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Patent # Description
2017/0229554 HIGH-K DIELECTRIC MATERIALS UTILIZED IN DISPLAY DEVICES
Embodiments of the disclosure generally provide methods of forming a capacitor layer or a gate insulating layer with high dielectric constant as well as film...
2017/0229553 NANOWIRE SEMICONDUCTOR DEVICE INCLUDING LATERAL-ETCH BARRIER REGION
A semiconductor device includes a semiconductor-on-insulator wafer having a buried layer. The buried layer includes therein opposing etch barrier regions and a...
2017/0229552 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device having electrodes of three or more levels, includes: a semiconductor substrate; an epitaxial layer formed on the semiconductor...
2017/0229551 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
To provide a highly reliable semiconductor device having both an improved breakdown voltage and a reduced withstand voltage leakage current. An intermediate...
2017/0229550 ELECTRON GAS CONFINEMENT HETEROJUNCTION TRANSISTOR
A high electron mobility heterojunction transistor, including a first GaN layer; a second, p-doped GaN layer on top of the first layer, including magnesium as...
2017/0229549 SEMICONDUCTOR STRUCTURE COMPRISING AN ACTIVE SEMICONDUCTOR LAYER OF THE III-V TYPE ON A BUFFER LAYER STACK AND...
A semiconductor structure includes a buffer layer stack comprising a plurality of III-V material layers, and the buffer layer stack includes at least one...
2017/0229548 Semiconductor Component with a Multi-Layered Nucleation Body
There are disclosed herein various implementations of a semiconductor component with a multi-layered nucleation body and method for its fabrication. The...
2017/0229547 Silicon Carbide EPI Wafer and Method for Manufacturing Same
An embodiment provides: a method for manufacturing a silicon carbide epi wafer, the method comprising the steps of preparing a wafer, applying a reaction gas...
2017/0229546 METHOD OF FORMING GRAPHENE NANOPATTERN, GRAPHENE-CONTAINING DEVICE, AND METHOD OF MANUFACTURING THE...
Methods of forming a graphene nanopattern, graphene-containing devices, and methods of manufacturing the graphene-containing devices are provided. A method of...
2017/0229545 TENSILE STRAINED NFET AND COMPRESSIVELY STRAINED PFET FORMED ON STRAIN RELAXED BUFFER
A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate....
2017/0229544 LOCALIZED AND SELF-ALIGNED PUNCH THROUGH STOPPER DOPING FOR FINFET
A method for doping punch through stoppers (PTSs) includes forming fins in a monocrystalline substrate, forming a dielectric layer at a base portion between...
2017/0229543 APPARATUS AND METHODS TO CREATE AN INDIUM GALLIUM ARSENIDE ACTIVE CHANNEL HAVING INDIUM RICH SURFACES
Transistor devices having indium gallium arsenide active channels, and processes for the fabrication of the same, that enables improved carrier mobility when...
2017/0229542 TENSILE STRAINED NFET AND COMPRESSIVELY STRAINED PFET FORMED ON STRAIN RELAXED BUFFER
A tensile strained silicon layer and a compressively strained silicon germanium layer are formed on a strain relaxed silicon germanium buffer layer substrate....
2017/0229541 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A silicon carbide semiconductor device includes: n type regions formed on a surface of the n.sup.- type epitaxial layer; p type body regions formed at...
2017/0229540 NON-VOLATILE MEMORY DEVICE HAVING REDUCED DRAIN AND READ DISTURBANCES
A source-drain structure is disclosed. The source-drain structure includes a substrate containing a drain region and a source region. The drain region includes...
2017/0229539 Method for Forming a Semiconductor Device and a Semiconductor Device
A method for forming a semiconductor device includes incorporating first dopant atoms of a first conductivity type into a semiconductor substrate to form a...
2017/0229538 STACKED NANOWIRE DEVICES
A semiconductor device comprises first stack of nanowires arranged on a substrate comprises a first nanowire and a second nanowire, the second nanowire is...
2017/0229537 MECHANICAL STRESS-DECOUPLING IN SEMICONDUCTOR DEVICE
According to a method in semiconductor device fabrication, a first trench and a second trench are concurrently etched in a semi-finished semiconductor device....
2017/0229536 POWER DEVICE ON BULK SUBSTRATE
A metal-oxide-semiconductor field-effect transistor (MOSFET) power device includes an active region formed on a bulk semiconductor substrate, the active region...
2017/0229535 SEMICONDUCTOR DEVICE
A source region of a MOSFET includes a source contact region connected to a source electrode, a source extension region adjacent to a channel region of a well...
2017/0229534 METHOD OF MANUFACTURING A CAPACITOR
A method of forming a device includes forming a through via extending into a substrate. The method further includes forming a first insulating layer over the...
2017/0229533 HIGH RESISTIVITY IRON-BASED, THERMALLY STABLE MAGNETIC MATERIAL FOR ON-CHIP INTEGRATED INDUCTORS
An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated...
2017/0229531 Capacitor-driven electroluminescent display and method of manufacturing the same
The subject invention provides a capacitor-drive electroluminescent display, which includes a display substrate, row and column electrodes that are deposited...
2017/0229530 LIGHT EMITTING DEVICE
An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect...
