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Patent # Description
2017/0200810 FIN FIELD-EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF
The present disclosure provides fin field-effect transistors and fabrication methods thereof. An exemplary fabrication process includes providing a substrate...
2017/0200809 METHOD TO IMPROVE GATE DIELECTRIC QUALITY FOR FINFET
A method for manufacturing a semiconductor device includes providing a substrate structure comprising a substrate, a plurality of fins on the substrate and a...
2017/0200808 SEMICONDUCTOR DEVICE AND RELATED MANUFACTURING METHOD
A semiconductor device may include the following elements: a fin member including a first doped portion, a second doped portion, and a semiconductor portion...
2017/0200807 SELF ALIGNED GATE SHAPE PREVENTING VOID FORMATION
A semiconductor device that includes a first fin structure in a first portion of a substrate, and a second fin structure in a second portion of the substrate,...
2017/0200806 Epitaxial Substrate for Semiconductor Device and Method for Manufacturing Same
Provided is a group 13 nitride epitaxial substrate with which the HEMT device having superior characteristics can be manufactured. This epitaxial substrate is...
2017/0200805 METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
After a trench is formed, a deposition film is formed on the front surface of a base material and an inner wall of the trench such that a thickness of a...
2017/0200804 METHOD OF FORMING A VERTICAL DEVICE
According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming...
2017/0200803 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device is provided. The Semiconductor device includes a first active fin and a second active fin disposed on a substrate. A first gate...
2017/0200802 SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
A semiconductor device includes an active pattern, a gate electrode, a gate capping pattern, and a gate spacer. The active pattern extends in a first direction...
2017/0200801 DEVICES AND METHODS INCLUDING AN ETCH STOP PROTECTION MATERIAL
Protective dielectrics are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory may include a protective dielectric...
2017/0200800 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME
A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a...
2017/0200799 Combined Gate and Source Trench Formation and Related Structure
A semiconductor device includes a gate trench in a semiconductor substrate, a source trench in the semiconductor substrate, the source trench having a first...
2017/0200798 Method of Pulling-Back Sidewall Metal Layer
A method of fabricating a semiconductor device includes forming a first, a second and a third trenches extending through a dielectric layer over a substrate,...
2017/0200797 METHODS, APPARATUS AND SYSTEM FOR PROVIDING SOURCE-DRAIN EPITAXY LAYER WITH LATERAL OVER-GROWTH SUPPRESSION
At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor...
2017/0200796 TRANSISTOR WITH QUANTUM POINT CONTACT
Methods and apparatus for quantum point contacts. In an arrangement, a quantum point contact device includes at least one well region in a portion of a...
2017/0200795 Transistor Device with Segmented Contact Layer
Disclosed is a transistor device. The transistor device includes a plurality of device cells each having an active device region integrated in a semiconductor...
2017/0200794 SEGMENTED FIELD PLATE STRUCTURE
A device includes a transistor formed over a substrate. The transistor includes a source structure, a drain structure, and a gate structure. A dielectric layer...
2017/0200793 METHOD FOR FORMING STEPPED OXIDE ON A SUBSTRATE
A method for forming a steeped oxide on a substrate is described: successively forming a first pad oxide layer, a nitride layer, a second pad oxide layer and a...
2017/0200792 SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING
Methods of MOL S/D contact patterning of RMG devices without gouging of the Rx area or replacement of the dielectric are provided. Embodiments include forming...
2017/0200791 Semiconductor Device Including an Edge Construction with Straight Sections and Corner Sections
A semiconductor device includes a transistor cell area with active transistor cells including source zones electrically connected to a first load electrode....
2017/0200789 GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR CRYSTAL
The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking...
2017/0200788 SILICON CARBIDE SEMICONDUCTOR SWITCHING DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR...
A silicon carbide semiconductor switching device having a planar metal oxide semiconductor insulated gate structure. The silicon carbide semiconductor...
2017/0200787 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVING DEVICE, VEHICLE...
A semiconductor device according to an embodiment includes an n-type SiC region, an electrode in contact with the SiC region, and a region including oxygen,...
2017/0200786 FABRICATION OF TRANSISTOR-BASED SEMICONDUCTOR DEVICE USING CLOSED-LOOP FINS
Shaped mandrels are used to form closed-loop spacer(s) around the shaped mandrels, after which the shaped mandrels are removed, leaving a closed-loop fin. A...
2017/0200785 SEMICONDUCTOR DEVICE HAVING SELF-ISOLATING BULK SUBSTRATE AND METHOD THEREFOR
In one embodiment, a semiconductor device comprises a bulk semiconductor substrate that includes a first conductivity type floating buried doped region bounded...
