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Patent # Description
2017/0287969 SEMICONDUCTOR IMAGE SENSORS HAVING CHANNEL STOP REGIONS AND METHODS OF FABRICATING THE SAME
A semiconductor device includes a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated...
2017/0287968 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE
Disclosed herein is a semiconductor device including: a first semiconductor chip having an electronic circuit section and a first connecting section formed on...
2017/0287967 VIA STRUCTURES INCLUDING ETCH-DELAY STRUCTURES AND SEMICONDUCTOR DEVICES HAVING VIA PLUGS
A semiconductor device includes a lower device and an upper device disposed on the lower device. The lower device includes a lower substrate, a lower plug pad...
2017/0287966 Image Sensor Contact Enhancement
A method of image sensor fabrication includes providing a plurality of photodiodes disposed in a semiconductor material and a floating diffusion disposed in...
2017/0287965 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
The semiconductor device includes a semiconductor substrate having a main surface and a back surface, an device isolation film, formed over the main surface of...
2017/0287964 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS
Provided is a semiconductor device including: a multilayer substrate including an optical element; a light-transmitting plate provided on the substrate to...
2017/0287963 OPTOELECTRONIC MODULES HAVING A SILICON SUBSTRATE, AND FABRICATION METHODS FOR SUCH MODULES
Optoelectronic modules include a silicon substrate in which or on which there is an optoelectronic device. An optics assembly is disposed over the...
2017/0287962 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state imaging device that can achieve a higher image quality by reducing image quality degradation, a method of...
2017/0287961 SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
A solid state imaging device including: a pixel region that is formed on a light incidence side of a substrate and to which a plurality of pixels that include...
2017/0287960 SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state imaging device that is designed to reduce reflection of incident light at the sidewall surface of the light...
2017/0287959 IMAGE SENSOR
An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer...
2017/0287958 SOLID-STATE IMAGE PICKUP APPARATUS AND ELECTRONIC APPARATUS
The present disclosure relates to a solid-state image pickup apparatus and an electronic apparatus capable of preventing charges accumulated in a PD from being...
2017/0287957 SOLID STATE IMAGING DEVICE AND ELECTRONIC APPARATUS
Provided is a solid state imaging device including: a pixel portion where pixel sharing units are disposed in an array shape and where another one pixel...
2017/0287956 SOLID-STATE IMAGING DEVICE
A solid-state imaging device includes a well formed of a first semiconductor region of a first conductivity type provided in a semiconductor substrate, a pixel...
2017/0287955 PHOTOELECTRIC CONVERSION APPARATUS AND CAMERA
A photoelectric conversion apparatus includes an element isolating portion that is disposed on a side of a front surface of a semiconductor layer and...
2017/0287954 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
The present disclosure provides a semiconductor device including: a light receiving portion provided in a semiconductor layer of a first conductor type, the...
2017/0287953 FIELD-EFFECT TRANSISTOR DEVICES HAVING PROXIMITY CONTACT FEATURES
Field-effect transistor (FET) devices are described herein that include an insulator layer, a field-effect transistor implemented over the insulator layer, a...
2017/0287952 ARRAY SUBSTRATE, DISPLAY PANEL AND DISPLAY DEVICE
An array substrate, a display panel and a display device are provided. The array substrate comprises: an active area, a package area and a drive circuit area,...
2017/0287950 THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE
The technical disclosure relates to a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film...
2017/0287949 DISPLAY DEVICE
A display device is disclosed. In one aspect, the display device includes a substrate, a first signal line formed over the substrate and a first insulating...
2017/0287948 DISPLAY SUBSTRATE, MANUFACTURING METHOD THEREFOR AND DISPLAY DEVICE
Provided is a display substrate. The display substrate includes a base substrate and a thin film transistor which is formed on the base substrate, wherein the...
2017/0287947 ARRAY SUBSTRATE AND FABRICATION METHOD, DISPLAY PANEL, AND DISPLAY DEVICE
The present disclosure provides an array substrate, including a substrate, a first functional layer configured on one side of the substrate, a first insulating...
2017/0287946 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX SUBSTRATE USING SEMICONDUCTOR DEVICE
According to one embodiment, a semiconductor device includes an insulating substrate including a pixel area and a peripheral circuit area around the pixel...
2017/0287945 THIN FILM TRANSISTOR ARRAY PANNEL AND MANUFACTURING METHOD OF THE SAME
A thin film transistor array panel includes a substrate, a data line and a light blocking layer disposed on the substrate, a thin film transistor disposed on...
2017/0287944 ARRAY SUBSTRATE, CURVED DISPLAY PANEL AND CURVED DISPLAY DEVICE
An array substrate, a curved display panel and a curved display device are provided, to improve visual effect and image quality of the display panel being...
