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Patent # Description
2017/0250267 FinFET Having Isolation Structure and Method of Forming the Same
A transistor includes a substrate having an upper surface, a fin structure protruding from the upper surface of the substrate, a first isolation structure over...
2017/0250266 Finfets with Low Source/Drain Contact Resistance
An integrated circuit structure includes a semiconductor substrate, insulation regions extending into the semiconductor substrate, with the insulation regions...
2017/0250265 SEMICONDUCTOR DEVICE WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND DOUBLE TRENCH MANUFACTURING...
The present invention is directed to semiconductor processes and devices. More specifically, embodiments of the present invention provide a semiconductor...
2017/0250264 Sidewall Spacers for Self-Aligned Contacts
A semiconductor device and method for fabricating such a device are presented. The semiconductor device includes a first gate electrode of a transistor, a...
2017/0250263 NON-UNIFORM GATE DIELECTRIC FOR U-SHAPE MOSFET
A U-shaped gate dielectric structure is provided that has a horizontal gate dielectric portion having a vertical thickness, and a vertical gate dielectric wall...
2017/0250262 ETCH STOP FOR AIRGAP PROTECTION
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides...
2017/0250261 SEMICONDUCTOR DEVICE
A semiconductor device includes a fin-type active area, nanosheets, a gate, a source/drain region, and insulating spacers. The fin-type active area protrudes...
2017/0250260 Double Gate Transistor Device and Method of Operating
In accordance with an embodiment, a method include switching on a transistor device by generating a first conducting channel in a body region by driving a...
2017/0250259 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A first p type semiconductor region is provided between an n type drift region surrounding a drain region and an n type buried region, and a second p type...
2017/0250257 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
At edge termination region, a trench is disposed near an interface of an active region. Inside the trench, an embedded insulating film is embedded, and inside...
2017/0250256 Semiconductor Device with Needle-Shaped Field Plates and a Gate Structure with Edge and Node Portions
A semiconductor device includes needle-shaped field plate structures extending from a first surface into transistor sections of a semiconductor portion in a...
2017/0250255 Semiconductor Device with Needle-Shaped Field Plate Structures in a Transistor Cell Region and in an Inner...
A semiconductor device includes a semiconductor substrate, a transistor cell region formed in the semiconductor substrate and an inner termination region...
2017/0250254 SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
A silicon carbide semiconductor device can switch between an on-state and an off-state by controlling a channel region with an application of a gate voltage....
2017/0250253 SEMICONDUCTOR DEVICE WITH BURIED CONDUCTIVE REGION, AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
A semiconductor device comprising: a semiconductor body including an active region that houses an electronic component and a passive dielectric region...
2017/0250252 MOSFET Having Source Region Formed in a Double Wells Region
A transistor includes a first gate electrode and a second gate electrode over a substrate and on opposite sides of a drain region, a first source region and...
2017/0250251 SIDEWALL IMAGE TRANSFER NANOSHEET
A method for forming active regions of a semiconductor device comprising forming a nanosheet stack on a substrate, forming the nanosheet stack comprising...
2017/0250250 METHOD, APPARATUS AND SYSTEM FOR IMPROVED NANOWIRE/NANOSHEET SPACERS
A semiconductor structure, comprising a semiconductor substrate; at least one fin, wherein the at least one fin comprises one or more first layers and one or...
2017/0250249 Method of Forming Ultra-Thin Nanowires
Provided is a method of forming a nanowire-based device. The method includes forming a first mask layer over a substrate; forming a first opening in the first...
2017/0250248 FORMING NANOTIPS
A nanotip apparatus which includes nanotips arranged in a pattern on a semiconductor base. Each of the nanotips have a pointed tip portion and a base portion...
2017/0250247 EDGE TERMINATION FOR SUPER-JUNCTION MOSFETS
Edge termination for MOSFETs. In accordance with an embodiment of the present invention, a metal oxide semiconductor field effect transistor (MOSFET) includes...
2017/0250246 VERTICAL POWER TRANSISTOR WITH TERMINATION AREA HAVING DOPED TRENCHES WITH VARIABLE PITCHES
Various improvements in vertical transistors, such as IGBTs, are disclosed. The improvements include forming periodic highly-doped p-type emitter dots in the...
2017/0250245 METHOD FOR MANUFACTURING MULTILAYER CROWN-SHAPED MIM CAPACITOR
A method for fabricating a multi-layer, crown-shaped MIM capacitor is provided. A base having therein a conductive region within a capacitor-forming region is...
2017/0250244 MONOLAYER THIN FILM CAPACITOR AND METHOD FOR MANUFACTURING THE SAME
A monolayer thin film capacitor includes: a bottom electrode; a top electrode; a dielectric layer disposed between the bottom electrode and the top electrode;...
2017/0250243 SERIAL CAPACITOR DEVICE WITH MIDDLE ELECTRODE CONTACT
A capacitor includes a bottom electrode and a top electrode positioned above the bottom electrode. The top electrode and the bottom electrode are conductively...
