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METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device includes measuring a light distribution of a light-emitting element, sealing the measured light-emitting...
METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH SELECTIVE DOPING
A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements;...
METHOD FOR PRODUCING SOLAR CELLS HAVING SIMULTANEOUSLY ETCHED-BACK DOPED
A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a...
MULTI-JUNCTION PHOTOVOLTAIC MICRO-CELL ARCHITECTURES FOR ENERGY HARVESTING
AND/OR LASER POWER CONVERSION
An optical power converter device includes a light source configured to emit monochromatic light, and a multi-junction photovoltaic cell including respective...
SEMICONDUCTOR DEVICE FOR A SYSTEM FOR MEASURING THE TEMPERATURE, AND
MANUFACTURING METHOD THEREOF
A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors...
URANIUM OXIDE SOLAR CELLS
Solar cells including thin film depleted uranium oxide (DUO) may be produced using an ion beam assisted deposition (IBAD) process, for example. p-type DUO film...
HIGH POWER SOLAR CELL MODULE
A high power solar cell module including a cover plate, a back plate, a first encapsulant, a second encapsulant, a plurality of P type passivated emitter rear...
SOLAR CELL AND SOLAR CELL MODULE
A solar cell and a solar cell module are disclosed. The solar cell includes a semiconductor substrate, an emitter region extending in a first direction, a back...
Photovoltaic module with bypass diodes
Photovoltaic module with a back side conductive substrate (10) and a plurality of PV-cells (2) having back contacts and being arranged in an array on a top...
COMPOSITE QUANTUM-DOT MATERIALS FOR PHOTONIC DETECTORS
A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film...
BACK-CONTACT SI THIN-FILM SOLAR CELL
A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which...
THICK DAMAGE BUFFER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal...
FORMATION OF HOMOJUNCTION IN KESTERITE-BASED SEMICONDUCTORS
Kesterite-based homojunction photovoltaic devices are provided. The photovoltaic devices include a p-type semiconductor layer including a copper-zinc-tin...
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL MODULE
A solar cell module includes a plurality of solar cells comprising a first solar cell and a second solar cell adjacent to each other; a conductive ribbon,...
MIRRORS INCLUDING REFLECTIVE AND SECOND LAYERS DISPOSED ON PHOTODETECTORS
An example device in accordance with an aspect of the present disclosure includes a photodetector disposed on a substrate, and a mirror disposed on the...
SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate;...
PHOTOACTIVE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A PHOTOACTIVE
The invention relates to a photoactive semiconductor component, especially a photovoltaic solar cell, having a semiconductor substrate, a carbon-containing SiC...
GRAIN GROWTH FOR SOLAR CELLS
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions...
METHOD OF MANUFACTURING A CIRCUIT BOARD BY PUNCHING
A method of manufacturing a circuit board includes: forming a plurality of metal electrodes so as to be separated from each other on a holding sheet by cutting...
For enhancing a reverse-recovery immunity of a diode element, a semiconductor device includes a first conductivity-type drift layer, a second conductivity-type...
SOLID-SOURCE DIFFUSED JUNCTION FOR FIN-BASED ELECTRONICS
A solid source-diffused junction is described for fin-based electronics. In one example, a fin is formed on a substrate. A glass of a first dopant type is...
VERTICAL JFET MADE USING A REDUCED MASK SET
A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions...
FIELD EFFECT TRANSISTOR
An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and...
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a ...
THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group...
TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT substrate structure and a manufacturing method thereof. The TFT substrate structure of the present invention includes an...
P-SI TFT AND METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND METHOD
FOR FABRICATING THE SAME, AND DISPLAY...
A method for fabricating a Polysilicon Thin-Film Transistor is provided. The method includes forming a polysilicon active layer, forming a first gate...
TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT substrate structure and a manufacturing method thereof. A metal oxide semiconductor layer is formed on an amorphous...
FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source...
METHOD FOR FABRICATING A FLASH MEMORY
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a dielectric stack is formed on the substrate, in which the...
Semiconductor Device and Method for Manufacturing the Same
The electrical characteristics of a transistor including an oxide semiconductor layer are varied by influence of an insulating film in contact with the oxide...
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC
A semiconductor device with reduced parasitic capacitance is provided. A stack is formed on an insulating layer, the stack comprising a first oxide insulating...
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the...
METHODS OF FABRICATING SEMICONDUCTOR DEVICES
Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active...
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device is provided. A fin is disposed on a substrate. The fin, including a first material and a second material, includes a first fin area and...
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device provided herein includes: a fourth region of a p-type being in contact with a lower end of the gate trench; a termination trench...
A semiconductor device includes a first conductivity type region provided to at least one of a second conductivity type column region and a second conductivity...
FinFET Device For Device Characterization
FinFET devices, along with methods for fabricating such devices, are disclosed herein for facilitating device characterization. An exemplary FinFET device...
III-N TRANSISTORS WITH ENHANCED BREAKDOWN VOLTAGE
Techniques related to III-N transistors having enhanced breakdown voltage, systems incorporating such transistors, and methods for forming them are discussed....
Semiconductor Device with Multiple-Functional Barrier Layer
A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the semiconductor structure,...
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes: a drift layer of a first conductivity type, implementing a main semiconductor layer; a base region of a second conductivity...
A semiconductor device is provided comprising a semiconductor substrate of a first conductivity type and a dummy trench portion having a main body portion and...
An improvement is achieved in the reliability of a semiconductor device having an IGBT. In an active cell region, in a portion of a semiconductor substrate...
We disclose herein a method of manufacturing a silicon carbide (SiC) based insulated gate bipolar transistor (IGBT), the IGBT comprising: a monocrystalline...
Desaturable Semiconductor Device with Transistor Cells and Auxiliary Cells
A semiconductor device includes transistor cells that connect a first load electrode with a drift structure forming first pn junctions with body zones when a...
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND
METHOD FOR FORMING OXIDE FILM
One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the...
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved....
SILICON GERMANIUM FIN CHANNEL FORMATION
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an...
Fin Structure of Semiconductor Device
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure...
GATE CUT WITH HIGH SELECTIVITY TO PRESERVE INTERLEVEL DIELECTRIC LAYER
A method for preserving interlevel dielectric in a gate cut region includes recessing a dielectric fill to expose cap layers of gate structures formed in a...