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Patent # Description
2017/0236728 SUBSTRATE PROCESSING APPARATUS AND GAP WASHING METHOD
A substrate processing apparatus includes a washing liquid supply unit which supplies a washing liquid to a washing liquid discharge port which is open in the...
2017/0236727 SUBSTRATE HOLDING MODULE, SUBSTRATE PROCESSING APPARATUS, AND SUBSTRATE PROCESSING METHOD
According to the present disclosure, there is provided a substrate holding module that is capable of accommodating a substrate transferred by a transfer robot....
2017/0236726 ETCHING APPARATUS AND METHOD, AND FLEXIBLE FILM ETCHED BY THE ETCHING METHOD
Disclosed herein are an etching apparatus and method that are capable of performing an etching process in the state where a flexible film is wound around a...
2017/0236725 METHOD OF MANUFACTURING PACKAGE SUBSTRATE AND SEMICONDUCTOR PACKAGE
A package substrate and a semiconductor package are provided. The package substrate includes an insulating layer having opposing first and second surfaces; a...
2017/0236724 METHODS FOR MAKING MULTI-DIE PACKAGE WITH BRIDGE LAYER
A method is provided. The method includes attaching a bridge layer to a first substrate. The method also includes forming a first connector, the first...
2017/0236723 SEMICONDUCTOR DEVICE
To suppress a change in electrical characteristics and to improve reliability in a semiconductor device using a transistor including an oxide semiconductor....
2017/0236722 FIN FORMATION FOR SEMICONDUCTOR DEVICE
A method of fabricating a semiconductor structure includes forming a plurality of semiconductor fins disposed on a semiconductor substrate, wherein at least...
2017/0236721 RAPID HEATING PROCESS IN THE PRODUCTION OF SEMICONDUCTOR COMPONENTS
A method for monitoring a rapid heating process to which a semiconductor wafer is subjected includes performing the heating process for a region of the...
2017/0236720 PATTERN FORMING METHOD
Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer;...
2017/0236719 METHOD AND APPARATUS FOR MULTI-FILM DEPOSITION AND ETCHING IN A BATCH PROCESSING SYSTEM
Embodiments of the invention describe a method and apparatus for multi-film deposition and etching in a batch processing system. According to one embodiment,...
2017/0236718 METHOD OF POLISHING GROUP III-V MATERIALS
Disclosed is a method of chemically-mechanically polishing a substrate. The method comprises, consists of, or consists essentially of (a) contacting a...
2017/0236717 UNIFORM DIELECTRIC RECESS DEPTH DURING FIN REVEAL
A method for providing a uniform recess depth between different fin gap sizes includes depositing a dielectric material between fins on a substrate. Etch lag...
2017/0236716 DOPED PROTECTION LAYER FOR CONTACT FORMATION
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate including a first doped region and a second doped region and a...
2017/0236715 ANISOTROPIC HIGH RESISTANCE IONIC CURRENT SOURCE (AHRICS)
An electroplating apparatus that promotes uniform electroplating on the substrates having thin seed layers includes a convex anisotropic high resistance ionic...
2017/0236714 Method for Removing Crystal Originated Particles from a Crystalline Silicon Body Using an Etch Process
A method for removing crystal originated particles from a crystalline silicon body having opposite first and second surfaces includes: increasing a surface...
2017/0236713 DIAMOND SEMICONDUCTOR SYSTEM AND METHOD
Disclosed herein is a new and improved system and method for fabricating monolithically integrated diamond semiconductor. The method may include the steps of...
2017/0236712 Method of Forming an Integrated Circuit
A method of forming an integrated circuit includes forming a patterned mask layer on a material layer, wherein the patterned mask layer has a plurality of...
2017/0236711 SILICON-BASED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A silicon-based substrate on which a nitride compound semiconductor layer is formed on a front surface thereof, including a first portion provided on the front...
2017/0236710 MACHINE AND PROCESS FOR CONTINUOUS, SEQUENTIAL, DEPOSITION OF SEMICONDUCTOR SOLAR ABSORBERS HAVING VARIABLE...
A system for manufacture of I-III-VI-absorber photovoltaic cells involves sequential deposition of films comprising one or more of silver and copper, with one...
2017/0236709 METHOD OF FORMING SEMICONDUCTOR STRUCTURE HAVING SETS OF III-V COMPOUND LAYERS
A method of forming a semiconductor structure includes depositing a first III-V layer over a substrate. The method includes depositing a first III-V compound...
2017/0236708 SUPERLATTICE LATERAL BIPOLAR JUNCTION TRANSISTOR
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of...
2017/0236707 PHOTOMASK AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
A photomask includes a reticle substrate, a main pattern disposed on the reticle substrate and defining a photoresist pattern realized on a semiconductor...
2017/0236706 ORTHOGONAL PATTERNING METHOD
The present invention relates to a method for forming a layer, to be patterned, of an element by using a fluorinated material, which has orthogonality, and a...
2017/0236705 Low Temperature Poly-Silicon Thin Film, Low-Temperature Poly-Silicon Thin Film Transistor and Manufacturing...
The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods...
2017/0236704 WURTZITE HETEROEPITAXIAL STRUCTURES WITH INCLINED SIDEWALL FACETS FOR DEFECT PROPAGATION CONTROL IN SILICON...