2017/0250242 DISPLAY DEVICE
Provided is a highly reliable display device that does not easily cause a wiring or an interlayer insulating layer to be cracked when being folded. A display...
2017/0250241 PIXEL CIRCUIT AND DISPLAY DEVICE, AND A METHOD OF MANUFACTURING PIXEL CIRCUIT
The display device including a pixel circuit has a first line, a transistor, a light emitting element, and a second line. The transistor is located between the...
2017/0250240 DISPLAY DEVICE
Provided is a display device including: a first gate line and a second gate line which extend in a first direction; a signal line and a current-supplying line...
2017/0250239 DISPLAY DEVICE AND METHOD OF MANUFACTURING A DISPLAY DEVICE
A display device, including a display region formed of a plurality of pixels, and a terminal region formed on an outer side of the display region, includes a...
2017/0250238 Display Containing Improved Pixel Architectures
The invention relates to improved Organic Light Emitting Transistor (OLET) pixel architecture for OLET based displays.
2017/0250237 DISPLAY DEVICE
In a display device using a substrate having flexibility, a drop in reliability due to defects such as cracks in the case where a substrate is made to curve is...
2017/0250236 DISPLAY PANEL, FABRICATION METHOD AND ELECTRONIC DEVICE
A display panel, an electronic device and a fabrication method are provided. The display panel includes: a substrate, an anode layer and a cathode layer...
2017/0250235 ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
An organic light-emitting diode (OLED) display panel and an OLED display device are provided. The OLED display panel comprises a first substrate; a first...
2017/0250234 ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY PANEL AND MANUFACTURING METHOD
The present disclosure provides an OLED display panel, comprising a substrate and a plurality of pixel regions disposed on the substrate and emitting light in...
2017/0250233 DISPLAY DEVICE
The reflecting layer is formed on a white pixel PW and chromatic color pixels PR, PG, and PB. The semitransparent reflecting layer is formed on the white pixel...
2017/0250232 ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
An organic light-emitting diode (OLED) display panel and an OLED display device are provided. The OLED display panel comprises a first substrate; a first...
2017/0250231 DISPLAY DEVICE
A reflecting layer is provided for each of a white pixel PW and a plurality of chromatic color pixels PR, PG and PB. A semitransparent reflecting layer is...
2017/0250230 ORGANIC LIGHT-EMITTING DISPLAY PANEL AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display panel and an organic light-emitting display device are provided. The organic light-emitting display panel comprises an array...
2017/0250229 DISPLAY PANEL HAVING FORCE SENSING FUNCTION
A display panel, which an also function as a touch input device, includes a substrate and at least one TFT on the substrate. Such a multi-function panel also...
2017/0250228 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device includes a first substrate, a second substrate, a sealing adhesive layer, an organic light-emitting device and a touch...
2017/0250227 ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR
Example embodiments relate to an organic photoelectronic device that includes a first electrode, a light-absorption layer on the first electrode and including...
2017/0250226 IMAGE SENSORS HAVING LIGHT GUIDE MEMBERS
Image sensors include a color photo-sensing photoelectric conversion device, a first color filter and a second color filter disposed under the color...
2017/0250225 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME
A variable resistance memory device includes a plurality of first conductive lines, each of the first conductive lines extends in a first direction, a...
2017/0250224 THREE-DIMENSIONAL MEMORY DEVICE WITH VERTICAL SEMICONDUCTOR BIT LINES LOCATED IN RECESSES AND METHOD OF MAKING...
A three-dimensional memory device includes an alternating stack of electrically conductive layers and insulating layers located over a top surface of a...
2017/0250223 A RESISTIVE RANDOM-ACCESS MEMORY IN PRINTED CIRCUIT BOARD
Provided in one example is an article. The article including: a first electrode; a switching layer disposed over at least a portion of the first electrode, the...
2017/0250222 VARIABLE RESISTANCE MEMORY DEVICES
A variable resistance memory device including a selection pattern; an intermediate electrode contacting a first surface of the selection pattern; a variable...
2017/0250221 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
Provided are a method of manufacturing a magnetoresistive element and a manufacturing system which are capable of manufacturing a magnetoresistive element...
2017/0250220 Light Emitting Diode Chip, Light Emitting Diode, Backlight Source and Display Apparatus
The present invention provides an LED chip including a light-emitting layer, a P electrode, an N electrode, an anode and a cathode, the N electrode, the...
2017/0250219 INORGANIC LED PIXEL STRUCTURE
An inorganic light-emitting diode (iLED) pixel structure includes a transparent pixel substrate having an LED surface, an emission surface opposite the LED...
2017/0250218 METHODS OF FORMING IMAGING PIXEL MICROLENSES
A method of forming a microlens may include using two layers of photoresist. The first photoresist layer may be patterned to form a first portion of a pixel...
2017/0250217 METHOD OF FORMING A SHALLOW PINNED PHOTODIODE
An image sensor with a pinned photodiode includes a photodiode formed in a substrate by implanting dopants of a first type through one or more dielectric...
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