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Patent # Description
2017/0330921 DISPLAY DEVICES AND METHODS OF MANUFACTURING DISPLAY DEVICES
A display device includes a substrate including a display region and a peripheral region, display structures at the display region of the substrate, a...
2017/0330920 DISPLAY DEVICE
A display device includes a plurality of pixel electrodes including a first pixel electrode, a first electrode adjacent to the first pixel electrode and...
2017/0330919 ORGANIC LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE INCLUDING THE SAME
An organic light emitting diode includes a first electrode and a second electrode overlapping each other, an emission layer disposed between the first...
2017/0330918 Hole Transporting Material, Hole Transporting layer, OLED Display Panel Electronic Device Comprising the Same
The present disclosure relates to a hole transporting material having a structure of formula (I). The present disclosure provides a hole transporting material...
2017/0330917 FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
A flexible display device includes a flexible substrate and a conductive pattern. The flexible substrate includes a bending part. The conductive pattern...
2017/0330916 COMPLEMENTARY RESISTIVE SWITCHING MEMORY DEVICE HAVING THREE-DIMENSIONAL CROSSBAR-POINT VERTICAL MULTI-LAYER...
A complementary resistive switching (CRS) memory device having a three-dimensional crossbar-point vertical multi-layer structure is provided. The CRS memory...
2017/0330915 RESISTIVE RANDOM ACCESS MEMORY
A resistive random access memory includes a memory cell disposed at an intersection point between a first conductive line and a second conductive line. The...
2017/0330914 Nanophosphors-Converted Quantum Photonic Imagers and Methods for Making the Same
An emissive Solid State Imager (SSI) comprised of a spatial array of digitally addressable multicolor micro pixels. Each pixel is a micro optical cavity...
2017/0330913 SUBSTRATE WITH CONDUCTIVE FILM
A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film...
2017/0330912 SEMICONDUCTOR DEVICE, SOLID-STATE IMAGE SENSOR AND CAMERA SYSTEM
The present invention relates to a semiconductor device, a solid-state image sensor and a camera system capable of reducing the influence of noise at a...
2017/0330911 IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME
An electronic device may include at least one image sensor that includes a plurality of photo-sensing devices, a photoelectric device on one side of the...
2017/0330909 Physical Layout and Structure of RGBZ Pixel Cell Unit For RGBZ Image Sensor
An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor...
2017/0330908 IMAGE SENSOR
An image sensor includes: a pixel chip provided with a plurality of pixels, a plurality of first transfer lines, and a plurality of capacitors; a circuit chip...
2017/0330907 IMAGE SENSOR
An image sensor may include: a substrate including a photoelectric conversion element; a first interlayer dielectric layer formed over the photoelectric...
2017/0330906 IMAGE SENSORS WITH SYMMETRICAL IMAGING PIXELS
An image sensor may include a symmetrical imaging pixel with a floating diffusion region. The floating diffusion region may be formed in the center of the...
2017/0330905 IMAGE SENSOR
A pixel array may include an array of microlenses, an array of photodetectors, and an array of color filters. The array of microlenses concentrate incoming...
2017/0330904 SOLID-STATE IMAGING DEVICE
In this solid-state imaging device, the sameness of the potential distributions in pixels, in a region from a photodiode of a transfer transistor to a floating...
2017/0330903 MANUFACTURING METHOD OF DISPLAY DEVICE AND MANUFACTURING METHOD OF ELECTRONIC DEVICE
A method for manufacturing a display device is provided. The method includes a step of forming a first layer over a first substrate, a terminal electrode over...
2017/0330902 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
An object is to provide a semiconductor device with high aperture ratio or a manufacturing method thereof. Another object is to provide semiconductor device...
2017/0330901 SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
Decrease of the output voltage of the logic circuit is inhibited by raising the gate voltage using a capacitor. In a first transistor, a drain and a gate are...
2017/0330900 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
A semiconductor device (200A) includes: a thin film transistor (201) including a gate electrode (3), an oxide semiconductor layer (5), a gate insulating layer...
2017/0330899 SEMICONDUCTOR ON INSULATOR (SOI) BLOCK WITH A GUARD RING
A semiconductor device includes a bulk substrate of a first conductivity type, a first semiconductor on insulator (SOI) block in the bulk substrate, a first...
2017/0330898 GaN TRANSISTORS WITH POLYSILICON LAYERS USED FOR CREATING ADDITIONAL COMPONENTS
A GaN transistor with polysilicon layers for creating additional components for an integrated circuit and a method for manufacturing the same. The GaN device...
2017/0330897 SUBSTRATE FOR DISPLAY APPARATUS AND DISPLAY APPARATUS
According to an aspect, a substrate for a display apparatus includes: a first substrate; a translucent coloring layer that overlaps with the first substrate; a...
2017/0330896 INTEGRATED CIRCUITS WITH DEEP AND ULTRA SHALLOW TRENCH ISOLATIONS AND METHODS FOR FABRICATING THE SAME
Integrated circuits and methods of producing the same are provided herein. In accordance with an exemplary embodiment, an integrated circuit includes an SOI...
