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Patent # | Description |
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2017/0309504 |
SUBSTRATE PROCESSING SYSTEM A substrate processing system is provided. The substrate processing system includes: a first transfer apparatus; at least two first accommodating units... |
2017/0309502 |
PROCESS SYSTEM AND OPERATION METHOD THEREOF A process system includes a substrate, first wafers, second wafers, and a roller. The first wafers are arranged at predetermined intervals along a first column... |
2017/0309501 |
SUBSTRATE TREATMENT APPARATUS AND SUBSTRATE TREATMENT METHOD According to embodiments, a substrate treatment apparatus includes a housing, a heater and a pipe. The housing stores solution containing phosphoric acid and... |
2017/0309500 |
Multi-Zone Gas Distribution Plate (GDP) and a Method for Designing the
Multi-Zone GDP A multi-zone gas distribution plate (GDP) for high uniformity in plasma-based etching is provided. A housing defines a process chamber and comprises a gas... |
2017/0309499 |
POWER-MODULE SUBSTRATE WITH COOLER AND METHOD OF PRODUCING THE SAME Preventing a deformation when a metal layer made of copper or copper alloy is brazed on an aluminum-made cooler, a power-module substrate with cooler having... |
2017/0309498 |
SEMICONDUCTOR MODULE AND CONDUCTIVE MEMBER FOR SEMICONDUCTOR MODULE A semiconductor module is provided with a conductive member having one end, in a longitudinal direction, joined to an electrode of a semiconductor element that... |
2017/0309497 |
METHOD FOR MANUFACTURING A RESISTIVE DEVICE FOR A MEMORY OR LOGIC CIRCUIT A method for manufacturing a resistive device, includes depositing a first electrically conductive layer on a substrate; forming an etching mask on the first... |
2017/0309496 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD A semiconductor device manufacturing method, sequentially includes a semiconductor element preparation step of preparing a first semiconductor element on which... |
2017/0309495 |
Double Patterning Method In some embodiments, the disclosure relates to a method of forming an integrated circuit. The method is performed by forming a first mask layer over a... |
2017/0309494 |
CHEMICAL MECHANICAL POLISHING APPARATUS AND METHODS Embodiments of the invention provide a non-uniform substrate polishing apparatus that includes a polishing pad with two or more zones, each zone adapted to... |
2017/0309493 |
METHOD FOR FORMING ORGANIC FILM AND METHOD FOR MANUFACTURING SUBSTRATE FOR
SEMICONDUCTOR APPARATUS The present invention provides a method for forming an organic film, including: forming a coating film by spin coating of an organic film-forming composition... |
2017/0309492 |
REMOVAL LIQUID AND METHOD FOR REMOVING OXIDE OF GROUP III-V ELEMENT,
TREATMENT LIQUID FOR TREATING COMPOUND OF... Provided are a removal liquid for removing an oxide of a Group III-V element, an oxidation prevention liquid for preventing the oxidation of an oxide of a... |
2017/0309491 |
METHOD OF FORMING TUNGSTEN FILM AND METHOD OF FABRICATING SEMICONDUCTOR
DEVICE USING THE SAME A method of forming a tungsten film including disposing a substrate inside a process chamber; performing a tungsten nucleation layer forming operation for... |
2017/0309490 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE A method of manufacturing a semiconductor device includes: forming an amorphous metal film on a substrate by time-divisionally conducting a cycle a... |
2017/0309489 |
LIGHT IRRADIATION TYPE HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS A metal film is deposited on a front surface of a semiconductor wafer of silicon. After the semiconductor wafer is received in a chamber, the pressure in the... |
2017/0309488 |
METHOD OF MAKING SEMICONDUCTOR FERROELECTRIC MEMORY ELEMENT, AND
SEMICONDUCTOR FERROELECTRIC MEMORY TRANSISTOR [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to... |
2017/0309487 |
STRUCTURES AND METHODS FOR EQUIVALENT OXIDE THICKNESS SCALING ON SILICON
GERMANIUM CHANNEL OR III-V CHANNEL OF... A method of forming a semiconductor device that includes forming a metal oxide material on a III-V semiconductor channel region or a germanium containing... |
2017/0309486 |
MEMORY DEVICE A method of manufacturing a memory device includes: providing a substrate; forming in a cell region a channel extending in a direction perpendicular to an... |
2017/0309485 |
APPARATUS FOR SEMICONDUCTOR WAFER TREATMENT AND SEMICONDUCTOR WAFER
TREATMENT An apparatus for semiconductor wafer treatment includes a wafer holding unit configured to receive a single wafer, at least a solution supply unit configured... |
2017/0309484 |
Carbon Vacancy Defect Reduction Method for SiC A method of defect reduction for a SiC layer includes activating dopants disposed in the SiC layer, depositing a carbon-rich layer on the SiC layer after... |
2017/0309483 |
MANUFACTURING OF SILICON STRAINED IN TENSION ON INSULATOR BY AMORPHISATION
THEN RECRYSTALLISATION Method for making a strained silicon structure, wherein a silicon germanium layer is formed on the silicon layer, followed by another layer with a lower... |
2017/0309482 |
Method For Manufacturing A Semiconductor Device And Semiconductor Device This invention is directed toward a method for manufacturing a semiconductor device with a heterostructure comprises covering a semiconductor structure with a... |
2017/0309481 |
Method for Producing a Plurality of Semiconductor Chips and Semiconductor
Chip A method for producing a plurality of semiconductor chips and a semiconductor chip are disclosed. The method includes applying a mask material on a growth... |
2017/0309480 |
EPITAXIAL FILM FORMING METHOD, SPUTTERING APPARATUS, MANUFACTURING METHOD
