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Patent # Description
2017/0236931 SEMICONDUCTOR DEVICE COMPRISING A TEMPERATURE SENSOR, TEMPERATURE SENSOR AND METHOD OF MANUFACTURING A...
A semiconductor device includes a transistor in a semiconductor substrate having a first main surface. The transistor includes a source region, a source...
2017/0236930 VERTICAL DOUBLE-DIFFUSED METAL-OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREFOR
The present invention provides a vertical double-diffused metal-oxide semiconductor field-effect transistor and a manufacturing method. The manufacturing...
2017/0236929 SEMICONDUCTOR DEVICE WITH SELECTIVELY ETCHED SURFACE PASSIVATION
A semiconductor device includes a semiconductor substrate configured to include a channel, a gate supported by the semiconductor substrate to control current...
2017/0236928 LOW SHEET RESISTANCE GaN CHANNEL ON Si SUBSTRATE USING InAlN AND AlGaN BI-LAYER CAPPING STACK
Transistors or transistor layers include an InAlN and AlGaN bi-layer capping stack on a 2DEG GaN channel, such as for GaN MOS structures on Si substrates. The...
2017/0236927 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device, including a first groove, a second groove and a first impurity region provided on a semiconductor substrate, a second impurity region...
2017/0236926 SEMICONDUCTOR DEVICE
Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of gate trench sections formed in the semiconductor substrate; and a...
2017/0236925 SEMICONDUCTOR DEVICE WITH MULTIPLE HBTS HAVING DIFFERENT EMITTER BALLAST RESISTANCES
The present disclosure relates to a semiconductor device with multiple heterojunction bipolar transistors (HBTs) that have different emitter ballast...
2017/0236924 SUPERLATTICE LATERAL BIPOLAR JUNCTION TRANSISTOR
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of...
2017/0236923 BIPOLAR TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region...
2017/0236922 MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE
The semiconductor device is manufactured through the following steps: after first heat treatment is performed on an oxide semiconductor film, the oxide...
2017/0236921 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device includes a fin structure which vertically protrudes from a substrate and extends in a first direction parallel to a top surface of the...
2017/0236920 METHOD FOR PRODUCING A PILLAR-SHAPED SEMICONDUCTOR DEVICE
A method for producing a semiconductor device includes forming a semiconductor-pillar on a substrate and forming a laminated-structure of at least two...
2017/0236919 ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A method for fabricating an electronic device is provided to include: forming a hard mask pattern over a substrate to expose a gate formation region; forming a...
2017/0236918 REPLACEMENT METAL GATE STRUCTURES
Replacement metal gate structures with improved chamfered workfunction metal and self-aligned contact and methods of manufacture are provided. The method...
2017/0236917 FINFET HAVING NOTCHED FINS AND METHOD OF FORMING SAME
One aspect of the disclosure provides for a method of forming a replacement gate structure. The method may include: removing a dummy gate from over a set of...
2017/0236916 SEMICONDUCTOR DEVICE INCLUDING SENSE INSULATED-GATE BIPOLAR TRANSISTOR
A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each...
2017/0236915 SYSTEMS AND METHODS FOR IN-SITU DOPED SEMICONDUCTOR GATE ELECTRODES FOR WIDE BANDGAP SEMICONDUCTOR POWER DEVICES
In an embodiment, a wide bandgap semiconductor power device, includes a wide bandgap semiconductor substrate layer; an epitaxial semiconductor layer disposed...
2017/0236914 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure, an interlayer insulating film formed...
2017/0236913 Method of Processing a Semiconductor Device
A method of processing a semiconductor device includes: creating first and second recesses in a surface of a semiconductor body; creating an insulation layer...
2017/0236912 Spatial terahertz wave phase modulator based on high electron mobility transistor
A spatial terahertz wave phase modulator based on the high electron mobility transistor is provided. The phase modulator combines the quick-response high...
2017/0236911 SEMICONDUCTOR DEVICE WITH SILICIDE
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a...
2017/0236910 Methods of Manufacturing a Power MOSFET
A method of manufacturing a power metal oxide semiconductor field effect transistor includes: forming a field electrode in a field plate trench in a main...
2017/0236909 HIGH ELECTRON MOBILITY TRANSISTOR AND FABRICATION METHOD THEREOF
A high electron mobility transistor includes a substrate including a first surface and a second surface facing each other and having a via hole passing through...
2017/0236908 SEMICONDUCTOR DEVICE
Provided is a semiconductor device having an RC-IGBT structure, the semiconductor device comprising an FWD (Free Wheel Diode) region and an IGBT (Insulated...
2017/0236907 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
A semiconductor device which can reduce power consumption and a method for manufacturing the same are provided. A semiconductor device comprises an Si...
2017/0236906 SEMICONDUCTOR WAFER AND METHOD OF INSPECTING SEMICONDUCTOR WAFER
Provided is a semiconductor wafer in which a nitride crystal layer on a silicon wafer includes a reaction suppressing layer to suppress reaction between a...
