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Patent # Description
2017/0229608 SELF-EMISSION TYPE DISPLAY AND REPAIRING METHOD THEREOF
The present invention proposes a self-emission type display and a repairing method thereof. The self-emission type display includes a carrier substrate and a...
2017/0229607 FLIP CHIP LIGHT EMITTING DIODE HAVING TRANSPARENT MATERIAL WITH SURFACE FEATURES
Flip chip LEDs include a transparent substrate or carrier having an active material attached thereto and having a number of electrodes disposed along a common...
2017/0229606 LIGHT EMITTING DIODE AND DISPLAY DEVICE INCLUDING THE SAME
A light emitting element includes a first electrode, a second electrode overlapping the first electrode, and an emission layer between the first electrode and...
2017/0229605 METHOD FOR MANUFACTURING SOLAR CELL MODULE AND APPARATUS FOR MANUFACTURING SOLAR CELL MODULE
A method for manufacturing a solar cell module comprises: a step for manufacturing a multilayer by stacking and heat-pressing solar cells, an encapsulant, and...
2017/0229604 Laser Scribing Of Thin-Film Solar Cell Panel
The present invention describes an apparatus for a first laser scribing (P1) on the front electrode of a thin film solar cell panel and a similar apparatus for...
2017/0229603 CRACK-TOLERANT PHOTOVOLTAIC CELL STRUCTURE AND FABRICATION METHOD
After forming an absorber layer containing cracks over a back contact layer, a passivation layer is formed over a top surface of the absorber layer and...
2017/0229602 WIRE SETTING APPARATUS OF TABBING APPARATUS AND WIRE SETTING METHOD USING SAME
Provided is a wire setting apparatus of a tabbing apparatus. A wire setting apparatus of a tabbing apparatus according to the present invention includes: a...
2017/0229601 WIRE TRANSFER APPARATUS OF TABBING APPARATUS
Provided is a wire transfer apparatus of a tabbing apparatus. A wire transfer apparatus of a tabbing apparatus according to the present invention includes: a...
2017/0229600 PASSIVATION STACK ON A CRYSTALLINE SILICON SOLAR CELL
A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline...
2017/0229599 PHOTODIODE, PHOTODIODE ARRAY, AND SOLID-STATE IMAGING DEVICE
A photodiode that multiplies a charge generated by photoelectric conversion in an avalanche region includes: a p- type semiconductor layer having interfaces;...
2017/0229597 INCREASING CAPTURE OF ELECTRON HOLE PAIRS IN A PHOTOVOLTAIC CELL STRUCTURE
A photovoltaic cell structure for converting light energy into electrical energy is provided herein. One of skill will appreciate having, for example, a...
2017/0229596 Decorative Composite Body Comprising a Solar Cell
There is proposed a decorative element containing (a) a transparent gemstone with a faceted surface comprising convex curved regions, (b) a ...
2017/0229595 APPARATUS FOR MAINTAINING CONCENTRATION AND ILLUMINATION SYSTEMS
A system for collecting light energy through smaller photovoltaic cells (PV cell) such that the length of the PV cell is much greater than the width. The PV...
2017/0229594 LIGHT DIFFUSION MEMBER FOR INTERCONNECTORS, INTERCONNECTOR FOR SOLAR CELLS PROVIDED WITH SAME, AND SOLAR CELL...
This invention provides a light diffusion member for an interconnector that enables the amount of light incident on the surface of a solar cell to be increased...
2017/0229593 REFRACTORY SOLAR SELECTIVE COATINGS
Selective receiver coatings provide high performance for concentrated solar power applications. The coating provides high solar absorptivity (90% or greater)...
2017/0229592 Integrated Photodetector
An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction....
2017/0229591 SYSTEMS AND METHODS FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES
According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a...
2017/0229590 POWER GENERATION BATTERY
Provided is a power generation battery capable of improving power generation efficiency. The power generation battery includes a first layer, a second layer,...
2017/0229589 TUNNELING DIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a tunneling diode, which includes a graphene-silicon quantum dot hybrid structure, having improved performance and electrical characteristics by...
2017/0229588 SELF-ALIGNED HETEROJUNCTION FIELD EFFECT TRANSISTOR
A junction field effect transistor (JFET) comprises an insulating carrier substrate, a base semiconductor substrate formed on the insulating carrier substrate...
2017/0229587 GRAPHENE TRANSISTOR AND TERNARY LOGIC DEVICE USING THE SAME
Disclosed is a graphene transistor using graphene as a channel region and a logic device using the same. A doping metal layer is provided over a graphene...
2017/0229585 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A metal element of a metal film is introduced into the oxide semiconductor film by performing heat treatment in the state where the oxide semiconductor film is...
2017/0229584 THIN-FILM TRANSISTOR
According to one embodiment, a thin-film transistor includes a polycrystalline semiconductor layer, a gate electrode opposing the polycrystalline semiconductor...
