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Patent # Description
2017/0222012 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
A manufacturing method for a semiconductor device is provided. The method comprises: providing a semiconductor substrate (200); sequentially forming an oxide...
2017/0222011 Gate Metal Structure for Compound Semiconductor Devices
An improved gate metal structure for compound semiconductor devices comprises sequentially a compound semiconductor substrate, a Schottky barrier layer, an...
2017/0222010 Method for Manufacturing a Semiconductor Device Having Silicide Layers
A method for manufacturing a semiconductor device includes providing a semiconductor substrate having a first side. A trench having a bottom is formed. The...
2017/0222009 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device according to the present invention includes: a semiconductor layer including a first conductivity type semiconductor region and a second...
2017/0222008 SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME
In a method of manufacturing a semiconductor device, a first contact hole is formed in one or more dielectric layers disposed over a source/drain region or a...
2017/0222007 SEMICONDUCTOR STRUCTURE WITH CHANGEABLE GATE LENGTH AND METHOD FOR FORMING THE SAME
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a nanowire structure formed over...
2017/0222006 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The...
2017/0222005 Self-Aligned Metal Gate Etch Back Process And Device
A method of forming a semiconductor device includes receiving a device having a substrate and a first dielectric layer surrounding a gate trench. The method...
2017/0222004 SEMICONDUCTOR DEVICE AND TRANSMITTER
An amplifier has a plurality of gate finger electrodes, two gate connection electrodes, a plurality of source electrodes and a plurality of drain electrodes,...
2017/0222003 SEMICONDUCTOR STRUCTURE
A semiconductor process includes the following step. A metal gate strip and a cap layer are sequentially formed in a trench of a dielectric layer. The cap...
2017/0222002 Semiconductor Device Structure for Improved Performance and Related Method
A semiconductor device includes a vertical gate electrode in a gate trench in a semiconductor substrate, and a lateral gate electrode over the semiconductor...
2017/0222001 SEMICONDUCTOR DEVICE
A semiconductor device includes: diffusion layers that are formed over a semiconductor substrate in a first direction, that are separated from one another by...
2017/0222000 SEMICONDUCTOR DEVICES, FINFET DEVICES AND METHODS OF FORMING THE SAME
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the...
2017/0221999 INTEGRATION OF III-V DEVICES ON SI WAFERS
An insulating layer is conformally deposited on a plurality of mesa structures in a trench on a substrate. The insulating layer fills a space outside the mesa...
2017/0221998 SILICON CARBIDE SEMICONDUCTOR DEVICE
An object of the present invention is to provide a silicon carbide semiconductor device with which the electric field at the time of switching is relaxed and...
2017/0221997 METHOD OF PREPARING GRAPHENE-BASED THIN-FILM LAMINATE AND GRAPHENE-BASED THIN-FILM LAMINATE PREPARED USING THE SAME
Provided are a method of preparing a graphene-based thin-film laminate and the graphene-based thin-film laminate prepared by using the method. The method may...
2017/0221996 GRAPHENE-BASED LAMINATE AND METHOD OF PREPARING THE SAME
Provided are a graphene-based laminate and a method of preparing the graphene-based laminate. The graphene-based laminate may include a substrate; a graphene...
2017/0221995 SPLIT-ELECTRODE VERTICAL CAVITY OPTICAL DEVICE
A split electrode vertical cavity optical device includes an n-type ohmic contact layer, first through fifth ion implant regions, cathode and anode electrodes,...
2017/0221994 SEMICONDUCTOR SWITCH DEVICE AND A METHOD OF MAKING A SEMICONDUCTOR SWITCH DEVICE
A semiconductor switch device for switching an RF signal and a method of making the same. The device includes a first semiconductor region having a first...
2017/0221993 STRAINED SILICON GERMANIUM FIN WITH BLOCK SOURCE/DRAIN EPITAXY AND IMPROVED OVERLAY CAPACITANCE
A semiconductor structure is provided including a strained silicon germanium alloy fin that can be employed as a channel material for a FinFET device and...
2017/0221992 SACRIFICIAL LAYER FOR CHANNEL SURFACE RETENTION AND INNER SPACER FORMATION IN STACKED-CHANNEL FETS
Field effect transistors include a stack of nanosheets of vertically arranged channel layers. A source and drain region is positioned at respective ends of the...
2017/0221991 NANOWIRE SEMICONDUCTOR DEVICE INCLUDING LATERAL-ETCH BARRIER REGION
A semiconductor device includes a semiconductor-on-insulator water having a buried layer. The buried layer includes therein opposing etch barrier regions and a...
2017/0221990 NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK
Non-planar semiconductor devices having group III-V material active regions with multi-dielectric gate stacks are described. For example, a semiconductor...
2017/0221989 Semiconductor Device with Superjunction Structure and Transistor Cells in a Transition Region Along a...
A semiconductor device includes a transistor cell region and a transition region. The transistor cell region includes a first portion of a super junction...
