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Patent # Description
2017/0140944 SEMICONDUCTOR DEVICE, CORRESPONDING METHODS OF PRODUCTION AND USE AND CORRESPONDING APPARATUS
A semiconductor device includes a quadrilateral package with a first pair of opposed sides and a second pair of opposed sides. Both sides of the first pair of...
2017/0140943 METHOD FOR FORMING A CAVITY AND A COMPONENT HAVING A CAVITY
A method for forming a cavity in a silicon substrate, a surface of the silicon substrate having a tilting angle relative to a first plane of the silicon...
2017/0140942 Self-Aligned Dual-Metal Silicide and Germanide Formation
A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a...
2017/0140941 ALUMINUM OXIDE LANDING LAYER FOR CONDUCTIVE CHANNELS FOR A THREE DIMENSIONAL CIRCUIT DEVICE
A multitier stack of memory cells having an aluminum oxide (AlOx) layer as a noble HiK layer to provide etch stop selectivity. Each tier of the stack includes...
2017/0140940 GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER ANNEALING
Semiconductor structures and methods of fabricating the same using interrupted deposition processes and multiple laser anneals are provided. The structure...
2017/0140938 METHOD OF FORMING A SEMICONDUCTOR DEVICE
A method of forming a semiconductor device includes irradiating a semiconductor body with particles. Dopant ions are implanted into the semiconductor body such...
2017/0140937 METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING PERFORMING AN ATOMIC LAYER ETCHING PROCESS
Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor...
2017/0140936 TRENCH STRUCTURE ON SIC SUBSTRATE AND METHOD FOR FABRICATING THEREOF
A trench structure on a SiC substrate and method for fabricating thereof is provided. The fabricating method includes: providing a SiC substrate; forming a...
2017/0140935 SEMICONDUCTOR DEVICE FABRICATION METHOD
With a semiconductor device fabrication method, an oxide film and a thermal oxide film formed over a semiconductor substrate are etched and ions are implanted...
2017/0140934 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device, includes: (a) providing a SiC epitaxial substrate in which on a SiC support substrate, a SiC epitaxial...
2017/0140933 METHOD FOR FORMING STACKED NANOWIRE TRANSISTORS
A method includes forming a first semiconductor stack using an epitaxial growth process, the first semiconductor stack comprising a first plurality of...
2017/0140932 METHOD OF FORMING ULTRA-THIN NANOWIRES
Provided is a method of forming a nanowire-based device. The method includes forming a first mask layer over a substrate; forming a first opening in the first...
2017/0140931 LOW K DIELECTRIC DEPOSITION VIA UV DRIVEN PHOTOPOLYMERIZATION
Provided are methods and apparatus for ultraviolet (UV) assisted capillary condensation to form dielectric materials. In some embodiments, a UV driven reaction...
2017/0140930 Treatment Process and System
A treatment, structure and system are provided that modify the deposition process of a material that can occur over two differing materials. In an embodiment...
2017/0140929 COATING FILM FORMING METHOD, COATING FILM FORMING APPARATUS, AND STORAGE MEDIUM
A method of forming a coating film includes horizontally supporting a substrate, supplying a coating solution to a central portion of the substrate and...
2017/0140928 PROTECTIVE FILM FORMING METHOD
A method for forming a water-soluble resin film on a wafer having a plurality of devices thereon. The wafer is supported through an adhesive tape to an annular...
2017/0140927 FOCUSED RADIATION BEAM INDUCED DEPOSITION
A semiconductor device fabrication method includes irradiating a first surface of a substrate with a radiation beam. While irradiating the first surface of the...
2017/0140926 PROCESS FOR DEPOSITION OF TITANIUM OXYNITRIDE FOR USE IN INTEGRATED CIRCUIT FABRICATION
A process is provided for depositing a substantially amorphous titanium oxynitride thin film that can be used, for example, in integrated circuit fabrication,...
2017/0140925 FORMATION OF SiOCN THIN FILMS
Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma...
2017/0140924 FORMATION OF SiOCN THIN FILMS
Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma...
2017/0140923 ETCHING METHOD
There is provided an etching method for etching an antireflection film including silicon according to a pattern of a resist film by using plasma processing...
2017/0140922 GENERATING METHOD, IMPRINTING METHOD, IMPRINT APPARATUS, PROGRAM, AND METHOD OF MANUFACTURING ARTICLE
Disclosed is a method of generating a recipe for supplying an imprint material onto a substrate, the imprint material being used in imprint processing of...
2017/0140921 METHOD OF REVERSE TONE PATTERNING
Methods of reversing the tone of a pattern having non-uniformly sized features. The methods include depositing a highly conformal hard mask layer over the...
2017/0140920 LOW VAPOR PRESSURE AEROSOL-ASSISTED CVD
Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a...
2017/0140919 ENHANCED DEFECT REDUCTION FOR HETEROEPITAXY BY SEED SHAPE ENGINEERING
A heteroepitaxially grown structure includes a substrate and a mask including a high aspect ratio trench formed on the substrate. A cavity is formed in the...
2017/0140918 ATOMIC LAYER DEPOSITION OF ANTIMONY OXIDE FILMS
Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony...
2017/0140917 MANUFACTURING APPARATUS FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
An adhesion liquid is supplied onto a front side of a wafer having a disk-shape while a rinse liquid is discharged onto a backside of the wafer that is...
