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Patent # Description
2017/0155021 PACKAGE, PACKAGE INTERMEDIATE BODY, LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME
A package has a first electrode, a second electrode, and a first resin body. The first resin body has a retainer portion and a wall portion. The retainer...
2017/0155020 WAVELENGTH-CONVERTING MATERIAL AND APPLICATION THEREOF
A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot...
2017/0155019 LIGHT-EMITTING DIODE CHIP PACKAGES AND METHODS FOR MANUFACTURE THEREOF
A light-emitting diode chip package and a manufacturing process thereof sequentially includes a transparent layer, a fluorescent layer, a wafer layer, a...
2017/0155018 SEMICONDUCTOR LIGHT-EMITTING STRUCTURE AND SEMICONDUCTOR PACKAGE STRUCTURE THEREOF
A semiconductor light-emitting structure and a semiconductor package structure thereof are provided. The semiconductor light-emitting structure includes a...
2017/0155017 LIGHT EMITTING DEVICE
A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer...
2017/0155016 NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD OF FABRICATING THE SAME
Fabricating a high-quality nitride semiconductor crystal at a lower temperature. A nitride semiconductor crystal is fabricated by supplying onto a substrate...
2017/0155015 LIGHT-EMITTING DEVICE HAVING A PATTERNED SURFACE
A light-emitting device comprises a substrate having a top surface and a plurality of patterned units protruding from the top surface; and a light-emitting...
2017/0155014 LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME
A light-emitting element includes a sapphire substrate including: a principal surface that is in a c-plane of the sapphire substrate, and a plurality of...
2017/0155013 LED ELEMENT
An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first...
2017/0155012 MULTI-OPERATION TOOL FOR PHOTOVOLTAIC CELL PROCESSING
Multi-operation tools for photovoltaic cell processing are described. In an example, a multi-operation tool includes a conveyor system to move a photovoltaic...
2017/0155011 INFRARED DETECTOR AND METHOD OF DETECTING ONE OR MORE BANDS OF INFRARED RADIATION
A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer sensitive to radiation in only a short wavelength...
2017/0155010 INFRARED DETECTOR AND METHOD OF DETECTING ONE OR MORE BANDS OF INFRARED RADIATION
An infrared detector is provided. The infrared detector includes an absorption layer sensitive to radiation in only a short wavelength infrared spectral band,...
2017/0155009 P-TYPE AMORPHOUS OXIDE SEMICONDUCTOR INCLUDING GALLIUM, METHOD OF MANUFACTURING SAME, AND SOLAR CELL INCLUDING...
a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the...
2017/0155008 NANOWIRE-BASED SOLAR CELL STRUCTURE
The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure...
2017/0155007 SOLAR CELL MODULE AND METHOD FOR MANUFACTURING SAME
This solar cell module includes a solar cell and a wiring member. The solar cell includes a collecting electrode on a light-receiving side of a photoelectric...
2017/0155006 EDGE PROTECTED BARRIER ASSEMBLIES
The present application is directed to an assembly comprising an electronic device, and a multilayer film. The multilayer film comprises a barrier stack...
2017/0155005 SELENIZATION/SULFURIZATION PROCESS APPARATUS FOR USE WITH SINGLE-PIECE GLASS SUBSTRATE
A selenization/sulfurization process apparatus for use with a single-piece glass substrate is characterized by two chambers for heating up a glass substrate...
2017/0155004 THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL
An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and...
2017/0155003 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURNG THE SAME
To provide a semiconductor device which has transistor characteristics with little variation and includes an oxide semiconductor. The semiconductor device...
2017/0155002 MANUFACTURE METHOD OF LTPS THIN FILM TRANSISTOR AND LTPS THIN FILM TRANSISTOR
The present invention provides a manufacture method of a LTPS thin film transistor and a LTPS thin film transistor. The gate isolation layer is first etched to...
2017/0155001 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes channel layers disposed over a substrate, a source/drain region disposed over the substrate, a gate dielectric layer disposed...
2017/0155000 THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY USING THE SAME
A thin film transistor substrate includes a first thin film transistor disposed having a polycrystalline semiconductor layer, a first gate electrode on the...
2017/0154999 Recessed Transistors Containing Ferroelectric Material
Some embodiments include transistor constructions having a first insulative structure lining a recess within a base. A first conductive structure lines an...
2017/0154998 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in...
2017/0154997 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
To provide a transistor in which a channel is formed in an oxide semiconductor and which has stable electrical characteristics. To suppress shift in threshold...
2017/0154996 FIN STRUCTURE OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF ACTIVE REGION...
A method for manufacturing an active region of a semiconductor device includes forming an implanted region in a substrate. The implanted region is adjacent to...
