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Patent # Description
2017/0256675 LIGHT EMITTING DEVICE PACKAGE AND LIGHT EMITTING DEVICE COMPRISING SAME (As Amended)
A light emitting device package according to an embodiment comprises: a light emitting device comprising a light emitting structure including a first...
2017/0256674 LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
A light emitting device includes: a light emitting element that includes a light extracting surface, an electrode formed surface opposite to the light...
2017/0256673 NITRIDE SEMICONDUCTOR STRUCTURE
A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a...
2017/0256672 Group III Nitride Heterostructure for Optoelectronic Device
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of...
2017/0256671 AVALANCHE PHOTODIODE WITH LOW BREAKDOWN VOLTAGE
An Si/Ge SACM avalanche photodiodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various...
2017/0256670 SOLAR CELL
A solar cell includes a photoelectric conversion layer; and a front electrode on the photoelectric conversion layer, wherein the front electrode includes a...
2017/0256669 CONFORMAL LENS OVER SPHERICAL DIODES IN A PV PANEL
A PV panel is manufactured using a monolayer of small silicon sphere diodes (10-300 microns in diameter) connected in parallel. The spheres are embedded in an...
2017/0256668 SEMICONDUCTOR EPITAXIAL WAFER AND METHOD OF PRODUCING THE SAME, AND METHOD OF PRODUCING SOLID-STATE IMAGE...
To provide a semiconductor epitaxial wafer having an epitaxial layer with excellent crystallinity, the semiconductor epitaxial wafer is a semiconductor...
2017/0256667 GRAPHENE-SEMICONDUCTOR SCHOTTKY JUNCTION PHOTODETECTOR OF HAVING TUNABLE GAIN
Disclosed herein is a photodetector utilizing graphene. A single-layer graphene channel is formed on a semiconductor substrate doped with n-type impurity. The...
2017/0256666 BACK SIDE ILLUMINATED IMAGE SENSOR WITH GUARD RING REGION REFLECTING STRUCTURE
An imaging sensor system includes a pixel array having a plurality of pixel cells disposed in a first semiconductor layer, where each one of the plurality of...
2017/0256665 APPRATUS FOR GENERATING TERAHERTZ WAVE AND METHOD FOR CONTROLLING TERAHERTZ WAVEFRONT USING THE SAME
The present disclosure relates to a terahertz wave generation apparatus capable of wavefront control. A terahertz wave generating apparatus according to an...
2017/0256664 AERODYNAMIC SOLAR PODS
A method including installing solar pods at varying heights on a tower, where a size of each of the solar pods is inversely related its installation height on...
2017/0256663 METHOD FOR PRODUCING A CONDUCTIVE MULTIPLE SUBSTRATE STACK
A method for producing a multiple-substrate stack from an, in particular wavelength-sensitive, semiconductor substrate and at least one further, in particular...
2017/0256662 Solar panel module
A solar panel module including a cover, a back plate, at least two solar panels, and at least a dark insulating layer is provided. The solar panels are...
2017/0256661 METHOD OF MANUFACTURING PHOTOVOLTAIC PANELS WITH VARIOUS GEOMETRICAL SHAPES
One embodiment of the present invention provides a photovoltaic module. The photovoltaic module includes a front-side cover, a back-side cover, and a plurality...
2017/0256660 SOLAR CELL AND SOLAR CELL MODULE
A solar cell is provided with: an n-type single crystal silicon substrate; an n-type amorphous silicon layer disposed on a first main surface of the n-type...
2017/0256659 SELF-BALANCING POSITION SENSITIVE DETECTOR
A self-balancing optical position sensitive detector includes a pair of spaced apart, parallel, longitudinally extending doped regions on a first surface on a...
2017/0256658 OPTICAL SENSOR DEVICE
A package for an optical sensor device has a double-molded structure in which a first resin molded portion and a second resin molded portion are integrated....
2017/0256657 MPS DIODE
There is provided an MPS diode comprising a first semiconductor layer that is an N type; P-type semiconductor regions and N-type semiconductor regions that are...
2017/0256656 SCHOTTKY DIODE AND MANUFACTURING METHOD OF THE SAME
Provided herein is a Schottky diode including: a first semiconductor layer; an intermediate layer provided over the first semiconductor layer; a second...
2017/0256655 GATE-TO-BULK SUBSTRATE ISOLATION IN GATE-ALL-AROUND DEVICES
A method for fabricating a semiconductor device comprises forming a sacrificial layer of a first semiconductor material on a substrate, a layer of a second...
2017/0256654 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. One embodiment of the present invention is a...
2017/0256653 DISPLAY PANEL
A display panel includes a first substrate, and the first substrate includes a base plate; a first conducive line disposed on the base plate and extending...
