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Patent # Description
2017/0256422 METHOD FOR INTRODUCING AT LEAST ONE CUTOUT OR APERTURE INTO A SHEETLIKE WORKPIECE
A method for introducing at least one cutout, in particular in the form of an aperture, into a sheetlike workpiece having a thickness of less than 3 mm,...
2017/0256421 THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURING METHOD AND THIN-FILM TRANSISTOR SUBSTRATE MANUFACTURED WITH SAME
The present invention provides a TFT substrate manufacturing method and a TFT substrate manufactured with the method. The TFT substrate manufacturing method of...
2017/0256420 THERMAL PROCESSING METHOD FOR WAFER
The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a non-oxygenated gas mixture comprising...
2017/0256419 THERMAL PROCESSING METHOD FOR WAFER
The present invention relates to a thermal processing method for wafer. A wafer is placed in an environment filled with a gas mixture comprising oxygen gas and...
2017/0256418 Lithography Patterning with a Gas Phase Resist
Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate,...
2017/0256417 METHOD OF FORMING PATTERNS
A substrate having a target material layer is provided. A first hard mask layer, a second hard mask layer, and a photoresist layer are formed on the target...
2017/0256416 ATOMIC LAYER ETCHING OF AL203 USING A COMBINATION OF PLASMA AND VAPOR TREATMENTS
A method for performing atomic layer etching (ALE) on a substrate, including the following method operations: performing a surface modification operation on a...
2017/0256415 METHOD OF GENERATING PLASMA IN REMOTE PLASMA SOURCE AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING THE...
Provided are a method of generating plasma and a method of fabricating a semiconductor device including the method, which may improve selectivity in an etching...
2017/0256414 Asymmetric Application of Pressure to a Wafer During a CMP Process
A method includes measuring a topography of a wafer, determining that a first portion of the wafer has a greater thickness than a specified thickness. The...
2017/0256413 Semiconductor Devices Using Auxiliary Layers for Trimming Margin and Devices So Formed
A method of fabricating a semiconductor device includes forming a linear preliminary mask pattern in a first direction on a substrate. The preliminary mask...
2017/0256412 PLASMA TREATMENT METHOD
The yield of a product is improved when a substrate held by a conveyance carrier is subjected to a plasma treatment. A plasma treatment method of the substrate...
2017/0256411 SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME
A semiconductor device includes a substrate; a hydrogen insulating layer disposed on the substrate and including hydrogen ions; a first level layer disposed on...
2017/0256410 METHOD AND APPARATUS FOR DEPOSITING AMORPHOUS SILICON FILM
Provided is a method and apparatus for depositing an amorphous silicon film. The method includes supplying a source gas and an atmospheric gas onto a substrate...
2017/0256409 WELL AND PUNCH THROUGH STOPPER FORMATION USING CONFORMAL DOPING
A method for doping fins includes depositing a first dopant layer at a base of fins formed in a substrate, depositing a dielectric layer on the first dopant...
2017/0256407 METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR STACKED BODY AND NITRIDE SEMICONDUCTOR STACKED BODY
A method for producing a nitride semiconductor stacked body includes: a first nitride semiconductor layer forming step of forming a first nitride semiconductor...
2017/0256406 PROCESSES FOR SHAPING NANOMATERIALS
Processes for shaping one- and two-dimensional nanomaterials, and thereby inducing local strains therein preferably to control one or more of their material...
2017/0256405 SELECTIVE NANOSCALE GROWTH OF LATTICE MISMATCHED MATERIALS
Exemplary embodiments provide materials and methods of forming high-quality semiconductor devices using lattice-mismatched materials. In one embodiment, a...
2017/0256404 Buffer Layers Having Composite Structures
Disclosed is a wafer or a material stack for semiconductor-based optoelectronic or electronic devices that minimizes or reduces misfit dislocation, as well as...
2017/0256403 Method of Manufacturing Buffer Layers Having Composite Structures
Disclosed is a method of manufacturing a semiconductor-based wafer for reducing misfit dislocation. The method includes steps of depositing a basis buffer...
2017/0256402 SELF-ASSEMBLED MONOLAYER BLOCKING WITH INTERMITTENT AIR-WATER EXPOSURE
Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used...
2017/0256401 EMISSIVITY, SURFACE FINISH AND POROSITY CONTROL OF SEMICONDUCTOR REACTOR COMPONENTS
An apparatus and methods are provided related to a surface of a reaction chamber assembly component. The surface may be roughened and/or anodized to provide...
2017/0256400 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A semiconductor device includes a first semiconductor layer made of a nitride semiconductor and formed on a substrate, a second semiconductor layer made of a...
2017/0256399 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films
Atomic layer deposition (ALD) process formation of silicon oxide with temperature >500.degree. C. is disclosed. Silicon precursors used have a formula of: ...
2017/0256398 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
Disclosed is a substrate processing apparatus. The substrate processing apparatus includes a container body, and a holding member that conveys the substrate...
2017/0256397 SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND STORAGE MEDIUM
Disclosed is a substrate processing apparatus including a dry processing unit and a controller. The dry processing unit includes: a chamber that accommodates...
2017/0256396 Novel Grafting Agent For Forming Spacer Layer
A method includes forming a first layer over a substrate; forming a patterned photoresist layer over the first layer; applying a solution over the patterned...