2017/0154995 REPLACEMENT BODY FINFET FOR IMPROVED JUNCTION PROFILE WITH GATE SELF-ALIGNED JUNCTIONS
After forming an epitaxial semiconductor layer on portions of a semiconductor located on opposite sides of a sacrificial gate structure, dopants from the...
2017/0154994 METHODS OF FORMING A CONTACT STRUCTURE FOR A VERTICAL CHANNEL SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE
One illustrative method disclosed includes, among other things, forming a vertically oriented semiconductor structure above a doped well region defined in a...
2017/0154993 Reduced Gate Charge Field-Effect Transistor
In one implementation, a reduced gate charge field-effect transistor (FET) includes a drift region situated over a drain, a body situated over the drift...
2017/0154992 Transistor Device with Increased Gate-Drain Capacitance
Disclosed is a transistor device. The transistor device includes: a semiconductor body with an active region and a pad region; at least one transistor cell...
2017/0154991 Semiconductor Devices
A semiconductor device may include a pair of active patterns spaced apart from each other in a first direction, a pair of gate electrodes intersecting the pair...
2017/0154990 Silicon Germanium P-Channel FinFET Stressor Structure and Method of Making Same
A source/drain (S/D) structure includes a SiGe structure epitaxially grown and having sloped facets on a recessed fin structure disposed adjacent to a channel...
2017/0154989 Methods of Manufacturing Gallium Nitride Devices
Gallium nitride material devices and methods associated with the same. In some embodiments, the devices may be transistors which include a conductive structure...
2017/0154988 SEMICONDUCTOR DEVICE AND METHOD OF MAKING A SEMICONDUCTOR DEVICE
A semiconductor device and a method of making the same is disclosed. The device includes a substrate having an AlGaN layer located on a GaN layer for forming a...
2017/0154987 NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS AND FABRICATION METHODS THEREOF
Disclosure includes a normally-off field-effect semiconductor device and the fabrication method thereof. An antigrowth portion is formed on a template. A first...
2017/0154986 STRESS CONTROL ON THIN SILICON SUBSTRATES
Methods for stress control in thin silicon (Si) wafer-based semiconductor materials. By a specific interrelation of process parameters (e.g., temperature,...
2017/0154985 IE TYPE TRENCH GATE IGBT
In a method of further enhancing the performance of a narrow active cell IE type trench gate IGBT having the width of active cells narrower than that of...
2017/0154984 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Reduction of power consumption of a semiconductor device is aimed. The semiconductor device includes a cell region where a vertical power MOSFET is formed and...
2017/0154983 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film...
2017/0154982 FINFET WITH EPITAXIAL SOURCE AND DRAIN REGIONS AND DIELECTRIC ISOLATED CHANNEL REGION
A semiconductor device is provided that includes a pedestal of an insulating material present over at least one layer of a semiconductor material, and at least...
2017/0154981 MAKING A DEFECT FREE FIN BASED DEVICE IN LATERAL EPITAXY OVERGROWTH REGION
Electronic device fins may be formed by epitaxially growing a first layer of material on a substrate surface at a bottom of a trench formed between sidewalls...
2017/0154980 ROBUST GATE SPACER FOR SEMICONDUCTOR DEVICES
After formation of a gate structure and a lower dielectric spacer laterally surrounding the gate structure, a disposable material layer is deposited and...
2017/0154979 Dislocation SMT For FinFet Device
Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping...
2017/0154978 METHOD FOR FORMING SEMICONDUCTOR STRUCTURE WITH EPITAXIAL GROWTH STRUCTURE
Methods for forming semiconductor structures are provided. The method for manufacturing a semiconductor structure includes forming a hard mask structure over a...
2017/0154977 TRI-GATE FINFET DEVICE
A tri-gate FinFET device includes a fin that is positioned vertically above and spaced apart from an upper surface of a semiconductor substrate, wherein the...
2017/0154976 METHODS OF FABRICATING A SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes providing a substrate that includes first and second main regions and a dummy region, and forming dummy...
2017/0154975 GRAPHENE TRANSISTOR AND RELATED METHODS
A method and structure for providing high-quality transferred graphene layers for subsequent device fabrication includes transferring graphene onto a...
2017/0154974 Semiconductor Device and Method for Producing a Semiconductor Device
A method for producing a semiconductor device includes: depositing a barrier layer on a first surface of a semiconductor body having active regions of a...
2017/0154973 Multi-Gate Device and Method of Fabrication Thereof
A semiconductor device includes a source/drain feature disposed over a substrate. The source/drain feature includes a first nanowire, a second nanowire...
2017/0154972 GATE STRUCTURE AND METHOD OF FABRICATING THE SAME
A gate structure includes at least one spacer defining a gate region over a semiconductor substrate, a gate dielectric layer disposed on the gate region over...
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