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Patent # Description
2017/0110602 METHODS TO INTRODUCE SUB-MICROMETER, SYMMETRY-BREAKING SURFACE CORRUGATION TO SILICON SUBSTRATES TO INCREASE...
Provided is a method for fabricating a nanopatterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a...
2017/0110594 THIN FILM TRANSISTOR, THIN FILM TRANSISTOR MANUFACTURING METHOD AND ARRAY SUBSTRATE
The present disclosure relates to a thin film transistor, a method for manufacturing a thin film transistor and an array substrate. The thin film transistor...
2017/0110586 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with...
2017/0110585 Semiconductor Device
A semiconductor device or the like capable of preventing malfunction of a driver circuit is provided. In a driver circuit for driving a power device used for...
2017/0110572 Semiconductor Devices, Power Semiconductor Devices, and Methods for Forming a Semiconductor Device
A semiconductor device includes a drift region of a device structure arranged in a semiconductor layer. The drift region includes at least one first drift...
2017/0110571 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
In a front surface of a semiconductor base body, a gate trench is disposed penetrating an n.sup.+-type source region and a p-type base region to a second...
2017/0110570 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF
A thin film transistor includes a substrate, a gate electrode disposed on the substrate, a channel layer located on the gate electrode, a gate insulation layer...
2017/0110562 SEMICONDUCTOR DEVICE
A planar MOSFET is provided on the upper surface of the N.sup.--type semiconductor substrate in a mesa portion between the trenches. A P.sup.+-type emitter...
2017/0110554 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit device includes a fin type active area protruding from a substrate and having an upper surface at a first level; a nanosheet extending in...
2017/0110550 GATE STRUCTURE, SEMICONDUCTOR DEVICE AND THE METHOD OF FORMING SEMICONDUCTOR DEVICE
A gate structure, a semiconductor device, and the method of forming a semiconductor device are provided. In various embodiments, the gate structure includes a...
2017/0110545 SEMICONDUCTOR DEVICE
According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC...
2017/0110536 METAL-OXIDE-SEMICONDUCTOR TRANSISTOR AND METHOD OF FORMING GATE LAYOUT
A metal-oxide-semiconductor transistor includes a substrate, a gate insulating layer disposed on the surface of the substrate layer, a metal gate disposed on...
2017/0110520 Organic Radiation-Emitting Component
An organic radiation-emitting component and a method for manufacturing an organic radiation-emitting component are disclosed. In an embodiment, the component...
2017/0110515 1-SELECTOR N-RESISTOR MEMRISTIVE DEVICES
A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector...
2017/0110514 MULTI-LAYERED CONDUCTIVE METAL OXIDE STRUCTURES AND METHODS FOR FACILITATING ENHANCED PERFORMANCE...
A memory cell including a two-terminal re-writeable non-volatile memory element having at least two layers of conductive metal oxide (CMO), which, in turn, can...
2017/0110510 METHOD OF PRODUCING A SEMICONDUCTOR DEVICE
A semiconductor device includes four or more first memory cells arranged on a row, the first memory cells each including a first pillar-shaped semiconductor...
2017/0110504 INTEGRATED PIEZOELECTRIC MICROMECHANICAL ULTRASONIC TRANSDUCER PIXEL AND ARRAY
An ultrasonic sensor pixel includes a substrate, a piezoelectric micromechanical ultrasonic transducer (PMUT) and a sensor pixel circuit. The PMUT includes a...
2017/0110496 Interconnect Apparatus and Method
An apparatus comprises a first semiconductor chip including a first substrate, a plurality of first inter-metal dielectric layers and a plurality of first...
2017/0110492 SENSORS INCLUDING COMPLEMENTARY LATERAL BIPOLAR JUNCTION TRANSISTORS
An integrated radiation sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second...
2017/0110488 Preparation Method of Poly-Silicon TFT Array Substrate and Array Substrate Thereof
A preparation method of a poly-silicon thin film transistor (TFT) array substrate and an array substrate thereof are provided. The preparation method includes:...
2017/0110486 TFT SUBSTRATE STRUCTURE
The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer,...
2017/0110484 TFT SUBSTRATE STRUCTURE
The present invention provides a TFT substrate structure, comprising a Switching TFT and a Driving TFT, and the Switching TFT comprises a first active layer,...
2017/0110477 DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
A display device includes a first substrate including a display region and a non-display region, the non-display region being positioned on an outside of the...
2017/0110472 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes a stacked body; a columnar portion; a plate portion; and a blocking insulating film. The stacked...
2017/0110465 LOW POWER EMBEDDED ONE-TIME PROGRAMMABLE (OTP) STRUCTURES
Devices and methods for forming a device are presented. The method includes providing a substrate prepared with at least a first region for accommodating an...
2017/0110454 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes first and second Fin FET and a separation plug made of an insulating material and disposed between the first and second Fin...
2017/0110449 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device comprising: a first electrode; a first semiconductor region of a first conductivity type; a second semiconductor region of a second...
2017/0110445 SEMICONDUCTOR DEVICES HAVING HYBRID STACKING STRUCTURES AND METHODS OF FABRICATING THE SAME
A semiconductor device having a chip stack and an interconnection terminal is provided. The chip stack includes a first semiconductor chip, a second...