2017/0287943 HIGH APERTURE RATIO DISPLAY BY INTRODUCING TRANSPARENT STORAGE CAPACITOR AND VIA HOLE
This disclosure provides apparatuses and methods of manufacturing apparatuses including thin film transistors (TFTs) and storage capacitors. An apparatus can...
2017/0287942 METHOD TO IMPROVE CRYSTALLINE REGROWTH
The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier...
2017/0287941 ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS
An electro-optical device includes one or more control lines that include a scanning line, a data line and a pixel circuit. The pixel circuit has a drive...
2017/0287940 DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC DEVICE
A wiring having excellent electrical characteristics is provided. A wiring having stable electrical characteristics is provided. A device is manufactured...
2017/0287939 DISPLAY DEVICE
According to an aspect, a display device includes: a substrate including a display region and a non-display region surrounding the display region; at least one...
2017/0287938 DISPLAY APPARATUS
A display apparatus includes a substrate, a circuit, and a pixel electrode. The substrate includes a display area and a peripheral area outside the display...
2017/0287937 DISPLAY DEVICE CAPABLE OF REDUCING RESISTANCE OF DRIVING VOLTAGE SUPPLY WIRES
A display device includes a display panel including a display area and a peripheral area, a plurality of data lines and a plurality of driving voltage lines...
2017/0287936 DISPLAY DEVICE
A display device includes a substrate including a pixel area and a peripheral area located outside the pixel area; pixels located in the pixel area; power...
2017/0287935 VARIABLE BURIED OXIDE THICKNESS FOR SILICON-ON-INSULATOR DEVICES
Variable buried oxide thickness for silicon-on-insulator devices. In some embodiments, a radio-frequency device can include a silicon-on-insulator substrate...
2017/0287934 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
An optical waveguide for optical signals is formed in a semiconductor layer of an SOI substrate, a heater for heating the optical waveguide is formed on a...
2017/0287933 METAL OXIDE SEMICONDUCTOR CELL DEVICE ARCHITECTURE WITH MIXED DIFFUSION BREAK ISOLATION TRENCHES
A standard cell IC includes pMOS transistors in a pMOS region of a MOS device. The pMOS region extends between a first cell edge and a second cell edge...
2017/0287932 SEMICONDUCTOR DEVICE
Disclosed are a semiconductor device and a manufacturing method thereof. The semiconductor device includes source select lines, word lines, drain select lines,...
2017/0287931 STACKED TYPE SEMICONDUCTOR MEMORY DEVICE
According to one embodiment, a semiconductor memory device includes a stacked body which is provided on a substrate and in which an insulating film and an...
2017/0287930 THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
A three-dimensional (3D) semiconductor device includes a stack structure including electrodes vertically stacked on a substrate, a channel structure coupled to...
2017/0287929 SEMICONDUCTOR MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME
The inventive concepts provide semiconductor memory devices and methods for fabricating the same. The semiconductor memory device may include a plurality of...
2017/0287928 SEMICONDUCTOR MEMORY DEVICES
Semiconductor devices are provided. Semiconductor devices may include a stack structure including word lines stacked on a substrate, first vertical pillars and...
2017/0287927 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING BARRIER PATTERN
The invention is related to a method for manufacturing a semiconductor device having a barrier pattern. The method includes alternately forming first...
2017/0287926 MULTILEVEL MEMORY STACK STRUCTURE EMPLOYING STACKS OF A SUPPORT PEDESTAL STRUCTURE AND A SUPPORT PILLAR STRUCTURE
Memory-opening semiconductor material portions and support opening fill structures can be simultaneously formed through a first alternating stack of first...
2017/0287925 COBALT-CONTAINING CONDUCTIVE LAYERS FOR CONTROL GATE ELECTRODES IN A MEMORY STRUCTURE
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator...
2017/0287924 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
A fin includes a first region and a second region arranged on a positive side in an X-axis direction with respect to the first region. A control gate electrode...
2017/0287923 Method and system for object reconstruction
pattern. A processor reconstructs a three-dimensional (3D) map of the object responsively to a shift of the pattern in the image data relative to a reference...
2017/0287922 SEMICONDUCTOR MEMORY DEVICE AND FABRICATION METHOD THEREOF
A method is provided for fabricating a semiconductor memory device. The method includes providing a substrate and forming a stacked layer on the substrate,...
2017/0287921 METHOD OF IMPROVING LOCALIZED WAFER SHAPE CHANGES
A method of manufacturing an integrated circuit including forming trenches into the surface of a crystalline wafer and the trenches extending along a...
2017/0287920 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SAME
A semiconductor device and a manufacturing method for the same are provided in such a manner that the oxygen barrier film and the conductive plug in the base...
2017/0287919 SINGLE EVENT UPSET (SEU) MITIGATION FOR FINFET TECHNOLOGY USING FIN TOPOLOGY
Front end circuits that include a FinFET transistor are described herein. In one example, the front end circuit has a FinFET transistor that includes a channel...
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