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Patent # Description
2017/0098704 SHIELD WRAP FOR A HETEROSTRUCTURE FIELD EFFECT TRANSISTOR
Devices are disclosed for providing heterojunction field effect transistor (HFETs) having improved performance and/or reduced noise generation. A gate...
2017/0098703 SEMICONDUCTOR DEVICE
Provided is a semiconductor device in which electron mobility is improved by applying sufficiently large tensile stress in a predetermined direction without...
2017/0098702 AVALANCHE ENERGY HANDLING CAPABLE III-NITRIDE TRANSISTORS
A semiconductor device includes a GaN FET with an overvoltage clamping component electrically coupled to a drain node of the GaN FET and coupled in series to a...
2017/0098701 SEMICONDUCTOR DEVICE
A semiconductor device includes: an electron transit layer constituted of GaN; an electron supply layer constituted of In.sub.x1Al.sub.y1Ga.sub.1-x1-y1N...
2017/0098700 DIODE, SEMICONDUCTOR DEVICE, AND MOSFET
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode...
2017/0098699 IMPLEMENTING STRESS IN A BIPOLAR JUNCTION TRANSISTOR
Device structure and fabrication methods for a bipolar junction transistor. One or more trench isolation regions are formed in a substrate to define a device...
2017/0098698 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A...
2017/0098697 DIELECTRIC ISOLATED SiGe FIN ON BULK SUBSTRATE
A method for forming fins on a semiconductor device includes etching trenches into a monocrystalline substrate to form first fins and forming a first...
2017/0098696 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Provided is a semiconductor structure including a substrate, a first gate, a second gate, a third gate and an inter-gate dielectric layer. The substrate has a...
2017/0098695 FABRICATION OF SHIELDED GATE TRENCH MOSFET WITH INCREASED SOURCE-METAL CONTACT
Forming a semiconductor device on a semiconductor substrate having a substrate top surface includes: forming a gate trench extending from the substrate top...
2017/0098694 SIC EPITAXIAL WAFER, MANUFACTURING APPARATUS OF A SIC EPITAXIAL WAFER, FABRICATION METHOD OF A SIC EPITAXIAL...
The SiC epitaxial wafer includes a substrate, and an SiC epitaxial growth layer disposed on the substrate, wherein an Si compound gas is used for a supply...
2017/0098693 SEMICONDUCTOR DEVICE AND METHOD OF FORMATION
A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second...
2017/0098692 FIN-TYPE FIELD EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME
Provided is a FinFET including a substrate, at least one fin and at least one gate. A portion of the at least one fin is embedded in the substrate. The at...
2017/0098691 METHOD FOR MANUFACTURING AN INTEGRATED CIRCUIT
Techniques related to a method for manufacturing an integrated circuit is disclosed. According to one embodiment, a method for manufacturing an integrated...
2017/0098690 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
An organic light-emitting display apparatus includes a pixel electrode, a light emission layer over the pixel electrode, an opposite electrode covering the...
2017/0098689 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
Provided is a novel display device that is highly convenient or reliable or a display device with low power consumption and high display quality. The display...
2017/0098688 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME
An organic light emitting diode (OLED) display includes a base substrate, a first electrode on the base substrate, a pixel definition layer on the first...
2017/0098687 LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
The light emitting display device comprises: a substrate including a plurality of pixels that are arranged in a first direction and a second direction that...
2017/0098686 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode (OLED) display includes a substrate, a first electrode disposed on the substrate, an organic emission layer disposed on the...
2017/0098685 Vertical Bit Line Non-Volatile Memory Systems And Methods Of Fabrication
Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and methods of fabricating such a...
2017/0098684 SWITCH DEVICE AND STORAGE UNIT
A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode...
2017/0098683 SWITCH DEVICE AND STORAGE UNIT
A switch device includes: a first electrode; a second electrode arranged to face the first electrode; and a switch layer provided between the first electrode...
2017/0098681 IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME
Provided is an image sensor having improved characteristics. An image sensor in accordance with an embodiment of the present invention may include first and...
2017/0098680 STACKED IMAGE SENSOR
A stacked image sensor includes a first photoelectric conversion layer including a plurality of first photoelectric conversion regions; a second photoelectric...
2017/0098679 Structure and Method for 3D Image Sensor
An image sensor structure that includes a first semiconductor substrate having a plurality of imaging sensors; a first interconnect structure formed on the...
2017/0098678 CHIP SCALE SENSING CHIP PACKAGE AND A MANUFACTURING METHOD THEREOF
This present invention provides a chip scale sensing chip package, comprising: a sensing chip with a first top surface and a first bottom surface opposite to...
