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Patent # Description
2017/0141247 COMPOSITION FOR FORMING SOLAR CELL ELECTRODES AND ELECTRODES FABRICATED USING THE SAME
The present invention relates to a composition for forming solar cell electrodes which includes a conductive powder, a glass frit and an organic vehicle, and...
2017/0141246 TITANIUM OXIDE HAVING HEXAGONAL COLUMN SHAPE, METHOD OF FABRICATING THE SAME, SOLAR CELL INCLUDING THE SAME,...
A method of fabricating titanium oxide having a hexagonal column shape is provided. The fabricating method includes preparing a first mixture solution...
2017/0141245 CONDUCTIVE PASTE COMPOSITION AND SEMICONDUCTOR DEVICES MADE THEREWITH
A conductive paste composition contains a source of an electrically conductive metal, a first oxide component comprising an alkali metal vanadium oxide...
2017/0141244 METHODS FOR TREATING A POLYCARBONATE GLASS SURFACE AND FORMING DIRECTED HIERARCHICAL NANOPATTERNING AND...
A method of treating a polycarbonate glass surface, such as a bisphenol A polycarbonate, whereby the glass surface is immersed in a liquid phase polar aprotic...
2017/0141243 PHOTODETECTOR
A photodetector including a substrate, a light absorption layer arranged over the substrate, the light absorption layer including a stack including a...
2017/0141242 ANTI-REFLECTIVE AND ANTI-SOILING COATINGS WITH SELF-CLEANING PROPERTIES
Disclosed herein is a method of forming a glass coating including making a sol by hydrolyzing an organosilane in the presence of a least one solvent and at...
2017/0141241 Optical Device
Disclosed are optical devices and methods of manufacturing optical devices. An optical device can include a substrate; an optical emitter chip affixed to the...
2017/0141240 OXIDE SEMICONDUCTOR SUBSTRATE AND SCHOTTKY BARRIER DIODE
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide...
2017/0141239 NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
Nanowire structures having non-discrete source and drain regions are described. For example, a semiconductor device includes a plurality of vertically stacked...
2017/0141238 ESL TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides an ESL TFT substrate structure and a manufacturing method thereof. In the ESL TFT substrate structure, an etch stop layer (5)...
2017/0141237 FIELD-EFFECT TRANSISTOR, DISPLAY ELEMENT, DISPLAY, SYSTEM, AND METHOD OF MANUFACTURING FIELD-EFFECTIVE TRANSISTOR
A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a...
2017/0141236 TFT SUBSTRATE STRUCTURE AND MANUFACTURING METHOD THEREOF
The present invention provides a TFT substrate structure and a manufacturing method thereof. In the manufacturing method of a TFT substrate structure according...
2017/0141235 Negative Capacitance Field Effect Transistor With Charged Dielectric Material
The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a substrate; a gate stack over...
2017/0141234 SEMICONDUCTOR DEVICE, DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE, DISPLAY MODULE INCLUDING THE DISPLAY...
A change in electrical characteristics is inhibited and reliability is improved in a semiconductor device using a transistor including an oxide semiconductor....
2017/0141233 SEMICONDUCTOR FILM, TRANSISTOR, SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One...
2017/0141232 SEMICONDUCTOR STRUCTURE WITH OXIDE SEMICONDUCTOR LAYER
The present invention provides a semiconductor structure, including a base, a patterned oxide semiconductor (OS) layer, two source/drain regions, a protective...
2017/0141231 THIN FILM TRANSISTOR AND ORGANIC EL DISPLAY DEVICE
A thin film transistor includes: a substrate; an undercoat layer disposed on the substrate; an oxide semiconductor layer formed above the undercoat layer and...
2017/0141230 OXIDE SEMICONDUCTOR AND SEMICONDUCTOR DEVICE
According to one embodiment, an oxide semiconductor includes indium, gallium, and silicon. A concentration of the silicon in the oxide semiconductor is not...
2017/0141229 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial...
2017/0141228 FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
A field effect transistor comprising a substrate, at least one gate structure, spacers and strained source and drain regions is described. The at least one...
2017/0141227 METHODS OF FORMING PMOS FINFET DEVICES AND MULTIPLE NMOS FINFET DEVICES WITH DIFFERENT PERFORMANCE CHARACTERISTICS
One method disclosed includes forming first, second and third fins for a first NMOS device, a PMOS device and a second NMOS device, respectively. According to...
2017/0141226 METHODS OF FORMING PMOS AND NMOS FINFET DEVICES ON CMOS BASED INTEGRATED CIRCUIT PRODUCTS
One illustrative method disclosed herein includes, among other things, forming first and second fins, respectively, for a PMOS device and an NMOS device, each...
2017/0141225 Top Drain LDMOS
In an embodiment, this invention discloses a top-drain lateral diffusion metal oxide field effect semiconductor (TD-LDMOS) device supported on a semiconductor...
