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Patent # Description
2017/0221962 SEMICONDUCTOR LIGHT EMITTING ELEMENT
According to one embodiment, a semiconductor light emitting element (110) includes a metal layer (40), a first to a fourth semiconductor layers (10a, 20a, 10b,...
2017/0221961 OPTICAL DEVICES, IN PARTICULAR COMPUTATIONAL CAMERAS, AND METHODS FOR MANUFACTURING THE SAME
A method for manufacturing one or more optical devices, each comprising a first member and a second member, and a spacer arranged between the first and second...
2017/0221960 CONTACT IMAGE SENSOR
A contact image sensor is disclosed in the present invention. The contact image sensor includes: a substrate; an array of sensing units, formed above the...
2017/0221959 IR DETECTOR ARRAY DEVICE
We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors,...
2017/0221958 IMAGE SENSOR
With an image sensor in which the amplifier circuit is disposed at each pixel, there is such an issue that the threshold voltage of the transistor fluctuates...
2017/0221957 IMAGING DEVICE AND ELECTRONIC APPARATUS
An imaging device includes: a photoelectric conversion region that generates photovoltaic power for each pixel depending on irradiation light; and a first...
2017/0221956 SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS
A solid-state imaging device has a first substrate and a second substrate. The first substrate has a plurality of first photoelectric conversion units. The...
2017/0221955 SEMICONDUCTOR INTEGRATED CIRCUIT, ELECTRONIC DEVICE, SOLID-STATE IMAGING APPARATUS, AND IMAGING APPARATUS
A semiconductor integrated circuit includes a first semiconductor substrate in which a part of an analog circuit is formed between the analog circuit and a...
2017/0221954 STACKED-DIE IMAGE SENSORS WITH SHIELDING
A stacked-die image sensor may be provided with an array of image pixels. The stacked-die image sensor may include at least first and second integrated circuit...
2017/0221953 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
A step of forming a connecting member configured to electrically connect a first conductive line and a second conductive line includes a phase of perforating a...
2017/0221952 IMAGE SENSOR CHIP SIDEWALL INTERCONNECTION
An image sensor chip having a sidewall interconnect structure to bond and/or electrically couple the image sensor chip to a package substrate is provided. The...
2017/0221951 THROUGH-SEMICONDUCTOR-VIA CAPPING LAYER AS ETCH STOP LAYER
A method of image sensor fabrication includes providing a semiconductor material, an insulation layer, and a logic layer, where the semiconductor material...
2017/0221950 Metal Block and Bond Pad Structure
In some embodiments, the present disclosure relates to an integrated chip (IC) structure having a conductive blocking structure configured prevent radiation...
2017/0221949 TWO-DIMENSIONAL SOLID-STATE IMAGE CAPTURE DEVICE AND POLARIZATION-LIGHT DATA PROCESSING METHOD THEREFOR
A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple...
2017/0221948 IMAGE SENSOR WITH REDUCED SPECTRAL AND OPTICAL CROSSTALK AND METHOD FOR MAKING THE IMAGE SENSOR
An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection...
2017/0221947 IMAGING DEVICE
In one general aspect, the techniques disclosed here feature an imaging device that includes: a semiconductor substrate; a first pixel cell including a first...
2017/0221946 IMAGE SENSOR
An image sensor includes a control circuit and pixels. Each pixel includes: a photosensitive area, a substantially rectangular storage area adjacent to the...
2017/0221945 SYSTEM AND METHOD FOR SUB-COLUMN PARALLEL DIGITIZERS FOR HYBRID STACKED IMAGE SENSOR USING VERTICAL INTERCONNECTS
Embodiments of a hybrid imaging sensor and methods for pixel sub-column data read from the within a pixel array.
2017/0221944 SOLID-STATE IMAGING DEVICE
A solid-state imaging device includes: pixels arranged in a matrix; a vertical signal line provided for each column, conveying a pixel signal; a power line...
2017/0221942 SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF
A semiconductor device has a chip region including a back-side illumination type photoelectric conversion element, a mark-like appearance part, a pad...
2017/0221941 BACKSIDE ILLUMINATED (BSI) CMOS IMAGE SENSOR (CIS) WITH A RESONANT CAVITY AND A METHOD FOR MANUFACTURING THE...
A backside illuminated semiconductor image sensor that includes a Fabry-Perot resonator tuned to absorb near infrared (NIR) radiation; wherein the Fabry-Perot...
2017/0221940 SEMICONDUCTOR STRUCTURE AND IMAGE SENSOR
A semiconductor structure includes a substrate having a front surface and a back surface. The semiconductor structure further includes a first isolation...