2017/0098677 SEMICONDUCTOR DEVICE
A semiconductor device including a substrate, at least one sensor, a dielectric layer, at least one light pipe structure, at least one pad, a shielding layer,...
2017/0098676 SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS
A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a...
2017/0098675 MECHANISMS FOR FORMING IMAGE SENSOR DEVICE
A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer...
2017/0098674 SOLID-STATE IMAGING APPARATUS
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
2017/0098673 IMAGING ELEMENT AND IMAGING DEVICE
An imaging element according to the present disclosure includes: a first pixel and a second pixel each including a light receiving section and a light...
2017/0098672 IMAGE SENSOR INCLUDING COLOR SEPARATION ELEMENT
An image sensor includes a pixel array including a first pixel row, in which a plurality of first pixels and a plurality of second pixels are alternately...
2017/0098671 SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
A solid-state imaging device having a backside illuminated structure, includes: a pixel region in which pixels each having a photoelectric conversion portion...
2017/0098670 PLANAR NANO-OSCILLATOR ARRAY HAVING PHASE LOCKING FUNCTION
Provided is a planar nano-oscillator array having phase locking function, including two or more planar nano-oscillators which are arranged in parallel. The two...
2017/0098669 DISPLAY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DISPLAY DEVICE
A display device according to the present disclosure includes: a transistor section (100) that includes a gate insulating film (130), a semiconductor layer...
2017/0098668 Flexible Micro-Electronics Circuits with Crack Mitigation
An electronic circuit device that includes a plurality of electrical circuits disposed on a support substrate, such as an electronic display device, includes...
2017/0098667 LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE STRUCTURE AND MANUFACTURE METHOD THEREOF
The present invention provides a Low Temperature Poly-silicon TFT substrate structure and a manufacture method thereof. By providing the amorphous silicon...
2017/0098666 THIN FILM TRANSISTOR SUBSTRATE, DISPLAY APPARATUS INCLUDING THIN FILM TRANSISTOR SUBSTRATE, METHOD OF...
A thin film transistor (TFT) substrate in which properties of a TFT may be modified according to a function of the TFT, a display apparatus including the TFT...
2017/0098665 HYBRID SUBSTRATE ENGINEERING IN CMOS FINFET INTEGRATION FOR MOBILITY IMPROVEMENT
A method for forming a hybrid complementary metal oxide semiconductor (CMOS) device includes orienting a semiconductor layer of a semiconductor-on-insulator...
2017/0098664 METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS
An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching...
2017/0098663 INTEGRATED CIRCUITS (ICS) ON A GLASS SUBSTRATE
An integrated circuit (IC) includes a glass substrate and a buried oxide layer. The IC additionally includes a first semiconductor device coupled to the glass...
2017/0098662 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
In the case where a signal delay is found in a circuit operation in a semiconductor chip, when a repeater for delay reduction is additionally formed as a...
2017/0098661 SEMICONDUCTOR DEVICE INCLUDING A REPEATER/BUFFER AT HIGHER METAL ROUTING LAYERS AND METHODS OF MANUFACTURING...
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing...
2017/0098660 APPARATUSES HAVING A FERROELECTRIC FIELD-EFFECT TRANSISTOR MEMORY ARRAY AND RELATED METHOD
An apparatus comprises field-effect transistor (FET) structures stacked horizontally and vertically in a three-dimensional memory array architecture, gates...
2017/0098659 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
According to one embodiment, the plurality of charge storage films are separated in a stacking direction with a second air gap interposed. The plurality of...
2017/0098658 SEMICONDUCTOR MEMORY DEVICE
According to an embodiment, a semiconductor memory device comprises a first region, a second region, and a third region. The first region includes: a part of a...
2017/0098657 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
The present disclosure provides a method of manufacturing a three dimensional memory device to suppress warpage of conductive patterns. The method may include...
2017/0098656 Semiconductor Memory Devices
A semiconductor memory device includes insulating patterns and gate patterns alternately stacked on a substrate, a channel structure that intersects the...
2017/0098655 THREE-DIMENSIONAL MEMORY STRUCTURE HAVING A BACK GATE ELECTRODE
A memory stack structure includes a cavity including a back gate electrode, a back gate dielectric, a semiconductor channel, and at least one charge storage...
2017/0098654 NON-VOLATILE SPLIT GATE MEMORY CELLS WITH INTEGRATED HIGH K METAL GATE, AND METHOD OF MAKING SAME
A method of forming a pair of memory cells that includes forming a polysilicon layer over and insulated from a semiconductor substrate, forming a pair of...
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