2017/0140916 Ion Trap with Spatially Extended Ion Trapping Region
A mass or mass to charge ratio selective ion trap is disclosed which directs ions into a small ejection region. A RF voltage acts to confine ions in a first...
2017/0140915 SYSTEM AND METHOD FOR REDUCING THE SPACE CHARGE EFFECT IN A LINEAR ION TRAP
The present invention provides a system and a method for reducing the space charge effect in a linear ion trap. The system includes a linear ion trap, a first...
2017/0140914 ADDITION OF REACTIVE SPECIES TO ICP SOURCE IN A MASS SPECTROMETER
Disclosed is a method of inductively coupled plasma mass spectrometry (ICP-MS), comprising steps of introducing at least one sample comprising at least one...
2017/0140913 STRONG FIELD PHOTOIONIZATION ION SOURCE FOR A MASS SPECTROMETER
An ion source for a mass spectrometer comprises: an evacuated chamber having an interior receiving a gaseous sample effluent stream; a source of light pulses...
2017/0140912 SYSTEMS AND METHODS FOR ANALYZING A SAMPLE FROM A SURFACE
The invention generally relates to systems and methods for analyzing a sample from a surface. In certain aspects, the invention provides systems that include a...
2017/0140911 DEVICE FOR MANIPULATING CHARGED PARTICLES
The present invention is concerned with a device for charged particle transportation and manipulation. Embodiments provide a capability of combining positively...
2017/0140910 Photo-Dissociation of Proteins and Peptides in a Mass Spectrometer
A method of mass spectrometry is disclosed comprising directing first photons from a laser onto ions located within a 2D or linear ion guide or ion trap. The...
2017/0140909 MS/MS MASS SPECTROMETRIC METHOD AND MS/MS MASS SPECTROMETER
When, in performing MS/MS analysis on a multivalent ion originated from a target component, an analyzing operator inputs at least two values of a mass value...
2017/0140908 Ion Mobility Spectrometry Data Directed Acquisition
A method of analysing ions, comprising performing an initial multidimensional survey scan comprising separating parent ions according to a first...
2017/0140907 SPUTTERING APPARATUS AND PROCESSING APPARATUS
A sputtering apparatus includes a space defining member defining a sputtering space for forming a film on a substrate. The space defining member includes a...
2017/0140906 COOLING WATER JET PACK FOR HIGH POWER ROTARY CATHODES
A sputtering target assembly, including a cylindrical backing tube, a magnet assembly disposed within the backing tube, and a conduit disposed within the...
2017/0140905 ADVANCED OPTICAL SENSOR AND METHOD FOR PLASMA CHAMBER
An advanced optical sensor and method for detection of optical events in a plasma processing system. The method includes detecting at least one light emission...
2017/0140904 PLASMA DEVICE DRIVEN BY MULTIPLE-PHASE ALTERNATING OR PULSED ELECTRICAL CURRENT
A plasma source is provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third...
2017/0140903 METHOD OF PRODUCING PLASMA BY MULTIPLE-PHASE ALTERNATING OR PULSED ELECTRICAL CURRENT
A method of producing a plasma is provided. The method includes providing at least three hollow cathodes, including a first hollow cathode, a second hollow...
2017/0140902 CORROSION-RESISTANT COMPONENTS AND METHODS OF MAKING
A corrosion-resistant component configured for use with a semiconductor processing reactor, the corrosion-resistant component comprising: a) a ceramic...
2017/0140901 PNEUMATIC EXHAUST SYSTEM
An apparatus, for use in a processing chamber is provided. A pneumatic cylinder is provided. A manifold with a supply and an exhaust is controllably connected...
2017/0140900 UNIFORM LOW ELECTRON TEMPERATURE PLASMA SOURCE WITH REDUCED WAFER CHARGING AND INDEPENDENT CONTROL OVER RADICAL...
To generate a plasma for processing a workpiece, an electron beam is introduced into a plasma reactor chamber by radial injection using an annular electron...
2017/0140899 Etching Method For A Structure Pattern Layer Having A First Material and Second Material
Provided is a method of plasma etching on a substrate using an etchant gas mixture to meet integration objectives, the method comprising: disposing a substrate...
2017/0140898 ION GENERATOR AND METHOD OF CONTROLLING ION GENRATOR
An ion generator includes an ion source control unit that controls a gas supply unit and a plasma excitation source in accordance with a current ion source...
2017/0140897 MICROSCOPY IMAGING METHOD AND SYSTEM
Notches or chevrons with known angles relative to each other are formed on a surface of the sample, where each branch of a chevron appears in a cross-sectional...
2017/0140896 Systems and Methods for Using Multimodal Imaging to Determine Structure and Atomic Composition of Specimens
An imaging system that selectively alternates a first, non-destructive imaging mode and a second, destructive imaging mode to analyze a specimen so as to...
2017/0140895 LOW PROFILE EXTRACTION ELECTRODE ASSEMBLY
A low profile extraction electrode assembly including an insulator having a main body, a plurality of spaced apart mounting legs extending from a first face of...
2017/0140894 Device for generating a composition-controlled and intensity-controlled ionic flow and related method
A device 1 for generating a controlled ionic flow I is described. The device 1 is portable and comprises an ionization chamber 6, at least one inlet member 2...
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