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Patent # Description
2017/0012167 LIGHT-EMITTING DEVICES
A light-emitting device comprises a semiconductor layer sequence comprising a first semiconductor layer having a first electrical conductivity, a second...
2017/0012166 SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Provided is a semiconductor light emitting element formed by growing an active layer in the c-axis direction and having a peak emission wavelength of at least...
2017/0012165 METHOD OF PRODUCING A SEMICONDUCTOR LAYER SEQUENCE AND AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT
A method of producing a semiconductor layer sequence includes providing a growth substrate having a growth surface on a growth side, growing a first nitride...
2017/0012164 METHOD OF FORMING ELECTRODE PATTERN AND METHOD OF MANUFACTURING SOLAR CELL
A method of forming an electrode pattern includes: forming, on a base material, a seed layer having a pattern corresponding to the electrode pattern; forming...
2017/0012163 ASSEMBLY AND MOUNTING OF SOLAR CELLS ON SPACE VEHICLES OR SATELLITES
Solar cell array assemblies or modules and methods of making and using such solar cell array assemblies or modules, having discrete predefined pressure...
2017/0012162 DUAL MODE III-V SUPERLATTICE AVALANCHE PHOTODIODE
In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply...
2017/0012161 HYBRID POLYSILICON HETEROJUNCTION BACK CONTACT CELL
A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on...
2017/0012160 ASSEMBLY AND MOUNTING OF SOLAR CELLS ON SPACE PANELS
The present disclosure provides a method of fabricating a solar cell panel in an automated process by applying an adhesive pattern to a support, positioning a...
2017/0012159 Photovoltaic Material and Use of it in a Photovoltaic Device
The present invention relates to a photovoltaic material and a photovoltaic device comprising the photoactive material arranged between a hole transport layer...
2017/0012158 PHOTOVOLTAIC PLANT
Described herein is a photovoltaic plant (1; 1'; 1''; 1''') including a plurality of photovoltaic modules (PV) arranged in arrays (2) spaced with respect to...
2017/0012157 SPECTRAL LIGHT SPLITTING MODULE AND PHOTOVOLTAIC SYSTEM
A light splitting optical module that converts incident light into electrical energy, the module including a solid optical element comprising an input end for...
2017/0012156 SOLAR CELL MODULE
A solar cell module includes a plurality of solar cells, each solar cell including a semiconductor substrate, an emitter region, a back surface field region a...
2017/0012155 SYSTEM AND METHOD FOR MANIPULATING SOLAR ENERGY
An apparatus for generating electricity from solar radiation having a solar spectrum is provided. The apparatus includes a photovoltaic mirror comprising a...
2017/0012154 METHOD FOR PRODUCING SOLAR CELLS AND SOLAR CELL ASSEMBLIES
Solar cells are obtained by singulating a non-rectangular solar cell wafer into a plurality of solar cells, in one embodiment a first solar cell having a...
2017/0012153 IN-CELL BYPASS DIODE
A solar cell can include a built-in bypass diode. In one embodiment, the solar cell can include an active region disposed in or above a first portion of a...
2017/0012152 MODULE ASSEMBLY FOR THIN SOLAR CELLS
Solar cells are packaged by placing the solar cells between sheets of encapsulants. The encapsulants are exposed to ultraviolet (UV) light to cure the...
2017/0012151 MULTILAYER TRANSPARENT POLYESTER FILM, METHOD FOR MANUFACTURING SAID FILM AND USE OF SAID FILM IN PARTICULAR IN...
A biaxially oriented multilayer transparent film including at least two layers of polyester, respectively a core layer and at least one outer layer, which can...
2017/0012150 SUBSTRATE AND ELECTRONIC DEVICE
A substrate includes: a base member that has flexibility and insulation properties; an electrically conductive member that is disposed on a top surface of the...
2017/0012149 HIGH EFFICIENCY SINGLE CRYSTAL SILICON SOLAR CELL WITH EPITAXIALLY DEPOSITED SILICON LAYERS WITH DEEP JUNCTION(S)
Embodiments of the present invention may include single crystal silicon solar cell structures with epitaxially deposited silicon device layers with deep...
2017/0012148 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Disclosed is method of manufacturing a solar cell including forming a barrier film over at least one surface of a semiconductor substrate or a semiconductor...
2017/0012147 METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE
The present disclosure relates to a transparent electrode, and provides a method for manufacturing a transparent electrode, the method comprising forming a...
2017/0012146 SOLAR CELL MODULE
A solar cell module includes a plurality of solar cells each including a semiconductor substrate, an emitter region forming a p-n junction along with the...
2017/0012145 METHOD FOR ROUGHENING SILICON SUBSTRATE SURFACE
A method for roughening silicon substrate surface includes providing a silicon substrate having a waiting-for-etching surface, the waiting-for-etching surface...