2017/0141224 SEMICONDUCTOR DEVICE
A semiconductor device comprising: a first electrode; a first semiconductor region; a second semiconductor region; a third semiconductor region; a fourth...
2017/0141223 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Trenches and n.sup.+ high impurity concentration regions are formed in a first principal surface side of a silicon carbide semiconductor substrate. In the...
2017/0141222 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A recess where an edge termination region is lower than an active region is disposed on a silicon carbide base body and an n.sup.--type silicon carbide layer...
2017/0141221 FINFET AND METHOD OF FABRICATING THE SAME
A FinFET is provided. The FinFET includes a substrate. A plurality of fin structures are defined on the substrate. A gate structure crosses each fin structure....
2017/0141220 Integrated Circuit Structure with Substrate Isolation and Un-Doped Channel
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate having a first region and a second region; a first...
2017/0141219 EPITAXIAL BUFFER LAYERS FOR GROUP III-N TRANSISTORS ON SILICON SUBSTRATES
Embodiments include epitaxial semiconductor stacks for reduced defect densities in III-N device layers grown over non-III-N substrates, such as silicon...
2017/0141218 METHOD FOR MANUFACTURING A HEMT TRANSISTOR AND HEMT TRANSISTOR WITH IMPROVED ELECTRON MOBILITY
A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure...
2017/0141217 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes one or more trench gates extending in a first direction in plan view, one or more first-conductivity-type regions spaced away...
2017/0141215 Devices Including Gate Spacer with Gap or Void and Methods of Forming the Same
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance...
2017/0141214 METHOD, APPARATUS AND SYSTEM FOR IMPROVED PERFORMANCE USING TALL FINS IN FINFET DEVICES
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a tall fin having a plurality of epitaxial regions....
2017/0141213 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source...
2017/0141212 METHOD FOR FABRICATING A NANOWIRE SEMICONDUCTOR TRANSISTOR HAVING AN AUTO-ALIGNED GATE AND SPACERS
Method of making a transistor with semiconducting nanowires, including: making a semiconducting nanowire on a support, one portion of the nanowire being...
2017/0141211 SINGLE AND DOUBLE DIFFUSION BREAKS ON INTEGRATED CIRCUIT PRODUCTS COMPRISED OF FINFET DEVICES
One illustrative integrated circuit product disclosed herein includes, among other things, a plurality of FinFET devices, each of which comprises a gate...
2017/0141210 Method of Cutting Metal Gate
A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate, forming a first metal-gate line over a first and...
2017/0141209 Semiconductor Structure with Multiple Transistors Having Various Threshold Voltages
A semiconductor structure includes first, second, and third transistor elements each having a first screening region concurrently formed therein. A second...
2017/0141208 HEMT TRANSISTOR OF THE NORMALLY OFF TYPE INCLUDING A TRENCH CONTAINING A GATE REGION AND FORMING AT LEAST ONE...
A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the...
2017/0141207 NANOSHEET MOSFET WITH FULL-HEIGHT AIR-GAP SPACER
A semiconductor device includes a gate positioned on a substrate; a nanosheet that extends through the gate, protrudes from a sidewall of the gate, and forms a...
2017/0141206 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A recombination center is formed within the bandgap of at least a silicon carbide material used to form an n.sup.- drift layer in a SiC-MOSFET. This...
2017/0141205 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure...
2017/0141204 An Array Substrate And A Method Thereof And A Display Panel Including The Same
The present invention teaches an array substrate, its manufacturing method, and a display panel using the array substrate. The array substrate contains a...
2017/0141203 METAL GATE PROCESS FOR FINFET DEVICE IMPROVEMENT
In a method for manufacturing a semiconductor device, a substrate is provided. A dummy gate is formed on the substrate. A first dielectric layer is formed to...
2017/0141202 POLYMER ON GRAPHENE
A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition...
2017/0141201 Memory First Process Flow and Device
A semiconductor device and method of making the same are disclosed. The semiconductor device includes a memory gate on a charge storage structure formed on a...
2017/0141200 FLASH CELL AND FORMING PROCESS THEREOF
A flash cell includes a gate and an erase gate. The gate is disposed on a substrate, wherein the gate includes a control gate on the substrate and a floating...
2017/0141199 Method for Forming a Field Effect Transistor Device Having an Electrical Contact
A method for fabricating a semiconductor structure is provided. The method includes providing a patterned substrate comprising a semiconductor region and a...
2017/0141198 MOSFET WITH ASYMMETRIC SELF-ALIGNED CONTACT
A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a...
2017/0141197 SELF ALIGNED REPLACEMENT METAL SOURCE/DRAIN FINFET
A fin-shaped field effect transistor (finFET) device comprising includes a substrate, an insulating layer displaced over the substrate, and a fin. The device...
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