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Patent # Description
2017/0018678 METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE
A method of manufacturing a light-emitting device includes measuring a light distribution of a light-emitting element, sealing the measured light-emitting...
2017/0018677 METHOD FOR MANUFACTURING A PHOTOVOLTAIC CELL WITH SELECTIVE DOPING
A method for creating a photovoltaic cell, includes forming a first doped region in a semiconductor substrate having a first concentration of doping elements;...
2017/0018676 METHOD FOR PRODUCING SOLAR CELLS HAVING SIMULTANEOUSLY ETCHED-BACK DOPED REGIONS
A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a...
2017/0018675 MULTI-JUNCTION PHOTOVOLTAIC MICRO-CELL ARCHITECTURES FOR ENERGY HARVESTING AND/OR LASER POWER CONVERSION
An optical power converter device includes a light source configured to emit monochromatic light, and a multi-junction photovoltaic cell including respective...
2017/0018674 SEMICONDUCTOR DEVICE FOR A SYSTEM FOR MEASURING THE TEMPERATURE, AND MANUFACTURING METHOD THEREOF
A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors...
2017/0018673 URANIUM OXIDE SOLAR CELLS
Solar cells including thin film depleted uranium oxide (DUO) may be produced using an ion beam assisted deposition (IBAD) process, for example. p-type DUO film...
2017/0018672 HIGH POWER SOLAR CELL MODULE
A high power solar cell module including a cover plate, a back plate, a first encapsulant, a second encapsulant, a plurality of P type passivated emitter rear...
2017/0018671 SOLAR CELL AND SOLAR CELL MODULE
A solar cell and a solar cell module are disclosed. The solar cell includes a semiconductor substrate, an emitter region extending in a first direction, a back...
2017/0018670 Photovoltaic module with bypass diodes
Photovoltaic module with a back side conductive substrate (10) and a plurality of PV-cells (2) having back contacts and being arranged in an array on a top...
2017/0018669 COMPOSITE QUANTUM-DOT MATERIALS FOR PHOTONIC DETECTORS
A composite quantum-dot photodetector comprising a substrate with a colloidally deposited thin film structure forming a photosensitive region, the thin film...
2017/0018668 BACK-CONTACT SI THIN-FILM SOLAR CELL
A back-contact Si thin-film solar cell includes a crystalline Si absorber layer and an emitter layer arranged on the crystalline Si absorber layer, which...
2017/0018667 THICK DAMAGE BUFFER FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal...
2017/0018666 FORMATION OF HOMOJUNCTION IN KESTERITE-BASED SEMICONDUCTORS
Kesterite-based homojunction photovoltaic devices are provided. The photovoltaic devices include a p-type semiconductor layer including a copper-zinc-tin...
2017/0018665 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME, AND SOLAR CELL MODULE
A solar cell module includes a plurality of solar cells comprising a first solar cell and a second solar cell adjacent to each other; a conductive ribbon,...
2017/0018664 MIRRORS INCLUDING REFLECTIVE AND SECOND LAYERS DISPOSED ON PHOTODETECTORS
An example device in accordance with an aspect of the present disclosure includes a photodetector disposed on a substrate, and a mirror disposed on the...
2017/0018663 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME
A solar cell includes a substrate; a first passivation layer on a first surface of the substrate; a first field region on the first surface of the substrate;...
2017/0018662 PHOTOACTIVE SEMICONDUCTOR COMPONENT AND METHOD FOR PRODUCING A PHOTOACTIVE SEMICONDUCTOR COMPONENT
The invention relates to a photoactive semiconductor component, especially a photovoltaic solar cell, having a semiconductor substrate, a carbon-containing SiC...
2017/0018661 GRAIN GROWTH FOR SOLAR CELLS
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions...
2017/0018660 METHOD OF MANUFACTURING A CIRCUIT BOARD BY PUNCHING
A method of manufacturing a circuit board includes: forming a plurality of metal electrodes so as to be separated from each other on a holding sheet by cutting...
2017/0018659 SEMICONDUCTOR DEVICE
For enhancing a reverse-recovery immunity of a diode element, a semiconductor device includes a first conductivity-type drift layer, a second conductivity-type...
2017/0018658 SOLID-SOURCE DIFFUSED JUNCTION FOR FIN-BASED ELECTRONICS
A solid source-diffused junction is described for fin-based electronics. In one example, a fin is formed on a substrate. A glass of a first dopant type is...
2017/0018657 VERTICAL JFET MADE USING A REDUCED MASK SET
A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions...