2017/0012144 SOLAR CELL AND SOLAR CELL MODULE
A solar cell is provided with: a semiconductor substrate having a main surface; a plurality of first electrodes disposed so as to be aligned in one direction...
2017/0012143 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A germanium optical receiver in which a dark current is small is achieved. The germanium optical receiver is formed of a p-type germanium layer, a non-doped...
2017/0012142 PRINTED CIRCUIT BOARD ASSEMBLY FORMING ENHANCED FINGERPRINT MODULE
A Printed Circuit Board Assembly (PCBA) forming an enhanced fingerprint module is disclosed. The PCBA includes a Printed Circuit Board (PCB), an image sensing...
2017/0012141 SOLAR CELL MODULE AND SOLAR CELL
A solar cell includes: a first bus bar electrode disposed on a first end portion of the solar cell, and to which the wiring member is connected; a second bus...
2017/0012140 DIODE
A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and...
2017/0012139 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A minute transistor is provided. A transistor with small parasitic capacitance is provided. A transistor with high frequency characteristics is provided. A...
2017/0012138 SEMICONDUCTOR DEVICE
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small...
2017/0012137 Method for Manufacturing Semiconductor Device and Manufacturing Apparatus of Semiconductor Device
A semiconductor device including an oxide semiconductor and an organic resin film is manufactured in the following manner. Heat treatment is performed on a...
2017/0012136 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A terminal structure includes: a first trench extending along a depth direction from an upper surface of a semiconductor substrate; a plurality of second...
2017/0012135 SEMICONDUCTOR DEVICE
Provided is a semiconductor device having a structure with which a decrease in electrical characteristics that becomes more significant with miniaturization...
2017/0012134 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A manufacturing method of a semiconductor device includes forming an oxide semiconductor layer on an insulating layer, a part of the insulating layer being...
2017/0012133 OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE
There is provided an oxide semiconductor film composed of nanocrystalline oxide or amorphous oxide, wherein the oxide semiconductor film includes indium,...
2017/0012132 SEMICONDUCTOR DEVICE HAVING A NECKED SEMICONDUCTOR BODY AND METHOD OF FORMING SEMICONDUCTOR BODIES OF VARYING...
Semiconductor devices having necked semiconductor bodies and methods of forming semiconductor bodies of varying width are described. For example, a...
2017/0012131 FINFET STRUCTURE
A FinFET device includes a substrate and a fin structure having a semiconductor material layer over the substrate and recessed regions on side walls of the fin...
2017/0012130 LARGE AREA CONTACTS FOR SMALL TRANSISTORS
A large area electrical contact for use in integrated circuits features a non-planar, sloped bottom profile. The sloped bottom profile provides a larger...
2017/0012129 INCREASED CONTACT AREA FOR FINFETS
A method for forming fin field effect transistors includes epitaxially growing source and drain (S/D) regions on fins, the S/D regions including a...
2017/0012128 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In a method for manufacturing a semiconductor device, a fin structure including a first semiconductor layer, an oxide layer disposed over the first...
2017/0012127 SEMICONDUCTOR DEVICE WITH FIN AND RELATED METHODS
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the...
2017/0012126 SELECTIVELY REGROWN TOP CONTACT FOR VERTICAL SEMICONDUCTOR DEVICES
Vertical semiconductor devices having selectively regrown top contacts and method of fabricating vertical semiconductor devices having selectively regrown top...
2017/0012125 ASPECT RATIO TRAPPING (ART) FOR FABRICATING VERTICAL SEMICONDUCTOR DEVICES
Aspect ratio trapping (ART) approaches for fabricating vertical semiconductor devices and vertical semiconductor devices fabricated there from are described....
2017/0012124 TECHNIQUES FOR INTEGRATION OF GE-RICH P-MOS SOURCE/DRAIN CONTACTS
Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques...
2017/0012123 SEMICONDUCTOR DEVICE
A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a...
2017/0012122 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in...
2017/0012121 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
A technique achieving a higher voltage resistance by a depletion layer extending quickly within a circumferential region is provided. A semiconductor device...
2017/0012120 STRUCTURE TO ENABLE TITANIUM CONTACT LINER ON pFET SOURCE/DRAIN REGIONS
A semiconductor structure is provided that includes non-metal semiconductor alloy containing contact structures for field effect transistors (FETs),...
2017/0012119 SILICON-CARBIDE TRENCH GATE MOSFETS
In a general aspect, an apparatus can include a silicon carbide (SiC) trench gate MOSFET with improved operation due, at least in part, to a reduced gate...
2017/0012118 SEMICONDUCTOR DEVICE WITH NON-UNIFORM TRENCH OXIDE LAYER
A semiconductor device includes a trench formed in an epitaxial layer and an oxide layer that lines the sidewalls of the trench. The thickness of the oxide...
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