2017/0110435 METHOD FOR HEATING A METAL MEMBER, METHOD FOR BONDING HEATED METAL MEMBERS, AND APPARATUS FOR HEATING A METAL...
A heating method includes an oxide film forming step and a heating step. The thickness of an oxide film is set in a first range that includes a first maximal...
2017/0110430 BONDING WIRE FOR SEMICONDUCTOR DEVICE
The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density...
2017/0110423 SEMICONDUCTOR CHIP DEVICE
According to various embodiments, a method may include: forming a first layer on a surface using a first lift-off process; forming a second layer over the...
2017/0110420 TRAP LAYER SUBSTRATE STACKING TECHNIQUE TO IMPROVE PERFORMANCE FOR RF DEVICES
Some embodiments of the present disclosure are directed to a device. The device includes a substrate comprising a silicon layer disposed over an insulating...
2017/0110398 INTERCONNECTION STRUCTURE AND METHOD OF FORMING THE SAME
An interconnection structure includes a non-insulator structure, a dielectric structure, and a conductive structure. The dielectric structure is present on the...
2017/0110384 Heat Spreader Having Thermal Interface Material Retainment
In embodiments described herein, an integrated circuit (IC) package is provided. The IC package may include a substrate, an IC die, and a heat spreader. The IC...
2017/0110371 METHOD OF DICING A WAFER AND SEMICONDUCTOR CHIP
A method of dicing a wafer may include forming a plurality of active regions in a wafer, each active region including at least one electronic component, the...
2017/0110369 ELECTRONIC DEVICE AND METHOD FOR PRODUCING SAME
An electronic device includes: a first insulating film; an interconnection trench on a surface of the first insulating film; an interconnection pattern...
2017/0110362 SOI STRUCTURE AND FABRICATION METHOD
Present embodiments provide for A SOI substrate and fabricating method thereof are provided. The fabricating method of SOI substrate comprises: providing a...
2017/0110356 ELECTROSTATIC CHUCK DESIGN FOR COOLING-GAS LIGHT-UP PREVENTION
An Electrostatic Chuck (ESC) in a chamber of a semiconductor manufacturing apparatus is presented for eliminating cooling-gas light-up. One wafer support...
2017/0110345 DISPENSE NOZZLE WITH A SHIELDING DEVICE
Provided is a nozzle system for dispensing a dispense chemical onto a substrate, the system comprising: a nozzle comprising a nozzle body and a nozzle tip; a...
2017/0110339 IC DEVICE HAVING PATTERNED, NON-CONDUCTIVE SUBSTRATE
A patterned, non-conductive substrate for an integrated circuit (IC) package has a die side configured to receive a die and a lead side opposite the die side....
2017/0110334 GERMANIUM SMOOTHING AND CHEMICAL MECHANICAL PLANARIZATION PROCESSES
Method for chemical mechanical planarization is provided, which includes: forming a dielectric layer containing at least one opening, the dielectric layer is...
2017/0110323 METHOD OF FORMING PATTERNED METAL FILM LAYER AND PREPARATION METHOD OF TRANSISTOR AND ARRAY SUBSTRATE
A method of forming a patterned metal film layer and preparation methods of a transistor and an array substrate are disclosed, in the technical field of...
2017/0110316 METHOD OF CLEANING SUBSTRATE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE SAME
A method of cleaning a substrate includes providing the substrate, the substrate including a metal material film, performing physical cleaning of the...
2017/0110293 Bulk sintered solid solution ceramic which exhibits fracture toughness and halogen plasma resistance
A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and...
2017/0110289 PLASMA PROCESSING EQUIPMENT AND PLASMA GENERATION EQUIPMENT
A plasma processing equipment includes a vacuum processing chamber, an insulating material, a gas inlet, a high frequency induction antenna provided at an...
2017/0110279 THERMAL METAL OXIDE VARISTOR CIRCUIT PROTECTION DEVICE
Exemplary embodiments of the present invention are directed to a circuit protection device, A circuit protection device may comprise a housing defining a...
2017/0110266 SAFETY LOCK MECHANISM FOR TRIGGER SWITCH HANDLE OF MITER SAW
A safety lock mechanism mounted at a trigger switch handle of a miter saw to face toward a switch which includes a switch button pivotally mounted at the...
2017/0110255 CATHODE SUBASSEMBLY WITH INTEGRATED SEPARATOR
Device designs are presented that include a cathode subassembly for protecting the device from unwanted discharge, and aiding in alignment of the cathodes and...
2017/0110254 WINDING-TYPE SOLID ELECTROLYTIC CAPACITOR AND WINDING-TYPE CAPACITOR ELEMENT THEREOF
Disclosed is a winding-type solid electrolytic capacitor which includes an enclosing casing and a winding-type capacitor element enclosed by the enclosing...
2017/0110242 WIRELESS POWER TRANSMISSION SYSTEM, POWER TRANSMITTING DEVICE, AND POWER RECEIVING DEVICE
This wireless power transmission system includes: a power transmitting antenna and a power receiving antenna arranged to face each other and not to be in...
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