STRUCTURE
A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region...
2016/0380148 Integrated Multi-Color Light Emitting Device Made With Hybrid Crystal Structure
An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments...
2016/0380147 EPITAXIAL STRUCTURE AND METHOD FOR MAKING THE SAME
An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube...
2016/0380146 PRESSURIZED HEATED ROLLING PRESS FOR MANUFACTURE AND METHOD OF USE
A flexible component feeder source for providing materials to an assembly process is disclosed. The flexible component feeder source comprises a flexible base...
2016/0380145 METHODS OF FORMING HIGH-EFFICIENCY SOLAR CELL STRUCTURES
Methods for forming solar cells include forming, over a substrate, a first junction comprising at least one III-V material and having a threading dislocation...
2016/0380144 COPPER OXIDE/SILICON THIN-FILM TANDEM SOLAR CELL
A method of making a copper oxide/inorganic thin film tandem semiconductor device including the steps of: depositing a textured buffer layer on an amorphous...
2016/0380143 III-V SOLAR CELL STRUCTURE WITH MULTI-LAYER BACK SURFACE FIELD
Photovoltaic devices including direct gap III-V absorber materials and operatively associated back structures enhance efficiency by enabling photon recycling....
2016/0380142 MULTI SOLAR CELL
A multi-junction solar cell having a first subcell made of an InGaAs compound. The first subcell has a first lattice constant and A second subcell has a second...
2016/0380141 SOLAR CELL MODULE
A solar cell module includes: a first optical system which concentrates sunlight; a power generation element which performs photoelectric conversion; a glass...
2016/0380140 COLORLESS LUMINESCENT SOLAR CONCENTRATORS USING COLLOIDAL SEMICONDUCTOR NANOCRYSTALS
Disclosed herein are embodiments of a composition comprising a polymer or sol-gel and one or more nanocrystals. The composition is useful as a luminescent...
2016/0380139 THIN FILM PHOTOVOLTAIC CELL WITH BACK CONTACTS
Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to...
2016/0380138 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a semiconductor substrate having a first conductivity type, an emitter layer on a surface of the semiconductor substrate, the emitter...
2016/0380137 LIGHT-RECEIVING DEVICE
A light-receiving device includes: a group III-V compound semiconductor substrate having a first main surface; and a light-receiving layer formed on the first...
2016/0380136 QUANTUM-DOT-IN-PEROVSKITE SOLIDS
The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or...
2016/0380135 OHMIC CONTACT OF THIN FILM SOLAR CELL
A chalcogen-resistant material including at least one of a conductive elongated nanostructure layer and a high work function material layer is deposited on a...
2016/0380134 WIRE-BASED METALLIZATION FOR SOLAR CELLS
Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a...
2016/0380133 THIN FILM PHOTOVOLTAIC CELL WITH BACK CONTACTS
Photovoltaic cells, photovoltaic devices, and methods of fabrication are provided. The photovoltaic cells include a transparent substrate to allow light to...
2016/0380132 ONE-DIMENSIONAL METALLIZATION FOR SOLAR CELLS
Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a...
2016/0380131 SHIELDED ELECTRICAL CONTACT AND DOPING THROUGH A PASSIVATING DIELECTRIC LAYER IN A HIGH-EFFICIENCY CRYSTALLINE...
Solar cell structures and formation methods which utilize the surface texture in conjunction with a passivating dielectric layer to provide a practical and...
2016/0380130 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a solar cell, the method including: preparing a semiconductor substrate; ion-implanting a pre-amorphization element to form an...
2016/0380129 CONDUCTIVE THICK FILM PASTE FOR SOLAR CELL CONTACTS
The present invention relates to an inorganic reaction system used in the manufacture of electroconductive pastes. The inorganic reaction system comprises a...
2016/0380128 Thermal Compression Bonding Approaches for Foil-Based Metallization of Solar Cells
Thermal compression bonding approaches for foil-based metallization of solar cells, and the resulting solar cells, are described. For example, a method of...
2016/0380127 Leave-In Etch Mask for Foil-Based Metallization of Solar Cells
Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example,...
2016/0380126 MULTI-LAYER BARRIER FOR METALLIZATION
A solar cell can include a substrate, a semiconductor region disposed in or above the substrate, and a conductive stack that includes a first conductive...
2016/0380125 PHOTOVOLTAIC DEVICE COMPRISING A METAL HALIDE PEROVSKITE AND A PASSIVATING AGENT
The present invention relates to devices comprising metal halide perovskites and organic passivating agents. In particular, the invention relates to...
2016/0380124 SURFACE PASSIVATION FOR SOLAR CELLS
Methods of fabricating a solar cell, and resulting solar cell are described. In an example, the method for fabricating a solar cell include forming an oxide...
2016/0380123 MULTILAYER THIN-FILM BACK CONTACT SYSTEM FOR FLEXIBLE PHOTOVOLTAIC DEVICES ON POLYMER SUBSTRATES
A photovoltaic element includes a polymer substrate having opposing device and back sides, and having a coefficient of thermal expansion of at least 4 parts...
2016/0380122 ETCHING TECHNIQUES FOR SEMICONDUCTOR DEVICES
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the...
2016/0380121 GRAPHENE PHOTODETECTOR AND GRAPHENE OPTICAL MODULATOR
According to one embodiment, a graphene photodetector includes a substrate, a first insulating film, first and second high-refractive-index regions, first and...
2016/0380120 METALLIZATION AND STRINGING FOR BACK-CONTACT SOLAR CELLS
Metallization and stringing methods for back-contact solar cells, and resulting solar cells, are described. In an example, in one embodiment, a method involves...
2016/0380119 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A first nitride semiconductor layer of a semiconductor device is provided on a substrate, a second nitride semiconductor layer is provided on the first nitride...
2016/0380118 INTEGRATED CANTILEVER SWITCH
An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale...
2016/0380117 Trench Vertical JFET With Improved Threshold Voltage Control
Trench JFETs may be created by etching trenches into the topside of a substrate of a first doping type to form mesas. The substrate is made up of a backside...
2016/0380116 METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes a first step of forming a fin-shaped semiconductor layer on a semiconductor substrate and forming a...
2016/0380115 THIN FILM TRANSISTOR, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR
A thin film transistor includes semiconductor layer, source electrode, and drain electrode. The semiconductor layer includes first to fifth regions. The third...
2016/0380114 THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor, an array substrate and a display device are provided by the present disclosure. The thin film transistor is on a base substrate, a...
2016/0380113 THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME AND LIQUID CRYSTAL DISPLAY APPARATUS HAVING THE SAME
A thin film transistor includes a substrate, a gate electrode disposed on the substrate, an active pattern disposed on the gate electrode, a source electrode...
2016/0380112 DIFFERENT LIGHTLY DOPED DRAIN LENGTH CONTROL FOR SELF-ALIGN LIGHT DRAIN DOPING PROCESS
A method is provided for fabricating thin-film transistors (TFTs) for an LCD having an array of pixels. The method includes depositing a first photoresist...
2016/0380111 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn...
2016/0380110 DISPLAY PANEL
A display panel is disclosed, which comprises: a substrate; a gate electrode disposed on the substrate; a gate insulation layer disposed on the substrate and...
2016/0380109 TRANSISTOR HAVING HARD-MASK LAYERS
A method for fabricating a transistor including the following steps is provided. First, a gate electrode is formed on a substrate, and a gate insulating layer...
2016/0380108 SEMICONDUCTOR DEVICE
A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer...
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