2017/0221988 Method of Manufacturing Semiconductor Devices Including Deposition of Crystalline Silicon in Trenches
Trenches are formed in a semiconductor layer of a semiconductor substrate. A mixture that contains trichlorosilane and hydrogen gas is fed into a process...
2017/0221987 Semiconductor Device and a Method for Forming a Semiconductor Device
A method for forming a semiconductor device includes forming an oxide layer on a semiconductor substrate. A first portion of the oxide layer forms a gate oxide...
2017/0221986 COPOLAR INTEGRATED DIODE
The present invention belongs to the technical field of semiconductors and discloses a copolar integrated diode, including a plurality of diode structures...
2017/0221985 SEMICONDUCTOR DEVICE FABRICATING METHOD AND SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device, the method including: forming a lower electrode on a substrate; forming a first insulating film covering a...
2017/0221984 POWER MODULE
Provided is a power module having a sufficient space in which a large electronic component in size is disposed, and having yield strength against external...
2017/0221983 IN-SITU DOPED THEN UNDOPED POLYSILICON FILLER FOR TRENCHES
A method of fabricating an integrated circuit (IC) includes etching a trench in a semiconductor layer on a substrate having an aspect ratio (AR).gtoreq.5 and a...
2017/0221982 ORGANIC LIGHT EMITTING DISPLAY DEVICE
An organic light emitting display device includes substrates, connection substrates, sub-pixel structures, a thin film encapsulation structure, and a...
2017/0221981 DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE
A display device according to the invention includes: a first substrate that includes a flexible substrate, is segmented into a display area and a non-display...
2017/0221980 LIGHT EMITTING DEVICE AND ELECTRONIC APPARATUS
There is provided a light emitting device including: a semiconductor substrate; a plurality of pixel circuits that is disposed in a display region of the...
2017/0221979 DISPLAY APPARATUS
A display apparatus includes: a scan line extending in a first direction; a first data line and a second data line extending in a second direction crossing the...
2017/0221978 DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME
Provided is a display device including: a first wiring over an insulating surface; a sidewall over the insulating surface and covering a side surface of the...
2017/0221977 DISPLAY DEVICE WITH TRANSISTOR SAMPLING FOR IMPROVED PERFORMANCE
A display device including a pixel array having a plurality of pixels arranged in a matrix form, each of the pixels including a sampling transistor configured...
2017/0221976 DISPLAY DEVICE
A display device may include a light emitting element, a buffer layer, a gate insulation layer, and a switching element. A refractive index of the gate...
2017/0221975 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of...
2017/0221974 DISPLAY DEVICE
A display device is comprising an insulating layer provided above a substrate, a pixel electrode provided on the insulating layer, a bank layer covering a...
2017/0221973 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS
Provided are an organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes a...
2017/0221972 ORGANIC LIGHT-EMITTING DIODE DISPLAY SUBSTRATE, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND RELATED OPERATING...
The present disclosure provides an organic light-emitting diode (OLED) display substrate. The OLED display substrate includes a substrate and a plurality of...
2017/0221971 ORGANIC LIGHT EMITTING DISPLAY PANEL AND FORCE-SENSING DISPLAY DEVICE
An organic light emitting display panel is provided. The organic light emitting display panel includes a first substrate; a second substrate disposed to the...
2017/0221970 DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A display device includes a first substrate, a second substrate comprising a pixel portion configured to display an image, and a dummy portion spaced from the...
2017/0221969 QUANTUM DOT LED AND OLED INTEGRATION FOR HIGH EFFICIENCY DISPLAYS
Displays including hybrid pixels including an OLED subpixel and QD-LED subpixel are described. In an embodiment, OLED and QD-LED stacks are integrated into the...
2017/0221968 THIN-FILM TRANSISTOR ARRAY AND METHOD OF MANUFACTURING THE SAME
A thin-film transistor array includes a substrate and thin-film transistors positioned in matrix on the substrate. The thin-film transistors each include...
2017/0221967 FLEXIBLE ARRAY SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
A flexible array substrate structure and manufacturing method thereof are disclosed, in which the patterning process of an organic semi-conductive layer is...
2017/0221966 ARTIFICIAL NEURON SEMICONDUCTOR ELEMENT HAVING THREE-DIMENSIONAL STRUCTURE AND ARTIFICIAL NEURON SEMICONDUCTOR...
An artificial neuron semiconductor device having a three-dimensional structure includes a first electrode to which a clock signal is applied, a second...
2017/0221965 METHODS OF FORMING PHASE CHANGE MEMORY APPARATUSES
Phase change memory apparatuses include memory cells including phase change material, bit lines electrically coupled to aligned groups of at least some of the...
2017/0221964 MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY
According to one embodiment, a magnetic memory element comprises a first magnetic unit, a second magnetic unit, a first insulating unit, a first electrode, a...
2017/0221963 PIXILATED DISPLAY DEVICE BASED UPON NANOWIRE LEDS AND METHOD FOR MAKING THE SAME
A pixelated display device and a method for making the same are disclosed. The device may include an array of nanowire LEDs located above a substrate. When the...
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