2017/0229583 ELECTRONIC DEVICE, STACKED STRUCTURE, AND MANUFACTURING METHOD OF THE SAME
A stacked structure includes: an insulating substrate; a graphene film that is formed on the insulating substrate; and a protective film that is formed on the...
2017/0229582 THIN FILM TRANSISTOR AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR
According to one embodiment, a manufacturing method of thin film transistor includes forming an oxide semiconductor layer on a first insulating film, forming a...
2017/0229581 FIN FET AND METHOD OF FABRICATING SAME
A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by...
2017/0229580 FIN FIELD EFFECT TRANSISTOR AND FABRICATING METHOD THEREOF
A FinFET including a substrate, a plurality of insulators and a gate stack is provided. The substrate includes a plurality of trenches and at least one...
2017/0229579 III-V FINS BY ASPECT RATIO TRAPPING AND SELF-ALIGNED ETCH TO REMOVE ROUGH EPITAXY SURFACE
A semiconductor device that includes a fin structure of a type III-V semiconductor material that is substantially free of defects, and has sidewalls that are...
2017/0229578 DEVICE WITH DIFFUSION BLOCKING LAYER IN SOURCE/DRAIN REGION
A method includes forming a gate electrode structure above a channel region defined in a semiconductor material. The semiconductor material is recessed in a...
2017/0229577 SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a substrate, a stacked body, a pillar structure, at least one charge storage film, and a...
2017/0229576 IONIC BARRISTOR
A Schottky barrier device is provided herein that includes a TMD layer on a substrate, a graphene layer on the TMD layer, an electrolyte layer on the TMD...
2017/0229575 SEMICONDUCTOR STRUCTURE AND ASSOCIATED FABRICATING METHOD
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate of a first conductivity; a first region of the first conductivity...
2017/0229574 SEMICONDUCTOR DEVICE
A semiconductor apparatus includes: a gate electrode in a trench and facing a p type base region with a gate insulating film interposed therebetween on a...
2017/0229573 SEMICONDUCTOR DEVICE
A MOS gate structure is provided on a p-type base layer side of a silicon carbide semiconductor base formed by sequentially forming on a front surface of an...
2017/0229572 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of...
2017/0229571 Thin Film Transistor and Manufacturing Method Thereof, Array Substrate and Manufacturing Method Thereof, and...
Provided are a thin film transistor and manufacturing method thereof, array substrate and manufacturing method thereof, and display device. The thin film...
2017/0229569 III-NITRIDE BASED N POLAR VERTICAL TUNNEL TRANSISTOR
A semiconductor structure, device, or N-polar Ill-nitride vertical field effect transistor. The structure, device, or transistor includes a current blocking...
2017/0229568 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V...
2017/0229567 ENHANCED NORMALLY-OFF HIGH ELECTRON MOBILITY HETEROJUNCTION TRANSISTOR
A high electron mobility field-effect transistor of normally-off type, including a first layer of GaN with P-type doping; a second layer of GaN with N-type...
2017/0229566 SEMICONDUCTOR DEVICE, POWER-SUPPLY DEVICE, AND AMPLIFIER
A semiconductor device includes a substrate, a buffer layer including a nitride semiconductor and formed over the substrate, a composition gradient layer...
2017/0229565 MULTI-GATE HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF FABRICATION
A multi-gate high electron mobility transistor (HEMT) and its methods of formation are disclosed. The multi-gate HEMT includes a substrate and an adhesion...
2017/0229564 BIPOLAR TRANSISTOR DEVICE AND METHOD OF FABRICATION
The disclosure relates to bipolar transistor devices and a method of fabricating the same. The device comprises a field plate, in an isolation region adjacent...
2017/0229563 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
When a transistor having bottom gate bottom contact structure is manufactured, for example, a conductive layer constituting a source and a drain has a...
2017/0229562 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
When forming a MISFET by replacing a dummy gate electrode with a metal gate electrode in a gate last process, formation caused by polishing of an interlayer...
2017/0229561 FINFET DEVICE AND METHOD FOR FABRICATING SAME
Methods are disclosed herein for fabricating integrated circuit devices, such as fin-like field-effect transistors (FinFETs). An exemplary method includes...
2017/0229560 SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF
The present disclosure provides semiconductor structures and fabrication methods thereof. An exemplary fabrication method includes providing a semiconductor...
2017/0229559 FINFET DEVICES HAVING A MATERIAL FORMED ON REDUCED SOURCE/DRAIN REGION
A semiconductor device includes a fin structure of a first semiconductor material on a substrate. The fin structure has a source region, a drain region, and a...
2017/0229558 VERTICAL TRANSISTOR DEVICE
According to an embodiment of the present invention, a method for forming a semiconductor device includes pattering a first fin in a semiconductor substrate,...
2017/0229557 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device includes carrying out a first heat treatment accompanied by nitration on a first insulating film and a...
2017/0229556 VERTICAL TRANSISTOR DEVICE
According to an embodiment of the present invention, a method for forming a semiconductor device includes pattering a first fin in a semiconductor substrate,...
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