2017/0018656 FIELD EFFECT TRANSISTOR
An insulating film is provided over one surface of a first semiconductor layer including a first oxide semiconductor including indium as a main component, and...
2017/0018655 SEMICONDUCTOR DEVICE
A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a ...
2017/0018654 THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A thin-film transistor and a manufacturing method thereof are characterized in that: the active layer is a group IV-VI compound semiconductor film; the group...
2017/0018653 TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT substrate structure and a manufacturing method thereof. The TFT substrate structure of the present invention includes an...
2017/0018652 P-SI TFT AND METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME, AND DISPLAY...
A method for fabricating a Polysilicon Thin-Film Transistor is provided. The method includes forming a polysilicon active layer, forming a first gate...
2017/0018651 TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT substrate structure and a manufacturing method thereof. A metal oxide semiconductor layer is formed on an amorphous...
2017/0018650 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source...
2017/0018649 METHOD FOR FABRICATING A FLASH MEMORY
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, and a dielectric stack is formed on the substrate, in which the...
2017/0018648 Semiconductor Device and Method for Manufacturing the Same
The electrical characteristics of a transistor including an oxide semiconductor layer are varied by influence of an insulating film in contact with the oxide...
2017/0018647 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
A semiconductor device with reduced parasitic capacitance is provided. A stack is formed on an insulating layer, the stack comprising a first oxide insulating...
2017/0018646 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
A semiconductor device includes a thin film transistor (100), the thin film transistor (100) including: a substrate (1); a gate electrode (3) provided on the...
2017/0018645 METHODS OF FABRICATING SEMICONDUCTOR DEVICES
Methods of forming a semiconductor device may include forming a fin-type active pattern that extends in a first direction on a substrate, the fin-type active...
2017/0018644 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device is provided. A fin is disposed on a substrate. The fin, including a first material and a second material, includes a first fin area and...
2017/0018643 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device provided herein includes: a fourth region of a p-type being in contact with a lower end of the gate trench; a termination trench...
2017/0018642 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductivity type region provided to at least one of a second conductivity type column region and a second conductivity...
2017/0018641 FinFET Device For Device Characterization
FinFET devices, along with methods for fabricating such devices, are disclosed herein for facilitating device characterization. An exemplary FinFET device...
2017/0018640 III-N TRANSISTORS WITH ENHANCED BREAKDOWN VOLTAGE
Techniques related to III-N transistors having enhanced breakdown voltage, systems incorporating such transistors, and methods for forming them are discussed....
2017/0018638 Semiconductor Device with Multiple-Functional Barrier Layer
A semiconductor device includes a semiconductor structure forming a carrier channel, a barrier layer arranged in proximity with the semiconductor structure,...
2017/0018637 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes: a drift layer of a first conductivity type, implementing a main semiconductor layer; a base region of a second conductivity...
2017/0018636 SEMICONDUCTOR DEVICE
A semiconductor device is provided comprising a semiconductor substrate of a first conductivity type and a dummy trench portion having a main body portion and...
2017/0018635 SEMICONDUCTOR DEVICE
An improvement is achieved in the reliability of a semiconductor device having an IGBT. In an active cell region, in a portion of a semiconductor substrate...
2017/0018634 3C-SiC IGBT
We disclose herein a method of manufacturing a silicon carbide (SiC) based insulated gate bipolar transistor (IGBT), the IGBT comprising: a monocrystalline...
2017/0018633 Desaturable Semiconductor Device with Transistor Cells and Auxiliary Cells
A semiconductor device includes transistor cells that connect a first load electrode with a drift structure forming first pn junctions with body zones when a...
2017/0018632 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND METHOD FOR FORMING OXIDE FILM
One embodiment of the present invention is a semiconductor device at least including an oxide semiconductor film, a gate insulating film in contact with the...
2017/0018631 SEMICONDUCTOR DEVICE
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved....
2017/0018630 SILICON GERMANIUM FIN CHANNEL FORMATION
A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an...
2017/0018629 Fin Structure of Semiconductor Device
The disclosure relates to a fin field effect transistor (FinFET). An exemplary FinFET comprises a substrate comprising a major surface; a fin structure...
2017/0018628 GATE CUT WITH HIGH SELECTIVITY TO PRESERVE INTERLEVEL DIELECTRIC LAYER
A method for preserving interlevel dielectric in a gate cut region includes recessing a dielectric fill to expose cap layers of gate structures formed in a...
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