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Patent # Description
2017/0098754 PIEZOELECTRIC DEVICE AND METHOD FOR PRODUCING PIEZOELECTRIC DEVICE
A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer...
2017/0098753 PIEZOELECTRIC DEVICE AND METHOD OF DRIVING PIEZOELECTRIC DEVICE
A piezoelectric device includes a piezoelectric element including a first electrode, a second electrode, and a piezoelectric layer provided between the first...
2017/0098752 METHOD AND DEVICE FOR REDUCING EXTRINSIC DARK COUNT OF NANOWIRE SINGLE PHOTON DETECTOR
A method and a device for reducing the extrinsic dark count of a superconducting nanowire single photon detector (SNSPD), it comprises the steps of:...
2017/0098751 THERMOELECTRIC GENERATING SYSTEM
Provided is a thermoelectric generating system which may be easily installed in a heat source of a vehicle and which is easy to assemble and disassemble...
2017/0098750 Thermoelectric Generator To Engine Exhaust Manifold Interface Using A Direct-Bond-Copper (DBC) Arrangement
An assembly for coupling thermally a thermoelectric generator (TEG) to an exhaust manifold includes a first heat-exchanger, a first dielectric-layer, a TEG,...
2017/0098749 THERMOELECTRIC STRUCTURE, THERMOELECTRIC DEVICE AND METHOD OF MANUFACTURING THE SAME
A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers....
2017/0098748 Thermo-electric device to provide electrical power
A thermoelectric device to generate electrical power at relatively high voltages using a thermopile, temperature differentials regarding the thermopile and the...
2017/0098747 LIGHT EMITTING DEVICE
Disclosed herein is a light emitting device manufactured by separating a growth substrate in a wafer level. The light emitting device includes: a base; a light...
2017/0098746 LOW OPTICAL LOSS FLIP CHIP SOLID STATE LIGHTING DEVICE
Flip chip LEDs incorporate multi-layer reflectors and light transmissive substrates patterned along an internal surface adjacent to semiconductor layers. A...
2017/0098745 DISPLAY CONTRAST
Display devices with improved display contrast and methods of manufacturing the display devices. Some embodiments include a method of manufacturing a light...
2017/0098744 LED FLUORESCENT COVER AND PREPARATION METHOD THEREOF
A Light Emitting Diode (LED) fluorescent cover comprises the following components by weight: 90-96% of single-component solid silicone rubber, 3-8% of...
2017/0098743 LIGHT EMITTING DEVICE WITH BEVELED REFLECTOR AND MANUFACTURING METHOD OF THE SAME
A light emitting device, including an LED semiconductor die, a photoluminescent structure and a reflector, is disclosed. The photoluminescent structure with a...
2017/0098742 LIGHT EMITTING DEVICE
A light emitting device includes at least one semiconductor light emitting element, and a wavelength conversion layer which is formed on a surface of the...
2017/0098741 LIGHT EMITTING DIODE DEVICES WITH ZINC OXIDE LAYER
LED devices having high-quality single crystal ZnO structures for spreading currents and extracting light out of the LEDs are disclosed. In one aspect, a LED...
2017/0098740 SEMICONDUCTOR UNIT, SEMICONDUCTOR DEVICE, LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, AND METHOD OF...
[Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer...
2017/0098739 Contact Configuration for Optoelectronic Device
An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa...
2017/0098738 Light Emitting Diode
A light emitting diode includes: a substrate; a semiconductor light emitting laminate on the substrate, including from bottom up a first semiconductor layer,...
2017/0098737 NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above thea first conductivity...
2017/0098736 MATERIAL LAYER STACK, LIGHT EMITTING ELEMENT, LIGHT EMITTING PACKAGE, AND METHOD OF FABRICATING LIGHT EMITTING...
Disclosed herein are a material layer stack, a light emitting element, a light emitting package, and a method of fabricating a light emitting element. The...
2017/0098735 LIGHT-EMITTING DEVICE
A light-emitting device is provided. The light-emitting device comprises a light-emitting stack comprising a first semiconductor layer, a second semiconductor...
2017/0098734 LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE
In a light-emitting element (1), a light-emitting layer (4), a second conductivity type semiconductor layer (5), a transparent electrode layer (6), a...
2017/0098733 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
A method for manufacturing a semiconductor element includes providing a wafer having a sapphire substrate and a semiconductor stacked body disposed on the...
2017/0098732 LIGHT EMITTING DEVICE HAVING TRANSPARENT ELECTRODE AND METHOD OF MANUFACTURING LIGHT EMITTING DEVICE
Provided are a light emitting device including a transparent electrode having high transmittance with respect to light in a UV wavelength range as well as in a...
2017/0098731 Light Emitting Heterostructure with Partially Relaxed Semiconductor Layer
A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a...
