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Patent # Description
2017/0200860 ELECTRICAL CONTACT STRUCTURE FOR A SEMICONDUCTOR COMPONENT, AND SEMICONDUCTOR COMPONENT
An electrical contact structure (10) for a semiconductor component (100) is specified, comprising a transparent electrically conductive contact layer (1), on...
2017/0200859 Solvent For Manufacture Of Self-Assembled Nano-Scale LED Electrode Assembly And Method For Manufacturing...
The present disclosure relates to a method for manufacturing a self-assembled nano-scale LED electrode assembly and more particularly, to a method for...
2017/0200858 LIGHT-EMITTING DIODE MODULE HAVING LIGHT-EMITTING DIODE JOINED THROUGH SOLDER PASTE AND LIGHT-EMITTING DIODE
Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting...
2017/0200857 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a...
2017/0200856 OPTICAL DEVICE INCLUDING THREE-COUPLED QUANTUM WELL STRUCTURE HAVING ASYMMETRIC MULTI-ENERGY LEVELS
Provided is an optical device including an active layer, which includes two outer barriers and a coupled quantum well between the two outer barriers. The...
2017/0200855 METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT
A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a...
2017/0200854 SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
The disclosed invention relates to a semiconductor light-emitting element comprising: a plurality of semiconductor layers which are provided with a growth...
2017/0200853 LOW WARPAGE WAFER BONDING THROUGH USE OF SLOTTED SUBSTRATES
In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics...
2017/0200852 METHOD FOR MAKING CRYSTALLINE SILICON-BASED SOLAR CELL, AND METHOD FOR MAKING SOLAR CELL MODULE
A manufacturing method includes steps of forming a texture on a surface of a single-crystalline silicon substrate, cleaning the surface of the ...
2017/0200851 DEVICE INCORPORATING AN OXIDE FILM AND METHOD OF FABRICATING THE SAME
A device and a method of forming a device. The method comprises forming an oxide material film; forming two metal electrodes on the oxide material film, the...
2017/0200850 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
Disclosed is a solar cell including a semiconductor substrate, a protective-film layer formed over one surface of the semiconductor substrate, a first...
2017/0200849 Structures for Increased Current Generation and Collection in Solar Cells with Low Absorptance and/or Low...
The present disclosure generally relates to a solar cell device that includes a substrate comprising a front side surface and a backside surface; an epitaxial...
2017/0200848 COMPOUND KOHLER SOLAR CONCENTRATOR WITH OPTIONAL SPECTRUM SPLITTING PHOTOVOLTAIC APPARATUS
A high concentration photovoltaic device has a Fresnel lens having a front side and a back side, which may be mounted on a cover plate, and a mirror behind the...
2017/0200847 PHOTOVOLTAIC DEVICE AND DISPLAY EQUIPMENT
A photovoltaic device and display equipment are provided. The photovoltaic device includes at least one photoelectric conversion sheet and a light guide plate,...
2017/0200846 METHOD FOR INTERCONNECTING SOLAR CELLS
A photovoltaic module comprises a back substrate having a plurality of conductive interconnects on top thereof. A conductive interconnect includes a first...
2017/0200845 Structures for Increased Current Generation and Collection in Solar Cells with Low Absorptance and/or Low...
The present disclosure generally relates to a solar cell device that a first Bragg reflector disposed below a first solar cell and a second Bragg reflector...
2017/0200844 Method For Manufacturing Crystalline Silicon Solar Cell Modules
The disclosure relates to solar cell, and especially to a method for manufacturing a crystalline silicon solar cell module. The method includes: a) providing a...
2017/0200843 RESIN-CONTAINING SOLAR CELL MODULE
A solar cell module includes solar cells. encapsulants are layered on surfaces of the solar cells. A glass substrate is layered on the encapsulants. The solar...
2017/0200842 Photovoltaic Modules Comprising Organoclay
PV modules with improved volume resistivity comprise an encapsulant film and a polyolefin backsheet at least one of which comprises organoclay.
2017/0200841 PHOTOELECTRIC CONVERSION ELEMENT HAVING QUANTUM STRUCTURE USING INDIRECT TRANSITION CONDUCTOR MATERIAL
A photoelectric conversion element includes a photoelectric conversion layer having the quantum structure and utilizes intersubband transition in a conduction...
2017/0200840 METHOD FOR FABRICATION OF COPPER-INDIUM GALLIUM OXIDE AND CHALCOGENIDE THIN FILMS
A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride...
2017/0200839 SOLAR CELL, METHOD FOR MANUFACTURING SAME, SOLAR CELL MODULE, AND METHOD FOR MANUFACTURING SAME
A solar cell is provided with an electrode layer on a photovoltaic conversion section including a crystalline silicon substrate. Deposition of the electrode...
2017/0200838 PROCESSES FOR UNIFORM METAL SEMICONDUCTOR ALLOY FORMATION FOR FRONT SIDE CONTACT METALLIZATION AND PHOTOVOLTAIC...
A photovoltaic device is provided that includes a semiconductor substrate including a p-n junction with a p-type semiconductor portion and an n-type...
2017/0200837 POLY-SILOXANE CONTAINING ORGANIC VEHICLE FOR ELECTROCONDUCTIVE PASTES
The invention relates to a passivated emitter rear solar cell, comprising a silicon substrate having a front and back surface, a rear passivation layer on the...
2017/0200836 WIRING MODULE
This wiring module includes: a wiring substrate; a base portion at which the wiring substrate is placed; and an adhesive layer configured to adhere the wiring...
