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Patent # Description
2017/0236981 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A light emitting device of side-view type includes a substrate, a light emitting element, an insulating member and a light reflecting or sealing member. The...
2017/0236980 Optoelectronic Semiconductor Chip and Method for Producing the Same
An optoelectronic semiconductor chip and a method for producing the same are disclosed. In an embodiment an optoelectronic semiconductor chip includes a...
2017/0236979 LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING PACKAGE COMPRISING SAME
An embodiment provides a light emitting device comprising: a substrate; a plurality of light emitting cells disposed on the substrate to be spaced apart from...
2017/0236978 LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprises: a metal connecting structure; a...
2017/0236977 LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREFOR
A light-emitting diode and a manufacturing method therefor are disclosed. The light-emitting diode comprises: a first conductive semiconductor layer; at least...
2017/0236976 SOLID STATE LIGHTING DEVICES WITH IMPROVED CONTACTS AND ASSOCIATED METHODS OF MANUFACTURING
Solid state lighting ("SSL") devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device...
2017/0236975 III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof
A core-shell nanowire device includes an eave region having a structural discontinuity from the p-plane in the upper tip portion of the shell to the m-plane in...
2017/0236974 LIGHT EMITTING DEVICE WITH TRANSPARENT CONDUCTIVE GROUP-III NITRIDE LAYER
A group III-nitride semiconductor device comprises a light emitting semiconductor structure comprising a p-type layer and an n-type layer operable as a light...
2017/0236973 PACKAGING METHOD FOR ULTRAVIOLET LIGHT EMITTING DIODE
The invention provides a packaging method for ultraviolet light emitting diode, comprising: (S1) providing a carrier, connected to an electrode; (S2) fixing an...
2017/0236972 SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a solar cell is disclosed. The method includes forming a control passivation layer on a back surface of a semiconductor substrate...
2017/0236971 METHOD FOR FORMING THIN FILM CHALCOGENIDE LAYERS
The disclosed technology generally relates to chalcogenide thin films, and more particularly to ternary and quaternary chalcogenide thin films having a wide...
2017/0236970 METHOD FOR PRODUCING DOPING REGIONS IN A SEMICONDUCTOR LAYER OF A SEMICONDUCTOR COMPONENT
The invention relates to a method for producing doping regions in a semiconductor layer of a semiconductor component, wherein the method includes the following...
2017/0236969 LASER IRRADIATION ALUMINUM DOPING FOR MONOCRYSTALLINE SILICON SUBSTRATES
Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and...
2017/0236968 PHOTOELECTRONIC DEVICE INCLUDING CHARGE BARRIER
A photoelectronic device includes a semiconductor substrate doped with a first type impurity, a second semiconductor layer doped with a second type impurity of...
2017/0236967 CONVERSION OF HIGH-ENERGY PHOTONS INTO ELECTRICITY
Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to...
2017/0236966 CONTACTS FOR SOLAR CELLS
A method of fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a...
2017/0236965 METHOD FOR PRODUCING A REAR-SIDE CONTACT SYSTEM FOR A SILICON THIN-LAYER SOLAR CELL
A method for producing a rear-side contact system for a silicon thin-film solar cell having pn junction formed from a silicon absorber layer and an emitter...
2017/0236964 SOLAR CELL MODULE
A solar cell module comprises a solar cell element, first and second connection tabs, and first and second solder portions. The solar cell element includes a...
2017/0236963 PHOTOVOLTAIC MODULE COMPRISING A PLURALITY OF BIFACIAL CELLS AND METHOD FOR PRODUCING SUCH A MODULE
The invention concerns a method for producing a photovoltaic module, comprising:.cndot.--providing a plurality of bifacial photovoltaic cells each having a...
2017/0236962 SOLAR CELL ELEMENT AND CELL ARRANGEMENT MADE FROM THE ELEMENTS
Solar cell element with a carrier (14), a thin film layer structure on a surface of the carrier, the thin film layer structure comprises a transparent first...
2017/0236961 FLAT TOP LASER BEAM PROCESSING FOR MAKING A SOLAR CELL SUBSTRATE
Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and...
2017/0236960 RELIABLE INTERCONNECTION OF SOLAR CELLS
The present disclosure provides interconnect elements and methods of using interconnect elements. In one embodiment, the interconnect element includes: a first...
2017/0236959 METHOD OF INCREASING THE THICKNESS OF COLLOIDAL NANOSHEETS AND MATERIALS CONSISTING OF SAID NANOSHEETS
A process of growth in the thickness of at least one facet of a colloidal inorganic sheet. By sheet is meant a structure having at least one dimension, the...
2017/0236958 PHOTOELECTRIC CONVERSION DEVICE AND PHOTOELECTRIC CONVERSION MODULE
The photoelectric conversion device includes a quantum dot accumulation zone, a base layer having current collecting properties which is disposed on at least...
