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Patent # Description
2017/0256624 COMMON METAL CONTACT REGIONS HAVING DIFFERENT SCHOTTKY BARRIER HEIGHTS AND METHODS OF MANUFACTURING SAME
Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include...
2017/0256623 Perforating Contact to Semiconductor Layer
A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating...
2017/0256622 RARE EARTH METAL SURFACE-ACTIVATED PLASMA DOPING ON SEMICONDUCTOR SUBSTRATES
Methods of doping semiconductor substrates using deposition of a rare earth metal-containing film such as an yttrium-containing film, and annealing techniques...
2017/0256621 THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE
A thin film transistor, a method for fabricating the same, an array substrate, and a display device are provided. The thin film transistor comprises a copper...
2017/0256620 TRANSISTOR ARRAY SUBSTRATE AND DISPLAY PANEL USING THE SAME
A display panel comprises a first substrate, a second substrate, a display layer and transistors. One of the transistors includes a gate electrode disposed on...
2017/0256619 Semiconductor Device Having Field Plate Structures, Source Regions and Gate Electrode Structures Between the...
A semiconductor device includes a semiconductor substrate having a first surface, first and second field plate structures extending in a first direction...
2017/0256618 Semiconductor Component Including Aluminum Silicon Nitride Layers
There are disclosed herein various implementations of a semiconductor component including one or more aluminum silicon nitride layers. The semiconductor...
2017/0256617 LIGHT EMITTING DEVICE HAVING VERTICAL STRUCTURE AND PACKAGE THEREOF
A light emitting device package can include a sub-mount having a first surface, a second surface, a bottom surface and a cavity; a first layer on the first...
2017/0256616 SOI SUBSTRATE AND MANUFACTURING METHOD THEREOF
The present invention application provides a method for manufacturing a SOI substrate, and the method comprising: providing a first semiconductor substrate;...
2017/0256615 Multi-Gate Device and Method of Fabrication Thereof
A semiconductor device includes a fin extending from a substrate. The fin has a source/drain region and a channel region. The channel region includes a first...
2017/0256614 VERTICAL INSULATED GATE TURN-OFF THYRISTOR WITH INTERMEDIATE P+ LAYER IN P-BASE
An insulated gate turn-off thyristor has a layered structure including a p+ layer (e.g., a substrate), an n-epi layer, a p-well, vertical insulated gate...
2017/0256613 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A semiconductor device includes an isolation layer, first and second fin structures, a gate structure and a source/drain structure. The isolation layer is...
2017/0256612 CO-INTEGRATION OF SILICON AND SILICON-GERMANIUM CHANNELS FOR NANOSHEET DEVICES
Nanosheet semiconductor devices and methods of forming the same include forming a first nanosheet stack in a first device region with layers of a first channel...
2017/0256611 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a semiconductor substrate. A first fin extends in a first direction. A first nano sheet structure includes at least two first...
2017/0256610 CO-INTEGRATION OF SILICON AND SILICON-GERMANIUM CHANNELS FOR NANOSHEET DEVICES
Nanosheet semiconductor devices and methods of forming the same include forming a first nanosheet stack in a first device region with layers of a first channel...
2017/0256609 SEMICONDUCTOR DEVICE
A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and...
2017/0256608 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
A semiconductor device may include a substrate, a first nanowire, a gate electrode, a first gate spacer, a second gate spacer, a source/drain and a spacer...
2017/0256607 POWER SEMICONDUCTOR DEVICE
The present examples relate to a power semiconductor device. The present examples also relate to a power semiconductor device that maintains a breakdown...
2017/0256606 Coplanar Metal-Insulator-Metal Capacitive Structure
A method of fabricating a metal-insulator-metal (MIM) capacitor structure on a substrate includes forming a patterned metal layer over the substrate; forming...
2017/0256605 METHOD FOR FABRICATING ELECTRONIC DEVICE
A method for fabricating an electronic device is provided, and the method comprises the steps of: forming a lower electrode on a substrate; forming a...
2017/0256604 Multi-Layer Electronic Device
A multi-layer electronic device is disclosed that comprises a ceramic layer, a first electrode layer, and a second electrode layer. The first electrode layer...
2017/0256603 MAGNETIC COUPLING AND CANCELLATION ARRANGEMENT
An inductor arrangement comprises a first inductor formed on a substrate, a second inductor formed on the substrate, a first loop formed on the substrate...
2017/0256602 SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND SIGNAL TRANSMITTING/RECEIVING METHOD USING THE...
A semiconductor device includes a semiconductor substrate including a semiconductor chip formation region, a chip internal circuit provided within the...
2017/0256601 ORGANIC LIGHT EMITTING DIODE DISPLAY
An organic light emitting diode display includes a substrate, a scan line on the substrate for transferring a scan signal, a data line crossing the scan line...
2017/0256600 DISPLAY DEVICE
According to one embodiment, a display device includes a first substrate including as insulating substrate with a first through hole, a pad electrode...
2017/0256599 DISPLAY APPARATUS
A display apparatus includes a substrate having a bending region between a first region and a second region, the bending region being configured to be bent...