2017/0200835 METHOD FOR SELECTIVELY COLORING METAL CONTACTS IN OPTOELECTRONIC DEVICE
A method of fabricating an optoelectronic device includes the steps of providing a semiconductor unit and forming a plurality of metal contacts on a surface of...
2017/0200834 Integrated MOS Varicap, and Voltage Controlled Oscillator and Filter Having Same
Each of varicaps 50A to 50C configured to be connected in parallel is an MOS capacitor III produced under a common and single process condition. Each of the...
2017/0200833 THREE DIMENSIONAL VERTICALLY STRUCTURED MISFET/MESFET
According to one embodiment, an apparatus includes a substrate, and at least one three dimensional (3D) structure above the substrate. The substrate and the 3D...
2017/0200832 NANOWIRE TRANSISTOR STRUCTURES WITH MERGED SOURCE/DRAIN REGIONS USING AUXILIARY PILLARS
A nanowire transistor structure is fabricated by using auxiliary epitaxial nucleation source/drain fin structures. The fin structures include semiconductor...
2017/0200831 THIN-FILM TRANSISTOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS CONTAINING THE SAME, AND METHOD FOR FABRICATING...
The present disclosure provides a thin-film transistor. The thin-film transistor includes a substrate including at least one trench; at least one electrode in...
2017/0200830 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
The present disclosure provides a thin film transistor and a method for manufacturing the same, an array substrate and a display device. The method for...
2017/0200829 THIN-FILM TRANSISTOR
According to one embodiment, a thin-film transistor includes a first insulating film, an oxide semiconductor layer provided on the first insulating film and a...
2017/0200828 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of...
2017/0200827 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A semiconductor device (100) includes a thin film transistor (5) provided on a substrate and including a gate electrode (12), a gate insulating layer (20) in...
2017/0200826 PMOS TRANSISTOR AND FABRICATION METHOD THEREOF
The present disclosure provides PMOS transistors and fabrication methods thereof. An exemplary fabrication process of a PMOS transistor includes providing a...
2017/0200825 METHOD OF FORMING A FINFET STRUCTURE WITH HIGH QUALITY EPI FILM
A method of forming a semiconductor structure includes the following operations: (i) forming a feature comprising germanium over a substrate; (ii) removing a...
2017/0200824 SEMICONDUCTOR DEVICE HAVING EPITAXIAL LAYER WITH PLANAR SURFACE AND PROTRUSIONS
A semiconductor device includes: a substrate; a gate structure on the substrate; and an epitaxial layer in the substrate adjacent to the gate structure, in...
2017/0200823 SEMICONDUCTOR DEVICE HAVING ASYMMETRIC ACTIVE REGION AND METHOD OF FORMING THE SAME
Provided are a semiconductor device and a method of forming the same. The semiconductor device includes an active region defined by an isolation layer. A...
2017/0200822 DOUBLE GATE TRENCH POWER TRANSISTOR AND MANUFACTURING METHOD THEREOF
A double gate trench power transistor and manufacturing method thereof are provided. The double gate trench power transistor gate structure includes an...
2017/0200821 CONTACT STRUCTURES, FINFET DEVICES AND METHODS OF FORMING THE SAME
Contact structures, FinFET devices and methods of forming the same are disclosed. One of the contact structures includes a source/drain region, a mask layer, a...
2017/0200820 THREE DIMENSIONAL VERTICALLY STRUCTURED ELECTRONIC DEVICES
According to one embodiment, an apparatus includes at least one vertical transistor, where the at least one vertical transistor includes: a substrate including...
2017/0200819 SWITCHING DEVICE
A switching device includes first-third semiconductor layers, a gate insulating film, and a gate electrode. The first semiconductor layer is of a first...
2017/0200818 SEMICONDUCTOR DEVICE
A semiconductor device includes a first nitride semiconductor layer, a second nitride semiconductor layer on the first nitride semiconductor layer and having a...
2017/0200817 High Electron Mobility Transistor with Carrier Injection Mitigation Gate Structure
A method includes providing a heterostructure body with a buffer region, and a barrier region disposed on the buffer region, and forming a gate structure for...
2017/0200816 EPITAXIAL WAFER FOR HETEROJUNCTION BIPOLAR TRANSISTOR AND HETEROJUNCTION BIPOLAR TRANSISTOR
An epitaxial wafer for a heterojunction bipolar transistor and a heterojunction bipolar transistor that are capable of further reducing a turn-on voltage are...
2017/0200815 CASIMIR-EFFECT DEVICE
A method of controlling a Casimir-effect device includes applying a voltage to a field-effect gate of the Casimir-effect device. The Casimir-effect device...
2017/0200814 MANUFACTURING METHOD OF METAL OXIDE SEMICONDUCTOR THIN FILM TRANSISTOR
A manufacturing method of a metal oxide semiconductor thin film transistor is provided. The manufacturing method includes following steps. A gate, a gate...
2017/0200813 METHOD OF MANUFACTURING PIXEL STRUCTURE
A method of manufacturing a pixel structure is provided. A gate and a gate insulating layer are formed on a substrate. A channel layer is formed on the gate...
2017/0200812 METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH FILLED GATE LINE END RECESSES
A method for making a semiconductor device may include forming first and second spaced apart semiconductor active regions with an insulating region...
2017/0200811 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device and a method of manufacturing the same, the semiconductor device includes a fin shaped structure, a gate structure, an epitaxial layer,...
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