2017/0330895 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
A non-volatile semiconductor storage device has a plurality of memory strings to each of which a plurality of electrically rewritable memory cells are...
2017/0330894 SEMICONDUCTOR DEVICES
Provided are a semiconductor device, a method of manufacturing the semiconductor device, and an electronic system adopting the same. The semiconductor device...
2017/0330893 SEMICONDUCTOR DEVICE
A semiconductor device includes a first interlayer insulating layer and a second interlayer insulating layer, and a horizontal conductive pattern interposed...
2017/0330892 MANUFACTURING METHOD OF A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
According to one embodiment, a first stacked body in which first insulation layers and second insulation layers are alternately stacked is formed, a first hole...
2017/0330891 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device having a memory cell for a split-gate MONOS memory with a halo region, which prevents miswriting in the memory...
2017/0330890 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
A method for manufacturing a semiconductor device includes forming a first mask layer having a first opening on an underlying layer; forming a first layer in a...
2017/0330889 SEMICONDUCTOR STRUCTURE INCLUDING A PLURALITY OF PAIRS OF NONVOLATILE MEMORY CELLS AND AN EDGE CELL AND METHOD...
A method includes providing a semiconductor structure having a gate structure arrangement provided over a substrate. The gate structure arrangement includes...
2017/0330888 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
An insulating film made of the same material as that of a gate insulating film is formed so as to cover one sidewall of a control gate on a conducting film for...
2017/0330887 SEMICONDUCTOR CHIPS AND METHODS OF MANUFACTURING THE SAME
Semiconductor chips are provided. A semiconductor chip includes a peripheral circuit region on a substrate. The semiconductor chip includes a semiconductor...
2017/0330886 SEMICONDUCTOR DEVICE AND VOLTAGE TRANSFER UNIT
A semiconductor device may include a first active region including a first main region and a first protruding part. The semiconductor device may include a...
2017/0330885 SEMICONDUCTOR DEVICE
A semiconductor device, including: a semiconductor substrate having a first well region; an insulating layer formed on a first portion of the semiconductor...
2017/0330884 STRUCTURE AND METHOD FOR SRAM FINFET DEVICE HAVING AN OXIDE FEATURE
A method includes providing a substrate having an n-type fin-like field-effect transistor (NFET) region and forming a fin structure in the NFET region. The fin...
2017/0330883 STABLE AND RELIABLE FINFET SRAM WITH IMPROVED BETA RATIO
Fabrication method for a semiconductor memory device and structure are provided, which includes: providing at least two mask layers over a pair of fin...
2017/0330882 SEMICONDUCTOR MEMORY DEVICE HAVING COPLANAR DIGIT LINE CONTACTS AND STORAGE NODE CONTACTS IN MEMORY ARRAY AND...
A semiconductor memory device includes a semiconductor substrate having active areas and a trench isolation region between the active areas. The active areas...
2017/0330881 Array Of Cross Point Memory Cells And Methods Of Forming An Array Of Cross Point Memory Cells
A method of forming an array of cross point memory cells comprises using two, and only two, masking steps to collectively pattern within the array spaced lower...
2017/0330880 SEMICONDUCTOR DEVICE, ANTENNA SWITCH CIRCUIT, AND WIRELESS COMMUNICATION APPARATUS
A semiconductor device includes a layered body, a gate electrode, a source electrode, a drain electrode, and a cap layer. The layered body includes a channel...
2017/0330879 FIN-FET DEVICES AND FABRICATION METHODS THEREOF
A method for fabricating a Fin-FET device includes forming a fin structure on a semiconductor substrate having two peripheral regions and a core region,...
2017/0330878 NOVEL METHOD TO FABRICATE VERTICAL NWs
A FinFET-type device is formed having a fin structure with vertically-oriented source/drain regions (with lightly doped extensions) and a channel region...
2017/0330877 SEMICONDUCTOR DEVICE
A semiconductor device includes: an FET structure that is formed next to a looped trench on a semiconductor substrate and that has an n.sup.+ emitter region...
2017/0330876 Vertical system integration
The Vertical System Integration (VSI) invention herein is a method for integration of disparate electronic, optical and MEMS technologies into a single...
2017/0330875 CMOS COMPATIBLE FUSE OR RESISTOR USING SELF-ALIGNED CONTACTS
A semiconductor device includes dummy gate structures formed on a dielectric layer over a substrate and forming a gap therebetween. A trench silicide structure...
2017/0330874 Circuits and Methods for Lowering Leakage in Ultra-Low-Power MOS Integrated Circuits
A block of logic gates has MOS transistors whose body terminals are connected with a body voltage rail and whose source terminals are connected with a logic...
2017/0330873 SEMICONDUCTOR DEVICE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
To provide a semiconductor device including element layers that are stacked. A first wiring layer and a second wiring layer are stacked between a first element...
2017/0330872 Method and Apparatus for Floating or Applying Voltage to a Well of an Integrated Circuit
In one well bias arrangement, no well bias voltage is applied to the n-well, and no well bias voltage is applied to the p-well. Because no external well bias...
2017/0330871 CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
A chip package includes a sensing chip, a computing chip, and a protective layer annularly surrounding the sensing chip and the computing chip. The sensing...
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