2017/0229529 TRANSPARENT DISPLAY DEVICES AND METHODS OF MANUFACTURING TRANSPARENT DISPLAY DEVICES
A transparent display substrate, a transparent display device, and a method of manufacturing a transparent display device, the substrate including a base...
2017/0229528 ELECTRO-OPTIC DEVICE AND ELECTRONIC APPARATUS
An electro-optic device includes an element substrate. The element substrate has a display section and a peripheral circuit section. The display section has a...
2017/0229527 DISPLAY DEVICE
A display device including: a substrate including a first region and a second region; a signal line on the substrate and including a first layer and a second...
2017/0229526 DISPLAY PANEL, FABRICATING METHOD THEREOF, AND DISPLAY APPARATUS
In accordance with various embodiments of the disclosed subject matter, a display panel, a fabricating method thereof, and a related display apparatus are...
2017/0229525 ORGANIC EL DEVICE
According to one embodiment, an organic EL device includes an insulating substrate including a first main surface and a second main surface, a switching...
2017/0229524 SELF-LIGHT EMITTING DISPLAY UNIT AND ELECTRONIC DEVICE
A self-light emitting display unit capable of improving manufacturing yield is provided. Sizes of color pixel circuits corresponding to pixels for R, G, and B...
2017/0229523 IMAGE ACQUISITION CONTROL METHODS AND APPARATUSES, AND IMAGE ACQUISITION DEVICES
Various image acquisition control methods and apparatuses, and various image acquisition devices are disclosed. One of the image acquisition control methods...
2017/0229522 ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME
An organic light emitting display panel and a method for manufacturing the same are provided. The organic light emitting display panel includes: an organic...
2017/0229521 ORGANIC EL DISPLAY DEVICE
An organic electro-luminescence display device includes: a first substrate having transmissive properties; a touch electrode for a touch sensor, the touch...
2017/0229520 HIGH RESOLUTION LOW POWER CONSUMPTION OLED DISPLAY WITH EXTENDED LIFETIME
OLED-based devices that include at least two colors of emissive regions are provided, in which one region is optically coupled to a microcavity and the other...
2017/0229518 A Photovoltaic Cell and a Method of Forming a Photovoltaic Cell
The present disclosure provides a photovoltaic device and a method for forming the photovoltaic device. The photovoltaic device comprises a first solar cell...
2017/0229517 Array Substrate and Method of Fabricating the Same
The present invention proposes an array substrate and a method for fabricating the same. According to the array substrate and the method of fabricating the...
2017/0229516 METHODS OF FORMING METAL ON INHOMOGENEOUS SURFACES AND STRUCTURES INCORPORATING METAL ON INHOMOGENEOUS SURFACES
The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface...
2017/0229515 NON-VOLATILE MEMORY DEVICE AND STRUCTURE THEREOF
In the present disclosure, a non-volatile memory cell comprises a data storage unit, a selection unit and a switching unit. The data storage unit is configured...
2017/0229514 MEMORY DEVICE
According to one embodiment, a memory device includes a first interconnect group, a second interconnect group, and a memory cell. In the first interconnect...
2017/0229513 SUPERLATTICE MEMORY AND CROSSPOINT MEMORY DEVICE
According to one embodiment, a memory includes a resistance change layer includes a first chalcogenide layer, and a second chalcogenide layer having a...
2017/0229512 LIGHT EMITTING DEVICE AND BACKLIGHT INCLUDING THE LIGHT EMITTING DEVICE
A light emitting device includes at least three light emitting elements arranged side by side, and one or more light transmissive members each containing a...
2017/0229511 AMORPHOUS LEAD OXIDE BASED ENERGY DETECTION DEVICES AND METHODS OF MANUFACTURE THEREOF
PbO-based photoconductive X-ray imaging devices are disclosed in which the PbO photoconductive layer exhibits an amorphous crystal structure. According to...
2017/0229510 SOLID-STATE IMAGE SENSING DEVICE
A solid-state image sensing device capable of suppressing a dark current and transfer failure during a global shutter operation is provided. The solid-state...
2017/0229509 PIXEL AND CIRCUIT DESIGN FOR IMAGE SENSORS WITH HOLE-BASED PHOTODIODES
In order to reduce dark current and pixel readout noise in an image sensor, pixels may include a p-type hole-based pinned photodiode. Charge stored in the...
2017/0229508 SOLID-STATE IMAGE PICKUP DEVICE
A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is...
2017/0229507 MONOLITHIC VISIBLE-INFRARED FOCAL PLANE ARRAY ON SILICON
A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting...
2017/0229506 SOLID-STATE IMAGING APPARATUS
A solid-state imaging apparatus includes: a solid-state imaging device photoelectrically converting light taken by a lens; and a light shielding member...
2017/0229503 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
The present technology relates to a solid-state imaging element and an electronic device capable of improving image quality of the solid-state imaging element....
2017/0229502 ACTIVE PIXEL RADIATION DETECTOR ARRAY AND USE THEREOF
Fabrication and use of an X-ray detector scan interface having separate enable and reset lines for each line (e.g., row) of pixels is described. In certain...
2017/0229501 SOLID-STATE IMAGING DEVICE
A solid-state imaging device includes a plurality of photoelectric converting units and a plurality of charge-accumulating units each accumulating a charge...
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