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Patent # | Description |
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2017/0018627 |
Vertical JFET Made Using A Reduced Mask Set A vertical JFET made by a process using a limited number of masks. A first mask is used to form mesas and trenches in active cell and termination regions... |
2017/0018625 |
TRANSISTOR INCLUDING TOPOLOGICAL INSULATOR Disclosed is a transistor including a topological insulator. The transistor includes: a substrate; a topological insulator provided on the substrate; a drain... |
2017/0018624 |
HORIZONTAL GATE ALL AROUND DEVICE ISOLATION Embodiments described herein generally relate to methods and apparatus for horizontal gate all around (hGAA) isolation. A superlattice structure comprising... |
2017/0018623 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME The semiconductor device includes a first wire pattern formed on a substrate and spaced apart from the substrate, the first wire pattern extending in a first... |
2017/0018622 |
UTBB FDSOI Split Gate Devices An Ultra Thin Body and Box (UTBB) fully depleted silicon on insulator (FDSOI) field effect transistor (FET) employing a split gate topology is provided. A gate... |
2017/0018621 |
Spacer Formation with Straight Sidewall Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate... |
2017/0018620 |
DEVICE AND METHOD TO CONNECT GATE REGIONS SEPARATED USING A GATE CUT A method of fabrication of a device includes performing a gate cut to cut a gate line to create a first gate region and a second gate region. The method... |
2017/0018619 |
Self-Aligned Dual Trench Device A power MOSFET or a power rectifier may be fabricated according to the invention to include a gate trench and a field plate trench. Both trenches can be formed... |
2017/0018618 |
Extended Drain MOS Device for FDSOI Devices A field effect transistor (FET) with raised source/drain region of the device so as to constrain the epitaxial growth of the drain region. The arrangement of... |
2017/0018617 |
FIELD-PLATE STRUCTURES FOR SEMICONDUCTOR DEVICES Field-plate structures are disclosed for electrical field management in semiconductor devices. A field-plate semiconductor structure includes a semiconductor... |
2017/0018616 |
MANUFACTURING METHOD OF A TRANSISTOR A manufacturing method of a transistor is provided, and the method includes: providing a base; forming a fin-shaped gate on the base; covering the fin-shaped... |
2017/0018615 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A semiconductor device includes an N-type silicon carbide substrate, an N-type silicon carbide layer formed on the N-type silicon carbide substrate, a P-type... |
2017/0018614 |
Semiconductor Device and a Method for Forming a Semiconductor Device A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes... |
2017/0018613 |
MICRO DEVICE TRANSFER HEAD HEATER ASSEMBLY AND METHOD OF TRANSFERRING A
MICRO DEVICE A method of transferring a micro device and an array of micro devices are disclosed. A carrier substrate carrying a micro device connected to a bonding layer... |
2017/0018612 |
SPLIT-GATE DEVICES A semiconductor device includes a substrate having a source region and a drain region implanted with a second dopant by a second ion implantation. The... |
2017/0018611 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained... |
2017/0018610 |
SEMICONDUCTOR DEVICE HAVING A FIN Provided is a semiconductor device. The semiconductor device includes a fin disposed on a substrate along a first direction. A sacrificial layer is disposed on... |
2017/0018609 |
SEMICONDUCTOR DEVICE A semiconductor device including a semiconductor substrate of a first conductivity type, a plurality of base regions of a second conductivity type formed on a... |
2017/0018608 |
SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire... |
2017/0018607 |
INTEGRATED RF FRONT END SYSTEM Systems and methods are disclosed for integrating functional components of front-end modules for wireless radios. Front-end modules disclosed may be dual-band... |
2017/0018605 |
SEMICONDUCTOR DEVICE A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to... |
2017/0018604 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE A method of manufacturing a semiconductor device includes forming a lower metal layer, forming an interfacial oxide film on the lower metal layer, providing a... |
2017/0018603 |
ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the display includes a lower substrate with... |
2017/0018602 |
ORGANIC LIGHT EMITTING DEVICE An organic light emitting display device including: a plurality of pixel electrodes disposed on a substrate; pixel defining layers provided on the plurality of... |
2017/0018601 |
DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF A display device includes a substrate, and a group pixel on the substrate, the group pixel comprising at least two pixels that represent the same color,... |
2017/0018600 |
ORGANIC LIGHT-EMITTING DISPLAY DEVICE An organic light-emitting display device having widened color gamut is disclosed. The organic light-emitting display device comprises a first sub-pixel, a... |
2017/0018599 |
Pyridone Dye Composition The invention relates to a colorant composition comprising at least one compound of the formula (I) and at least one pigment, in which the compounds of the... |