III-N semiconductor heterostructures including a raised III-N semiconductor structures with inclined sidewall facets are described. In embodiments, lateral...
2017/0236703 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD
A substrate processing apparatus includes a spray nozzle that allows a plurality of liquid droplets to collide with a substrate held by a spin chuck, a liquid...
2017/0236702 FLUORINATION DURING ALD HIGH-K, FLUORINATION POST HIGH-K AND USE OF A POST FLUORINATION ANNEAL TO ENGINEER...
Embodiments of the present disclosure generally relate to methods for forming a high-k gate dielectric in a transistor. The high-k gate dielectric may be...
2017/0236701 TIME-OF-FLIGHT MASS SPECTROMETER
An ion transport optical system is disposed between a collision cell and an orthogonal acceleration unit. When releasing ions that are held in the collision...
2017/0236700 Time of Flight Mass Spectrometer
There is provided a mass spectrometer comprising a time of flight mass analyser comprising an acceleration electrode, a time of flight region and an ion...
2017/0236699 MASS SPECTROMETER
Before a sample is pierced with a probe of a PESI ion source, a total ion current is measured under a condition with no voltage applied from a high voltage...
2017/0236698 ION OPTICAL APPARATUS AND MASS SPECTROMETER
An ion optical apparatus and a mass spectrometer are provided. The ion optical apparatus includes at least one planar insulating substrate which is covered...
2017/0236697 INTERACTIVE ANALYSIS OF MASS SPECTROMETRY DATA
This invention relates to graphical user-interactive displays for use in MS-based analysis of protein impurities, as well as methods and software for...
2017/0236696 Cobalt Sputtering Target
A Co sputtering target having a purity of 99.99% to 99.999% and a Si content of 1 wtppm or less. Provided is a Co sputtering target capable of improving...
2017/0236695 Cu-Ga SPUTTERING TARGET AND PRODUCTION METHOD FOR Cu-Ga SPUTTERING TARGET
A Cu--Ga sputtering target made of a composition containing: as metal components excluding fluorine, 5 atomic % or more and 60 atomic % or less of Ga and 0.01...
2017/0236694 SYSTEM AND METHOD FOR INCREASING ELECTRON DENSITY LEVELS IN A PLASMA OF A SUBSTRATE PROCESSING SYSTEM
A system is provided and includes a substrate processing chamber, one or more injectors, and a controller. The one or more injectors inject an electronegative...
2017/0236693 ROTATABLE SUBSTRATE SUPPORT HAVING RADIO FREQUENCY APPLICATOR
A substrate support assembly includes a shaft assembly, a pedestal coupled to a portion of the shaft assembly, and a first rotary connector coupled to the...
2017/0236692 Coaxial Hollow Cathode Plasma Assisted Directed Vapor Deposition and Related Method Thereof
A plasma generation process that is more optimized for vapor deposition processes in general, and particularly for directed vapor deposition processing. The...
2017/0236691 CHEMICAL CONTROL FEATURES IN WAFER PROCESS EQUIPMENT
Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of...
2017/0236690 PLASMA PROCESSING APPARATUS
Disclosed is a plasma processing apparatus including: a processing container that defines a processing space; a microwave generator that generates microwaves...
2017/0236689 PARTICLE GENERATION SUPPRESOR BY DC BIAS MODULATION
Embodiments of the present disclosure generally relate to a method for reducing particle generation in a processing chamber. In one embodiment, the method...
2017/0236688 CHAMBER MEMEBER OF A PLASMA SOURCE AND PEDESTAL WITH RADIALLY OUTWARD POSITIONED LIFT PINS FOR TRANSLATION OF A...
A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is...
2017/0236687 CROSS SECTIONAL DEPTH COMPOSITION GENERATION UTILIZING SCANNING ELECTRON MICROSCOPY
A method for generating cross-sectional profiles using a scanning electron microscope (SEM) includes scanning a sample with an electron beam to gather an...
2017/0236686 ION BEAM IRRADIATION APPARATUS
An apparatus provided with a wafer processing chamber that houses a wafer supporting mechanism supporting a wafer and is used to irradiate the wafer supported...
2017/0236685 MICROREACTOR FOR USE IN MICROSCOPY
An improved microreactor for use in microscopy, use of said microreactor, and a microscope comprising said reactor. The present invention is in the field of...
2017/0236684 Electron Microscope and Method of Aberration Measurement
There is provided an electron microscope capable of measuring aberration with high accuracy. The electron microscope (100) comprises: an electron beam source...
2017/0236683 PARTICLE BEAM APPARATUS AND METHOD FOR OPERATING A PARTICLE BEAM APPARATUS
The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam...
2017/0236682 SYSTEM AND METHOD FOR HIGH POWER PULSE GENERATOR
A device and method for generating pulses to activate and deactivate a kicker magnet is provided. When the kicker magnet is deactivated the circuit generates...
2017/0236681 Method of Aberration Correction and Charged Particle Beam System
There are disclosed an aberration correction method and a charged particle beam system capable of correcting off-axis first order aberrations. The aberration...
2017/0236680 Charged Particle Beam System
There is provided a charged particle beam system in which a detector can be placed in an appropriate analysis position. The charged particle beam system (100)...
2017/0236679 X-RAY GENERATOR AND X-RAY ANALYZER
An X-ray generator including a cathode, an anode provided with two X-ray generation zones, a casing in which the cathode and anode are accommodated, two air...
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