2017/0200784 SEMICONDUCTOR DEVICE
To provide an optimal structure for electrically connecting an MOSFET region, a FWD region, and an IGBT region in parallel within one semiconductor chip by...
2017/0200783 ELECTROSTATIC DISCHARGE PROTECTION DEVICE
The invention provides an electrostatic discharge (ESD) protection device formed by a Schottky diode. An exemplary embodiment of an ESD protection device...
2017/0200782 CAPACITOR OF SEMICONDUCTOR INTEGRATED CIRCUIT AND METHOD FOR MANUFACTURING THE SAME
Provided are a capacitor of a semiconductor integrated circuit and a method for manufacturing the same, for example a metal-insulator-metal (MIM) type...
2017/0200781 ORGANIC LIGHT EMITTING DIODE DISPLAY UTILIZING A CURVED SEMICONDUCTOR LAYER
An organic light emitting diode (OLED) display including: a substrate; a semiconductor layer disposed on the substrate and including a switching semiconductor...
2017/0200780 CIRCULAR DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR
The present invention relates to a circular display device including: a substrate (21) having a circular shape; a plurality of data lines (15) formed on the...
2017/0200779 DISPLAY DEVICE
A display device includes a stretchable display panel including a first display area and a second display area, the second display area extending from the...
2017/0200778 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes a substrate including a sub-pixel region and a transparent region, a first semiconductor element in the...
2017/0200777 Array Substrate, Display Panel and Display Device
The present invention belongs to the field of display technology, and particularly relates to an array substrate, a display panel and a display device. The...
2017/0200776 ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF
An organic light emitting diode display according to an exemplary embodiment of the present disclosure includes: a substrate; a first electrode disposed on the...
2017/0200775 DISPLAY DEVICE
A display device is disclosed. In one aspect, the display device includes a substrate including a display area and a peripheral area adjacent to the display...
2017/0200774 DISPLAY DEVICE
A display device may include a light-emitting element and a controllable element. The light-emitting element may emit a light. The controllable element may...
2017/0200773 Method for Manufacturing Display Substrate, Display Substrate and Display Device
A method for manufacturing a display substrate, a display substrate and a display device are disclosed. The method includes: forming a thin-film transistor...
2017/0200772 SUBSTRATE AND METHOD OF MANUFACTURING PANEL
A substrate includes: a first panel region which includes a plurality of first cells disposed on the substrate which is a single substrate; a second panel...
2017/0200771 DISPLAY APPARATUS
A display apparatus includes a unit pixel comprising a red sub pixel, a green sub pixel, a first blue sub pixel, and a second blue sub pixel. Each of the sub...
2017/0200770 Tandem Organic Light-Emitting Diode, Array Substrate and Display Device
A tandem organic light-emitting diode, an array substrate and a display device are provided. The tandem organic light-emitting diode includes an anode, a hole...
2017/0200769 Resistive Change Element Array Using Vertically Oriented Bit Lines
The present disclosure is directed toward carbon based diodes, carbon based resistive change memory elements, resistive change memory having resistive change...
2017/0200768 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
Variable resistance memory devices are provided. A variable resistance memory device includes first and second conductive lines, and a variable resistance...
2017/0200767 MAGNETIC ELEMENT AND METHOD OF FABRICATION THEREOF
There is provided a magnetic element including a reference layer made of a ferromagnetic material and having a fixed or pinned magnetization direction, a free...
2017/0200766 MAGNETIC MULTILAYER STRUCTURE
A mechanism is provided for an integrated laminated magnetic device. A substrate and a multilayer stack structure form the device. The multilayer stack...
2017/0200765 DISPLAY DEVICE USING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING
A display device include a substrate including a wiring electrode; an adhesive layer disposed on the substrate; a plurality of semiconductor light emitting...
2017/0200764 SEMICONDUCTOR OPTOELECTRONIC DEVICE WITH AN INSULATIVE PROTECTION LAYER AND THE MANUFACTURING METHOD THEREOF
The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the...
2017/0200763 METHOD FOR MANUFACTURING IMAGE SENSOR STRUCTURE HAVING WIDE CONTACT
Methods for forming image sensor structures are provided. The method includes forming an isolation structure in a substrate and forming a first light sensing...
2017/0200762 Fabrication and Operation of Multi-Function Flexible Radiation Detection Systems
Curved, flexible arrays of radiation detectors are formed by using standard silicon semiconductor processing materials and techniques and additional...
2017/0200761 IMAGE SENSOR
The present invention provides an image sensor. An image sensor include a pixel array. The pixel array includes: a plurality of pixels; and an isolation...
2017/0200760 Plasmonic-Nanostructure Sensor Pixel
A first plasmonic-nanostructure sensor pixel includes a semiconductor substrate and a plurality of metal pillars. The semiconductor substrate has a top surface...
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