2017/0236957 APPARATUS AND METHOD OF FORMING AN APPARATUS COMPRISING A TWO DIMENSIONAL MATERIAL
A method and apparatus, the method comprising: forming first electrode portions on a substrate; providing a sheet of two dimensional material overlaying at...
2017/0236956 Photovoltaic Devices and Method of Making
A photovoltaic device is presented. The photovoltaic device includes a buffer layer disposed on a transparent conductive oxide layer; a window layer disposed...
2017/0236955 Method for Making Ferroelectric Material Thin Films
A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves...
2017/0236954 HIGH EFFICIENCY SOLAR CELL STRUCTURES AND MANUFACTURING METHODS
Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact...
2017/0236953 HIGH EFFICIENCY PHOTOVOLTAIC CELLS WITH SELF CONCENTRATING EFFECT
This invention relates to a novel structure of photovoltaic devices (e.g. photovoltaic cells also called as solar cells) are provided. The cells are based on...
2017/0236952 HIGH-EFFICIENCY SOLAR CELL STRUCTURES AND METHODS OF MANUFACTURE
Solar cells of varying composition are disclosed, generally including a central substrate, conductive layer(s), antireflection layers(s), passivation layer(s)...
2017/0236951 STRUCTURES FOR NITRIDE VERTICAL TRANSISTORS
A vertical semiconductor transistor and a method of forming the same. A vertical semiconductor transistor has at least one semiconductor region, a source, and...
2017/0236950 DISPLAY DEVICE
A display device is disclosed, which includes: a substrate; a first conductive layer disposed on the substrate and including a gate with a gate edge parallel...
2017/0236949 SEMICONDUCTOR DEVICE
A semiconductor device with improved electrical characteristics is provided. A semiconductor device with improved field effect mobility is provided. A...
2017/0236948 THIN FILM TRANSISTOR, MANUFACTURING PROCESS FOR THIN FILM TRANSISTOR, AND LASER ANNEALING APPARATUS
The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are...
2017/0236947 Dual-gate Thin Film Transistor and Manufacturing Method Thereof and Array Substrate
The present disclosure proposes a dual-gate thin film transistor and manufacturing method thereof and an array substrate. A manufacturing method includes:...
2017/0236946 Method and Apparatus Improving Gate Oxide Reliability by Controlling Accumulated Charge
A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect...
2017/0236945 VERTICAL JUNCTIONLESS TRANSISTOR DEVICES
A semiconductor device includes a silicon substrate, a silicon germanium (SiGe) layer including a lower portion extending over the silicon substrate and a fin...
2017/0236944 SUPPORT FOR LONG CHANNEL LENGTH NANOWIRE TRANSISTORS
A nanowire device includes a first component formed on a substrate and a second component disposed apart from the first component on the substrate. A nanowire...
2017/0236943 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
To offer a semiconductor device including a thin film transistor having excellent characteristics and high reliability and a method for manufacturing the...
2017/0236942 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device is manufactured using a transistor in which an oxide semiconductor is included in a channel region and variation in electric...
2017/0236941 SEMICONDUCTOR DEVICE
To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor...
2017/0236940 ELECTRODE LAYER, THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND DISPLAY APPARATUS HAVING THE SAME, AND FABRICATING...
The present application discloses a thin film transistor including an active layer, and a source electrode and a drain electrode on the active layer; each of...
2017/0236939 Structure and Formation Method of Semiconductor Device Structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
2017/0236938 REPLACEMENT METAL GATE STRUCTURES
Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method...
2017/0236937 STRAINED STACKED NANOWIRE FIELD-EFFECT TRANSISTORS (FETs)
A method for manufacturing a semiconductor device comprises epitaxially growing a plurality of silicon layers and compressively strained silicon germanium...
2017/0236936 WIDE BAND GAP TRANSISTOR ON NON-NATIVE SEMICONDUCTOR SUBSTRATES AND METHODS OF MANUFACTURE THEREOF
Techniques are disclosed for forming a GaN transistor on a semiconductor substrate. An insulating layer forms on top of a semiconductor substrate. A trench,...
2017/0236935 SEMICONDUCTOR DEVICE
A semiconductor device capable of increasing a value of current that flows through the whole chip until a p-n diode in a unit cell close to a termination...
2017/0236934 FLOATING-SHIELD TRIPLE-GATE MOSFET
Apparatus and associate methods relate to a high-voltage MOSFET bounded by two trenches, each having dielectric sidewalls and a dielectric bottom isolating a...
2017/0236933 FIN FIELD-EFFECT TRANSISTOR (FinFET) WITH REDUCED PARASITIC CAPACITANCE
A semiconductor device includes a substrate, a plurality of fins on the substrate, wherein the plurality of fins each include a fin channel region, first...
2017/0236932 GATE ALL-AROUND FINFET DEVICE AND A METHOD OF MANUFACTURING SAME
A method for manufacturing a fin field-effect transistor (FinFET) device, comprises patterning a first layer on a substrate to form at least one fin,...
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