2017/0221939 FUNCTIONAL ELEMENT AND ELECTRONIC APPARATUS
A functional element of an embodiment of the technology includes: a first region and a ring-like second region on a top surface of a semiconductor layer having...
2017/0221938 ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
The present disclosure provides an array substrate, a manufacturing method thereof and a display device. The array substrate comprises a base substrate; a...
2017/0221937 EXPOSURE MASK AND METHOD OF MANUFACTURING A SUBSTRATE USING THE EXPOSURE MASK
An exposure mask includes a first transmission portion, a second transmission portion, and a blocking portion. The first transmission portion is configured to,...
2017/0221936 DISPLAY APPARATUS AND ELECTRONIC APPARATUS
Disclosed herein is a display apparatus, including: a plurality of subpixels disposed adjacent each other and forming one pixel which forms a unit for...
2017/0221935 ARRAY SUBSTRATE AND DISPLAY DEVICE
An array substrate and a display device are provided for solving a problem of drift of an I-V curve of a thin film transistor because the oxide active layer is...
2017/0221934 DISPLAY DEVICE
A display device made of a TFT substrate and a driver IC is configured to eliminate bad connection between them. On the driver IC connected to the TFT...
2017/0221933 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
In a transistor including an oxide semiconductor layer, an oxide insulating layer is formed so as to be in contact with the oxide semiconductor layer. Then,...
2017/0221932 E-BOOK READER
An e-book reader including a display panel having a thin film transistor with stable electrical characteristics is provided. Alternatively, an e-book reader...
2017/0221931 SEMICONDUCTOR DEVICE
Disclosed is a semiconductor device having a first transistor and a second transistor over the first transistor. The first transistor includes a first...
2017/0221930 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A thin film transistor array substrate, a method for manufacturing the same and a liquid crystal panel are provided. The film transistor array substrate has a...
2017/0221929 MANUFACTURE METHOD OF LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE AND LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE
The present invention provides a manufacture method of a Low Temperature Poly-silicon TFT substrate and a Low Temperature Poly-silicon TFT substrate. In the...
2017/0221928 ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF
An array substrate and a manufacturing method thereof are provided. The method has steps of: forming a buffer layer, a light-shading layer, and a whole...
2017/0221927 DISPLAY SUBSTRATE AND WEARABLE DEVICE
A display substrate and a wearable device are disclosed. The display substrate includes a display region and a peripheral region, and the display region has a...
2017/0221926 METALLIZED JUNCTION FINFET STRUCTURES
FinFET devices are provided wherein the current path is minimized and mostly limited to spacer regions before the channel carriers reach the metal contacts....
2017/0221925 DISPLAY PANEL, ARRAY SUBSTRATE, AND FABRICATION METHOD THEREOF
The disclosure provides a display panel, an array substrate and a fabrication method thereof. The fabrication method of the array substrate includes forming a...
2017/0221924 Method for Manufacturing TFT, Array Substrate and Display Device
A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a...
2017/0221923 DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A display device includes: a base layer; pixel electrodes laminated on the base layer; a light emitting element layer laminated on the pixel electrodes; and a...
2017/0221922 SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes: a substrate; a stacked body; a columnar portion; and a plate portion. The substrate has a major...
2017/0221921 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
A vertical memory device includes insulating interlayer patterns, of gate electrodes, a channel, and a charge storage pattern structure. The insulating...
2017/0221920 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device according to an embodiment includes: first and second memory columnar bodies aligned in a second direction intersecting a first...
2017/0221919 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate including a cell region and a peripheral region adjacent to the cell region, a cell stack structure located in the...
2017/0221918 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURE THEREOF
A nonvolatile semiconductor storage device including a number of memory cells formed on a semiconductor substrate, each of the memory cells has a tunnel...
2017/0221917 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Deterioration in reliability is prevented regarding a semiconductor device. The deterioration is caused when an insulating film for formation of a sidewall is...
2017/0221916 Flash Memory
A cheap and high performance 1.5 transistor-type flash memory highly compatible to external of memory region is provided. The flash memory has sacrifice film...
2017/0221915 NON-VOLATILE MEMORY DEVICES INCLUDING VERTICAL NAND CHANNELS AND METHODS OF FORMING THE SAME
A non-volatile memory device can include a plurality of immediately adjacent offset vertical NAND channels that are electrically coupled to a single upper...
2017/0221914 NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME
A method for manufacturing a semiconductor device includes providing a substrate structure having an active region, a gate insulating layer, a charge storage...
2017/0221913 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor device includes providing a substrate with a memory region and a logic region, forming a recess of the substrate in the...
2017/0221912 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing the semiconductor device includes forming a first gate member on a semiconductor substrate through a gate insulating film, forming a...
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