2017/0256598 ORGANIC LIGHT-EMITTING DISPLAY DEVICE
An organic light-emitting display device includes a first substrate having transmitting regions and pixel regions separated from each other by the transmitting...
2017/0256597 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
Provided are an organic light-emitting display apparatus and a method of manufacturing the same. The organic light-emitting display apparatus includes: a...
2017/0256596 ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE
An organic electroluminescence display device has a barrier structure that is placed on an upper electrode. The barrier structure has a first organic sealing...
2017/0256595 ORGANIC LIGHT-EMITTING DIODE DISPLAY PANEL AND ORGANIC LIGHT-EMITTING DIODE DISPLAY DEVICE
An organic light-emitting diode (OLED) display panel and an OLED display device are provided. The (OLED) display panel comprises a first substrate; a first...
2017/0256594 FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A method of manufacturing a flexible display device includes forming a base substrate on a first sacrificial layer formed on a first supporting substrate,...
2017/0256593 TOUCH DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME
A touch display panel including a thin-film transistor substrate including a thin-film transistor, a pixel defining layer disposed on the thin-film transistor...
2017/0256592 RADIATION-EMITTING APPARATUS AND METHOD FOR PRODUCING SAME
The invention relates to a radiation-emitting device (600), which comprises a substrate (100), an inner optoelectronic component (300) and an outer...
2017/0256591 QUANTUM DOT COLOR FILTER SUBSTRATE AND MANUFACTURING METHOD THEREOF
The invention discloses a QD CF substrate and manufacturing method thereof. The manufacturing method uses a patterned photo-resist layer as a masking layer to...
2017/0256590 BLOCK ARCHITECTURE FOR VERTICAL MEMORY ARRAY
Three-dimensional memory structures that are configured to use area efficiently, and methods for providing three-dimensional memory structures that use area...
2017/0256589 SWITCHING ELEMENT, SWITCHING ELEMENT ARRAY, AND RESISTIVE RANDOM ACCESS MEMORY INCLUDING SWITCHING ELEMENT, AND...
A first electrode and an insulation material layer are sequentially formed over a substrate. A doping mask pattern is formed over the insulation material...
2017/0256588 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
A semiconductor device according to an embodiment includes: a stacked body including a plurality of first conductive films stacked via an inter-layer...
2017/0256587 CROSSBAR SWITCH, LOGIC INTEGRATED CIRCUIT USING THE SAME, AND SEMICONDUCTOR DEVICE
A purpose of the invention is to provide a crossbar switch for reducing the layout areas of a crossbar switch and peripheral circuits thereof. A crossbar...
2017/0256586 SEMICONDUCTOR MEMORY DEVICE
A semiconductor memory device according to an embodiment comprises: a first wiring line extending in a first direction; a second wiring line extending in a...
2017/0256585 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
According to one embodiment, a semiconductor memory device includes a substrate having resistance-change elements, a first insulating film provided on the...
2017/0256584 MAGNETORESISTIVE MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME
According to one embodiment, a magnetoresistive memory device, includes first wirings arranged parallel to each other in or on a substrate, second wirings...
2017/0256583 DISPLAY APPARATUS AND ELECTRONIC DEVICE
A display apparatus includes a display panel, a driving integrated circuit (IC), and an anisotropic conductive film. The display panel includes a non-display...
2017/0256582 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
In order to form a light receiving element having high reliability and a MOS transistor together on the same silicon substrate, after forming a gate electrode...
2017/0256581 DETECTOR PACK AND X-RAY CT APPARATUS
According to an embodiment, a detector pack comprises a first substrate and a second substrate. the first substrate includes a first surface and a second...
2017/0256580 IMAGING DEVICE
An imaging device includes a plurality of arranged imaging elements each including: a light-receiving element configured to generate charge from received light...
2017/0256579 SEMICONDUCTOR DEVICE HAVING A LIGHT RECEIVING ELEMENT
Provided is a semiconductor device having a light receiving element in which a plurality of photodiodes are formed on a top surface of a P-type semiconductor...
2017/0256578 IMAGING APPARATUS AND ELECTRONIC APPARATUS
An imaging apparatus includes: an interposer on which an image sensor including a light reception section is disposed; a translucent member that is provided on...
2017/0256577 SOLID-STATE IMAGING DEVICE, IMAGING APPARATUS, ELECTRONIC APPARATUS, AND SEMICONDUCTOR DEVICE
The present technology relates to a solid-state imaging device, an imaging apparatus, an electronic apparatus, and a semiconductor device, which can prevent...
2017/0256576 HIGH RELIABILITY HOUSING FOR A SEMICONDUCTOR PACKAGE
Implementations of semiconductor packages may include: a substrate coupled to one or more die and to one or more connectors, a glass lid coupled over one or...
2017/0256575 PIXEL UNIT AND IMAGING DEVICE
An pixel unit includes a photoelectric conversion element, a transfer transistor having a transfer gate abutting on the photoelectric conversion element, and a...
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