2017/0018598 |
Memory Devices and Memory Device Forming Methods Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive... |
2017/0018597 |
WAVEGUIDE AND SEMICONDUCTOR PACKAGING A method and apparatus for integrating individual III-V MMICs into a micromachined waveguide package is disclosed. MMICs are screened prior to integration,... |
2017/0018596 |
METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR A method of manufacturing a solid-state image sensor, the method comprising preparing a structure including a substrate and an insulating member provided... |
2017/0018595 |
METHOD OF FABRICATING LIGHT PIPE OF IMAGE SENSING DEVICE A method of fabricating a light pipe of an image sensing device including following steps is provided. A substrate is provided. The substrate includes a pixel... |
2017/0018594 |
THREE-DIMENSIONAL INTEGRATED MULTISPECTRAL IMAGING SENSOR A three-dimensional multispectral imaging sensor and method for forming a three-dimensional multispectral imaging sensor are provided. The three-dimensional... |
2017/0018593 |
SYSTEM, METHOD, AND APPARATUS FOR GENERATING A RAMP SIGNAL WITH A CHANGING
SLOPE A device for generating a ramp signal with a changing slope is disclosed. The device may comprise a processor configured to generate a variable signal. The... |
2017/0018592 |
SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF DRIVING THE SAME A solid-state image pickup device includes: a photoelectric conversion element including a charge accumulation region, the photoelectric conversion element... |
2017/0018590 |
CHIP PACKAGE AND METHOD FOR FORMING THE SAME A chip package is provided. The chip package includes a sensing device. The chip package also includes a first conductive structure disposed on the sensing... |
2017/0018589 |
SEMICONDUCTOR PACKAGE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND
SOLID-STATE IMAGING DEVICE A semiconductor package includes: a sheet-like thin plate on which a semiconductor chip is secured; and a substrate including a wiring layer, disposed on the... |
2017/0018588 |
APPARATUS FOR RADIATION DETECTION IN A DIGITAL IMAGING SYSTEM The disclosure is directed at a method and apparatus for producing a detector element. The detector element includes first and second electrodes located on... |
2017/0018587 |
IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE An imaging device whose dynamic range is broadened is provided. The imaging device includes a pixel including a first photoelectric conversion element and a... |
2017/0018586 |
PHOTOELECTRIC SENSOR A photoelectric sensor includes a current division control circuit that sequentially sets a reference voltage for each current divider circuit along one of the... |
2017/0018585 |
SOLID-STATE IMAGING DEVICE AND ELECTRONIC DEVICE The present invention relates to a solid-state imaging device. In a pixel array section in the solid-state imaging device, a vertical signal line is provided... |
2017/0018584 |
CMOS IMAGE SENSOR WITH PUMP GATE AND EXTREMELY HIGH CONVERSION GAIN Some embodiments relate to an image sensor pixel comprising a transfer gate formed on a first surface of a semiconductor substrate, a floating diffusion formed... |
2017/0018583 |
ISOLATED GLOBAL SHUTTER PIXEL STORAGE STRUCTURE An imaging system includes a pixel array of pixel cells with each one of the pixel cells including a photodiode disposed in a semiconductor material, a global... |
2017/0018582 |
Imaging Array with Improved Dynamic Range Utilizing Parasitic Photodiodes
Within Floating Diffusion Nodes of Pixels A pixel sensor having a main photodetector and a parasitic photodiode and a method for reading out that pixel sensor are disclosed. The pixel sensor is read by... |
2017/0018581 |
METHOD FOR FORMING THIN FILM PATTERN The present disclosure provides a method for forming a thin film pattern. The method includes steps of: forming a mask pattern on a thin film in such a manner... |
2017/0018580 |
METHOD FOR MANUFACTURING ARRAY SUBSTRATE AND ARRAY SUBSTRATE MANUFACTURED
THEREFOR A method for manufacturing an array substrate is disclosed and includes steps of: sequentially forming a first metal layer, an insulating layer and a second... |
2017/0018578 |
SEMICONDUCTOR DEVICE A semiconductor device including a capacitor having an increased charge capacity without decreasing an aperture ratio is provided. The semiconductor device... |
2017/0018577 |
SEMICONDUCTOR DEVICE A semiconductor device that is suitable for miniaturization is provided. The semiconductor device has a plurality of different transistors, active layers of... |
2017/0018576 |
Liquid Crystal Display Device and Electronic Device To provide a circuit used for a shift register or the like. The basic configuration includes first to fourth transistors and four wirings. The power supply... |
2017/0018575 |
DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME A display device capable of reducing the number of manufacturing processes and manufacturing costs and a method of manufacturing the display device are... |
2017/0018574 |
ULTRA HIGH DENSITY THIN FILM TRANSISTOR SUBSTRATE HAVING LOW LINE
RESISTANCE STRUCTURE AND METHOD FOR... A display device is described that has reduced resistance in one or more of the gate, common, data electrical lines that control the operation of the pixels of... |