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Patent # Description
2017/0005205 HIGH VOLTAGE JUNCTION FIELD EFFECT TRANSISTOR
Provided is a semiconductor device, including: a substrate, a well region of a first conductivity type, a field region of a second conductivity type, a first...
2017/0005204 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is...
2017/0005203 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A miniaturized transistor is provided. A first layer is formed over a third insulator over a semiconductor; a second layer is formed over the first layer; an...
2017/0005202 SEMICONDUCTOR DEVICE
A semiconductor device having stable electric characteristics is provided. The transistor includes first to third oxide semiconductor layers, a gate electrode,...
2017/0005201 SEMICONDUCTOR DEVICE
Stable electrical characteristics and high reliability are provided for a semiconductor device including an oxide semiconductor. In a transistor including an...
2017/0005200 SEMICONDUCTOR DEVICE
A semiconductor device includes a first transistor including a first electrode, a first insulating layer above the first electrode, the first insulating layer...
2017/0005199 THIN-FILM TRANSISTOR AND METHOD FOR FORMING THE SAME
A thin-film transistor comprises a substrate, a first electrode on the top surface of the substrate, an insulation layer on the top surface of the substrate...
2017/0005198 THIN FILM TRANSISTOR, METHOD OF PRODUCING THE SAME AND ARRAY SUBSTRATE
The present disclosure provides a method for producing a thin film transistor. The method includes the steps of: forming a protective layer on an active layer...
2017/0005197 FIN FIELD EFFECT TRANSISTOR AND FABRICATING METHOD THEREOF
In accordance with various embodiments of the disclosed subject matter, a fin field effect transistor and a fabricating method thereof are provided. In some...
2017/0005196 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is...
2017/0005195 MULTI-GATE DEVICE AND METHOD OF FABRICATION THEREOF
A method of semiconductor device fabrication is described that includes forming a fin extending from a substrate and having a source/drain region and a channel...
2017/0005194 Ultra High Voltage Device
According to an embodiment, a semiconductor device is provided. The device includes: The second region has a greater curvature than the first region. The...
2017/0005193 Lateral DMOS Device with Dummy Gate
An LDMOS transistor with a dummy gate comprises an extended drift region over a substrate, a drain region in the extended drift region, a channel region in the...
2017/0005192 Semiconductor Device and Methods for Forming a Semiconductor Device
A semiconductor device includes a plurality of compensation regions of a vertical electrical element arrangement, a plurality of drift regions of the vertical...
2017/0005191 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a...
2017/0005190 LOCAL GERMANIUM CONDENSATION FOR SUSPENDED NANOWIRE AND FINFET DEVICES
A semiconductor wafer is provided, where the semiconductor wafer includes a semiconductor substrate and a hard mask layer formed on the semiconductor...
2017/0005189 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a first semiconductor layer, a second semiconductor layer formed over the first semiconductor layer, a third semiconductor...
2017/0005188 INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WIRE-LAST REPLACEMENT GATE-ALL-AROUND NANOWIRE FET
A semiconductor device includes a first source/drain region a second source/drain region, and a gate region interposed between the first and second...
2017/0005187 FIN-BASED SEMICONDUCTOR DEVICES AND METHODS
Embodiments of semiconductor devices, integrated circuit devices and methods are disclosed. In some embodiments, a semiconductor device may include a first fin...
2017/0005186 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer and a trench gate portion that extends toward a deep portion from a front surface of the semiconductor...
2017/0005185 Semiconductor Device and Manufacturing Method Thereof
A semiconductor device includes a first trench gate electrode and a second trench gate electrode which are electrically connected to a gate electrode, and a...
2017/0005184 BIPOLAR TRANSISTOR HAVING COLLECTOR WITH DOPING SPIKE
This disclosure relates to bipolar transistors, such as heterojunction bipolar transistors, having at a doping spike in the collector. The doping spike can be...
2017/0005183 TRENCHED AND IMPLANTED BIPOLAR JUNCTION TRANSISTOR
The present invention concerns a monolithically merged trenched-and-implanted Bipolar Junction Transistor (TI-BJT) with antiparallel diode and a method of...
2017/0005182 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device including an oxide semiconductor with stable electric characteristics and high reliability is provided. An island-shaped oxide...
2017/0005181 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF
A semiconductor device includes first fin-shaped structures and second fin-shaped structures, which are separately disposed on a semiconductor substrate. Each...
2017/0005180 INTERNAL SPACER FORMATION FROM SELECTIVE OXIDATION FOR FIN-FIRST WIRE-LAST REPLACEMENT GATE-ALL-AROUND NANOWIRE FET
A semiconductor device includes a first source/drain region a second source/drain region, and a gate region interposed between the first and second...