2017/0256652 OXIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
An oxide semiconductor device and a method for manufacturing the same are provided in the present invention. The oxide semiconductor device includes a back...
2017/0256651 LOW TEMPERATURE POLY-SILICON TFT SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention provides a LTPS TFT substrate and a manufacturing method thereof. The LTPS TFT substrate of the present invention includes a metal layer...
2017/0256650 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide...
2017/0256649 SEMICONDUCTOR DEVICE
A semiconductor device includes a first conductive film, an insulating film, a second conductive film, and a semiconductor film. The insulating film is formed...
2017/0256648 Semiconductor Device, Display Device Including The Semiconductor Device, Display Module Including The Display...
A semiconductor device including a transistor is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, a second...
2017/0256647 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, OR DISPLAY DEVICE INCLUDING THE SAME
A gate electrode, a first insulating film thereover, an oxide semiconductor film thereover, a source electrode and a drain electrode thereover, and a second...
2017/0256646 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A transistor having an oxide semiconductor film in a channel formation region and a manufacturing method thereof are disclosed. The transistor is formed by the...
2017/0256645 INTEGRATED CIRCUIT DEVICE AND METHOD OF MANUFACTURING THE SAME
An integrated circuit (IC) device includes a pair of fin-shaped active areas that are adjacent to each other with a fin separation area therebetween, the pair...
2017/0256644 DIRECTIONAL DEPOSITION OF PROTECTION LAYER
A method for forming a fin device includes forming semiconductor fins over a first dielectric layer. A second dielectric layer is directionally deposited into...
2017/0256643 Ultra High Voltage Device
According to an embodiment, a semiconductor device is provided. The device includes a second region having a greater curvature than a first region. The device...
2017/0256642 Tunneling Field Effect Transistor
A tunneling field-effect transistor with an insulated planar gate adjacent to a heterojunction between wide-bandgap semiconductor, such as silicon carbide, and...
2017/0256641 Semiconductor Device Comprising a First Gate Electrode and a Second Gate Electrode
A semiconductor device includes a transistor. The transistor includes a source region and a drain region disposed adjacent to a first main surface of a...
2017/0256640 Semiconductor Device Structure and Method for Forming the Same
A method for forming a semiconductor device structure is provided. The method includes forming a dielectric layer over a substrate. The dielectric layer has a...
2017/0256639 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes an isolation layer disposed over a substrate, first and second fin structures, a gate structure, a source/drain structure. The...
2017/0256638 GaN-on-Si SEMICONDUCTOR DEVICE STRUCTURES FOR HIGH CURRENT/ HIGH VOLTAGE LATERAL GaN TRANSISTORS AND METHODS OF...
A GaN-on-Si device structure and a method of fabrication are disclosed for improved die yield and device reliability of high current/high voltage lateral GaN...
2017/0256637 SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, and a stacked portion over the substrate, the stacked structure including a first nitride semiconductor layer...
2017/0256636 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V...
2017/0256635 NITRIDE SEMICONDUCTOR AND NITRIDE SEMICONDUCTOR MANUFACTURING METHOD
In a nitride semiconductor including a Si substrate and a nitride semiconductor stacked body disposed on the Si substrate, the half value width of an X-ray...
2017/0256634 SEMICONDUCTOR DEVICE
A linear active cell region is formed from a plurality of divided active cell regions arranged apart from each other in a second direction (y direction). The...
2017/0256633 SKYRMION DIODE AND METHOD OF MANUFACTURING THE SAME
The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body....
2017/0256632 FINFET AND FABRICATION METHOD THEREOF
Present embodiments provide for a FinFET and fabrication method thereof. The fabrication method includes two selective etching processes to form the channel....
2017/0256631 THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND DISPLAY DEVICE
The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a...
2017/0256630 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
Disclosed is a method of manufacturing a semiconductor device. The semiconductor device may be manufactured by forming a trench extended in a first direction...
2017/0256629 METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT AND METHOD FOR FORMING MASK PATTERN OF THE SAME
A method for manufacturing a semiconductor element includes forming a first region in a semiconductor region by ion-implanting impurities using a first mask;...
2017/0256628 METHODS OF FORMING FINE PATTERNS
A method of forming fine patterns including forming a plurality of first sacrificial patterns on a target layer, the target layer on a substrate, forming first...
2017/0256627 METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE
A method for forming a semiconductor device structure is provided. The method includes forming a target layer over a substrate and forming a seed layer over...
2017/0256626 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
A semiconductor device includes a substrate, a nitride semiconductor layer formed on the substrate, a gate electrode formed on the nitride semiconductor layer;...
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