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Patent # Description
2017/0250318 METHOD OF MANUFACTURING LIGHT EMITTING DEVICE PACKAGE
A method of manufacturing a light emitting device package is provided. The method includes preparing a film strip including one or more light blocking regions...
2017/0250317 PHOTOELECTRIC SEMICONDUCTOR DEVICE
The instant disclosure provides a photoelectric semiconductor device including a substrate, a light-emitting diode chip, a converting material, an encapsulant,...
2017/0250316 LIGHT-EMITTING DIODE (LED) DEVICE
A light-emitting diode (LED) device configured to provide a multi-color display includes a plurality of light-emitting cells at least partially defined by a...
2017/0250315 DOT MATRIX LIGHT-EMITTING DIODE BACKLIGHTING LIGHT SOURCE FOR A WAFER-LEVEL MICRODISPLAY AND METHOD FOR...
A dot matrix light-emitting diode (LED) backlighting light source for a wafer-level microdisplay includes a substrate and a bonding layer, multiple LEDs...
2017/0250314 SEMICONDUCTOR LIGHT-EMITTING DEVICE
The present techniques provide a semiconductor light-emitting device in which current diffusion is ensured in a transparent electrode and light absorption by...
2017/0250313 SOLID-STATE RADIATION TRANSDUCER DEVICES HAVING AT LEAST PARTIALLY TRANSPARENT BURIED-CONTACT ELEMENTS, AND...
Solid-state radiation transducer (SSRT) devices having buried contacts that are at least partially transparent and associated systems and methods are disclosed...
2017/0250312 LIGHT-EMITTING DEVICE
A light-emitting device includes a semiconductor layered structure; a conductive substrate disposed below the semiconductor layered structure; one or more...
2017/0250311 LED FOR PLANT ILLUMINATION
A light-emitting diode (LED) for plant illumination includes a substrate, and a PN-junction light-emitting portion over the substrate. The light-emitting...
2017/0250309 LIGHT-EMITTING DEVICE AND DRIVING METHOD THEREOF
In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the...
2017/0250308 CRYSTAL SUBSTRATE, ULTRAVIOLET LIGHT-EMITTING DEVICE, AND MANUFACTURING METHODS THEREFOR
To fabricate a practically useful non-polar AlN buffer layer on a sapphire crystal plate and manufacture a UV light-emitting device on a non-polar crystal...
2017/0250307 SEMICONDUCTOR LIGHT EMITTING DEVICE
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an...
2017/0250306 PHOTODETECTOR AND METHODS OF MANUFACTURE
Photodetector structures and methods of manufacture are provided. The method includes forming undercuts about detector material formed on a substrate. The...
2017/0250305 DIE-CUTTING APPROACHES FOR FOIL-BASED METALLIZATION OF SOLAR CELLS
Die-cutting approaches for foil-based metallization of solar cells, and the resulting solar cells are disclosed herein. Die-cutting approaches for foil-based...
2017/0250304 PHOTODIODE USING GRAPHENE-SILICON QUANTUM DOT HYBRID STRUCTURE AND METHOD OF MANUFACTURING THE SAME
Disclosed is a photodiode, which includes a graphene-silicon quantum dot hybrid structure, having improved optical and electrical characteristics by...
2017/0250303 METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON THIN-FILM SOLAR CELLS BY MEANS METHOD FOR CRYSTALLIZING...
One embodiment of the present invention relates to a method of manufacturing polycrystalline silicon thin-film solar cell by a method of crystallizing a...
2017/0250302 BANDGAP GRADING OF CZTS SOLAR CELL
A method for fabricating a photovoltaic device includes forming a polycrystalline absorber layer including Cu--Zn--Sn--S(Se) (CZTSSe) over a substrate. The...
2017/0250301 SOLAR PANEL WITH OPTICAL LIGHT ENHANCEMENT DEVICE
A double layered superimposed and parallel solar panels having an optical system comprising cylindrical rods and convex lenses at either end of said rods. Said...
2017/0250300 LUMINESCENT SOLAR CONCENTRATOR COMPRISING DISUBSTITUTED BENZOHETERODIAZOLE COMPOUNDS
Luminescent solar concentrator (LSC) comprising at least one disubstituted benzoheterodiazole compound of general formula (I), in which: Z represents a sulfur...
2017/0250299 ENCAPSULATED PHOTOVOLTAIC CELLS AND MODULES
The disclosure relates to photovoltaic modules comprising one or more photovoltaic cells embedded in a fiber-reinforced composite thermosetting material,...
2017/0250298 PHOTONIC CURING OF NANOCRYSTAL FILMS FOR PHOTOVOLTAICS
Methods of making a semiconductor layer from nanocrystals are disclosed. A film of nanocrystals capped with a ligand can be deposited onto a substrate; and the...
2017/0250297 PHOTOVOLTAIC CELL AND LAMINATE METALLIZATION
A photovoltaic laminate is disclosed. Embodiments include placing a first encapsulant on a substantially transparent layer that includes a front side of a...
2017/0250296 Fusion Formable Sodium Containing Glass
Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for...
2017/0250295 METHOD FOR HORIZONTALLY ELECTROCHEMICALLY DEPOSITING METAL
A method for electrochemically depositing metal on a sheet substrate, wherein an upper metal anode is placed above an electrolyte solution on the upper surface...