2017/0098730 AVALANCHE PHOTODIODE FOR DETECTING ULTRAVIOLET RADIATION AND MANUFACTURING METHOD THEREOF
An avalanche photodiode for detecting ultraviolet radiation, including: a silicon carbide body having a first type of conductivity, which is delimited by a...
2017/0098729 WAFER-INTEGRATED, ULTRA-LOW PROFILE CONCENTRATED PHOTOVOLTAICS (CPV) FOR SPACE APPLICATIONS
A concentrator-type photovoltaic module includes a plurality of photovoltaic cells having respective surface areas of less than about 4 square millimeters (mm)...
2017/0098728 PHOTOVOLTAIC CELL HAVING A COUPLED EXPANDED METAL ARTICLE
A method comprises providing an expanded metal article having a plurality of first segments intersecting a plurality of second segments thereby forming a...
2017/0098727 Absorption Enhancement Structure
A structure, in particular for use in thin layer cells, includes a reflector and an absorbing layer, wherein the reflector has an upper side and a lower side,...
2017/0098726 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING SOLAR CELL MODULE
This solar cell module is provided with: a solar cell; a first protection member that is arranged on the light-receiving surface side of the solar cell; a...
2017/0098725 SOLAR CELL MODULE
A solar cell module includes: a plurality of solar cells; a front surface encapsulant member which is disposed on a front surface side of the plurality of...
2017/0098724 CUTTABLE SOLAR WRAP
A cuttable solar wrap includes a flexible, sheet-like substrate. A photovoltaic grid, having photovoltaic cells or submodules connected in parallel by internal...
2017/0098723 CONTROLLIING POTENTIAL-INDUCED DEGRADATON OF PHOTOVOLTAIC MODULES
Method for controlling a potential-induced degradation (PID) of a PV module. Embodiment includes modifying surface conductivity of the glass-cover of the PV...
2017/0098722 SOLAR CELL
Disclosed is a solar cell including a semiconductor substrate including a semiconductor material, a tunneling layer disposed over one surface of the...
2017/0098721 Solar Cell Apparatus and Method of Fabricating the Same
According to the embodiment, there is provided a solar cell apparatus. The solar cell apparatus includes a back electrode layer on a substrate, a light...
2017/0098720 METHOD, PROCESS AND FABRICATION TECHNOLOGY FOR OXIDE LAYERS
This disclosure relates to a Room Temperature Wet Chemical Growth (RTWCG) method and process of SiOX thin film coatings which can be grown on various...
2017/0098719 SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME
A Schottky diode comprises: a substrate; a first semiconductor layer located on the substrate; a second semiconductor layer located on the first semiconductor...
2017/0098718 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor layer, a gate...
2017/0098717 DEVICES HAVING TRANSITION METAL DICHALCOGENIDE LAYERS WITH DIFFERENT THICKNESSES AND METHODS OF MANUFACTURE
An embodiment is a structure including a first active device in a first region of a substrate, the first active device including a first layer of a...
2017/0098716 TWO-DIMENSIONAL HETEROJUNCTION INTERLAYER TUNNELING FIELD EFFECT TRANSISTORS
A two-dimensional (2D) heterojunction interlayer tunneling field effect transistor (Thin-TFET) allows for particle tunneling in a vertical stack comprising...
2017/0098715 THIN FILM TRANSISTORS WITH TRENCH-DEFINED NANOSCALE CHANNEL LENGTHS
Thin film transistors (TFTs), including radiofrequency TFTs, with submicron-scale channel lengths and methods for making the TFTs are provided. The transistors...
2017/0098714 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE
Embodiments of the present invention disclose a thin film transistor and a manufacturing method thereof, an array substrate, and a display device, which...
2017/0098713 Engineered Ferroelectric Gate Devices
Coupling of switchable ferroelectric polarization with the carrier transport in an adjacent semiconductor enables a robust, non-volatile manipulation of the...
2017/0098712 SEMICONDUCTOR TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor transistor device includes an oxide semiconductor layer having an active surface, a source electrode, a drain electrode, a gate electrode and a...
2017/0098711 SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate and a gate over the...
2017/0098710 Manufacturing Method of Non-Planar FET
The present invention provides a non-planar FET and a method of manufacturing the same. The non-planar FET includes a substrate, a fin structure, a gate and a...
2017/0098709 NON-LINEAR FIN-BASED DEVICES
An embodiment includes an apparatus comprising: a non-planar fm having first, second, and third portions each having major and minor axes and each being...
2017/0098708 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a gate structure, a sidewall spacer, and an epitaxial layer. The gate structure is disposed on the substrate, and...
2017/0098707 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A manufacturing method of a semiconductor structure includes the following steps. An epitaxial region is formed in a semiconductor substrate. A dielectric...
2017/0098706 Field Effect Transistors and Methods of Forming Same
Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the...
2017/0098705 Termination Region Architecture for Vertical Power Transistors
A vertical power switching device, such as a vertical superjunction metal-oxide-semiconductor field-effect-transistor (MOSFET), in which termination structures...
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