OF SEMICONDUCTOR LIGHT-EMITTING... The present invention provides an epitaxial film forming method for epitaxially growing a high-quality group III nitride semiconductor thin film on an... |
2017/0309479 |
SURFACE FUNCTIONALIZATION AND PASSIVATION WITH A CONTROL LAYER Embodiments described herein relate to semiconductor and metal substrate surface preparation and controlled growth methods. An example application is formation... |
2017/0309478 |
ETCHING METHOD An etching method includes: disposing a target substrate which includes silicon and silicon-germanium in a chamber; supplying the chamber with processing gas... |
2017/0309477 |
A METHOD FOR FORMING A GRADIENT THIN FILM BY SPRAY PYROLYSIS The present invention proposes a method to form a gradient thin film using a spray pyrolysis technique. The method comprises providing a base substrate,... |
2017/0309476 |
Doped And Undoped Vanadium Oxides For Low-K Spacer Applications A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the... |
2017/0309475 |
ELECTRODE MANUFACTURING METHOD FOR IMPROVING BATTERY CAPACITY AND
ELECTRODE MANUFACTURED THEREBY The present invention relates to an electrode manufacturing method, an electrode manufactured thereby, and a battery comprising the same, the electrode... |
2017/0309474 |
METAL INTERCONNECT STRUCTURE A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a... |
2017/0309473 |
METHOD AND APPARATUS FOR TREATING SUBSTRATE Disclosed are a method and an apparatus for applying a liquid onto a substrate. The method for treating a substrate, the method includes: a liquid supplying... |
2017/0309472 |
SUBSTRATE CLEANING METHOD AND SUBSTRATE CLEANING APPARATUS An ultrasonic wave applying liquid is supplied to one principal surface of a substrate while a liquid film of a first liquid being formed on another principal... |
2017/0309471 |
DEPOSITION OF BORON AND CARBON CONTAINING MATERIALS Methods of depositing boron and carbon containing films are provided. In some embodiments, methods of depositing B,C films with desirable properties, such as... |
2017/0309470 |
PVDF-TrFE Co-Polymer Having Improved Ferroelectric Properties, Methods of
Making a PVDF-TrFE Co-Polymer Having... A method of exchanging or transforming end groups in and/or improving the ferroelectric properties of a PVDF-TrFE co-polymer is disclosed. A bulky or... |
2017/0309469 |
METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE Methods for manufacturing a semiconductor device include forming a gate line extending in a first direction in a substrate, and an impurity region on a side... |
2017/0309468 |
CLEANING SOLUTION, METHOD OF REMOVING A REMOVAL TARGET AND METHOD OF
ETCHING A SUBSTRATE USING SAID CLEANING... A cleaning liquid which includes 3-alkoxy-3-methyl-1-butanol represented by the following general formula (1); at least one of diethylene glycol monomethyl... |
2017/0309467 |
LAMP WITH HEAT-SHIELDING ELEMENT A lamp has a light emitting element within a sealed transparent vessel. The vessel comprises a cylindrical section with a longitudinal axis L in parallel to a... |
2017/0309466 |
FLASH DISCHARGE TUBE AND LIGHT-EMITTING DEVICE EQUIPPED WITH THE FLASH
DISCHARGE TUBE A flash discharge tube includes tungsten pins configuring a pair of discharge electrodes, and an envelope. The envelope includes a central region, serving as... |
2017/0309465 |
Dual Mode Ionization Device An ion source is disclosed that alternates between ionizing analytes in a sample by electrospray ionization and impact ionization. |
2017/0309464 |
METHODS AND APPARATUSES RELATING TO CLEANING AN ION SOURCE A method of cleaning an ion source. The method includes: at a first reflective surface of a mirror, reflecting light that has a wavelength in a first... |
2017/0309463 |
SYSTEMS AND METHODS FOR TRACE CHEMICAL DETECTION USING DUAL
PHOTOIONIZATION SOURCES A dual source ionizer is provided. The dual source ionizer includes a first photoionization source configured to emit low flux ultraviolet (UV) light to... |
2017/0309462 |
Mass spectrometry analysis of microorganisms in samples The invention generally relates to systems and methods for mass spectrometry analysis of microorganisms in samples. |
2017/0309461 |
ION TRANSFER TUBE WITH SHEATH GAS FLOW An ion transfer tube assembly, a mass spectrometry system, and a method for providing an ion stream to an ion detection device are described that include using... |
2017/0309460 |
NIOBIUM OXIDE SINTERED COMPACT, SPUTTERING TARGET FORMED FROM SAID
SINTERED COMPACT, AND METHOD OF PRODUCING... The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide... |
2017/0309459 |
Method and Device for Particle Measurement Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device... |
2017/0309458 |
PLASMA DEVICE DRIVEN BY MULTIPLE-PHASE ALTERNATING OR PULSED ELECTRICAL
CURRENT A plasma source is provided. The plasma source includes at least three hollow cathodes, including a first hollow cathode, a second hollow cathode, and a third... |
2017/0309457 |
SUBSTRATE PROCESSING APPARATUS A substrate processing apparatus includes a chamber in which a first processing space, a second processing space, a connecting space connecting the first... |
2017/0309456 |
Toroidal Plasma Channel with Varying Cross-Section Areas Along the Channel An assembly for adjusting gas flow patterns and gas-plasma interactions including a toroidal plasma chamber. The toroidal plasma chamber has an injection... |
2017/0309455 |
PLASMA APPARATUS A plasma apparatus configured to form a film on or etch a work piece includes: a vacuum chamber including a first casing that has a first recess and a first... |
2017/0309454 |
Negative Ribbon Ion Beams from Pulsed Plasmas An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna... |