2017/0236905 METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER
Provided is a method for manufacturing a thin SiC wafer by which a SiC wafer is thinned using a method without generating crack or the like, the method in...
2017/0236904 METHOD OF MAKING BIPOLAR TRANSISTOR
A method of making a bipolar transistor includes patterning a first photoresist over a collector region of the bipolar transistor, the first photoresist...
2017/0236903 PROCESS METHOD AND STRUCTURE FOR HIGH VOLTAGE MOSFETS
This invention discloses a semiconductor power device disposed in a semiconductor substrate. The semiconductor power device comprises a plurality of trenches...
2017/0236902 GROWING GROUPS III-V LATERAL NANOWIRE CHANNELS
In one example, a method for fabricating a semiconductor device includes forming a mandrel comprising silicon. Sidewalls of the silicon are orientated normal...
2017/0236901 Junctionless Transistor Based on Vertically Integrated Gate-All-Round Multiple Nanowire Channels and Method of...
Disclosed is a method of manufacturing a junctionless transistor based on vertically integrated gate-all-around multiple nanowire channels including forming...
2017/0236900 NANOWIRE WITH SACRIFICIAL TOP WIRE
Field effect transistors and methods of forming the same include forming a stack of nanowires of alternating layers of channel material and sacrificial...
2017/0236899 HIGH VOLTAGE DEVICE AND METHOD OF FABRICATING THE SAME
A high voltage device includes a substrate, a first LDMOS transistor and a second LDMOS transistor disposed on the substrate. The first LDMOS transistor...
2017/0236898 SEMICONDUCTOR STRUCTURE WITH INTEGRATED PASSIVE STRUCTURES
A metal-oxide-semiconductor field-effect transistor (MOSFET) with integrated passive structures and methods of manufacturing the same is disclosed. The method...
2017/0236897 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device having a high and stable operating voltage and a method of manufacturing the same, the semiconductor device including: a substrate...
2017/0236896 SELF-ALIGNED ISOLATION DIELECTRIC STRUCTURES FOR A THREE-DIMENSIONAL MEMORY DEVICE
A method of dividing drain select gate electrodes in a three-dimensional vertical memory device is provided. An alternating stack of insulating layers and...
2017/0236895 SEMICONDUCTOR DEVICE WITH THRESHOLDMOSFET FOR HIGH VOLTAGE TERMINATION
This invention discloses a semiconductor power device disposed in a semiconductor substrate comprising a lightly doped layer formed on a heavily doped layer...
2017/0236894 Semiconductor Devices
Provided is a semiconductor device. The semiconductor device includes a capacitor structure including a plurality of lower electrodes, a dielectric layer that...
2017/0236893 ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE
Provided is an organic electroluminescence display device. The organic electroluminescence display device includes a bank that is provided so as to surround a...
2017/0236892 DISPLAY SUBSTRATES, METHODS OF MANUFACTURING THE SAME AND DISPLAY DEVICES INCLUDING THE SAME
Display substrates, methods of manufacturing the same and display devices including the same disclosed. In one aspect, a display substrate includes a base...
2017/0236891 ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
Subpixels of R, G, and B corresponding to a scanning line extended in a row direction and a data transfer line extended in a column direction are provided. A...
2017/0236889 OLED Display Panel and Manufacturing Method Thereof
The present disclosure provides an OLED display panel and a manufacturing method thereof. The OLED display panel includes a substrate and a bank layer and...
2017/0236888 Organic Light Emitting Diode Display Device and Method for Manufacturing the Same
An organic light emitting diode display device is disclosed which includes: scan, data and power lines crossing one another and arranged to define a pixel...
2017/0236887 METHOD FOR MANUFACTURING ORGANIC EL DISPLAY PANEL, AND ORGANIC EL DISPLAY PANEL
A method for manufacturing an organic EL display panel that includes: forming, on a substrate, a first pattern that includes gate electrodes, scan lines, and a...
2017/0236886 DISPLAY DEVICE AND DISPLAY DEVICE MANUFACTURING METHOD
The object is providing an organic light emitting display device achieving a narrow bezel. A display device 10 has a first substrate 11, a second substrate 12,...
2017/0236885 ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
Subpixels of R, G, and B corresponding to a scanning line as a first conductive layer extended in a row direction and a data transfer line as a second...
2017/0236884 FLAT PANEL AND FLAT PANEL DISPLAY
The present invention discloses a flat panel and a flat panel display. The flat panel comprises a plurality of pixels, and in each pixel: the first ion...
2017/0236883 High Resolution Organic Light-Emitting Diode Devices, Displays, and Related Methods
A method of manufacturing an organic-light emitting diode (OLED) display can include providing on a substrate a first electrode associated with a first...
2017/0236882 DISPLAY DEVICE
A display device comprising a display region on which a plurality of subpixels are arranged. The plurality of subpixels respectively comprise a transistor, a...
2017/0236881 Display Substrate, Display Device Thereof, and Manufacturing Method Therefor
A display substrate, an Organic Light Emitting Diode (OLED) display device and a manufacturing method for the display substrate. The display substrate includes...
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