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Patent # Description
2017/0162673 GATE-ALL-AROUND FIN DEVICE
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a...
2017/0162672 SBFET TRANSISTOR AND CORRESPONDING FABRICATION PROCESS
A process for manufacturing a Schottky barrier field-effect transistor is provided. The process includes: providing a structure including a control gate and a...
2017/0162671 FIN FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD TO FORM DEFECT FREE MERGED SOURCE AND DRAIN EPITAXY FOR LOW...
A method of forming a semiconductor device that includes providing a plurality of fin structures, wherein a surface of the fin structures has a first...
2017/0162670 METHODS FOR FABRICATING SEMICONDUCTOR DEVICES HAVING FIN-SHAPED PATTERNS
A method for fabricating a semiconductor device is provided. The method includes forming a first fin-shaped pattern including an upper part and a lower part on...
2017/0162669 METHOD OF FORMING THE GATE ELECTRODE OF FIELD EFFECT TRANSISTOR
This description relates to a method of forming the gate electrode of a semiconductor device, the method including providing a substrate comprising a dummy...
2017/0162668 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a semiconductor device includes forming a fin extending in a first direction. A dummy layer is formed including a plurality of...
2017/0162667 SEMICONDUCTOR MIXED GATE STRUCTURE
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises a substrate, a fin structure, a metal gate and...
2017/0162666 METAL-SEMICONDUCTOR-METAL (MSM) HETEROJUNCTION DIODE
In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a...
2017/0162665 SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME
A Schottky barrier diode includes: an n+ type of silicon carbide substrate; an n- type of epitaxial layer formed on a first surface of the n+ type of silicon...
2017/0162664 LATERAL BIPOLAR TRANSISTOR
A bipolar junction transistor comprises a semiconductor layer disposed on an insulating material, at least a portion of the semiconductor layer forming a base...
2017/0162663 GATE SPACER AND METHODS OF FORMING
Methods and structures for forming devices, such as transistors, are discussed. A method embodiment includes forming a gate spacer along a sidewall of a gate...
2017/0162662 SEMICONDUCTOR DEVICE
Machining accuracy of an IGBT region is worsened due to a height difference caused by polysilicon. Therefore, there is a problem that characteristic variation...
2017/0162661 SEMICONDUCTOR DEVICE CONTACTS
Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the...
2017/0162660 Semiconductor Device Comprising a Field Effect Transistor and Method of Manufacturing the Semiconductor Device
A semiconductor device comprises a field effect transistor in a semiconductor substrate having a first main surface. The field effect transistor comprises a...
2017/0162659 SEMICONDUCTOR DEVICE
A stable high-frequency amplification characteristic with a high power is obtained by providing a source field plate electrode in an area of a drain electrode...
2017/0162658 LDMOS with Adaptively Biased Gate-Shield
An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than...
2017/0162657 POST GROWTH DEFECT REDUCTION FOR HETEROEPITAXIAL MATERIALS
A method of reducing defects in epitaxially grown III-V semiconductor material comprising: epitaxially growing a III-V semiconductor on a substrate; patterning...
2017/0162656 INTEGRATED CMOS WAFERS
The present disclosure relates to semiconductor structures and, more particularly, to integrated CMOS wafers and methods of manufacture. The structure...
2017/0162655 SCHOTTKY BARRIER DIODE
A semiconductor device includes a semiconductor layer including a Ga.sub.2O.sub.3-based single crystal, and an electrode that is in contact with a surface of...
2017/0162654 FIELD EFFECT TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
A field effect transistor and a semiconductor device including the same are provided. The semiconductor device may include a channel layer, which is provided...
2017/0162653 SEMICONDUCTOR DEVICE HAVING GERMANIUM ACTIVE LAYER WITH UNDERLYING DIFFUSION BARRIER LAYER
Semiconductor devices having germanium active layers with underlying diffusion barrier layers are described. For example, a semiconductor device includes a...
2017/0162652 NANOWIRE DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a nanowire device is disclosed. The method includes providing a substrate, wherein the substrate comprises a pair of support pads, a...
2017/0162651 SEMICONDUCTOR DEVICE HAVING A GATE ALL AROUND STRUCTURE AND A METHOD FOR FABRICATING THE SAME
A semiconductor device includes a wire pattern spaced apart from a substrate and extended in a first direction, a gate electrode disposed around a...
2017/0162650 FINFET WITH REDUCED PARASITIC CAPACITANCE
A semiconductor device including at least one fin extending upward from a substrate and a gate on the substrate, wherein the gate includes outer sidewalls,...
2017/0162649 TRENCH-GATE TYPE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
There is provided a trench-gate type semiconductor device that can prevent breakdown of a gate insulating film caused by a displacement current flowing into a...
2017/0162648 Capacitor Formed On Heavily Doped Substrate
The teachings of the present disclosure may be applied to the manufacture and design of capacitors. In some embodiments of these teachings, a capacitor may be...