2017/0250294 LIFT printing of conductive traces onto a semiconductor substrate
A method for metallization includes providing a transparent donor substrate (34) having deposited thereon a donor film (36) including a metal with a thickness...
2017/0250293 OPTICAL SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The present invention provides an optical semiconductor device in which damage of a lens when being mounted and mounting displacement due to suction failures...
2017/0250292 NONVOLATILE MEMORY DEVICE
A nonvolatile memory cell includes a first-conductivity-type silicon substrate, a metal layer formed in a surface of the first-conductivity-type silicon...
2017/0250291 SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE EXTENDING BETWEEN NANOSHEETS
A semiconductor device according to example embodiments of inventive concepts may include a substrate, source/drain regions extending perpendicular to an upper...
2017/0250290 METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE INCLUDING GATE-TO-BULK SUBSTRATE ISOLATION
A method for fabricating a semiconductor device comprises forming a sacrificial layer of a first semiconductor material on a substrate, a layer of a second...
2017/0250289 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a TFT substrate includes the steps of forming an oxide semiconductor layer above a substrate, forming a first oxide film on the oxide...
2017/0250288 Memory Device and Method for Fabricating the Same
A method includes patterning a substrate to form a nanowire over the substrate, applying a plurality of doping processes to the nanowire to form a first...
2017/0250287 BURIED SOURCE SCHOTTKY BARRIER THIN TRANSISTOR AND METHOD OF MANUFACTURE
A Schottky source-gated thin film transistor is provided including: a drain contact; an insulating substrate; a source contact made of a Schottky metal; a...
2017/0250286 Fin Field Effect Transistor (FINFET) Device and Method for Forming the Same
A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate...
2017/0250285 INCREASED CONTACT AREA FOR FINFETS
This disclosure relates to a fin field effect transistor including a gate structure formed on a fin. Source and drain (S/D) regions are epitaxially grown on...
2017/0250284 FORMATION OF WORK-FUNCTION LAYERS FOR GATE ELECTRODE USING A GAS CLUSTER ION BEAM
An angled gas cluster ion beam is used for each sidewall and top of a fin (two applications) to form work-function metal layer(s) only on the sidewalls and top...
2017/0250283 STRAINED SEMICONDUCTOR USING ELASTIC EDGE RELAXATION OF A STRESSOR COMBINED WITH BURIED INSULATING LAYER
An SOI wafer contains a compressively stressed buried insulator structure. In one example, the stressed buried insulator (BOX) may be formed on a host wafer by...
2017/0250282 FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A FinFET including a substrate, a plurality of isolation structures, a plurality of blocking layers, and a gate stack is provided. The substrate has a...
2017/0250281 FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
A fin-type field effect transistor comprising a substrate, at least one gate structure, first spacers, second spacers and source and drain regions is...
2017/0250280 FIN-TYPE FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF
A fin-type field effect transistor comprising a substrate, at least one gate structure, spacers and strained source and drain regions is described. The at...
2017/0250279 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and a filter layer, and strain layers. The substrate has a...
2017/0250278 FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A fin field effect transistor (FinFET) is provided. The FinFET includes a substrate, a gate stack, and strained source and drain regions. The substrate has a...
2017/0250277 LDMOS TRANSISTOR
A MOS transistor includes a substrate, a first region, a second region, a source region, a drain region, an active gate stack, and a dummy gate stack. The...
2017/0250276 SEMICONDUCTOR DEVICES WITH VERTICAL FIELD FLOATING RINGS AND METHODS OF FABRICATION THEREOF
A semiconductor device includes a semiconductor substrate having a first conductivity type. A gate structure is supported by a surface of the semiconductor...
2017/0250275 SILICON CARBIDE SEMICONDUCTOR DEVICE
The present invention is related to a silicon carbide semiconductor device which employs a silicon carbide substrate to form an integrated device. The...
2017/0250274 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes a codoped layer, a channel layer, a barrier layer, and a gate electrode disposed in a trench extending through the barrier...
2017/0250273 GROUP III - NITRIDE DOUBLE-HETEROJUNCTION FIELD EFFECT TRANSISTOR
A semiconductor structure having a buffer layer, a pseudomorphic, impurity doped, back-barrier layer disposed on the buffer layer, a channel layer disposed on...
2017/0250272 ISOLATED III-N SEMICONDUCTOR DEVICES
A semiconductor device with a substrate, a low defect layer formed in a fixed position relative to the substrate, and a barrier layer comprising III-N...
2017/0250271 Semiconductor Device Having an Active Trench and a Body Trench
A semiconductor substrate having a first main surface and a transistor cell includes a drift region, a body region between the drift region and the first main...
2017/0250270 VERTICAL POWER TRANSISTOR WITH DEEP TRENCHES AND DEEP REGIONS SURROUNDING CELL ARRAY
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
2017/0250269 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device includes: a drift layer; a base layer on the drift layer; a collector layer and a cathode layer opposite to the base layer; multiple...
2017/0250268 FIN FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
A FinFET includes a semiconductor substrate, a plurality of insulators, a gate stack, and a strained material. The semiconductor substrate includes at least...
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