2017/0005179 METHOD TO IMPROVE RELIABILITY OF REPLACEMENT GATE DEVICE
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k...
2017/0005178 Semiconductor Device and Method of Manufacture
A semiconductor device and method of manufacturing a semiconductor device using a semiconductor fin is provided. In an embodiment the fin is formed from a...
2017/0005177 FINFET HAVING HIGHLY DOPED SOURCE AND DRAIN REGIONS
A method of forming a semiconductor device that includes forming an in-situ doped semiconductor material on a semiconductor substrate, and forming fin...
2017/0005176 SELECTIVE ETCHING FOR GATE ALL AROUND ARCHITECTURES
The present disclosure relates to a method of etching sacrificial material. The method includes supplying a semiconductor substrate in a reaction chamber,...
2017/0005175 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes a semiconductor substrate including multiple active regions having a common conductivity type and separate, respective gate...
2017/0005174 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Provided is a method of manufacturing a semiconductor device, for suppressing channeling that may occur during ion implantation to a polycrystalline silicon...
2017/0005173 Fully-Depleted SOI MOSFET with U-Shaped Channel
A method of forming a MOSFET device is provided including: providing an SOI wafer; forming a dummy gate oxide and dummy gates on portions of the SOI layer that...
2017/0005172 Electro-Mechanical Switching Devices
A switching device includes an opening disposed in a substrate. A source is disposed adjacent the opening and has a contact surface parallel to sidewalls of...
2017/0005171 Semiconductor Device Including a Contact Structure Directly Adjoining a Mesa Section and a Field Electrode
A semiconductor device includes a gate structure that extends from a first surface into a semiconductor portion and that surrounds a transistor section of the...
2017/0005170 Semiconductor Composition Containing Iron, Dysprosium, and Terbium
An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X,...
2017/0005169 METHOD OF USING A SACRIFICAL GATE STRUCTURE TO MAKE A METAL GATE FINFET TRANSISTOR
A self-aligned SiGe FinFET device features a relaxed channel region having a high germanium concentration. Instead of first introducing germanium into the...
2017/0005168 Nanowire Semiconductor Device Structure and Method of Manufacturing
A nanowire comprises a source region, a drain region and a channel region. The source region is modified to reduce the lifetime of minority carriers within the...
2017/0005167 UNDERCUT INSULATING REGIONS FOR SILICON-ON-INSULATOR DEVICE
A method of making a silicon-on-insulator (SOI) semiconductor device includes etching an undercut isolation trench into an SOI substrate, the SOI substrate...
2017/0005166 SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME
A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first...
2017/0005165 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A FinFET device structure and method for forming the same are provided. The fin field effect transistor (FinFET) device structure includes a fin structure...
2017/0005164 CHARGE COMPENSATION DEVICE AND MANUFACTURING THEREFOR
A charge-compensation semiconductor device includes a semiconductor body having a first surface, a lateral edge delimiting the semiconductor body in a...
2017/0005163 Power Semiconductor Device Edge Structure
A semiconductor device having a first load terminal, a second load terminal and a semiconductor body is presented. The semiconductor body comprises an active...
2017/0005162 SEMICONDUCTOR DEVICES
Semiconductor devices include a channel layer on a substrate, the channel layer including a material having a lattice constant different from a lattice...
2017/0005161 METHOD FOR FABRICATING CAPACITOR
A method for fabricating a capacitor includes following steps: providing a substrate and a first conducting material layer which is disposed on the substrate;...
2017/0005160 ANCHORING CONDUCTIVE MATERIAL IN SEMICONDUCTOR DEVICES
Copper (Cu) grain boundaries can move during a thermal cycle resulting in the Cu grain position being offset. Such Cu pumping can disturb the surface of a...
2017/0005159 EMBEDDED METAL-INSULATOR-METAL CAPACITOR
A semiconductor device includes a first metallization layer including a first dielectric layer. A first conductive layer and a first conductive structure are...
2017/0005158 Organic Light Emitting Diode Display Device and Method of Fabricating the Same
An organic light emitting diode display device comprises a substrate including a pixel region, the pixel region including a first portion and a second portion,...
2017/0005157 ORGANIC LIGHT EMITTING DISPLAY APPARATUS
An organic light emitting display apparatus includes a substrate, an encapsulation member facing the substrate, a plurality of pixels between the substrate and...
2017/0005156 ORGANIC LIGHT-EMITTING DIODE DISPLAY
An organic light-emitting diode (OLED) display is disclosed. In one aspect, the display includes a substrate including a display area configured to display an...
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