2017/0162647 SUBSTRATE RESISTOR WITH OVERLYING GATE STRUCTURE
An illustrative method includes, among other things, forming a plurality of fins. A subset of the plurality of fins is selectively removed, leaving at least a...
2017/0162646 PILLAR RESISTOR STRUCTURES FOR INTEGRATED CIRCUITRY
Integrated circuit structures including a pillar resistor disposed over a surface of a substrate, and fabrication techniques to form such a resistor in...
2017/0162645 DISPLAY DEVICE
A display device includes contact holes opened in an insulating film outside of a display area in which pixels are arranged, and having a conductive film...
2017/0162644 Display Device
A display device having a high aperture ratio and including a capacitor that can increase capacitance is provided. A pair of electrodes of the capacitor is...
2017/0162643 OLED DISPLAY, DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
An organic light emitting diode (OLED) display, a display device and a manufacturing method thereof are provided. The OLED display includes a base substrate;...
2017/0162642 LIGHT EMITTING DEVICE
The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds...
2017/0162641 DISPLAY DEVICE, METHOD OF MANUFACTURING DISPLAY DEVICE, AND ELECTRONIC APPARATUS
A display device according to the present disclosure includes: a thin film transistor with a bottom gate structure and a thin film transistor with a top gate...
2017/0162640 THIN FILM TRANSISTOR ARRAY PANEL AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME
An exemplary embodiment of the present invention provides a thin film transistor array panel and an organic light emitting diode display including the same...
2017/0162639 AMOLED BACKPLANE STRUCTURE AND MANUFACTURING METHOD THEREOF
A manufacturing method of an AMOLED backplane includes manufacturing a TFT substrate and forming a corrugation structure on the TFT substrate, which includes...
2017/0162638 METHOD FOR MANUFACTURING ORGANIC EL DISPLAY PANEL
An organic EL display panel manufacturing method including: preparing a substrate; forming at least first electrodes on the substrate; forming, by performing...
2017/0162637 DISPLAY DEVICE
A display device includes a substrate including a first surface, and a second surface opposite the first surface, and defining a through portion passing...
2017/0162636 TRANSPARENT DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME
A transparent display device that may improve light transmittance in a transmissive mode, and a method for fabricating the same are discussed. The transparent...
2017/0162634 OLED Display Device And Display Apparatus Including The Same
An OLED display device includes a substrate and an OLED display units formed on the substrate, in which n is an integer which is greater than 1. The OLED...
2017/0162633 ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
An exemplary embodiment discloses an organic light emitting display panel including a base substrate comprising first pixels configured to emit a light having...
2017/0162632 ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE
An organic light emitting diode display device can include a display panel including a plurality of pixels, at least one pixel among the plurality of pixels...
2017/0162631 ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL, ELECTRONIC DEVICE AND MANUFACTURING METHOD
The present disclosure provides an OLED display panel, an electronic device, and a manufacturing method. The OLED display panel comprises a substrate, and a...
2017/0162630 Light-Emitting Device
There is provided a light emitting device which enables a color display with good color balance. A triplet compound is used for a light emitting layer of an EL...
2017/0162629 DISPLAY SUBSTRATE, MANUFACTURING METHOD AND DRIVING METHOD THEREOF, AND DISPLAY DEVICE
A display substrate, a manufacturing method and a driving method thereof, and a display device are provided. The display substrate includes a substrate, a gate...
2017/0162628 ULTRALOW POWER CARBON NANOTUBE LOGIC CIRCUITS AND METHOD OF MAKING SAME
A method of fabricating a CMOS logic device with SWCNTs includes forming a plurality of local metallic gate structures on a substrate by depositing a metal on...
2017/0162627 METHOD FOR PRODUCING A RESISTIVE MEMORY CELL
A method for manufacturing a memory cell includes forming a stack of layers comprising a first electrode and a dielectric layer, and forming a second...
2017/0162626 ENCAPSULATION OF MAGNETIC TUNNEL JUNCTION STRUCTURES IN ORGANIC PHOTOPATTERNABLE DIELECTRIC MATERIAL
Methods and devices are provided to construct magnetic devices, such as magnetic random access memory devices, having MTJ (magnetic tunnel junction) structures...
2017/0162625 SOLID-STATE IMAGING DEVICE, METHOD FOR PRODUCING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
This solid-state imaging device 100 has: a photosensitive part that includes pixel portions 211, which are disposed in a matrix, and charge transfer parts 212...
2017/0162624 SOLID-STATE IMAGE PICKUP DEVICE, MANUFACTURING METHOD, AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state image pickup device, a manufacturing method, and an electronic apparatus, which can obtain high charge transfer...
2017/0162623 PHOTOELECTRIC CONVERSION APPARATUS AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a photoelectric conversion apparatus includes forming a first semiconductor region of a first conductivity type in a trench provided...
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