2017/0256395 TRIM METHOD FOR PATTERNING DURING VARIOUS STAGES OF AN INTEGRATION SCHEME
Provided is a method for critical dimension (CD) trimming of a structure pattern in a substrate, the method comprising: providing a substrate in a process...
2017/0256394 FORMATION OF HETEROEPITAXIAL LAYERS WITH RAPID THERMAL PROCESSING TO REMOVE LATTICE DISLOCATIONS
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer...
2017/0256393 Systems and Methods for In-Situ Wafer Edge and Backside Plasma Cleaning
A lower electrode plate receives radiofrequency power. A first upper plate is positioned parallel to and spaced apart from the lower electrode plate. A...
2017/0256392 LIQUID PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
In drying a substrate disposed inside a processing container after performing a liquid processing on the substrate, a low humidity gas for lowering a humidity...
2017/0256391 SILICON CARBIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
A silicon carbide single crystal substrate includes a first main surface, a second main surface, and a circumferential edge portion. The second main surface is...
2017/0256390 SEMICONDUCTOR STRUCTURE WITH ETCHED FIN STRUCTURE
Semiconductor structures are provided. The semiconductor structure includes a substrate and a first fin structure and a second fin structure formed over the...
2017/0256389 Ion Beam Mass Pre-Separator
An apparatus for separating ions includes an electrode arrangement having a length extending between first and second ends. The first end is configured to...
2017/0256388 MASS ANALYSIS METHOD AND INDUCTIVELY COUPLED PLASMA MASS SPECTROMETER
An Inductively Coupled Plasma Mass Spectrometer including: a plasma ionization part; a mass analysis part; a storage part that stores ion information about...
2017/0256387 FOCUSING ION GUIDING APPARATUS AND MASS SPECTROGRAPHIC ANALYSIS APPARATUS
A focusing ion guiding apparatus includes at least one ion guiding inlet and ion guiding outlet connected to each other via a transport axial line; at least...
2017/0256386 Magnetic Spattering Coating Device and Target Device Thereof
A target device for a magnetic spattering coating device includes: a spattering target fixture; a target bearing plate installed on the spattering target...
2017/0256385 Three-Dimensional Plasma Printer
In one aspect, a method is described. The method may include ionizing a plasma gas to generate a plasma in a plasma source and accelerating the plasma toward a...
2017/0256384 PLASMA PROCESSING APPARATUS
A plasma processing apparatus for plasma processing a substrate comprising includes a chamber having one or more walls, in which a portion of the walls of the...
2017/0256383 CHAMBER OF PLASMA SYSTEM, LINER FOR PLASMA SYSTEM AND METHOD FOR INSTALLING LINER TO PLASMA SYSTEM
A chamber of a plasma system includes a chamber wall defining a plasma processing area, a substrate supporter configured to support a substrate in the plasma...
2017/0256382 SUBSTRATE PROCESSING APPARATUS
A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in...
2017/0256381 SUBSTRATE PROCESSING APPARATUS
There is provided a substrate processing apparatus which performs a film forming process by supplying a raw material gas to a substrate and irradiating plasma...
2017/0256380 AUTOMATED TEM SAMPLE PREPARATION
Techniques are described that facilitate automated extraction of lamellae and attaching the lamellae to sample grids for viewing on transmission electron...
2017/0256379 METHOD OF DESIGNING X-RAY TUBE HAVING PLANAR EMITTER WITH TUNABLE EMISSION CHARACTERISTICS
A method of designing an electron emitter can include: determining a desired cross-sectional profile of an electron emission from an electron emitter and...
2017/0256378 ION FILTER AND METHOD OF MANUFACTURING SAME
An ion filter used for an electron multiplier includes an insulating substrate; a first conductive layer formed on one main surface of the substrate; and a...
2017/0256377 COMMUTATOR STRUCTURE COMPRISING SEVERAL CHANNELS OF PHASE CHANGE MATERIAL AND INTERDIGITATED CONTROL ELECTRODES
RF commutator including: a phase change material (7) arranged between a first conducting element (2) and a second conducting element (4), means of heating...
2017/0256376 ACTUATION APPARATUS FOR MAGNETICALLY-TRIGGERED PROXIMITY SWITCHES
Actuation apparatus for use with magnetically-triggered proximity switches are described herein. An example apparatus includes an actuator shaft having a first...
2017/0256375 Pressure Responsive Switch for Actuating a Device
A switch responsive to a pressure differential, including a pressure response mechanism for providing a pressure response in response to the pressure...
2017/0256374 High Voltage Circuit Breaker, System, Vacuum Interrupter Module and Associated Drive Module
A high voltage circuit breaker comprises a vacuum interrupter module, a drive module, and an actuator. The vacuum interrupter module has a vacuum interrupter...
2017/0256373 INTERNAL TULIP SLEEVE OF THE FEMALE ARCING CONTACT OF A HIGH VOLTAGE ELECTRIC CIRCUIT BREAKER
An internal tulip sleeve for the female arcing contact of a high voltage circuit breaker. According to the invention, this sleeve comprises a body of...
2017/0256372 OPERATING MECHANISM OF CIRCUIT BREAKER
An operating mechanism of a circuit breaker comprising a static contact, a movable contact provided on a contact support and an operating handle that is in...
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